专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07670892B2 Nitrogen based implants for defect reduction in strained silicon 有权
标题翻译：用于应变硅缺陷还原的氮基植入物
公开(公告)号：US07670892B2
公开(公告)日：2010-03-02
申请号：US11268040
申请日：2005-11-07
申请人： Srinivasan Chakravarthi , Pr Chidambaram , Rajesh Khamankar , Haowen Bu , Douglas T. Grider
发明人： Srinivasan Chakravarthi , Pr Chidambaram , Rajesh Khamankar , Haowen Bu , Douglas T. Grider
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L29/7833 , H01L21/26506 , H01L29/665 , H01L29/6659 , H01L29/7843
摘要： A transistor is fabricated upon a semiconductor substrate, where the yield strength or elasticity of the substrate is enhanced or otherwise adapted. A strain inducing layer is formed over the transistor to apply a strain thereto to alter transistor operating characteristics, and more particularly to enhance the mobility of carriers within the transistor. Enhancing carrier mobility allows transistor dimensions to be reduced while also allowing the transistor to operate as desired. However, high strain and temperature associated with fabricating the transistor result in deleterious plastic deformation. The yield strength of the silicon substrate is therefore adapted by incorporating nitrogen into the substrate, and more particularly into source/drain extension regions and/or source/drain regions of the transistor. The nitrogen can be readily incorporated during transistor fabrication by adding it as part of source/drain extension region formation and/or source/drain region formation. The enhanced yield strength of the substrate mitigates plastic deformation of the transistor due to the strain inducing layer.
摘要翻译：晶体管制造在半导体衬底上，其中衬底的屈服强度或弹性得到增强或适应。应变感应层形成在晶体管上以向其施加应变以改变晶体管工作特性，更具体地说，增强晶体管内的载流子迁移率。增强载流子迁移率允许晶体管尺寸减小，同时也允许晶体管根据需要进行操作。然而，与制造晶体管相关的高应变和温度导致有害的塑性变形。因此，硅衬底的屈服强度通过将氮掺入到衬底中，更具体地掺入晶体管的源极/漏极延伸区域和/或源极/漏极区域来适应。在晶体管制造期间，可以通过将其作为源极/漏极延伸区域形成和/或源极/漏极区域形成的一部分来添加来将氮容易地并入。由于应变诱导层，衬底的增强的屈服强度减轻了晶体管的塑性变形。

2. 发明申请

US20070105294A1 Nitrogen based implants for defect reduction in strained silicon 有权
标题翻译：用于应变硅缺陷还原的氮基植入物
公开(公告)号：US20070105294A1
公开(公告)日：2007-05-10
申请号：US11268040
申请日：2005-11-07
申请人： Srinivasan Chakravarthi , Pr Chidambaram , Rajesh Khamankar , Haowen Bu , Douglas Grider
发明人： Srinivasan Chakravarthi , Pr Chidambaram , Rajesh Khamankar , Haowen Bu , Douglas Grider
IPC分类号： H01L21/8234
CPC分类号： H01L29/7833 , H01L21/26506 , H01L29/665 , H01L29/6659 , H01L29/7843
摘要： A transistor is fabricated upon a semiconductor substrate, where the yield strength or elasticity of the substrate is enhanced or otherwise adapted. A strain inducing layer is formed over the transistor to apply a strain thereto to alter transistor operating characteristics, and more particularly to enhance the mobility of carriers within the transistor. Enhancing carrier mobility allows transistor dimensions to be reduced while also allowing the transistor to operate as desired. However, high strain and temperature associated with fabricating the transistor result in deleterious plastic deformation. The yield strength of the silicon substrate is therefore adapted by incorporating nitrogen into the substrate, and more particularly into source/drain extension regions and/or source/drain regions of the transistor. The nitrogen can be readily incorporated during transistor fabrication by adding it as part of source/drain extension region formation and/or source/drain region formation. The enhanced yield strength of the substrate mitigates plastic deformation of the transistor due to the strain inducing layer.
摘要翻译：晶体管制造在半导体衬底上，其中衬底的屈服强度或弹性得到增强或适应。应变感应层形成在晶体管上以向其施加应变以改变晶体管工作特性，更具体地说，增强晶体管内的载流子迁移率。增强载流子迁移率允许晶体管尺寸减小，同时也允许晶体管根据需要进行操作。然而，与制造晶体管相关的高应变和温度导致有害的塑性变形。因此，硅衬底的屈服强度通过将氮掺入到衬底中，更具体地掺入晶体管的源极/漏极延伸区域和/或源极/漏极区域来适应。在晶体管制造期间，可以通过将其作为源极/漏极延伸区域形成和/或源极/漏极区域形成的一部分来添加来将氮容易地并入。由于应变诱导层，衬底的增强的屈服强度减轻了晶体管的塑性变形。

