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1. 发明授权

US08368049B2 Nanowire transistor and method for fabricating the same 有权
标题翻译：纳米线晶体管及其制造方法
公开(公告)号：US08368049B2
公开(公告)日：2013-02-05
申请号：US13399521
申请日：2012-02-17
申请人： Takahiro Kawashima , Tohru Saitoh , Kenji Harada , Norishige Nanai , Takayuki Takeuchi
发明人： Takahiro Kawashima , Tohru Saitoh , Kenji Harada , Norishige Nanai , Takayuki Takeuchi
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01L29/0673 , H01L29/66772 , H01L29/78696
摘要： A nanowire transistor according to the present invention includes: at least one nanowire 13 including a core portion 13a that functions as a channel region and an insulating shell portion 13b that covers the surface of the core portion 13a; source and drain electrodes 14 and 15, which are connected to the nanowire 13; and a gate electrode 21 for controlling conductivity in at least a part of the core portion 13a of the nanowire 13. The core portion 13a is made of semiconductor single crystals including Si and has a cross section with a curved profile on a plane that intersects with the longitudinal axis thereof. The insulating shell portion 13b is made of an insulator including Si and functions as at least a portion of a gate insulating film.
摘要翻译：根据本发明的纳米线晶体管包括：至少一个纳米线13，其包括用作沟道区的芯部13a和覆盖芯部13a的表面的绝缘壳部13b; 源极和漏极14和15，其连接到纳米线13; 以及用于控制纳米线13的芯部13a的至少一部分的导电性的栅电极21.芯部13a由包含Si的半导体单晶制成，并且在与其纵轴。绝缘外壳部分13b由包括Si的绝缘体制成，并且起到至少一部分栅极绝缘膜的作用。

2. 发明申请

US20070012922A1 Field effect transistor and display using same 有权
标题翻译：场效应晶体管和显示器使用相同
公开(公告)号：US20070012922A1
公开(公告)日：2007-01-18
申请号：US10557059
申请日：2005-01-12
申请人： Kenji Harada , Takayuki Takeuchi , Norishige Nanai , Kazunori Komori
发明人： Kenji Harada , Takayuki Takeuchi , Norishige Nanai , Kazunori Komori
IPC分类号： H01L29/76
CPC分类号： H01L51/0541 , H01L51/0512 , H01L51/0545
摘要： The present invention provides a field effect transistor that includes a semiconductor layer (15) containing an organic substance, and a first electrode (16), a second electrode (12), and a third electrode (14) that are not in contact with each other at least electrically. The first electrode (16) is arranged above the semiconductor layer (15), the second electrode (12) is arranged below the semiconductor layer (15), and the third electrode (14) is arranged beside the semiconductor layer (15). The semiconductor layer (15) is connected electrically to two electrodes selected from the first electrode (16), the second electrode (12), and the third electrode (14), and the electrically insulating layers (13,17) are interposed between the electrodes (12, 14, 16). The first electrode (16) lies over the semiconductor layer (15) so as to extend beyond the periphery of the semiconductor layer (15). With this configuration, it becomes possible to provide a field effect transistor that is highly resistant to air and water and thus has a long lifetime even though an organic semiconductor is used therein, and a display device using such a field effect transistor.
摘要翻译：本发明提供了一种场效应晶体管，其包括含有有机物质的半导体层（15），以及与每个不接触的第一电极（16），第二电极（12）和第三电极（14）其他至少电。第一电极（16）配置在半导体层（15）的上方，第二电极（12）配置在半导体层（15）的下方，第三电极（14）配置在半导体层（15）的旁边。半导体层（15）电连接到从第一电极（16），第二电极（12）和第三电极（14）中选择的两个电极，并且电绝缘层（13,17）介于电极（12,14,16）。第一电极（16）位于半导体层（15）之上，以便延伸超出半导体层（15）的周边。利用这种配置，可以提供一种对空气和水具有高度抗性的场效应晶体管，并且因此即使在其中使用有机半导体也具有长的寿命，以及使用这种场效应晶体管的显示装置。

