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1. 发明授权

US09716069B2 Semiconductor substrate, image pickup element, and image pickup apparatus 有权
公开(公告)号：US09716069B2
公开(公告)日：2017-07-25
申请号：US14822197
申请日：2015-08-10
申请人： OLYMPUS CORPORATION
发明人： Naohiro Takazawa , Yoshiaki Takemoto
IPC分类号： H01L21/00 , H01L23/544 , H01L27/146 , G03F9/00
CPC分类号： H01L23/544 , G03F9/7076 , G03F9/7084 , H01L27/14623 , H01L27/14634 , H01L27/1464 , H01L27/1469 , H01L2223/54426 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor substrate includes: an alignment mark being formed of a material that reflects a detection light for detecting positions and having a detection edge portion; a light-shielding layer portion having a larger outer shape than the alignment mark, being formed of a material that shields the detection light, and being disposed at a position on a backside of the alignment mark when seen from an incidence side of the detection light; and one or more light-transmitting layer portions being laminated between the alignment mark and the light-shielding layer portion so as to transmit the detection light and not being patterned at least in a range that overlaps the light-shielding layer portion.

2. 发明申请

US20130070133A1 SOLID-STATE IMAGING DEVICE, IMAGING DEVICE, AND SIGNAL READING METHOD 审中-公开
标题翻译：固态成像装置，成像装置和信号读取方法
公开(公告)号：US20130070133A1
公开(公告)日：2013-03-21
申请号：US13680492
申请日：2012-11-19
申请人： OLYMPUS CORPORATION
发明人： Naohiro Takazawa
IPC分类号： H04N5/335
CPC分类号： H04N5/335 , H04N5/3745 , H04N5/378 , H04N5/379
摘要： Provided are a solid-state imaging device, an imaging device, and a signal reading method, which may reduce the degradation of signal quality, suppress an increase in a chip area, and suppress an increase in current consumption. The solid-state imaging device includes a plurality of pixels classified as first to nth (where n is an integer greater than or equal to 2) pixels, wherein each of the plurality of pixels includes a photoelectric conversion element arranged on a first substrate, an amplification circuit configured to output an amplified signal by amplifying a signal generated by the photoelectric conversion element, and a signal accumulation circuit arranged on a second substrate and configured to accumulate the amplified signal output from the amplification circuit, and a control unit configured to control a drive current to be exclusively supplied to the amplification circuit of each of the first to nth pixels.
摘要翻译：提供了可以降低信号质量劣化，抑制芯片面积增加并抑制电流消耗增加的固态成像装置，成像装置和信号读取方法。固态成像装置包括分类为第一至第n（n为大于等于2的整数）的多个像素，其中，所述多个像素中的每一个包括布置在第一基板上的光电转换元件，放大电路，被配置为通过放大由光电转换元件产生的信号来输出放大信号;以及信号累积电路，其布置在第二基板上，并被配置为累积从放大电路输出的放大信号;以及控制单元，驱动电流被专门提供给第一至第n像素中的每一个的放大电路。

3. 发明申请

US20160284754A1 SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS 审中-公开
标题翻译：半导体器件，固态成像器件和成像器件
公开(公告)号：US20160284754A1
公开(公告)日：2016-09-29
申请号：US15172865
申请日：2016-06-03
申请人： OLYMPUS CORPORATION
发明人： Naohiro Takazawa
IPC分类号： H01L27/146 , H04N5/378
CPC分类号： H01L27/14634 , H01L23/522 , H01L24/05 , H01L27/14 , H01L27/14618 , H01L27/14636 , H01L2224/02166 , H01L2224/04042 , H01L2224/05095 , H01L2224/05552 , H01L2224/48095 , H01L2224/48463 , H01L2924/00014 , H04N5/335 , H04N5/374 , H04N5/378 , H01L2224/45099
摘要： A semiconductor device includes a plurality of substrates including a semiconductor layer and a wiring layer, wherein each of the plurality of substrates is separated from and overlap other substrate of the plurality of substrates in a direction crossing a main surface, and the wiring layer of an edge substrate is arranged between the semiconductor layer of the edge substrate and the substrate adjacent to the edge substrate, a connection portion that electrically connects two adjacent substrates among the plurality of substrates, a resin layer that is arranged between the two adjacent substrates among the plurality of substrates, and a first opening portion that is formed in the semiconductor layer of the edge substrate, the shape of the first opening portion viewed in the direction squarely facing the main surface of the edge substrate being a polygon having five or more sides or a circle.
摘要翻译：半导体器件包括多个基板，其包括半导体层和布线层，其中，所述多个基板中的每一个基板与所述多个基板的与主表面交叉的方向分离并与所述多个基板的其它基板重叠，并且所述布线层边缘基板布置在边缘基板的半导体层和与边缘基板相邻的基板之间，连接部分，其将多个基板中的两个相邻基板电连接，布置在多个基板中的两个相邻基板之间的树脂层以及形成在边缘基板的半导体层中的第一开口部，从与边缘基板的主面正交的方向观察的第一开口部的形状为具有五边以上的多边形或圈。

