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1. 发明授权

US08369141B2 Adaptive estimation of memory cell read thresholds 有权
公开(公告)号：US08369141B2
公开(公告)日：2013-02-05
申请号：US12522175
申请日：2008-03-11
申请人： Naftali Sommer , Ofir Shalvi , Uri Perlmutter , Oren Golov , Eyal Gurgi , Micha Anholt , Dotan Sokolov
发明人： Naftali Sommer , Ofir Shalvi , Uri Perlmutter , Oren Golov , Eyal Gurgi , Micha Anholt , Dotan Sokolov
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C16/04 , G11C8/20 , G11C11/5642 , G11C16/20 , G11C16/28 , G11C2211/5634
摘要： A method for operating a memory (28) that includes a plurality of analog memory cells (32) includes storing data in the memory by writing first storage values to the cells. Second storage values are read from the cells, and a Cumulative Distribution Function (CDF) of the second storage values is estimated. The estimated CDF is processed so as to compute one or more thresholds. A memory access operation is performed on the cells using the one or more thresholds.

2. 发明申请

US20080282106A1 DATA STORAGE WITH INCREMENTAL REDUNDANCY 有权
标题翻译：数据存储与增量冗余
公开(公告)号：US20080282106A1
公开(公告)日：2008-11-13
申请号：US12119069
申请日：2008-05-12
申请人： Ofir Shalvi , Dotan Sokolov , Eyal Gurgi , Oren Golov , Naftali Sommer
发明人： Ofir Shalvi , Dotan Sokolov , Eyal Gurgi , Oren Golov , Naftali Sommer
IPC分类号： G06F11/16
CPC分类号： G06F11/1068 , G11C2029/0411
摘要： A method for operating a memory includes encoding input data with an Error Correction Code (ECC) to produce input encoded data including first and second sections, such that the ECC is decodable based on the first section at a first redundancy, and based on both the first and the second sections at a second redundancy that is higher than the first redundancy.Output encoded data is read and a condition is evaluated. The input data is reconstructed using a decoding level selected, responsively to the condition, from a first level, at which a first part of the output encoded data corresponding to the first section is processed to decode the ECC at the first redundancy, and a second level, at which the first part and a second part of the output encoded data corresponding to the second section are processed jointly to decode the ECC at the second redundancy.
摘要翻译：一种用于操作存储器的方法包括用错误校正码（ECC）编码输入数据以产生包括第一和第二部分的输入编码数据，使得基于第一冗余部分的第一部分可以解码ECC，并且基于两者第一和第二部分具有高于第一冗余的第二冗余。读取输出编码数据并评估条件。输入数据使用从第一级别选择的解码级别来重构，在第一级别处理对应于第一部分的输出编码数据的第一部分被处理以在第一冗余处解码ECC，以及第二级级别，其中对应于第二部分的输出编码数据的第一部分和第二部分共同处理，以在第二冗余处对ECC进行解码。

3. 发明授权

US08234545B2 Data storage with incremental redundancy 有权
标题翻译：具有增量冗余的数据存储
公开(公告)号：US08234545B2
公开(公告)日：2012-07-31
申请号：US12119069
申请日：2008-05-12
申请人： Ofir Shalvi , Dotan Sokolov , Eyal Gurgi , Oren Golov , Naftali Sommer
发明人： Ofir Shalvi , Dotan Sokolov , Eyal Gurgi , Oren Golov , Naftali Sommer
IPC分类号： G06F11/00
CPC分类号： G06F11/1068 , G11C2029/0411
摘要： A method for operating a memory includes encoding input data with an Error Correction Code (ECC) to produce input encoded data including first and second sections, such that the ECC is decodable based on the first section at a first redundancy, and based on both the first and the second sections at a second redundancy that is higher than the first redundancy.Output encoded data is read and a condition is evaluated. The input data is reconstructed using a decoding level selected, responsively to the condition, from a first level, at which a first part of the output encoded data corresponding to the first section is processed to decode the ECC at the first redundancy, and a second level, at which the first part and a second part of the output encoded data corresponding to the second section are processed jointly to decode the ECC at the second redundancy.
摘要翻译：一种用于操作存储器的方法包括用错误校正码（ECC）对输入数据进行编码以产生包括第一和第二部分的输入编码数据，使得基于第一冗余部分的第一部分可以解码ECC，并且基于两者第一和第二部分具有高于第一冗余的第二冗余。读取输出编码数据并评估条件。输入数据使用从第一级别选择的解码级别来重构，在第一级别处理对应于第一部分的输出编码数据的第一部分被处理以在第一冗余处解码ECC，以及第二级级别，其中对应于第二部分的输出编码数据的第一部分和第二部分共同处理，以在第二冗余处对ECC进行解码。

