专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4930105A Nonvolatile semiconductor memory device with a double gate structure 失效
标题翻译：具有双栅极结构的非易失性半导体存储器件
公开(公告)号：US4930105A
公开(公告)日：1990-05-29
申请号：US178609
申请日：1988-04-07
申请人： Osamu Matsumoto , Tadashi Maruyama , Hiroyoshi Murata , Isao Abe , Tomohisa Shigematsu , Kazuyoshi Shinada , Yasoji Suzuki , Ichiro Kobayashi
发明人： Osamu Matsumoto , Tadashi Maruyama , Hiroyoshi Murata , Isao Abe , Tomohisa Shigematsu , Kazuyoshi Shinada , Yasoji Suzuki , Ichiro Kobayashi
IPC分类号： G11C17/00 , G11C16/04 , H01L21/8247 , H01L29/788 , H01L29/792
CPC分类号： G11C16/0416 , G11C16/0425
摘要： A memory cell of a nonvolatile semiconductor memory device includes a P conductive type semiconductor substrate, first and second diffusion layers of an N conductivity type, formed in the substrate, a channel region formed in the surface region of the substrate, and which is located between the first and second diffusion layers, a floating gate electrode formed on the channel region, and a control gate electrode formed on the floating gate electrode. The memory cell further includes a third diffusion layer of the N conductivity type, and formed between the first layer and the channel region, the third layer having an impurity concentration lower than that of the first layer.

2. 发明授权

US5219775A Manufacturing method for a floating gate semiconductor memory device by forming cell slits 失效
标题翻译：浮动栅极半导体存储器件的制造方法通过形成细胞片
公开(公告)号：US5219775A
公开(公告)日：1993-06-15
申请号：US836592
申请日：1992-02-18
申请人： Yukihiro Saeki , Osamu Matsumoto , Masayuki Yoshida , Takahide Mizutani , Nobuyoshi Chida , Tomohisa Shigematsu , Teruo Uemura , Kenji Toyoda , Hiroyuki Takamura
发明人： Yukihiro Saeki , Osamu Matsumoto , Masayuki Yoshida , Takahide Mizutani , Nobuyoshi Chida , Tomohisa Shigematsu , Teruo Uemura , Kenji Toyoda , Hiroyuki Takamura
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , Y10S148/106
摘要： A manufacturing method of a semiconductor memory device includes the steps of selectively forming a field oxide film and a gate oxide film on a semiconductor substrate, depositing a first conductive layer on an entire surface of the resultant structure, selectively etching the first conductive layer located in a region other than an element region, depositing a second conductive layer on an entire surface of the resultant structure, and etching the first conductive layer and the second conductive layer using the same mask to form a plurality of floating gates by the first conductive layer and to form a plurality of control gates by the second conductive layer, wherein the step of selectively etching the first conductive layer includes the first etching step of forming cell slits for separating the plurality of floating gates from each other and the second etching step of forming removed regions each of which includes only one end of each of the plurality of control gates.

3. 发明授权

US4859882A Sense amplifier 失效
标题翻译：感应放大器
公开(公告)号：US4859882A
公开(公告)日：1989-08-22
申请号：US280854
申请日：1988-12-07
申请人： Osamu Matsumoto , Isao Abe , Takeshi Nakashiro
发明人： Osamu Matsumoto , Isao Abe , Takeshi Nakashiro
IPC分类号： G11C17/00 , G11C7/06 , G11C16/06 , G11C16/26 , H03K5/02
CPC分类号： G11C16/26 , G11C7/067
摘要： A sense amplifier of the invention includes a PMOS transistor, the source and the drain of which are respectively connected to a power source and an EP-ROM as a signal source to be detected, and the gate and the drain of which are controlled to be at the same potential, a PMOS transistor connected to the power source and the EP-ROM in parallel with the PMOS transistor, and a ratio circuit in which the gate of one PMOS transistor and an NMOS transistor constituting a CMOS transistor is connected to the signal source. This arrangement of the invention enables a high speed operation.

4. 发明授权

US5031149A Non-volatile semiconductor memory device having, at the prestage of an address decoder, a level shifter for generating a program voltage 失效
标题翻译：在地址解码器的预置位处具有用于产生编程电压的电平转换器的非易失性半导体存储器件
公开(公告)号：US5031149A
公开(公告)日：1991-07-09
申请号：US425947
申请日：1989-10-24
申请人： Osamu Matsumoto , Yuji Nakano , Isao Abe , Mika Saeki
发明人： Osamu Matsumoto , Yuji Nakano , Isao Abe , Mika Saeki
IPC分类号： G11C17/00 , G11C5/02 , G11C11/407 , G11C16/06 , G11C16/08 , G11C16/10 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： G11C5/025 , G11C16/08 , G11C16/10
摘要： A non-volatile semiconductor device includes word lines, and a non-volatile memory cell array having a plurality of non-volatile memory cells respectively connected to the word lines. The non-volatile semiconductor memory device further includes a level shifter for receiving, in a programmming mode, an address signal supplied from outside, and shifting the potential level of the address signal to a higher programming potential level, and a row decoder, provided between the word lines and the level shifter, for receiving and decoding the address signal which has been shifted by the level shifter, and selecting one of the word lines in accordance with the result of the decoding of the address signal, and setting the potential of the selected word line to the programming potential level.