4. 发明授权

US08847296B2 Solid-state imaging device, imaging apparatus, substrate, semiconductor device and method of manufacturing the solid-state imaging device 有权
标题翻译：固态成像装置，成像装置，基板，半导体装置以及制造固态成像装置的方法
公开(公告)号：US08847296B2
公开(公告)日：2014-09-30
申请号：US13742952
申请日：2013-01-16
申请人： Olympus Corporation
发明人： Mitsuhiro Tsukimura , Naohiro Takazawa , Yoshiaki Takemoto , Hiroshi Kikuchi , Haruhisa Saito , Yoshitaka Tadaki , Yuichi Gomi
IPC分类号： H01L31/062
CPC分类号： H01L25/0657 , H01L23/528 , H01L24/14 , H01L27/14634 , H01L27/14636 , H01L27/14641 , H01L27/1469 , H01L31/02016 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06517 , H01L2924/13091 , H01L2924/00
摘要： A solid-state imaging device is a solid-state imaging device in which a first substrate formed on a first semiconductor wafer and a second substrate formed on a second semiconductor wafer are bonded via connect that electrically connects the substrates, wherein the first substrate includes photoelectric conversion units, the second substrate includes an output circuit that acquires a signal generated by the photoelectric conversion unit via the connector and outputs the signal, and dummy connectors that support the first and second bonded substrates are further arranged in a substrate region in which the connectors are not arranged in a substrate region of at least one of the first substrate and the second substrate.
摘要翻译：固态成像装置是固态成像装置，其中形成在第一半导体晶片上的第一基板和形成在第二半导体晶片上的第二基板通过电连接基板的连接而接合，其中第一基板包括光电转换单元，第二基板包括输出电路，其通过连接器获取由光电转换单元生成的信号并输出信号，并且支撑第一和第二接合基板的虚拟连接器进一步布置在基板区域中，其中连接器不排列在第一基板和第二基板中的至少一个的基板区域中。

5. 发明授权

US10607942B2 Semiconductor device and method for manufacturing semiconductor device 有权
公开(公告)号：US10607942B2
公开(公告)日：2020-03-31
申请号：US16114566
申请日：2018-08-28
申请人： OLYMPUS CORPORATION
发明人： Naohiro Takazawa
IPC分类号： H01L21/00 , H01L23/544 , H01L23/00
摘要： A semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first pad, and a second pad. A first opening and a second opening are formed in a first main surface of the first semiconductor layer. The second semiconductor layer is stacked on the first semiconductor layer. The first pad for wire bonding is disposed in the first opening. The second pad on which an alignment mark is formed is disposed in the second opening. A third opening and a fourth opening penetrate the second semiconductor layer. The first opening overlaps the third opening. The second opening overlaps the fourth opening.

6. 发明申请

US20150348914A1 SEMICONDUCTOR SUBSTRATE, IMAGE PICKUP ELEMENT, AND IMAGE PICKUP APPARATUS 有权
标题翻译：半导体基板，图像拾取元件和图像拾取装置
公开(公告)号：US20150348914A1
公开(公告)日：2015-12-03
申请号：US14822197
申请日：2015-08-10
申请人： OLYMPUS CORPORATION
发明人： Naohiro Takazawa , Yoshiaki Takemoto
IPC分类号： H01L23/544 , H01L27/146
CPC分类号： H01L23/544 , G03F9/7076 , G03F9/7084 , H01L27/14623 , H01L27/14634 , H01L27/1464 , H01L27/1469 , H01L2223/54426 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor substrate includes: an alignment mark being formed of a material that reflects a detection light for detecting positions and having a detection edge portion; a light-shielding layer portion having a larger outer shape than the alignment mark, being formed of a material that shields the detection light, and being disposed at a position on a backside of the alignment mark when seen from an incidence side of the detection light; and one or more light-transmitting layer portions being laminated between the alignment mark and the light-shielding layer portion so as to transmit the detection light and not being patterned at least in a range that overlaps the light-shielding layer portion.
摘要翻译：半导体基板包括：对准标记，其由反射用于检测位置的检测光并具有检测边缘部分的材料形成; 具有比对准标记更大的外形的遮光层部分，由屏蔽检测光的材料形成，并且当从检测光的入射侧观察时，设置在对准标记的背面的位置 ; 并且一个或多个透光层部分层叠在对准标记和遮光层部分之间，以便至少在与遮光层部分重叠的范围内透射检测光并且不被图案化。