4. 发明授权

US08060806B2 Estimation of non-linear distortion in memory devices 有权
标题翻译：存储器件非线性失真的估计
公开(公告)号：US08060806B2
公开(公告)日：2011-11-15
申请号：US11995813
申请日：2007-08-27
申请人： Ofir Shalvi , Naftali Sommer , Eyal Gurgi , Oren Golov , Dotan Sokolov
发明人： Ofir Shalvi , Naftali Sommer , Eyal Gurgi , Oren Golov , Dotan Sokolov
IPC分类号： G11C29/00
CPC分类号： G11C11/5621 , G11C16/3418 , G11C27/005
摘要： A method for operating a memory (24) includes storing data in analog memory cells (32) of the memory by writing respective analog values to the analog memory cells. A set of the analog memory cells is identified, including an interfered cell having a distortion that is statistically correlated with the respective analog values of the analog memory cells in the set. A mapping is determined between combinations of possible analog values of the analog memory cells in the set and statistical characteristics of composite distortion levels present in the interfered memory cell. The mapping is applied so as to compensate for the distortion in the interfered memory cell.
摘要翻译：一种用于操作存储器（24）的方法包括通过将相应的模拟值写入模拟存储器单元来将数据存储在存储器的模拟存储器单元（32）中。识别一组模拟存储器单元，包括具有与组中的模拟存储器单元的相应模拟值统计相关的失真的干扰单元。在存在于受干扰存储器单元中的复合失真级的集合和统计特性中的模拟存储器单元的可能模拟值的组合之间确定映射。应用映射以补偿受干扰的存储单元中的失真。

5. 发明申请

US20100091535A1 ADAPTIVE ESTIMATION OF MEMORY CELL READ THRESHOLDS 有权
标题翻译：记忆体读取阈值的自适应估计
公开(公告)号：US20100091535A1
公开(公告)日：2010-04-15
申请号：US12522175
申请日：2008-03-11
申请人： Naftali Sommer , Ofir Shalvi , Uri Perlmutter , Oren Golov , Eyal Gurgi , Micha Anholt , Dotan Sokolov
发明人： Naftali Sommer , Ofir Shalvi , Uri Perlmutter , Oren Golov , Eyal Gurgi , Micha Anholt , Dotan Sokolov
IPC分类号： G11C27/00 , G11C7/00
CPC分类号： G11C16/04 , G11C8/20 , G11C11/5642 , G11C16/20 , G11C16/28 , G11C2211/5634
摘要： A method for operating a memory (28) that includes a plurality of analog memory cells (32) includes storing data in the memory by writing first storage values to the cells. Second storage values are read from the cells, and a Cumulative Distribution Function (CDF) of the second storage values is estimated. The estimated CDF is processed so as to compute one or more thresholds. A memory access operation is performed on the cells using the one or more thresholds.
摘要翻译：一种用于操作包括多个模拟存储单元（32）的存储器（28）的方法包括：通过向单元写入第一存储值来将数据存储在存储器中。从单元读取第二存储值，并且估计第二存储值的累积分布函数（CDF）。处理估计的CDF以计算一个或多个阈值。使用一个或多个阈值对单元执行存储器存取操作。

