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    • 4. 发明授权
    • Method of manufacturing a monolithic ceramic electronic device
    • 单片陶瓷电子器件的制造方法
    • US5985068A
    • 1999-11-16
    • US807437
    • 1997-02-28
    • Hiroyuki KawakamiYoshiaki KohnoNoriyuki Kubodera
    • Hiroyuki KawakamiYoshiaki KohnoNoriyuki Kubodera
    • H01G4/30H01L21/48H05K1/03H05K3/10H05K3/20H05K3/46B32B31/26
    • H01G4/308H01L21/4857H05K3/108H05K3/205H05K1/0306H05K2203/0156H05K2203/0315H05K2203/1142H05K3/4611H05K3/4629Y10T29/49163
    • A method of manufacturing a monolithic ceramic electronic device includes the following steps: forming a first metal film on a PET film; forming a multilayered metal film by forming a second metal film on a part of the first metal film, the second metal film being thicker than the first metal film; forming a monolithic ceramic structure including the multilayered metal film; forming the first metal film, which is partially overlain by the second metal film in the monolithic ceramic structure, into an insulating structure in such a manner that metal components forming the first metal film are diffused into the ceramics; and firing the ceramics. Disclosed also is a monolithic ceramic electronic device manufactured by the method. As a result, a stepped portion between a portion in which the internal electrodes overlap one another and a portion in which the internal electrodes do not overlap can be prevented from being formed, and delamination can effectively be prevented, whereby a monolithic ceramic electronic device exhibiting stable characteristics and a method for manufacturing the monolithic ceramic electronic device can be obtained.
    • 一种制造单片陶瓷电子器件的方法包括以下步骤:在PET膜上形成第一金属膜; 通过在所述第一金属膜的一部分上形成第二金属膜来形成多层金属膜,所述第二金属膜比所述第一金属膜厚; 形成包括所述多层金属膜的整体式陶瓷结构体; 将形成第一金属膜的金属成分扩散到陶瓷中的形成第一金属膜,该第一金属膜部分地被整块陶瓷结构体中的第二金属膜覆盖,形成绝缘结构; 并烧制陶瓷。 还公开了通过该方法制造的单片陶瓷电子器件。 结果,可以防止形成内部电极彼此重叠的部分和内部电极不重叠的部分之间的阶梯部分,并且可以有效地防止分层,从而形成具有 可以获得稳定的特性和制造单片陶瓷电子器件的方法。