3. 发明申请

US20070138933A1 Display apparatus 有权
标题翻译：显示装置
公开(公告)号：US20070138933A1
公开(公告)日：2007-06-21
申请号：US10583071
申请日：2004-11-18
申请人： Takayuki Takeuchi , Norishige Nanai
发明人： Takayuki Takeuchi , Norishige Nanai
IPC分类号： H01J63/04
CPC分类号： H01L27/3274 , G02F1/133305 , G02F1/1368 , G02F2202/02 , H01L27/12 , H01L27/124 , H01L27/3248 , H01L27/326 , H01L51/5206
摘要： In a display apparatus according to the present invention, a pixel is driven by using a thin film transistor (10) including an organic material in at least an active layer. The thin film transistor unit (10) and a display element unit (20) are laminated on a substrate (11) in this order, and a pixel electrode (15) formed on a substrate (10) side of the display element unit (20) also functions as a drain electrode of the thin film transistor (10). Therefore, when an organic material is used for a transistor for driving a display apparatus, there is provided a display apparatus that can provide effective protection without increasing the number of constituent members.
摘要翻译：在根据本发明的显示装置中，通过在至少有源层中使用包括有机材料的薄膜晶体管（10）来驱动像素。薄膜晶体管单元（10）和显示元件单元（20）依次层叠在基板（11）上，形成在显示元件单元（20）的基板（10）侧的像素电极）还用作薄膜晶体管（10）的漏电极。因此，当将有机材料用于驱动显示装置的晶体管时，提供一种能够在不增加构成部件的数量的情况下提供有效的保护的显示装置。

4. 发明授权

US07858968B2 Field effect transistor and method of fabricating the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US07858968B2
公开(公告)日：2010-12-28
申请号：US10564755
申请日：2004-07-13
申请人： Norishige Nanai , Naohide Wakita , Takayuki Takeuchi
发明人： Norishige Nanai , Naohide Wakita , Takayuki Takeuchi
IPC分类号： H01L35/24 , H01L51/00 , H01L29/04 , H01L31/036
CPC分类号： H01L51/0545 , B82Y10/00 , H01L27/3244 , H01L51/0048 , H01L51/0595
摘要： A field effect transistor according to the present invention has a semiconductor layer through which carriers injected from a source region travel toward a drain region, the semiconductor layer being formed from a composite material including an organic semiconductor material and nanotubes. The nanotubes may be nanotubes including plural ones joined with each other.
摘要翻译：根据本发明的场效应晶体管具有半导体层，通过该半导体层从源极区域注入载流子朝向漏极区域，该半导体层由包含有机半导体材料和纳米管的复合材料形成。纳米管可以是包括彼此连接的多个的纳米管。

5. 发明申请

US20070108480A1 Field effect transistor and method of fabricating the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20070108480A1
公开(公告)日：2007-05-17
申请号：US10564755
申请日：2004-07-13
申请人： Norishige Nanai , Naohide Wakita , Takayuki Takeuchi
发明人： Norishige Nanai , Naohide Wakita , Takayuki Takeuchi
IPC分类号： H01L29/76
CPC分类号： H01L51/0545 , B82Y10/00 , H01L27/3244 , H01L51/0048 , H01L51/0595
摘要： A field effect transistor according to the present invention has a semiconductor layer through which carriers injected from a source region travel toward a drain region, the semiconductor layer being formed from a composite material including an organic semiconductor material and nanotubes. The nanotubes may be nanotubes including plural ones joined with each other.
摘要翻译：根据本发明的场效应晶体管具有半导体层，通过该半导体层从源极区域注入载流子朝向漏极区域，该半导体层由包含有机半导体材料和纳米管的复合材料形成。纳米管可以是包括彼此连接的多个的纳米管。

