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1. 发明申请

US20170367596A1 Tonometry Based Blood Pressure Measurements Using a Two-Dimensional Force Sensor Array 审中-公开
公开(公告)号：US20170367596A1
公开(公告)日：2017-12-28
申请号：US15627911
申请日：2017-06-20
申请人： Northwestern University
发明人： Sanjay Mehrotra , Ilya Mikhelson , Alan V. Sahakian
IPC分类号： A61B5/021 , A61B5/00 , A61B5/02
CPC分类号： A61B5/02108 , A61B5/02 , A61B5/021 , A61B5/6824 , A61B5/7214 , A61B2562/0247 , A61B2562/046
摘要： Representative methods, apparatus and systems are disclosed for blood pressure and other vital sign monitoring using arterial applanation tonometry, including ambulatory blood pressure and other vital sign monitoring. A representative system comprises a wearable apparatus. The various embodiments measure blood pressure and other vital sign monitoring using a plurality of pressure sensors of a pressure sensor array, with one or more of the pressure sensors 140 applanating an artery, such as a radial artery. In a first embodiment, a pressure sensor signal is utilized which has the highest cross-coherence with the signals of its nearest pressure sensor neighbors of the pressure sensor array. In a second embodiment, Kalman filtering is utilized for the pressure sensor signals from the pressure sensor array.

2. 发明申请

US20150279990A1 System and Method for Threshold Logic with Electrostatically Formed Nanowire Transistors 有权
标题翻译：具有静电导纳纳米线晶体管的阈值逻辑的系统和方法
公开(公告)号：US20150279990A1
公开(公告)日：2015-10-01
申请号：US14672503
申请日：2015-03-30
申请人： Northwestern University
发明人： Joseph S. Friedman , Alan V. Sahakian , Andrey Godkin , Alex Henning , Yossi Rosenwaks
IPC分类号： H01L29/78 , H01L29/423
CPC分类号： H01L29/7832 , H01L29/42356 , H01L29/775 , H03K19/20
摘要： An electrostatically formed nanowire transistor, includes a source, a drain, and multiple gates surrounding a doped silicon region. The gates include a top gate, a bottom gate, and side gates. The gates induce a channel in said doped silicon region. The channel has a width which is decreased by negative biasing of the side gates, and a height and vertical position controlled by the top and bottom gates.
摘要翻译：静电形成的纳米线晶体管包括源极，漏极和围绕掺杂硅区域的多个栅极。门包括顶门，底栅和侧门。栅极在所述掺杂的硅区域中引发沟道。通道具有通过侧栅极的偏置减小的宽度，以及由顶栅和底栅控制的高度和垂直位置。

3. 发明授权

US10835311B2 Electroporation apparatus and method of using same for ablation of an arbitrary volume 有权
公开(公告)号：US10835311B2
公开(公告)日：2020-11-17
申请号：US14918703
申请日：2015-10-21
申请人： NORTHWESTERN UNIVERSITY
发明人： Alan V. Sahakian , Yearnchee C. Wang
IPC分类号： A61B18/14 , A61N1/32 , A61B18/00 , A61B18/12 , A61N1/05
CPC分类号： A61B18/1477 , A61B2018/0016 , A61B2018/00196 , A61B2018/00613 , A61B2018/124 , A61B2018/143 , A61B2018/1427 , A61B2018/1467 , A61B2018/1475 , A61N1/0502 , A61N1/327
摘要： An electroporation apparatus and the method of using same are provided. The apparatus allows for the ablation of an area of tissue of arbitrary volume. The apparatus includes a plurality of conductive electrodes attached to a base plate and electrically connected to a pulse generator to allow individual electrical actuation of the electrodes. In use, the electrodes are inserted into an area of tissue to be ablated, such that the electrodes are in a first position. Predetermined ones of the electrodes are then activated to ablate tissue surrounding the activated electrodes, while leaving other ones of the electrodes un-activated. The electrodes are then moved to a second position which is different than the first position, and predetermined ones of the electrodes are then activated to ablate tissue surrounding the activated electrodes, while leaving other ones of the electrodes un-activated.