5. 发明授权

US09457413B2 Cutting insert and rotary cutting tool 有权
标题翻译：切削刀片和旋转切削刀具
公开(公告)号：US09457413B2
公开(公告)日：2016-10-04
申请号：US13739766
申请日：2013-01-11
申请人： Osamu Matsumoto , Souzou Kawasaki
发明人： Osamu Matsumoto , Souzou Kawasaki
IPC分类号： B23C5/08 , B23C5/20
CPC分类号： B23C5/207 , B23C5/08 , B23C5/205 , B23C2200/0466 , B23C2200/085 , B23C2200/367 , B23C2210/168 , B23C2210/66 , B23C2220/36 , Y10T407/1906 , Y10T407/1942 , Y10T407/235
摘要： A cutting insert includes an insert body portion and a plurality of projecting portions provided integrally with the insert body portion. The projecting portion includes a cutting edge and includes projecting portion upper and lower surfaces, two projecting portion side surfaces, and a projecting portion side end surface extending therebetween. In the projecting portion, a round corner surface extends between the projecting portion upper surface and the projecting portion side end surface. The cutting edge is formed so as to include a corner formed along an edge of the round corner surface and such that the projecting portion side surface serves as a rake face. The projecting portion is designed such that a length between the two projecting portion side surfaces is smaller than a diameter of an inscribed circle defined on the insert body portion.
摘要翻译：切削刀片包括插入件主体部分和与插入件主体部分整体设置的多个突出部分。突出部分包括切割边缘，并且包括突出部分上表面和下表面，两个突出部分侧表面和在它们之间延伸的突出部分侧端面。在突出部中，圆角部在突出部上表面与突出部侧端面之间延伸。切削刃形成为包括沿着圆角的边缘形成的角部，并且突出部侧面用作前刀面。突出部被设计成使得两个突出部侧表面之间的长度小于限定在插入物主体部分上的内接圆的直径。

6. 发明申请

US20080024340A1 Current driven D/A converter and its bias circuit 审中-公开
标题翻译：电流驱动D / A转换器及其偏置电路
公开(公告)号：US20080024340A1
公开(公告)日：2008-01-31
申请号：US11902773
申请日：2007-09-25
申请人： Osamu Matsumoto , Takahiro Miki , Yasuo Morimoto
发明人： Osamu Matsumoto , Takahiro Miki , Yasuo Morimoto
IPC分类号： H03M1/66
CPC分类号： H03M1/0604 , H03M1/742
摘要： A current driven D/A converter sets an OFF control voltage (BIAS3) for turning off NMOS transistors M12P, M12N, M22P, M22N, M32P and M32N at a voltage close to an ON control voltage (BIAS2). This makes it possible to reduce the swing of the control voltage (ON control voltage−OFF control voltage) of the NMOS transistors, and hence to reduce the noise due to charge injections through parasitic capacitances, and noise of a ground voltage or power supply voltage due to flowing of discharge currents from the parasitic capacitances to the ground or power supply at turn off of the transistors, thereby being able to offer a high performance current driven D/A converter.
摘要翻译：电流驱动D / A转换器设置用于关闭NMOS晶体管M 12 P，M 12 N，M 22 P，M 22 N，M 32 P和M 32 N的截止控制电压（BIAS 3） ON控制电压（BIAS 2）。这使得可以减小NMOS晶体管的控制电压（ON控制电压 - 关闭控制电压）的摆动，从而减少由于通过寄生电容的电荷注入引起的噪声，以及接地电压或电源电压的噪声由于在晶体管截止时由寄生电容放电到地或电源的放电电流的流动，从而能够提供高性能的电流驱动D / A转换器。

7. 发明申请

US20070007928A1 Frequency converter, motor, motor drive system and maintenance method for motor drive system 有权
标题翻译：变频器，电机，电机驱动系统及电机驱动系统的维护方法
公开(公告)号：US20070007928A1
公开(公告)日：2007-01-11
申请号：US11521486
申请日：2006-09-15
申请人： Tadahiro Shimozono , Takeshi Obata , Koichiro Saito , Osamu Matsumoto , Kouji Obata
发明人： Tadahiro Shimozono , Takeshi Obata , Koichiro Saito , Osamu Matsumoto , Kouji Obata
IPC分类号： H02P27/04
CPC分类号： H02P1/022 , H02K11/00 , H02K11/0094 , H02M1/126 , H02M7/003 , H02M7/48 , H02M7/5387 , H02P29/02
摘要： A frequency converter for outputting a power to drive a motor, having: an inverter unit for inverting a d.c. power to an a.c. power; a control unit for controlling the inverter unit; and a housing for supporting at least the inverter unit and control unit, wherein a rise time change unit is provided in the housing, the rise time change unit changes a rise time of a waveform of a voltage output from the inverter unit.
摘要翻译：一种用于输出用于驱动电动机的电力的变频器，具有：用于反转直流电的逆变器单元。权力到a.c. 功率; 用于控制逆变器单元的控制单元; 以及用于至少支持所述逆变器单元和控制单元的壳体，其中在所述壳体中设置上升时间改变单元，所述上升时间改变单元改变从所述逆变器单元输出的电压的波形的上升时间。

