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    • 9. 发明申请
    • Semiconductor Device and manufacturing Method of Semiconductor Device
    • 半导体器件及其制造方法
    • US20090159950A1
    • 2009-06-25
    • US12338113
    • 2008-12-18
    • Masayoshi IshibashiMidori Kato
    • Masayoshi IshibashiMidori Kato
    • H01L29/788H01L21/3205
    • H01L51/055H01L51/0023H01L51/0545H01L51/102
    • A conductor pattern including a gate electrode and an auxiliary pattern spaced apart by a narrow gap is formed on a substrate, an insulating film for a gate insulating film is formed so as to cover the same, a resist film is formed thereon, and the resist film is exposed from a back surface side of the substrate. In the exposure, the conductor pattern functions as a mask, but a resolution is reduced so that the resist film cannot resolve the dimension of the gap, whereby a portion corresponding to the gap is not formed in the resist pattern after development. By the lift-off method using the resist pattern, the source and drain electrodes aligned with the gate electrode are formed. The shape of the source and drain electrodes can be adjusted to an arbitrary shape by adjusting the shape of the auxiliary pattern.
    • 在基板上形成包括栅极电极和间隔开的辅助图案的导体图案,形成栅极绝缘膜用绝缘膜以覆盖该绝缘膜,在其上形成抗蚀膜,抗蚀剂 膜从基板的背面侧露出。 在曝光中,导体图案用作掩模,但分辨率降低,使得抗蚀剂膜不能解决间隙的尺寸,由此在显影之后在抗蚀剂图案中不形成与间隙相对应的部分。 通过使用抗蚀剂图案的剥离方法,形成与栅电极对准的源电极和漏电极。 通过调整辅助图案的形状,能够将源电极和漏电极的形状调整为任意形状。