4. 发明申请

US20160113707A1 ELECTROPORATION APPARATUS AND METHOD OF USING SAME FOR ABLATION OF AN ARBITRARY VOLUME 审中-公开
标题翻译：电子装置和使用它们的方法来排除仲裁体积
公开(公告)号：US20160113707A1
公开(公告)日：2016-04-28
申请号：US14918703
申请日：2015-10-21
申请人： NORTHWESTERN UNIVERSITY
发明人： Alan V. Sahakian , Yearnchee C. Wang
IPC分类号： A61B18/14 , A61N1/32
CPC分类号： A61B18/1477 , A61B2018/0016 , A61B2018/00196 , A61B2018/00613 , A61B2018/124 , A61B2018/1427 , A61B2018/143 , A61B2018/1467 , A61B2018/1475 , A61N1/0502 , A61N1/327
摘要： An electroporation apparatus and the method of using same are provided. The apparatus allows for the ablation of an area of tissue of arbitrary volume. The apparatus includes a plurality of conductive electrodes attached to a base pate and electrically connected to a pulse generator to allow individual electrical actuation of the electrodes. In use, the electrodes are inserted into an area of tissue to be ablated, such that the electrodes are in a first position. Predetermined ones of the electrodes are then activated to ablate tissue surrounding the activated electrodes, while leaving other ones of the electrodes un-activated. The electrodes are then moved to a second position which is different than the first position, and predetermined ones of the electrodes are then activated to ablate tissue surrounding the activated electrodes, while leaving other ones of the electrodes un-activated.
摘要翻译：提供电穿孔装置及其使用方法。该装置允许消融任意体积的组织区域。该装置包括多个导电电极，其连接到基座并电连接到脉冲发生器以允许电极的单独电致动。在使用中，将电极插入要消融的组织区域中，使得电极处于第一位置。然后激活预定的电极以消融活化电极周围的组织，同时使其他电极未激活。然后将电极移动到与第一位置不同的第二位置，然后激活预定的电极以消除活化电极周围的组织，同时使其他电极未被激活。

5. 发明申请

US20170309747A1 SYSTEM AND METHOD FOR THRESHOLD LOGIC WITH ELECTROSTATICALLY FORMED NANOWIRE TRANSISTORS 有权
公开(公告)号：US20170309747A1
公开(公告)日：2017-10-26
申请号：US15643811
申请日：2017-07-07
申请人： Northwestern University , RAMOT AT TEL AVIV UNIVERSITY LTD.
发明人： Joseph S. Friedman , Alan V. Sahakian , Andrey Godkin , Alex Henning , Yossi Rosenwaks
IPC分类号： H01L29/78 , H01L29/423 , H01L29/775 , H03K19/20
CPC分类号： H01L29/7832 , H01L29/42356 , H01L29/775 , H03K19/20
摘要： An electrostatically formed nanowire transistor, includes a source, a drain, and multiple gates surrounding a doped silicon region. The gates include a top gate, a bottom gate, and side gates. The gates induce a channel in said doped silicon region. The channel has a width which is decreased by negative biasing of the side gates, and a height and vertical position controlled by the top and bottom gates.

6. 发明授权

US09728636B2 System and method for threshold logic with electrostatically formed nanowire transistors 有权
公开(公告)号：US09728636B2
公开(公告)日：2017-08-08
申请号：US14672503
申请日：2015-03-30
申请人： Northwestern University
发明人： Joseph S. Friedman , Alan V. Sahakian , Andrey Godkin , Alex Henning , Yossi Rosenwaks
IPC分类号： H01L29/775 , H01L29/78 , H01L29/423 , H03K19/20
CPC分类号： H01L29/7832 , H01L29/42356 , H01L29/775 , H03K19/20
摘要： An electrostatically formed nanowire transistor, includes a source, a drain, and multiple gates surrounding a doped silicon region. The gates include a top gate, a bottom gate, and side gates. The gates induce a channel in said doped silicon region. The channel has a width which is decreased by negative biasing of the side gates, and a height and vertical position controlled by the top and bottom gates.

7. 发明申请

US20160180907A1 METHOD FOR COMPUTING WITH COMPLEMENTARY NETWORKS OF MAGNETIC TUNNEL JUNCTIONS 审中-公开
标题翻译：用于计算磁性隧道结的补充网络的方法
公开(公告)号：US20160180907A1
公开(公告)日：2016-06-23
申请号：US15054401
申请日：2016-02-26
申请人： Northwestern University
发明人： Joseph Shimon Friedman , Alan V. Sahakian
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C11/1675 , H01L27/22 , H01L29/82 , H01L43/02 , H01L43/08 , H03K19/18
摘要： A magnetic tunnel junction (MTJ) device is provided that includes a MTJ element and a control wire. The MTJ element includes a top ferromagnet layer formed of a first magnetic material, a tunneling layer, and a bottom ferromagnet layer formed of a second magnetic material. The tunneling layer is mounted between the top ferromagnet layer and the bottom ferromagnet layer. The control wire is configured to conduct a charge pulse. A direction of charge flow in the control wire extends substantially perpendicular to a magnetization direction of the top ferromagnet layer. The control wire is positioned sufficiently close to the top ferromagnet layer to reverse the magnetization direction of the top ferromagnet layer when the charge pulse flows therethrough while not reversing the magnetization direction of the bottom ferromagnet layer when the charge pulse flows therethrough.
摘要翻译：提供了包括MTJ元件和控制线的磁隧道结（MTJ）装置。 MTJ元件包括由第一磁性材料形成的顶部铁磁体层，隧道层和由第二磁性材料形成的底部铁磁体层。隧道层安装在顶部铁磁体层和底部铁磁体层之间。控制线被配置为进行充电脉冲。控制线中的电荷流动方向基本上垂直于顶部铁磁体层的磁化方向延伸。当充电脉冲流过其中时，控制线被定位成足够接近顶部铁磁体层，以反转顶部铁磁体层的磁化方向，而当充电脉冲流经时，控制线不反转底部铁磁体层的磁化方向。