8. 发明授权

US07112940B2 Frequency converter, motor, motor drive system and maintenance method for motor drive system 有权
公开(公告)号：US07112940B2
公开(公告)日：2006-09-26
申请号：US11171354
申请日：2005-07-01
申请人： Tadahiro Shimozono , Takeshi Obata , Koichiro Saito , Osamu Matsumoto , Kouji Obata
发明人： Tadahiro Shimozono , Takeshi Obata , Koichiro Saito , Osamu Matsumoto , Kouji Obata
IPC分类号： H02P27/04
CPC分类号： H02P1/022 , H02K11/00 , H02K11/0094 , H02M1/126 , H02M7/003 , H02M7/48 , H02M7/5387 , H02P29/02
摘要： A frequency converter for outputting a power to drive a motor, having: an inverter unit for inverting a d.c. power to an a.c. power; a control unit for controlling the inverter unit; and a housing for supporting at least the inverter unit and control unit, wherein a rise time change unit is provided in the housing, the rise time change unit changes a rise time of a waveform of a voltage output from the inverter unit.

9. 发明授权

US06453876B1 Fuel injection system 有权
标题翻译：燃油喷射系统
公开(公告)号：US06453876B1
公开(公告)日：2002-09-24
申请号：US09685136
申请日：2000-10-11
申请人： Norihisa Fukutomi , Osamu Matsumoto , Masayuki Aota
发明人： Norihisa Fukutomi , Osamu Matsumoto , Masayuki Aota
IPC分类号： F02M5100
CPC分类号： F02D41/20 , F02D2041/2037
摘要： The fuel injection system includes an injector 7 to be electromagnetically driven, a control device 2 for outputting a drive signal having first current-carrying time T1 and second current-carrying time T2 to this injector 7, and a drive device 6 for passing a large current to open a valve of the injector 7 during the first current-carrying time T1 and passing a small current to hold the injector 7 in a valve opening state during the second current-carrying time T2. The system is constructed so that the first current-carrying time T1 is set to the time shorter than valve opening required time T0 from a current-carrying start of the injector 7 to full opening and this time difference is set to the value shorter than valve closing operation delay time from a current break of the injector 7 in the case of breaking a current in the first current-carrying time T1 to a start of a valve closing operation.
摘要翻译：燃料喷射系统包括要被电磁驱动的喷射器7，用于向该喷射器7输出具有第一载流时间T1和第二载流时间T2的驱动信号的控制装置2和用于使大型电流在第一载流时间T1期间打开喷射器7的阀，并且在第二载流时间T2期间通过小电流以将喷射器7保持在阀打开状态。该系统构造成使得第一通电时间T1被设定为比从喷射器7的通电开始到全开的阀开启所需时间T0更短的时间，并且该时间差设定为比阀短在将第一通电时间T1中的电流断开至闭阀动作开始的情况下，从喷射器7的当前中断开始关闭运转延迟时间。

10. 发明授权

US5821893A Pipeline type A/D converter 失效
标题翻译：管道式A / D转换器
公开(公告)号：US5821893A
公开(公告)日：1998-10-13
申请号：US740520
申请日：1996-10-30
申请人： Toshio Kumamoto , Osamu Matsumoto
发明人： Toshio Kumamoto , Osamu Matsumoto
IPC分类号： H03M1/14 , H03M1/06 , H03M1/16 , H03M1/38
CPC分类号： H03M1/0695 , H03M1/167
摘要： In a pipeline type A/D converter, a switch for sampling an analog potential signal has its other terminal in connection with an A/D converter, a D/A converter, a capacitor for subtraction. Even when frequency of the analog potential signal is raised such that input current is increased and a voltage drop is increased at the switch, there will be no error in the result of subtraction like in the conventional example where analog potential signal was directly input to A/D converter. Accordingly, a pipeline type A/D converter with low power dissipation and satisfactory frequency characteristics is obtained.
摘要翻译：在流水线型A / D转换器中，用于对模拟电位信号采样的开关具有与A / D转换器，D / A转换器，用于减法的电容器相连的另一端。即使在模拟电位信号的频率升高使得输入电流增加并且在开关处电压降增加的情况下，与在将模拟电位信号直接输入到A的常规示例中一样，减法结果将不会有误差 / D转换器。因此，获得具有低功耗和令人满意的频率特性的流水线型A / D转换器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式