6. 发明申请

US20100131826A1 ESTIMATION OF NON-LINEAR DISTORTION IN MEMORY DEVICES 有权
标题翻译：记忆装置中非线性失真的估计
公开(公告)号：US20100131826A1
公开(公告)日：2010-05-27
申请号：US11995813
申请日：2007-08-27
申请人： Ofir Shalvi , Naftali Sommer , Eyal Gurgi , Oren Golov , Dotan Sokolov
发明人： Ofir Shalvi , Naftali Sommer , Eyal Gurgi , Oren Golov , Dotan Sokolov
IPC分类号： H03M13/05 , G06F12/06 , G06F12/00 , G06F11/10 , G06F11/07
CPC分类号： G11C11/5621 , G11C16/3418 , G11C27/005
摘要： A method for operating a memory (24) includes storing data in analog memory cells (32) of the memory by writing respective analog values to the analog memory cells. A set of the analog memory cells is identified, including an interfered cell having a distortion that is statistically correlated with the respective analog values of the analog memory cells in the set. A mapping is determined between combinations of possible analog values of the analog memory cells in the set and statistical characteristics of composite distortion levels present in the interfered memory cell. The mapping is applied so as to compensate for the distortion in the interfered memory cell.
摘要翻译：一种用于操作存储器（24）的方法包括通过将相应的模拟值写入模拟存储器单元来将数据存储在存储器的模拟存储器单元（32）中。识别一组模拟存储器单元，包括具有与组中的模拟存储器单元的相应模拟值统计相关的失真的干扰单元。在存在于受干扰存储器单元中的复合失真级的集合和统计特性中的模拟存储器单元的可能模拟值的组合之间确定映射。应用映射以补偿受干扰的存储单元中的失真。

7. 发明授权

US08694859B2 Memory device with adaptive capacity 有权
标题翻译：具有适应能力的存储器件
公开(公告)号：US08694859B2
公开(公告)日：2014-04-08
申请号：US13539920
申请日：2012-07-02
申请人： Ofir Shalvi , Dotan Sokolov , Ariel Maislos , Zeev Cohen , Eyal Gurgi , Gil Semo
发明人： Ofir Shalvi , Dotan Sokolov , Ariel Maislos , Zeev Cohen , Eyal Gurgi , Gil Semo
IPC分类号： G06F11/00
CPC分类号： G11C16/349 , G06F2212/7205 , G06F2212/7206 , G11C11/56 , G11C11/5607 , G11C11/5621 , G11C11/5628 , G11C11/5642 , G11C11/565 , G11C11/5657 , G11C11/5671 , G11C11/5678 , G11C27/005 , G11C2211/5621 , G11C2211/5641
摘要： A method for data storage in a memory that includes a plurality of analog memory cells includes estimating respective achievable storage capacities of the analog memory cells. The memory cells are assigned respective storage configurations defining quantities of data to be stored in the memory cells based on the estimated achievable capacities. The data is stored in the memory cells in accordance with the respective assigned storage configurations. The achievable storage capacities of the analog memory cells are re-estimated after the memory has been installed in a host system and used for storing the data in the host system. The storage configurations are modified responsively to the re-estimated achievable capacities.
摘要翻译：一种用于在包括多个模拟存储器单元的存储器中的数据存储的方法包括估计模拟存储器单元的各自可实现的存储容量。根据估计的可实现的容量，为存储器单元分配相应的存储配置，其定义要存储在存储器单元中的数据量。数据根据相应的分配的存储配置存储在存储器单元中。在存储器已经安装在主机系统中并用于在主机系统中存储数据之后，重新估计模拟存储器单元的可实现的存储容量。存储配置根据重新估计的可实现容量进行修改。

