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    • 2. 发明申请
    • METHOD FOR MAKING FIELD EMISSION CATHODE DEVICE
    • 制造场发射阴极器件的方法
    • US20110237148A1
    • 2011-09-29
    • US12900602
    • 2010-10-08
    • HAI-YAN HAOPENG LIUJIE TANGYANG WEILIANG LIUKAI-LI JIANGSHOU-SHAN FAN
    • HAI-YAN HAOPENG LIUJIE TANGYANG WEILIANG LIUKAI-LI JIANGSHOU-SHAN FAN
    • H01J9/00
    • H01J9/025H01J1/304
    • A method for making a field emission cathode device is presented. First, an insulative substrate is provided. The insulative substrate includes a first surface and a second surface opposite to the first surface. The insulative substrate defines a number of openings extending through from the first surface to the second surface. Second, at least one electron emitter is provided corresponding to each of the number of openings. The electron emitter includes a fixing portion and an electron emission portion connecting to the fixing portion. The fixing portion is fixed on the first surface, and the electron emission portion extends from the fixing portion into the number of openings. Third, a number of cathode electrodes are formed on the first surface to fix the fixing portion between the insulative substrate and the cathode electrodes.
    • 提出了一种制造场致发射阴极器件的方法。 首先,提供绝缘性基板。 绝缘基板包括与第一表面相对的第一表面和第二表面。 绝缘衬底限定了从第一表面延伸到第二表面的多个开口。 第二,对应于多个开口中的每一个提供至少一个电子发射器。 电子发射器包括固定部分和连接到固定部分的电子发射部分。 固定部分固定在第一表面上,并且电子发射部分从固定部分延伸到多个开口。 第三,在第一表面上形成多个阴极电极,以将固定部分固定在绝缘基片和阴极之间。
    • 4. 发明申请
    • FIELD EMISSION DISPLAY DEVICE
    • 场发射显示装置
    • US20090181594A1
    • 2009-07-16
    • US12351730
    • 2009-01-09
    • PENG LIULIANG LIUKAI-LI JIANGSHOU-SHAN FAN
    • PENG LIULIANG LIUKAI-LI JIANGSHOU-SHAN FAN
    • H01J9/02
    • H01J1/304H01J9/025H01J2201/30469
    • A method for manufacturing a field emission element includes the following steps. The insulating substrate is provided. At least one grid, a first electrode and a second electrode are formed on the insulating substrate. The first and second electrodes are within the grid. The insulating substrate having at least one grid, the first electrode and the second electrode is covered with a carbon nanotube structure. The carbon nanotube structure includes a plurality of carbon nanotubes successively extended from the second electrode to the first electrode. The carbon nanotubes between the first electrode and the second electrode are cut to form a plurality of substantially parallel electron emitters in the at least one grid. One end of each electron emitter is electrically connected to the second electrode and opposite end of each electron emitter faces towards the first electrode.
    • 场致发射元件的制造方法包括以下步骤。 设置绝缘基板。 在绝缘基板上形成至少一个格栅,第一电极和第二电极。 第一和第二电极在电网内。 具有至少一个格栅的绝缘基板,第一电极和第二电极被碳纳米管结构覆盖。 碳纳米管结构包括从第二电极相继延伸到第一电极的多个碳纳米管。 切割第一电极和第二电极之间的碳纳米管,以在至少一个栅格中形成多个基本平行的电子发射体。 每个电子发射器的一端电连接到第二电极,并且每个电子发射体的相对端朝向第一电极。
    • 6. 发明申请
    • THERMIONIC ELECTRON EMISSION DEVICE
    • THERMIONIC电子发射装置
    • US20120062100A1
    • 2012-03-15
    • US13301654
    • 2011-11-21
    • PENG LIULIANG LIUKAI-LI JIANGSHOU-SHAN FAN
    • PENG LIULIANG LIUKAI-LI JIANGSHOU-SHAN FAN
    • H01J9/04B82Y99/00
    • H01J1/14H01J9/04H01J31/127H01J2201/196
    • A thermionic electron emission device includes an insulating substrate and one or more lattices located on the insulating substrate. Each lattice includes a first, second, third and fourth electrode down-leads located on the insulating substrate to define an area. A thermionic electron emission unit is located in the area. The thermionic electron emission unit includes a first electrode, a second electrode, and a thermionic electron emitter. The thermionic electron emitter includes a carbon nanotube film structure. The carbon nanotube film structure includes a carbon nanotube film. The carbon nanotube film includes a number of carbon nanotubes joined end to end along axial directions of the carbon nanotubes by contacting with each other directly.
