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1. 发明申请

US20190259919A1 Methods for producing a conversion element and an optoelectronic component 审中-公开
公开(公告)号：US20190259919A1
公开(公告)日：2019-08-22
申请号：US15932366
申请日：2018-02-16
申请人： OSRAM Opto Semiconductors GmbH
发明人： Alan Piquette , Adam Scotch , Maxim N. Tchoul , Gertrud Kraeuter
IPC分类号： H01L33/50
摘要： The invention relates to a method for producing a conversion element for an optoelectronic component comprising the steps of: A) Producing a first layer, for that purpose: A1) Providing a polysiloxane precursor material, which is liquid, A2) Mixing a phosphor to the polysiloxane precursor material, wherein the phosphor is suitable for conversion of radiation, A3) Curing the arrangement produced under step A2) to produce a first layer having a phosphor mixed in a cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, where the ratio of T-units to all units is greater than 80%, B) Producing a phosphor-free second layer, for that purpose: B1) Providing the polysiloxane precursor material, which is liquid, B2) Mixing a filler to the polysiloxane precursor material, wherein the filler is in a cured and powdered form, wherein the filler has a refractive index, which is equal to the refractive index of the cured polysiloxane material, B3) Curing the arrangement produced under step B2) to produce a second layer having a filler mixed in the cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, wherein the produced conversion element is formed as a plate having a thickness of at least 100 μm.

2. 发明授权

US11552228B2 Optoelectronic component and method for producing an optoelectronic component 有权
公开(公告)号：US11552228B2
公开(公告)日：2023-01-10
申请号：US16104743
申请日：2018-08-17
申请人： OSRAM Opto Semiconductors GmbH
发明人： Alan Piquette , Maxim N. Tchoul , Darshan Kundaliya , Adam Scotch , Gertrud Kräuter
IPC分类号： H01L33/50 , H01L33/56
摘要： An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor chip including a plurality of pixels, each pixel configured to emit electromagnetic primary radiation from a radiation exit surface and conversion layers located on at least a part of the radiation exit surfaces, wherein the conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in the matrix, and wherein the conversion layers have a thickness of ≤30 μm.

3. 发明授权

US10570333B2 Wavelength conversion element, light emitting device and method for producing a wavelength conversion element 有权
公开(公告)号：US10570333B2
公开(公告)日：2020-02-25
申请号：US15602175
申请日：2017-05-23
申请人： OSRAM OPTO Semiconductors GmbH
发明人： Alan Piquette , Adam Scotch , Gertrud Kraeuter , Matthias Loster
IPC分类号： C09K11/77 , C09K11/02 , H01L33/50 , F21K9/64 , C08K3/22 , C08K3/36 , F21V7/22 , F21Y115/30 , F21Y115/10
摘要： A wavelength conversion element comprising a crosslinked matrix and at least one phosphor dispersed in said matrix, wherein said matrix is made from a precursor material comprising a precursor having a structure chosen from one of the generic formulae is provided. Further, a light emitting device comprising a wavelength conversion element and a method for producing a wavelength conversion element are provided.

4. 发明申请

US20200056091A1 Optoelectronic Component and Method for Producing an Optoelectronic Component 审中-公开
公开(公告)号：US20200056091A1
公开(公告)日：2020-02-20
申请号：US16104743
申请日：2018-08-17
申请人： OSRAM Opto Semiconductors GmbH
发明人： Alan Piquette , Maxim N. Tchoul , Darshan Kundaliya , Adam Scotch , Gertrud Kräuter
IPC分类号： C09K11/02 , H01L33/50 , H01L33/56 , C09K11/77 , C08G77/04 , C09D5/22 , C09D183/04
摘要： An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor chip including a plurality of pixels, each pixel configured to emit electromagnetic primary radiation from a radiation exit surface and conversion layers located on at least a part of the radiation exit surfaces, wherein the conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in the matrix, and wherein the conversion layers have a thickness of ≤30 μm.

5. 发明授权

US11515454B2 Methods for producing a conversion element and an optoelectronic component 有权
公开(公告)号：US11515454B2
公开(公告)日：2022-11-29
申请号：US16909685
申请日：2020-06-23
申请人： OSRAM Opto Semiconductors GmbH
发明人： Alan Piquette , Adam Scotch , Maxim N. Tchoul , Gertrud Kraeuter
IPC分类号： H01L33/56 , H01L33/50
摘要： The invention relates to a method for producing a conversion element for an optoelectronic component comprising the steps of: A) Producing a first layer, for that purpose: A1) Providing a polysiloxane precursor material, which is liquid, A2) Mixing a phosphor to the polysiloxane precursor material, wherein the phosphor is suitable for conversion of radiation, A3) Curing the arrangement produced under step A2) to produce a first layer having a phosphor mixed in a cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, where the ratio of T-units to all units is greater than 80%, B) Producing a phosphor-free second layer, for that purpose: B1) Providing the polysiloxane precursor material, which is liquid, B2) Mixing a filler to the polysiloxane precursor material, wherein the filler is in a cured and powdered form, wherein the filler has a refractive index, which is equal to the refractive index of the cured polysiloxane material, B3) Curing the arrangement produced under step B2) to produce a second layer having a filler mixed in the cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, wherein the produced conversion element is formed as a plate having a thickness of at least 100 μm.