3. 发明申请

US20060068541A1 Integration scheme to improve NMOS with poly cap while mitigating PMOS degradation 有权
标题翻译：集成方案，以改善具有多晶硅帽的NMOS，同时减轻PMOS降解
公开(公告)号：US20060068541A1
公开(公告)日：2006-03-30
申请号：US10950138
申请日：2004-09-24
申请人： PR Chidambaram , Srinivasan Chakravarthi , Haowen Bu , Rajesh Khamankar
发明人： PR Chidambaram , Srinivasan Chakravarthi , Haowen Bu , Rajesh Khamankar
IPC分类号： H01L21/8238
CPC分类号： H01L29/7833 , H01L21/823807 , H01L21/823814 , H01L21/823864 , H01L29/6656 , H01L29/6659 , H01L29/7843
摘要： A method (200) fabricating a semiconductor device is disclosed. A poly oxide layer is formed over gate electrodes (210) on a semiconductor body and active regions defined within the semiconductor body in PMOS and NMOS regions. A nitride containing cap oxide layer is formed over the grown poly oxide layer (212). Offset spacers are formed adjacent to sidewalls of the gate electrodes (216). Extension regions are then formed (214) within the PMOS region and the NMOS region. Sidewall spacers are formed (218) adjacent to the sidewalls of the gate. electrodes. An n-type dopant is implanted into the NMOS region to form source/drain regions and a p-type dopant is implanted with an overdose amount into the PMOS region to form the source/drain regions within the PMOS region (220). A poly cap layer is formed over the device (222) and an anneal or other thermal process is performed (224) that causes the p-type dopant to diffuse into the nitride containing cap oxide layer and obtain a selected dopant profile having sufficient lateral abruptness.
摘要翻译：公开了制造半导体器件的方法（200）。在半导体主体上的栅电极（210）上形成多个氧化物层，以及在PMOS和NMOS区域内限定在半导体本体内的有源区。在生长的多晶氧化物层（212）上形成含氮化物的氧化物层。邻近栅电极（216）的侧壁形成偏移间隔物。然后在PMOS区域和NMOS区域内形成延伸区域（214）。侧壁间隔件形成（218）邻近门的侧壁。电极。将n型掺杂剂注入到NMOS区域中以形成源极/漏极区域，并且将过量剂量的p型掺杂剂注入到PMOS区域中以在PMOS区域（220）内形成源极/漏极区域。在器件（222）之上形成多晶硅层，并执行退火或其它热处理（224），使得p型掺杂剂扩散到含氮化物的氧化物层中，并获得具有足够横向突变性的选定掺杂剂分布。

4. 发明申请

US20090224296A1 Methods, Systems and Structures for Forming Semiconductor Structures Incorporating High-Temperature Processing Steps 有权
标题翻译：用于形成结合高温加工步骤的半导体结构的方法，系统和结构
公开(公告)号：US20090224296A1
公开(公告)日：2009-09-10
申请号：US12437004
申请日：2009-05-07
申请人： PR Chidambaram , Haowen Bu , Rajesh Khamankar , Douglas T. Grider
发明人： PR Chidambaram , Haowen Bu , Rajesh Khamankar , Douglas T. Grider
IPC分类号： H01L29/78
CPC分类号： H01L21/324 , H01L21/823807 , H01L21/823864 , H01L29/6656 , H01L29/7833
摘要： A method (100) of forming semiconductor structures (202) including high-temperature processing steps (step 118), incorporates the use of a high-temperature nitride-oxide mask (220) over protected regions (214) of the device (202). The invention has application in many different embodiments, including but not limited to, the formation of recess, strained device regions (224).
摘要翻译：形成包括高温处理步骤（步骤118）的半导体结构（202）的方法（100）包括在装置（202）的受保护区域（214）上使用高温氮氧化物掩模（220）。本发明应用于许多不同的实施例，包括但不限于形成凹陷，应变器件区域（224）。

