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1. 发明公开

US20230197869A1 OPTOELECTRONIC DEVICE 审中-公开
公开(公告)号：US20230197869A1
公开(公告)日：2023-06-22
申请号：US18052325
申请日：2022-11-03
申请人： OXFORD UNIVERSITY INNOVATION LIMITED
发明人： HENRY JAMES SNAITH , EDWARD JAMES WILLIAM CROSSLAND , ANDREW HEY , JAMES BALL , MICHAEL LEE , PABLO DOCAMPO
IPC分类号： H01L31/036 , C23C14/06 , H10K30/15 , H10K85/00 , H01L31/0224 , H01L31/0352 , H01L31/0725 , H01L31/18
CPC分类号： H01L31/036 , C23C14/06 , H01L31/0725 , H01L31/1864 , H01L31/1884 , H01L31/022466 , H01L31/035272 , H10K30/15 , H10K30/151 , H10K85/00 , H10K71/40 , Y02E10/549
摘要： The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p- type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer dis -posed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.

2. 发明申请

US20220285568A1 OPTOELECTRONIC DEVICE COMPRISING PEROVSKITES 有权
公开(公告)号：US20220285568A1
公开(公告)日：2022-09-08
申请号：US17653795
申请日：2022-03-07
申请人： OXFORD UNIVERSITY INNOVATION LIMITED
发明人： HENRY SNAITH , MICHAEL LEE
IPC分类号： H01L31/0264 , H01L51/42 , H01L51/00 , H01G9/20
摘要： The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device. The invention additionally provides the use of a layer comprising the porous material as a photoactive layer in an optoelectronic device. Further provided is a photoactive layer for an optoelectronic device, which photoactive layer comprises the porous material.

3. 发明申请

US20220393048A1 OPTOELECTRONIC DEVICE 有权
公开(公告)号：US20220393048A1
公开(公告)日：2022-12-08
申请号：US17818187
申请日：2022-08-08
申请人： OXFORD UNIVERSITY INNOVATION LIMITED
发明人： HENRY JAMES SNAITH , EDWARD JAMES WILLIAM CROSSLAND , ANDREW HEY , JAMES BALL , MICHAEL LEE , PABLO DOCAMPO
IPC分类号： H01L31/036 , C23C14/06 , H01L51/42 , H01L31/0224 , H01L31/0352 , H01L31/0725 , H01L31/18 , H01L51/00
摘要： The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.

4. 发明申请

US20220262963A1 OPTOELECTRONIC DEVICE COMPRISING PEROVSKITES 有权
公开(公告)号：US20220262963A1
公开(公告)日：2022-08-18
申请号：US17653789
申请日：2022-03-07
申请人： OXFORD UNIVERSITY INNOVATION LIMITED
发明人： HENRY SNAITH , MICHAEL LEE
IPC分类号： H01L31/0264 , H01L51/42 , H01L51/00 , H01G9/20
摘要： The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device. The invention additionally provides the use of a layer comprising the porous material as a photoactive layer in an optoelectronic device. Further provided is a photoactive layer for an optoelectronic device, which photoactive layer comprises the porous material.

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