8. 发明申请

US20150091111A1 MAGNETIC TUNNEL JUNCTIONS WITH CONTROL WIRE 有权
标题翻译：带控制线的磁铁隧道
公开(公告)号：US20150091111A1
公开(公告)日：2015-04-02
申请号：US14494813
申请日：2014-09-24
申请人： Northwestern University
发明人： Joseph Shimon Friedman , Alan V. Sahakian
IPC分类号： H01L43/02 , H01L29/82
CPC分类号： G11C11/161 , G11C11/1675 , H01L27/22 , H01L29/82 , H01L43/02 , H01L43/08 , H03K19/18
摘要： A magnetic tunnel junction (MTJ) device is provided that includes a MTJ element and a control wire. The MTJ element includes a top ferromagnet layer formed of a first magnetic material, a tunneling layer, and a bottom ferromagnet layer formed of a second magnetic material. The tunneling layer is mounted between the top ferromagnet layer and the bottom ferromagnet layer. The control wire is configured to conduct a charge pulse. A direction of charge flow in the control wire extends substantially perpendicular to a magnetization direction of the top ferromagnet layer. The control wire is positioned sufficiently close to the top ferromagnet layer to reverse the magnetization direction of the top ferromagnet layer when the charge pulse flows therethrough while not reversing the magnetization direction of the bottom ferromagnet layer when the charge pulse flows therethrough.
摘要翻译：提供了包括MTJ元件和控制线的磁隧道结（MTJ）装置。 MTJ元件包括由第一磁性材料形成的顶部铁磁体层，隧道层和由第二磁性材料形成的底部铁磁体层。隧道层安装在顶部铁磁体层和底部铁磁体层之间。控制线被配置为进行充电脉冲。控制线中的电荷流动方向基本上垂直于顶部铁磁体层的磁化方向延伸。当充电脉冲流过其中时，控制线被定位成足够接近顶部铁磁体层，以反转顶部铁磁体层的磁化方向，而当充电脉冲流经时，控制线不反转底部铁磁体层的磁化方向。

9. 发明授权

US11109768B2 Tonometry based blood pressure measurements using a two-dimensional force sensor array 有权
公开(公告)号：US11109768B2
公开(公告)日：2021-09-07
申请号：US15627911
申请日：2017-06-20
申请人： Northwestern University
发明人： Sanjay Mehrotra , Ilya Mikhelson , Alan V. Sahakian
IPC分类号： A61B5/021 , A61B5/00 , A61B5/02
摘要： Representative methods, apparatus and systems are disclosed for blood pressure and other vital sign monitoring using arterial applanation tonometry, including ambulatory blood pressure and other vital sign monitoring. A representative system comprises a wearable apparatus. The various embodiments measure blood pressure and other vital sign monitoring using a plurality of pressure sensors of a pressure sensor array, with one or more of the pressure sensors 140 applanating an artery, such as a radial artery. In a first embodiment, a pressure sensor signal is utilized which has the highest cross-coherence with the signals of its nearest pressure sensor neighbors of the pressure sensor array. In a second embodiment, Kalman filtering is utilized for the pressure sensor signals from the pressure sensor array.

10. 发明授权

US10594319B2 System and method for complimentary VT-drop ambipolar carbon nanotube logic 有权
公开(公告)号：US10594319B2
公开(公告)日：2020-03-17
申请号：US15591833
申请日：2017-05-10
申请人： Northwestern University
发明人： Joseph S. Friedman , Michael L. Geier , Mark C. Hersam , Alan V. Sahakian
IPC分类号： H03K19/21 , H03K19/082 , G06F7/501 , H01L51/05 , H01L51/00
摘要： A logic gate and a cascaded logic family is described that uses the unique ambipolar behavior, e.g., of carbon nanotubes. A complementary VT-drop ambipolar carbon nanotube logic can provide a decrease in device count compared to previous ambipolar carbon nanotube field effect transistor logic structures, enabling power and/or speed improvements.

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