8. 发明授权

US08456905B2 Efficient data storage in multi-plane memory devices 有权
标题翻译：在多平面存储设备中高效的数据存储
公开(公告)号：US08456905B2
公开(公告)日：2013-06-04
申请号：US12332370
申请日：2008-12-11
申请人： Yoav Kasorla , Eyal Gurgi , Dotan Sokolov , Ofir Shalvi
发明人： Yoav Kasorla , Eyal Gurgi , Dotan Sokolov , Ofir Shalvi
IPC分类号： G11C11/34
CPC分类号： G06F11/1072 , G06F12/0246 , G06F12/0607 , G06F2212/7208 , G11C29/52
摘要： A method for data storage includes initially storing a sequence of data pages in a memory that includes multiple memory arrays, such that successive data pages in the sequence are stored in alternation in a first number of the memory arrays. The initially-stored data pages are rearranged in the memory so as to store the successive data pages in the sequence in a second number of the memory arrays, which is less than the first number. The rearranged data pages are read from the second number of the memory arrays.
摘要翻译：一种用于数据存储的方法包括：首先将数据页序列存储在包括多个存储器阵列的存储器中，使得序列中的连续数据页被交替地存储在第一数量的存储器阵列中。将初始存储的数据页重新排列在存储器中，以便将序列中的连续数据页存储在小于第一数量的第二数量的存储器阵列中。从第二数量的存储器阵列中读取重新排列的数据页。

9. 发明申请

US20100157641A1 MEMORY DEVICE WITH ADAPTIVE CAPACITY 有权
标题翻译：具有适应能力的存储器件
公开(公告)号：US20100157641A1
公开(公告)日：2010-06-24
申请号：US12063544
申请日：2007-05-10
申请人： Ofir Shalvi , Dotan Sokolov , Ariel Maislos , Zeev Cohen , Eyal Gurgi , Gil Semo
发明人： Ofir Shalvi , Dotan Sokolov , Ariel Maislos , Zeev Cohen , Eyal Gurgi , Gil Semo
IPC分类号： G11C27/00 , G11C8/00 , G11C7/00
CPC分类号： G11C16/349 , G06F2212/7205 , G06F2212/7206 , G11C11/56 , G11C11/5607 , G11C11/5621 , G11C11/5628 , G11C11/5642 , G11C11/565 , G11C11/5657 , G11C11/5671 , G11C11/5678 , G11C27/005 , G11C2211/5621 , G11C2211/5641
摘要： A method for data storage in a memory (28) that includes a plurality of analog memory cells (32) includes estimating respective achievable storage capacities of the analog memory cells. The memory cells are assigned respective storage configurations defining quantities of data to be stored in the memory cells based on the estimated achievable capacities. The data is stored in the memory cells in accordance with the respective assigned storage configurations. The achievable storage capacities of the analog memory cells are re-estimated after the memory has been installed in a host system and used for storing the data in the host system. The storage configurations are modified responsively to the re-estimated achievable capacities.
摘要翻译：一种用于在包括多个模拟存储器单元（32）的存储器（28）中的数据存储的方法包括估计模拟存储器单元的各个可实现的存储容量。根据估计的可实现的容量，为存储器单元分配相应的存储配置，其定义要存储在存储器单元中的数据量。数据根据相应的分配的存储配置存储在存储器单元中。在存储器已经安装在主机系统中并用于在主机系统中存储数据之后，重新估计模拟存储器单元的可实现的存储容量。存储配置根据重新估计的可实现容量进行修改。

10. 发明申请

US20090168524A1 WEAR LEVEL ESTIMATION IN ANALOG MEMORY CELLS 有权
标题翻译：在模拟记忆细胞中磨损水平估计
公开(公告)号：US20090168524A1
公开(公告)日：2009-07-02
申请号：US12344233
申请日：2008-12-25
申请人： Oren Golov , Eyal Gurgi , Dotan Sokolov , Yoav Kasorla , Shai Winter
发明人： Oren Golov , Eyal Gurgi , Dotan Sokolov , Yoav Kasorla , Shai Winter
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C27/005 , G11C16/349 , G11C16/3495
摘要： A method for operating a memory includes applying at least one pulse to a group of analog memory cells, so as to cause the memory cells in the group to assume respective storage values. After applying the pulse, the respective storage values are read from the memory cells in the group. One or more statistical properties of the read storage values are computed. A wear level of the group of the memory cells is estimated responsively to the statistical properties.
摘要翻译：一种用于操作存储器的方法包括将至少一个脉冲施加到一组模拟存储器单元，以便使该组中的存储器单元呈现相应的存储值。在应用脉冲之后，从组中的存储器单元读取相应的存储值。计算读取存储值的一个或多个统计属性。响应于统计属性来估计存储器单元组的磨损水平。

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