6. 发明授权

US10727379B2 Methods for producing a conversion element and an optoelectronic component 有权
公开(公告)号：US10727379B2
公开(公告)日：2020-07-28
申请号：US15932366
申请日：2018-02-16
申请人： OSRAM Opto Semiconductors GmbH
发明人： Alan Piquette , Adam Scotch , Maxim N. Tchoul , Gertrud Kraeuter
IPC分类号： H01L33/56 , H01L33/50
摘要： The invention relates to a method for producing a conversion element for an optoelectronic component comprising the steps of: A) Producing a first layer, for that purpose: A1) Providing a polysiloxane precursor material, which is liquid, A2) Mixing a phosphor to the polysiloxane precursor material, wherein the phosphor is suitable for conversion of radiation, A3) Curing the arrangement produced under step A2) to produce a first layer having a phosphor mixed in a cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, where the ratio of T-units to all units is greater than 80%, B) Producing a phosphor-free second layer, for that purpose: B1) Providing the polysiloxane precursor material, which is liquid, B2) Mixing a filler to the polysiloxane precursor material, wherein the filler is in a cured and powdered form, wherein the filler has a refractive index, which is equal to the refractive index of the cured polysiloxane material, B3) Curing the arrangement produced under step B2) to produce a second layer having a filler mixed in the cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, wherein the produced conversion element is formed as a plate having a thickness of at least 100 μm.

7. 发明授权

US10662310B2 Optoelectronic component having a conversation element with a high refractive index 有权
$Optoelectronic component having a conversation element with a high refractive index$
公开(公告)号：US10662310B2
公开(公告)日：2020-05-26
申请号：US15960739
申请日：2018-04-24
申请人： OSRAM Opto Semiconductors GmbH
发明人： Maxim N. Tchoul , Thomas Dreeben , Adam Scotch , Alan Piquette , Gertrud Kräuter , Darshan Kundaliya
IPC分类号： C08K3/22 , H01L33/50 , H01L33/56 , C09K11/02 , C09K11/77
摘要： An optoelectronic component includes a semiconductor chip that is able to emit radiation having a wavelength of 400 nm to 490 nm, a conversion element including a reactive polysiloxane matrix material, a wavelength converting phosphor and filler nanoparticles, wherein the filler nanoparticles have a diameter of smaller than 15 nm and modify the refractive index and yield a mixture when added to the reactive polysiloxane matrix material.

8. 发明申请

US20190322837A1 OPTOELECTRONIC COMPONENT 审中-公开
公开(公告)号：US20190322837A1
公开(公告)日：2019-10-24
申请号：US15960739
申请日：2018-04-24
申请人： OSRAM Opto Semiconductors GmbH
发明人： Maxim N. Tchoul , Thomas Dreeben , Adam Scotch , Alan Piquette , Gertrud Kräuter , Darshan Kundaliya
IPC分类号： C08K3/22 , H01L33/50 , H01L33/56 , C09K11/02 , C09K11/77
摘要： An optoelectronic component includes a semiconductor chip that is able to emit radiation having a wavelength of 400 nm to 490 nm, a conversion element including a reactive polysiloxane matrix material, a wavelength converting phosphor and filler nanoparticles, wherein the filler nanoparticles have a diameter of smaller than 15 nm and modify the refractive index and yield a mixture when added to the reactive polysiloxane matrix material.

9. 发明申请

US20180340119A1 WAVELENGTH CONVERSION ELEMENT, LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING A WAVELENGTH CONVERSION ELEMENT 审中-公开
公开(公告)号：US20180340119A1
公开(公告)日：2018-11-29
申请号：US15602175
申请日：2017-05-23
申请人： OSRAM OPTO Semiconductors GmbH
发明人： Alan Piquette , Adam Scotch , Gertrud Kraeuter , Matthias Loster
IPC分类号： C09K11/77 , C09K11/02 , C08K3/22 , C08K3/36 , H01L33/50 , F21V7/22 , F21K9/64
CPC分类号： C09K11/7774 , C08K3/22 , C08K3/36 , C08K2003/2227 , C09K11/02 , C09K11/025 , F21K9/64 , F21V7/22 , F21Y2115/10 , F21Y2115/30 , H01L33/501 , H01L33/502
摘要： A wavelength conversion element comprising a crosslinked matrix and at least one phosphor dispersed in said matrix, wherein said matrix is made from a precursor material comprising a precursor having a structure chosen from one of the generic formulae is provided. Further, a light emitting device comprising a wavelength conversion element and a method for producing a wavelength conversion element are provided.

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