7. 发明申请

US20150008593A1 STACKED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：堆叠式半导体器件及其制造方法
公开(公告)号：US20150008593A1
公开(公告)日：2015-01-08
申请号：US14491520
申请日：2014-09-19
申请人： OLYMPUS CORPORATION
发明人： Yoshiaki Takemoto , Naohiro Takazawa , Hiroshi Kikuchi
IPC分类号： H01L23/00 , H01L21/56
CPC分类号： H01L24/32 , H01L21/56 , H01L21/561 , H01L23/10 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/73 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2224/13012 , H01L2224/13014 , H01L2224/13023 , H01L2224/13144 , H01L2224/13147 , H01L2224/16148 , H01L2224/26145 , H01L2224/26175 , H01L2224/29011 , H01L2224/29012 , H01L2224/29013 , H01L2224/29014 , H01L2224/29023 , H01L2224/29076 , H01L2224/29144 , H01L2224/29147 , H01L2224/2919 , H01L2224/32145 , H01L2224/32148 , H01L2224/73103 , H01L2224/73203 , H01L2224/753 , H01L2224/81075 , H01L2224/8109 , H01L2224/81193 , H01L2224/81203 , H01L2224/83075 , H01L2224/8309 , H01L2224/831 , H01L2224/83104 , H01L2224/83191 , H01L2224/83193 , H01L2224/83203 , H01L2224/8385 , H01L2224/8388 , H01L2224/83906 , H01L2224/83986 , H01L2224/9211 , H01L2224/92125 , H01L2224/94 , H01L2225/06513 , H01L2225/06565 , H01L2225/06593 , H01L2924/10253 , H01L2924/163 , H01L2924/186 , H01L2924/00014 , H01L2224/81 , H01L2224/83 , H01L2924/00012
摘要： A stacked semiconductor device includes a first substrate and a second substrate. The first electrode is connected to the second electrode so that the first surface faces the second surface. A tip portion of the first wall section that faces the second substrate is connected to a tip portion of the second wall section that faces the first substrate. The first wall section is connected to the second wall section over an entire circumference. An outside space that is formed in an outside of the first wall section and an outside of the second wall section between the first substrate and the second substrate is filled with a sealing member over the entire circumference.
摘要翻译：叠层半导体器件包括第一衬底和第二衬底。第一电极连接到第二电极，使得第一表面面向第二表面。所述第一壁部的面向所述第二基板的前端部与所述第二壁部的与所述第一基板相对的前端部连接。第一壁部分在整个圆周上连接到第二壁部分。形成在第一壁部的外侧的外部空间和第一基板与第二基板之间的第二壁部的外部在整个圆周上填充有密封部件。

8. 发明授权

US10566292B2 Semiconductor device and method for manufacturing semiconductor device 有权
公开(公告)号：US10566292B2
公开(公告)日：2020-02-18
申请号：US16114566
申请日：2018-08-28
申请人： OLYMPUS CORPORATION
发明人： Naohiro Takazawa
IPC分类号： H01L21/00 , H01L23/544 , H01L23/00
摘要： A semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first pad, and a second pad. A first opening and a second opening are formed in a first main surface of the first semiconductor layer. The second semiconductor layer is stacked on the first semiconductor layer. The first pad for wire bonding is disposed in the first opening. The second pad on which an alignment mark is formed is disposed in the second opening. A third opening and a fourth opening penetrate the second semiconductor layer. The first opening overlaps the third opening. The second opening overlaps the fourth opening.

9. 发明申请

US20180366414A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20180366414A1
公开(公告)日：2018-12-20
申请号：US16114566
申请日：2018-08-28
申请人： OLYMPUS CORPORATION
发明人： Naohiro Takazawa
IPC分类号： H01L23/544 , H01L23/00
摘要： A semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first pad, and a second pad. A first opening and a second opening are formed in a first main surface of the first semiconductor layer. The second semiconductor layer is stacked on the first semiconductor layer. The first pad for wire bonding is disposed in the first opening. The second pad on which an alignment mark is formed is disposed in the second opening. A third opening and a fourth opening penetrate the second semiconductor layer. The first opening overlaps the third opening. The second opening overlaps the fourth opening.

10. 发明申请

US20180061779A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20180061779A1
公开(公告)日：2018-03-01
申请号：US15801588
申请日：2017-11-02
申请人： OLYMPUS CORPORATION
发明人： Naohiro Takazawa , Yoshitaka Tadaki
IPC分类号： H01L23/00 , H01L23/48 , H01L23/522
摘要： A semiconductor device includes a first substrate, a second substrate, a first pad, a second pad, a first micro-bump, a first resin layer, and an insulating layer. The first substrate has a first semiconductor layer and a first wire layer. The second substrate has a second semiconductor layer and a second wire layer. The insulating layer contains an insulating material having hygroscopic properties lower than hygroscopic properties of the first resin layer. The insulating layer penetrates the second substrate and the first resin layer. The insulating layer surrounds the first micro-bump in a first cross section which passes through the first micro-bump, the first resin layer, and the insulating layer and is parallel to the first surface.

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