    • 热电子发射器件包括绝缘衬底和位于绝缘衬底上的一个或多个晶格。 每个晶格包括位于绝缘基板上的第一,第二,第三和第四电极下引线,以限定一个区域。 热电子发射单元位于该区域。 热电子发射单元包括第一电极,第二电极和热离子电子发射体。 热电子发射体包括碳纳米管膜结构。 碳纳米管膜结构包括碳纳米管膜。 碳纳米管膜包括通过直接彼此接触而沿着碳纳米管的轴向方向端对端地连接的多个碳纳米管。
    • 7. 发明申请
    • FIELD EMISSION DISPLAY
    • 场发射显示
    • US20110241537A1
    • 2011-10-06
    • US13159609
    • 2011-06-14
    • PENG LIUSHOU-SHAN FANLIANG LIUKAI-LI JIANG
    • PENG LIUSHOU-SHAN FANLIANG LIUKAI-LI JIANG
    • H01J1/62B82Y30/00B82Y99/00
    • H01J29/02H01J31/127
    • A field emission device includes a transparent plate, an insulating substrate, one or more grids located on the insulating substrate. Each grid includes a first, second, third and fourth electrode down-leads and a pixel unit. The first, second, third and fourth electrode down-leads are located on the periphery of the grid. The first and the second electrode down-leads are parallel to each other. The third and the fourth electrode down-leads are parallel to each other. The pixel unit includes a phosphor layer, a first electrode, a second electrode and at least one electron emitter. The first electrode and the second electrode are separately located. The first electrode is electrically connected to the first electrode down-lead, and the second electrode is electrically connected to the third electrode down-lead. The phosphor layer is directly located on the corresponding first electrode.
    • 场发射器件包括透明板,绝缘衬底,位于绝缘衬底上的一个或多个栅极。 每个栅格包括第一,第二,第三和第四电极下引线和像素单元。 第一,第二,第三和第四电极下引线位于电网的外围。 第一和第二电极下引线彼此平行。 第三和第四电极下引线彼此平行。 像素单元包括荧光体层,第一电极,第二电极和至少一个电子发射体。 第一电极和第二电极分开设置。 第一电极与第一电极下引线电连接,第二电极与第三电极下引线电连接。 磷光体层直接位于相应的第一电极上。
    • 10. 发明申请
    • METHOD FOR MAKING PHASE CHANGE MEMORY
    • 制造相变记忆的方法
    • US20120324724A1
    • 2012-12-27
    • US13332486
    • 2011-12-21
    • PENG LIUQUN-QING LIKAI-LI JIANGSHOU-SHAN FAN
    • PENG LIUQUN-QING LIKAI-LI JIANGSHOU-SHAN FAN
    • H05K3/30
    • H01L45/06H01L45/126H01L45/144
    • A method for making phase change memory is provided. The method includes following steps. A substrate is provided. A plurality of first row electrode leads and the second row electrode leads is located on the substrate. A carbon nanotube layer is applied on the substrate to cover the first row electrode lead and the second row electrode lead. The carbon nanotube layer is patterned to form a plurality of carbon nanotube units located on the second row electrode lead. A phase change layer is applied on the surface of each carbon nanotube unit. A plurality of first electrodes, a plurality of second electrodes, a plurality of first row electrode leads and a plurality of second row electrode leads is located on the substrate.
    • 提供了一种制造相变存储器的方法。 该方法包括以下步骤。 提供基板。 多个第一行电极引线和第二行电极引线位于基板上。 在基板上涂布碳纳米管层以覆盖第一行电极引线和第二行电极引线。 图案化碳纳米管层以形成位于第二行电极引线上的多个碳纳米管单元。 在每个碳纳米管单元的表面上施加相变层。 多个第一电极,多个第二电极,多个第一行电极引线和多个第二行电极引线位于基板上。