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    • 4. 发明授权
    • Method for inhibiting thermal run-away
    • 抑制热失控的方法
    • US08710821B2
    • 2014-04-29
    • US12837382
    • 2010-07-15
    • Ole P. MoyerPaul Jay HarrimanBenjamin M. RiceChristopher J. GassMichael A. Stapleton
    • Ole P. MoyerPaul Jay HarrimanBenjamin M. RiceChristopher J. GassMichael A. Stapleton
    • H02M3/156
    • H02M3/1584H02M1/32
    • A method for mitigating aliasing effects in a single phase power converter and mitigating aliasing effects and inhibiting thermal run-away in a multi-phase power converter at varying load transition rates. A single phase or multi-phase power converter having an on-time is provided and the frequency of the power converter is adjusted so that a load step period and the on time of the single phase power converter are in a temporal relationship. Alternatively, a load step rate is inhibited from locking onto a phase current of the single phase power converter by suspending an oscillator signal. In accordance with another alternative, a load step rate is inhibited from locking onto a phase current of the single phase power converter by suspending an oscillator signal and dithering an input signal to the oscillator.
    • 一种用于减轻单相功率转换器中的混叠效应的方法,并减轻混叠效应,并以不同的负载转换速率抑制多相功率转换器中的热耗散。 提供具有导通时间的单相或多相功率转换器,并且调整功率转换器的频率,使得单相功率转换器的负载阶跃周期和导通时间处于时间关系。 或者,通过暂停振荡器信号来禁止负载步进速率锁定到单相功率转换器的相电流。 根据另一替代方案,通过暂停振荡器信号并将输入信号抖动到振荡器,禁止负载步进速率锁定到单相功率转换器的相电流。
    • 6. 发明授权
    • Trench growth techniques using selective epitaxy
    • 使用选择性外延的沟槽生长技术
    • US06730606B1
    • 2004-05-04
    • US09705274
    • 2000-11-03
    • Misbahul AzamJeffrey PearseChristopher J. Gass
    • Misbahul AzamJeffrey PearseChristopher J. Gass
    • H01L21311
    • H01L29/66348H01L29/0619H01L29/0847
    • A masking material (14) is formed on a foundation layer (12) and a substrate (10). A mask (16) is disposed onto the masking material (14) where a trench (26) is desired to be formed. An etch step removes all of the masking material (14) except at regions where the mask (16) was formed leaving a protruding portion (18) with an opening (20) on either side. An epi layer (24), is grown on the foundation layer (12) adjacent to the protruding portion (18) in the opening (20). A wet oxide etch process is used to remove the protruding portion (18) leaving a trench (26) formed in the epi layer (24). To complete the process, a silicon wet etch process is used to round off the corners at an edge (28) of the trench (26).
    • 掩模材料(14)形成在基础层(12)和基底(10)上。 掩模(16)设置在需要形成沟槽(26)的掩模材料(14)上。 蚀刻步骤除去除了形成掩模(16)的区域之外的所有掩模材料(14),留下在任一侧上具有开口(20)的突出部分(18)。 在开口(20)中与突出部分(18)相邻的基础层(12)上生长外延层(24)。 使用湿氧化物蚀刻工艺来去除在外延层(24)中形成的沟槽(26)的突出部分(18)。 为了完成该工艺,使用硅湿法蚀刻工艺来在沟槽(26)的边缘(28)处圆角掉落。