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    • 6. 发明授权
    • Sample stage device
    • 样品台装置
    • US08835872B2
    • 2014-09-16
    • US13806989
    • 2011-06-23
    • Takashi Kobayashi
    • Takashi Kobayashi
    • H01J37/20
    • H01J37/20H01J2237/20285H01J2237/20292H01J2237/2817H01L21/68
    • A sample stage device (10) is so configured as to calculate ideal position information xtg(i), tg(i) per predetermined period that is unaffected by drive conditions relating to gaps (25, 26), etc., and to determine, per predetermined cycle and in real time, deviations dx(i), dy(i) between real-time measured positions x(i), y(i) by position detectors comprising laser interferometers (33, 34), etc., and ideal position information xtg(i), tg(i). In addition, it calculates, based on deviations dx(i), dy(i) thus determined, such speed command values vx(i), vy(i) for motors (27, 28) that measured values x(i), y(i) would follow ideal position information xtg(i), tg(i), and performs stable and high-speed positioning control for a sample table (11) through feedback control that controls speed in real time. Thus, with respect to a sample stage device, it is possible to provide a stable and high-speed positioning control method for a sample table, which is capable of suppressing noise caused by thermal drift and vibration, without being affected by drive conditions, such as the initial states of gaps, etc.
    • 样品台装置(10)被配置为计算不受与间隙(25,26)等有关的驱动条件的影响的每预定周期的理想位置信息xtg(i),tg(i) 并且实时地通过包括激光干涉仪(33,34)的位置检测器等实时测量位置x(i),y(i)之间的偏差dx(i),dy(i)和理想 位置信息xtg(i),tg(i)。 另外,根据如此确定的偏差dx(i),dy(i),计算出测量值x(i),y(i)的电动机(27,28)的速度指令值vx(i),vy (i)将遵循理想位置信息xtg(i),tg(i),并且通过实时控制速度的反馈控制对样本表(11)执行稳定和高速定位控制。 因此,对于样品台装置,可以提供一种用于样品台的稳定且高速的定位控制方法,其能够抑制由热漂移和振动引起的噪声,而不受驱动条件的影响,例如 作为差距的初始状态等
    • 8. 发明授权
    • Ultrasonic probe and ultrasonic diagnostic apparatus using the same
    • 超声波探头和超声波诊断仪使用相同
    • US08758253B2
    • 2014-06-24
    • US12513858
    • 2007-11-06
    • Shuzo SanoAkifumi SakoTakashi KobayashiMikio Izumi
    • Shuzo SanoAkifumi SakoTakashi KobayashiMikio Izumi
    • A61B8/14A61B8/00
    • A61B8/4281A61B8/4455A61B8/4483B06B1/0292H04R19/005
    • An ultrasonic probe is disclosed which includes a cMUT chip having a plurality of vibration elements whose electromechanical coupling coefficient or sensitivity is changed according to a bias voltage and transmitting and receiving ultrasonic waves, an acoustic lens arranged above the cMUT chip, and a backing layer arranged below the cMUT chip. An electric leakage preventing unit is provided at the ultrasonic wave transmission/reception surface side of the acoustic lens or between the acoustic lens and the cMUT chip. The electric leakage preventing unit can be, for example, an insulating layer such as a ground layer. Such a structure makes it is possible to provide an ultrasonic probe capable of preventing electric leakage from the ultrasonic probe to an object to be examined so as to improve the electric safety and an ultrasonic diagnostic apparatus using the probe.
    • 公开了一种超声波探头,其包括具有多个振动元件的cMUT芯片,其中机电耦合系数或灵敏度根据偏置电压而变化,并且发送和接收超声波,布置在cMUT芯片上方的声透镜,以及布置在 在cMUT芯片之下。 在声透镜的超声波发送/接收表面侧或声透镜和cMUT芯片之间设置漏电防止单元。 防漏电单元可以是例如绝缘层,例如接地层。 通过这样的结构,能够提供能够防止从超声波探头向被检体的漏电以提高电气安全性的超声波探头以及使用该探针的超声波诊断装置。
    • 9. 发明授权
    • Non-volatile memory device
    • 非易失性存储器件
    • US08642988B2
    • 2014-02-04
    • US13588112
    • 2012-08-17
    • Masaharu KinoshitaYoshitaka SasagoTakashi KobayashiHiroyuki Minemura
    • Masaharu KinoshitaYoshitaka SasagoTakashi KobayashiHiroyuki Minemura
    • H01L29/02
    • H01L45/144G11C13/0004G11C2213/71G11C2213/74G11C2213/75G11C2213/78H01L27/2409H01L27/2481H01L45/06
    • A non-volatile memory device includes: a first line extending along a main surface of a substrate; a stack provided above the first line; a second line formed above the stack; a select element provided where the first and second lines intersect, the select element adapted to pass current in a direction perpendicular to the main surface; a second insulator film provided along a side surface of the stack; a channel layer provided along the second insulator film; an adhesion layer provided along the channel layer; and a variable resistance material layer provided along the adhesion layer, wherein the first and second lines are electrically connected via the select element and channel layer, a contact resistance via the adhesion layer between the channel layer and variable resistance material layer is low, and a resistance of the adhesion layer is high with respect to an extending direction of the channel layer.
    • 非易失性存储器件包括:沿衬底的主表面延伸的第一线; 提供在第一行之上的堆栈; 在堆叠之上形成第二线; 设置在所述第一和第二线相交的选择元件,所述选择元件适于在垂直于所述主表面的方向上传递电流; 沿着所述堆叠的侧表面设置的第二绝缘膜; 沿所述第二绝缘膜设置的沟道层; 沿着沟道层提供的粘合层; 以及沿着粘合层设置的可变电阻材料层,其中第一和第二线经由选择元件和沟道层电连接,通过沟道层和可变电阻材料层之间的粘合层的接触电阻低,并且 粘合层的电阻相对于沟道层的延伸方向高。