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    • 5. 发明申请
    • Production of Conductive Nanodiamond by Dynamic Synthesis Approaches
    • 通过动态合成方法生产导电纳米金刚石
    • US20100254884A1
    • 2010-10-07
    • US12820230
    • 2010-06-22
    • Olga Shenderova
    • Olga Shenderova
    • B01J3/08B01J3/06B22F3/08
    • B82Y40/00B82Y5/00B82Y15/00B82Y30/00C01B32/25Y10S977/70Y10S977/734Y10S977/773Y10S977/775
    • In certain implementations, a method of manufacturing electrically conductive nanodiamond particles involves providing at least one type of carbon-containing explosive material and at least one type of non-explosive material; wherein the non-explosive material contains at least one or more than one element or species other than nitrogen that serve as a nanodiamond dopant; mixing the carbon containing explosive material with the non-explosive material; detonating the mixture under conditions of negative oxygen balance in the presence of a cooling medium; purifying the product of detonation from incombustible impurities; and carrying out additional processing for activation or enhancement of electrical conductance. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
    • 在某些实施方案中,制造导电纳米金刚石颗粒的方法包括提供至少一种类型的含碳爆炸材料和至少一种类型的非爆炸材料; 其中所述非爆炸材料包含用作纳米金刚石掺杂剂的除了氮之外的至少一种或多种元素或物质; 将含碳的炸药与非爆炸性材料混合; 在存在冷却介质的情况下,在负氧平衡的条件下引爆混合物; 净化爆炸产物不可燃杂质; 并执行用于激活或增强电导的附加处理。 该摘要不被认为是限制性的,因为其他实施例可能偏离本摘要中描述的特征。
    • 6. 发明申请
    • Back-gated field emission electron source
    • 后门控场发射电子源
    • US20080067494A1
    • 2008-03-20
    • US11904938
    • 2007-09-28
    • Victor MammanaGary McGuireOlga Shenderova
    • Victor MammanaGary McGuireOlga Shenderova
    • H01L29/06
    • B82Y10/00H01J3/022H01J9/025Y10S977/939
    • A field emitter device consistent with certain embodiments has a substantially planar conductor forming a gate electrode. A conductive stripe forms a cathode on the insulating layer. An insulating layer covers at least a portion of the surface between the cathode and the gate. An anode is positioned above the cathode. An emitter structure, for example of carbon nanotubes is disposed on a surface of the cathodes closest to the anode. When an electric field is generated across the insulating layer, the cathode/emitter structure has a combination of work function and aspect ratio that causes electron emission from the emitter structure toward the anode at a field strength that is lower than that which causes emissions from other regions of the cathode. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
    • 与某些实施例一致的场发射器件具有形成栅电极的基本上平面的导体。 导电条在绝缘层上形成阴极。 绝缘层覆盖阴极和栅极之间的表面的至少一部分。 阳极位于阴极上方。 例如碳纳米管的发射极结构设置在最靠近阳极的阴极的表面上。 当跨绝缘层产生电场时,阴极/发射极结构具有功函数和纵横比的组合,其导致电子从发射极结构向阳极发射的场强低于引起来自其它辐射的场强 阴极的区域。 该摘要不被认为是限制性的,因为其他实施例可能偏离本摘要中描述的特征。
    • 9. 发明申请
    • Back-gated field emission electron source
    • 后门控场发射电子源
    • US20050116214A1
    • 2005-06-02
    • US10974895
    • 2004-10-27
    • Victor MammanaGary McGuireOlga Shenderova
    • Victor MammanaGary McGuireOlga Shenderova
    • H01J3/02H01J9/02H01L29/06
    • B82Y10/00H01J3/022H01J9/025Y10S977/939
    • A field emitter device consistent with certain embodiments has a substantially planar conductor forming a gate electrode. A conductive stripe forms a cathode on the insulating layer. An insulating layer covers at least a portion of the surface between the cathode and the gate. An anode is positioned above the cathode. An emitter structure, for example of carbon nanotubes is disposed on a surface of the cathodes closest to the anode. When an electric field is generated across the insulating layer, the cathode/emitter structure has a combination of work function and aspect ratio that causes electron emission from the emitter structure toward the anode at a field strength that is lower than that which causes emissions from other regions of the cathode. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
    • 与某些实施例一致的场发射器件具有形成栅电极的基本上平面的导体。 导电条在绝缘层上形成阴极。 绝缘层覆盖阴极和栅极之间的表面的至少一部分。 阳极位于阴极上方。 例如碳纳米管的发射极结构设置在最靠近阳极的阴极的表面上。 当跨绝缘层产生电场时,阴极/发射极结构具有功函数和纵横比的组合,其导致电子从发射极结构向阳极发射的场强低于引起来自其它辐射的场强 阴极的区域。 该摘要不被认为是限制性的,因为其他实施例可能偏离本摘要中描述的特征。
    • 10. 发明申请
    • Imaging devices and methods
    • 成像设备和方法
    • US20050046944A1
    • 2005-03-03
    • US10911926
    • 2004-08-05
    • Olga ShenderovaGary McGuireAlexander Shenderov
    • Olga ShenderovaGary McGuireAlexander Shenderov
    • G02B27/44G06K9/40
    • G02B5/1842G02B5/188G02B27/4205
    • An imaging device consistent with one of numerous embodiments has an opaque planar sheet with a plurality of pinholes defining a photon sieve in the sheet, wherein, the photon sieve comprises at least first and second regions. The first region exhibits a first focal length, a first field of view, a first transmissivity, a first resolution and a first wavelength, and the second region exhibiting a second focal length, a second field of view, a second transmissivity, a second resolution and a second wavelength. At least one of the first focal length, the first wavelength, the first transmissivity, the first resolution and the first field of view is different from the second focal length, the second wavelength, the second transmissivity, the second resolution and the second field of view. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
    • 与许多实施例之一相一致的成像装置具有不透明平板,其具有在片材中限定光子筛的多个针孔,其中,光子筛包括至少第一和第二区域。 第一区域呈现第一焦距,第一视场,第一透射率,第一分辨率和第一波长,第二区域呈现第二焦距,第二视场,第二透射率,第二分辨率 和第二波长。 第一焦距,第一波长,第一透射率,第一分辨率和第一视场中的至少一个不同于第二焦距,第二波长,第二透射率,第二分辨率和第二场 视图。 该摘要不被认为是限制性的,因为其他实施例可能偏离本摘要中描述的特征。