5. 发明授权

US07217626B2 Transistor fabrication methods using dual sidewall spacers 有权
标题翻译：使用双侧壁间隔件的晶体管制造方法
公开(公告)号：US07217626B2
公开(公告)日：2007-05-15
申请号：US10899360
申请日：2004-07-26
申请人： Haowen Bu , PR Chidambaram , Rajesh Khamankar , Lindsey Hall
发明人： Haowen Bu , PR Chidambaram , Rajesh Khamankar , Lindsey Hall
IPC分类号： H01L21/336
CPC分类号： H01L29/7842 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7843
摘要： Methods (50) are presented for transistor fabrication, in which first and second sidewall spacers (120a, 120b) are formed laterally outward from a gate structure (114), after which a source/drain region (116) is implanted. The method (50) further comprises removing all or a portion of the second sidewall spacer (120b) after implanting the source/drain region (116), where the remaining sidewall spacer (120a) is narrower following the source/drain implant to improve source/drain contact resistance and PMD gap fill, and to facilitate inducing stress in the transistor channel.
摘要翻译：呈现用于晶体管制造的方法（50），其中第一和第二侧壁间隔物（120a，120b）从栅极结构（114）横向向外形成，之后植入源极/漏极区（116）。方法（50）还包括在注入源极/漏极区域（116）之后去除第二侧壁间隔物（120b）的全部或一部分，其中剩余侧壁间隔物（120a）在源极/漏极植入物之后更窄改善源极/漏极接触电阻和PMD间隙填充，并促进晶体管沟道中的应力。

6. 发明授权

US07012028B2 Transistor fabrication methods using reduced width sidewall spacers 有权
标题翻译：使用减小宽度的侧壁间隔物的晶体管制造方法
公开(公告)号：US07012028B2
公开(公告)日：2006-03-14
申请号：US10899359
申请日：2004-07-26
申请人： Haowen Bu , PR Chidambaram , Rajesh Khamankar
发明人： Haowen Bu , PR Chidambaram , Rajesh Khamankar
IPC分类号： H01I21/302 , H01I21/461
CPC分类号： H01L29/7843 , H01L21/823807 , H01L21/823864 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： Transistor fabrication methods (50) are presented in which shrinkable sidewall spacers (120) are formed (66, 68) along sides of a transistor gate (114), and a source/drain implant is performed (74) after forming the sidewall spacer (120). The sidewall spacer width is then reduced by annealing the shrinkable sidewall spacer material (76) following the source/drain implant (74).
摘要翻译：提出了晶体管制造方法（50），其中沿着晶体管栅极（114）的侧面形成可收缩的侧壁间隔物（120），并且在形成侧壁间隔物（74）之后执行源极/漏极注入（74） 120）。然后通过在源极/漏极注入（74）之后退火可收缩侧壁间隔物材料（76）来减小侧壁间隔物宽度。

7. 发明申请

US20060172502A1 Methods, systems and structures for forming semiconductor structures incorporating high-temperature processing steps 有权
标题翻译：用于形成结合高温处理步骤的半导体结构的方法，系统和结构
公开(公告)号：US20060172502A1
公开(公告)日：2006-08-03
申请号：US11046141
申请日：2005-01-28
申请人： PR Chidambaram , Haowen Bu , Rajesh Khamankar , Douglas Grider
发明人： PR Chidambaram , Haowen Bu , Rajesh Khamankar , Douglas Grider
IPC分类号： H01L29/76 , H01L21/336 , H01L29/94
CPC分类号： H01L21/324 , H01L21/823807 , H01L21/823864 , H01L29/6656 , H01L29/7833
摘要： A method (100) of forming semiconductor structures (202) including high-temperature processing steps (step 118), incorporates the use of a high-temperature nitride-oxide mask (220) over protected regions (214) of the device (202). The invention has application in many different embodiments, including but not limited to, the formation of recess, strained device regions (224).
摘要翻译：形成包括高温处理步骤（步骤118）的半导体结构（202）的方法（100）包括在装置（202）的受保护区域（214）上使用高温氮氧化物掩模（220）。本发明应用于许多不同的实施例，包括但不限于形成凹陷，应变器件区域（224）。