6. 发明申请

US20060214192A1 Field effect transistor, electrical device array and method for manufacturing those 审中-公开
标题翻译：场效应晶体管，电器阵列及其制造方法
公开(公告)号：US20060214192A1
公开(公告)日：2006-09-28
申请号：US10553860
申请日：2004-11-30
申请人： Norishige Nanai , Takayuki Takeuchi
发明人： Norishige Nanai , Takayuki Takeuchi
IPC分类号： H01L29/76
CPC分类号： H01L51/002 , B82Y10/00 , H01L51/0004 , H01L51/0035 , H01L51/0048 , H01L51/0052 , H01L51/0545
摘要： A field effect transistor of the present invention includes: a gate electrode formed on a substrate; a gate insulation layer formed on the gate electrode: a source electrode and a drain electrode that are formed on the gate insulation layer; a n-type semiconductor layer including carbon nanotube, formed between the source electrode and the drain electrode so as to contact with the source electrode and the drain electrode; and a n-type modifying polymer layer formed on the n-type semiconductor layer, the n-type modifying polymer layer being for converting a polarity of the carbon nanotube from an original polarity of p-type into n-type and for stabilizing the polarity. The semiconductor characteristics of CNT are converted concurrently with the formation of the semiconductor protective layer, whereby the manufacturing process can be simplified. Thereby, a CNT-FET circuit that is stable even in the air can be provided.
摘要翻译：本发明的场效应晶体管包括：形成在基板上的栅电极; 形成在所述栅电极上的栅极绝缘层：形成在所述栅极绝缘层上的源电极和漏电极; 包括碳纳米管的n型半导体层，形成在源极和漏极之间，以与源电极和漏电极接触; n型改性聚合物层，形成在n型半导体层上的n型改性聚合物层，n型改性聚合物层用于将碳纳米管的极性从p型的初始极性转换成n型并使极性稳定。与半导体保护层的形成同时地转换CNT的半导体特性，从而可以简化制造工艺。由此，能够提供即使在空气中也稳定的CNT-FET电路。

7. 发明申请

US20120156833A1 NANOWIRE TRANSISTOR AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：纳米晶体管及其制造方法
公开(公告)号：US20120156833A1
公开(公告)日：2012-06-21
申请号：US13399521
申请日：2012-02-17
申请人： Takahiro Kawashima , Tohru Saitoh , Kenji Harada , Norishige Nanai , Takayuki Takeuchi
发明人： Takahiro Kawashima , Tohru Saitoh , Kenji Harada , Norishige Nanai , Takayuki Takeuchi
IPC分类号： H01L21/336
CPC分类号： H01L29/0673 , H01L29/66772 , H01L29/78696
摘要： A nanowire transistor according to the present invention includes: at least one nanowire 13 including a core portion 13a that functions as a channel region and an insulating shell portion 13b that covers the surface of the core portion 13a; source and drain electrodes 14 and 15, which are connected to the nanowire 13; and a gate electrode 21 for controlling conductivity in at least a part of the core portion 13a of the nanowire 13. The core portion 13a is made of semiconductor single crystals including Si and has a cross section with a curved profile on a plane that intersects with the longitudinal axis thereof. The insulating shell portion 13b is made of an insulator including Si and functions as at least a portion of a gate insulating film.
摘要翻译：根据本发明的纳米线晶体管包括：至少一个纳米线13，其包括用作沟道区的芯部13a和覆盖芯部13a的表面的绝缘壳部13b; 源极和漏极14和15，其连接到纳米线13; 以及用于控制纳米线13的芯部13a的至少一部分的导电性的栅电极21.芯部13a由包含Si的半导体单晶制成，并且在与其纵轴。绝缘外壳部分13b由包括Si的绝缘体制成，并且起到至少一部分栅极绝缘膜的作用。

8. 发明授权

US08188643B2 Display apparatus 有权
标题翻译：显示装置
公开(公告)号：US08188643B2
公开(公告)日：2012-05-29
申请号：US10583071
申请日：2004-11-18
申请人： Takayuki Takeuchi , Norishige Nanai
发明人： Takayuki Takeuchi , Norishige Nanai
IPC分类号： H01J63/04
CPC分类号： H01L27/3274 , G02F1/133305 , G02F1/1368 , G02F2202/02 , H01L27/12 , H01L27/124 , H01L27/3248 , H01L27/326 , H01L51/5206
摘要： In a display apparatus according to the present invention, a pixel is driven by using a thin film transistor (10) including an organic material in at least an active layer. The thin film transistor unit (10) and a display element unit (20) are laminated on a substrate (11) in this order, and a pixel electrode (15) formed on a substrate (10) side of the display element unit (20) also functions as a drain electrode of the thin film transistor (10). Therefore, when an organic material is used for a transistor for driving a display apparatus, there is provided a display apparatus that can provide effective protection without increasing the number of constituent members.
摘要翻译：在根据本发明的显示装置中，通过在至少有源层中使用包括有机材料的薄膜晶体管（10）来驱动像素。薄膜晶体管单元（10）和显示元件单元（20）依次层叠在基板（11）上，形成在显示元件单元（20）的基板（10）侧的像素电极）还用作薄膜晶体管（10）的漏电极。因此，当将有机材料用于驱动显示装置的晶体管时，提供一种能够在不增加构成部件的数量的情况下提供有效的保护的显示装置。