8. 发明申请

US20060019456A1 Transistor fabrication methods using dual sidewall spacers 有权
标题翻译：使用双侧壁间隔件的晶体管制造方法
公开(公告)号：US20060019456A1
公开(公告)日：2006-01-26
申请号：US10899360
申请日：2004-07-26
申请人： Haowen Bu , PR Chidambaram , Rajesh Khamankar , Lindsey Hall
发明人： Haowen Bu , PR Chidambaram , Rajesh Khamankar , Lindsey Hall
IPC分类号： H01L21/336
CPC分类号： H01L29/7842 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7843
摘要： Methods (50) are presented for transistor fabrication, in which first and second sidewall spacers (120a, 120b) are formed laterally outward from a gate structure (114), after which a source/drain region (116) is implanted. The method (50) further comprises removing all or a portion of the second sidewall spacer (120b) after implanting the source/drain region (116), where the remaining sidewall spacer (120a) is narrower following the source/drain implant to improve source/drain contact resistance and PMD gap fill, and to facilitate inducing stress in the transistor channel.
摘要翻译：呈现用于晶体管制造的方法（50），其中第一和第二侧壁间隔物（120a，120b）从栅极结构（114）横向向外形成，之后植入源极/漏极区（116）。方法（50）还包括在注入源极/漏极区域（116）之后去除第二侧壁间隔物（120b）的全部或一部分，其中剩余侧壁间隔物（120a）在源极/漏极植入物之后更窄改善源极/漏极接触电阻和PMD间隙填充，并促进晶体管沟道中的应力。

9. 发明申请

US20060019455A1 Transistor fabrication methods using reduced width sidewall spacers 有权
公开(公告)号：US20060019455A1
公开(公告)日：2006-01-26
申请号：US10899359
申请日：2004-07-26
申请人： Haowen Bu , PR Chidambaram , Rajesh Khamankar
发明人： Haowen Bu , PR Chidambaram , Rajesh Khamankar
IPC分类号： H01L21/336
CPC分类号： H01L29/7843 , H01L21/823807 , H01L21/823864 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： Transistor fabrication methods (50) are presented in which shrinkable sidewall spacers (120) are formed (66, 68) along sides of a transistor gate (114), and a source/drain implant is performed (74) after forming the sidewall spacer (120). The sidewall spacer width is then reduced by annealing the shrinkable sidewall spacer material (76) following the source/drain implant (74).

10. 发明授权

US07129127B2 Integration scheme to improve NMOS with poly cap while mitigating PMOS degradation 有权
公开(公告)号：US07129127B2
公开(公告)日：2006-10-31
申请号：US10950138
申请日：2004-09-24
申请人： Periannan Chidambaram , Srinivasan Chakravarthi , Haowen Bu , Rajesh Khamankar
发明人： Periannan Chidambaram , Srinivasan Chakravarthi , Haowen Bu , Rajesh Khamankar
IPC分类号： H01L21/8238
CPC分类号： H01L29/7833 , H01L21/823807 , H01L21/823814 , H01L21/823864 , H01L29/6656 , H01L29/6659 , H01L29/7843
摘要： A method (200) fabricating a semiconductor device is disclosed. A poly oxide layer is formed over gate electrodes (210) on a semiconductor body and active regions defined within the semiconductor body in PMOS and NMOS regions. A nitride containing cap oxide layer is formed over the grown poly oxide layer (212). Offset spacers are formed adjacent to sidewalls of the gate electrodes (216). Extension regions are then formed (214) within the PMOS region and the NMOS region. Sidewall spacers are formed (218) adjacent to the sidewalls of the gate. electrodes. An n-type dopant is implanted into the NMOS region to form source/drain regions and a p-type dopant is implanted with an overdose amount into the PMOS region to form the source/drain regions within the PMOS region (220). A poly cap layer is formed over the device (222) and an anneal or other thermal process is performed (224) that causes the p-type dopant to diffuse into the nitride containing cap oxide layer and obtain a selected dopant profile having sufficient lateral abruptness.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式