9. 发明授权

US07564051B2 Thin-film transistor including organic semiconductor and inorganic particles, and manufacturing method therefor 有权
标题翻译：包括有机半导体和无机颗粒的薄膜晶体管及其制造方法
公开(公告)号：US07564051B2
公开(公告)日：2009-07-21
申请号：US10564754
申请日：2004-07-15
申请人： Takayuki Takeuchi , Norishige Nanai
发明人： Takayuki Takeuchi , Norishige Nanai
IPC分类号： H01L23/48
CPC分类号： H01L51/0566 , H01L51/0068 , H01L2924/0002 , H01L2924/00
摘要： A thin-film transistor (100) of the present invention comprises a semiconductor layer (4), and a source region (5), a drain region (6), and a gate region (2) which formed on the semiconductor layer to be separated from each other. Said semiconductor layer is made of composite material, and said composite material comprises organic semiconductive material and at least one kind of inorganic material particles dispersed inside the organic semiconductive material.
摘要翻译：本发明的薄膜晶体管（100）包括半导体层（4）和形成在半导体层上的源极区（5），漏极区（6）和栅极区（2）彼此分离。所述半导体层由复合材料制成，所述复合材料包括有机半导体材料和分散在有机半导体材料内的至少一种无机材料颗粒。

10. 发明授权

US07382040B2 Organic field effect transistor and display using same 有权
标题翻译：有机场效应晶体管和显示器使用相同
公开(公告)号：US07382040B2
公开(公告)日：2008-06-03
申请号：US10557059
申请日：2005-01-12
申请人： Kenji Harada , Takayuki Takeuchi , Norishige Nanai , Kazunori Komori
发明人： Kenji Harada , Takayuki Takeuchi , Norishige Nanai , Kazunori Komori
IPC分类号： H01L23/58
CPC分类号： H01L51/0541 , H01L51/0512 , H01L51/0545
摘要： The present invention provides a field effect transistor that includes a semiconductor layer (15) containing an organic substance, and a first electrode (16), a second electrode (12), and a third electrode (14) that are not in contact with each other at least electrically. The first electrode (16) is arranged above the semiconductor layer (15), the second electrode (12) is arranged below the semiconductor layer (15), and the third electrode (14) is arranged beside the semiconductor layer (15). The semiconductor layer (15) is connected electrically to two electrodes selected from the first electrode (16), the second electrode (12), and the third electrode (14), and the electrically insulating layers (13,17) are interposed between the electrodes (12, 14, 16). The first electrode (16) lies over the semiconductor layer (15) so as to extend beyond the periphery of the semiconductor layer (15). With this configuration, it becomes possible to provide a field effect transistor that is highly resistant to air and water and thus has a long lifetime even though an organic semiconductor is used therein, and a display device using such a field effect transistor.
摘要翻译：本发明提供了一种场效应晶体管，其包括含有有机物质的半导体层（15），以及与每个不接触的第一电极（16），第二电极（12）和第三电极（14）其他至少电。第一电极（16）配置在半导体层（15）的上方，第二电极（12）配置在半导体层（15）的下方，第三电极（14）配置在半导体层（15）的旁边。半导体层（15）电连接到从第一电极（16），第二电极（12）和第三电极（14）中选择的两个电极，并且电绝缘层（13,17）介于电极（12,14,16）。第一电极（16）位于半导体层（15）之上，以便延伸超出半导体层（15）的周边。利用这种配置，可以提供一种对空气和水具有高度抗性的场效应晶体管，并且因此即使在其中使用有机半导体也具有长的寿命，以及使用这种场效应晶体管的显示装置。

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