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1. 发明授权

US08618623B2 Solid-state image pickup device and method for manufacturing same, and image pickup apparatus 有权
标题翻译：固体摄像装置及其制造方法以及摄像装置
公开(公告)号：US08618623B2
公开(公告)日：2013-12-31
申请号：US13149053
申请日：2011-05-31
申请人： Norihiro Kubo , Hiroaki Ishiwata , Sanghoon Ha
发明人： Norihiro Kubo , Hiroaki Ishiwata , Sanghoon Ha
IPC分类号： H01L31/0232 , H01L31/00 , H01L27/14 , H01L31/062 , H01L31/113
CPC分类号： H01L27/1463 , H01L27/14643 , H01L27/14656 , H01L27/14689
摘要： Disclosed herein is a solid-state image pickup device of a type wherein a pixel is configured to include a sensor unit capable of photoelectric conversion, the image pickup device including: a semiconductor substrate; a charge storage region of a first conduction type, which is formed in the semiconductor substrate and constitutes a sensor unit; a charge storage sub-region made of an impurity region of the first conduction type, which is formed, in plural layers, in the semiconductor substrate below the charge storage region serving as a main charge storage region and wherein at least one or more of the plural layers are formed entirely across a pixel; and a device isolation region that is formed in the semiconductor substrate, isolates pixels from one another, and is made of an impurity region of a second conduction type.
摘要翻译：这里公开了一种类型的固态图像拾取装置，其中像素被配置为包括能够进行光电转换的传感器单元，所述图像拾取装置包括：半导体衬底; 形成在半导体衬底中并构成传感器单元的第一导电类型的电荷存储区; 由第一导电类型的杂质区域制成的电荷存储子区域，其形成在用作主电荷存储区域的电荷存储区域下面的半导体衬底中的多层中，并且其中至少一个或多个整个跨越像素形成多个层; 以及形成在半导体衬底中的器件隔离区，将像素彼此隔离，并且由第二导电类型的杂质区域制成。

2. 发明申请

US20110304000A1 SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING SAME, AND IMAGE PICKUP APPARATUS 有权
标题翻译：固态图像拾取装置及其制造方法和图像拾取装置
公开(公告)号：US20110304000A1
公开(公告)日：2011-12-15
申请号：US13149053
申请日：2011-05-31
申请人： Norihiro Kubo , Hiroaki Ishiwata , Sanghoon Ha
发明人： Norihiro Kubo , Hiroaki Ishiwata , Sanghoon Ha
IPC分类号： H01L31/14 , H01L31/0232 , H01L31/18
CPC分类号： H01L27/1463 , H01L27/14643 , H01L27/14656 , H01L27/14689
摘要： Disclosed herein is a solid-state image pickup device of a type wherein a pixel is configured to include a sensor unit capable of photoelectric conversion, the image pickup device including: a semiconductor substrate; a charge storage region of a first conduction type, which is formed in the semiconductor substrate and constitutes a sensor unit; a charge storage sub-region made of an impurity region of the first conduction type, which is formed, in plural layers, in the semiconductor substrate below the charge storage region serving as a main charge storage region and wherein at least one or more of the plural layers are formed entirely across a pixel; and a device isolation region that is formed in the semiconductor substrate, isolates pixels from one another, and is made of an impurity region of a second conduction type.
摘要翻译：这里公开了一种类型的固态图像拾取装置，其中像素被配置为包括能够进行光电转换的传感器单元，所述图像拾取装置包括：半导体基板; 形成在半导体衬底中并构成传感器单元的第一导电类型的电荷存储区; 由第一导电类型的杂质区域制成的电荷存储子区域，其形成在用作主电荷存储区域的电荷存储区域下面的半导体衬底中的多层中，并且其中至少一个或多个整个跨越像素形成多个层; 以及形成在半导体衬底中的器件隔离区，将像素彼此隔离，并且由第二导电类型的杂质区域制成。

3. 发明授权

US08697477B2 Method for production of solid-state imaging element, solid-state imaging element, and imaging apparatus 有权
标题翻译：固体摄像元件，固体摄像元件及成像装置的制造方法
公开(公告)号：US08697477B2
公开(公告)日：2014-04-15
申请号：US13116539
申请日：2011-05-26
申请人： Sanghoon Ha , Hiroaki Ishiwata
发明人： Sanghoon Ha , Hiroaki Ishiwata
IPC分类号： H01L21/00
CPC分类号： H01L27/14806 , H01L27/14616 , H01L27/14643 , H01L27/14689 , H01L31/03529 , H01L31/103 , H01L31/18 , Y02E10/50
摘要： Disclosed herein is a method for producing a solid-state imaging element which has pixels, each including a sensor section that performs photoelectric conversion and a charge transfer section that transfers charges generated by the sensor section. The method includes: forming an impurity region of the first conduction type and a second impurity region of the second conduction type on the impurity region of the first conduction type by ion implantation by using the same mask; forming on the surface of the semiconductor substrate a transfer gate constituting the charge transfer section which extends over the second impurity region of the second conduction type; forming a charge accumulating region of the first conduction type constituting the sensor section by ion implantation; and forming a first impurity region of the second conduction type, which has a higher impurity concentration than the second impurity region of the second conduction type, by ion implantation.
摘要翻译：本发明公开了一种具有像素的固体摄像元件的制造方法，每个像素包括执行光电转换的传感器部分和传送由传感器部分产生的电荷的电荷转移部分。该方法包括：通过使用相同的掩模通过离子注入在第一导电类型的杂质区上形成第一导电类型的杂质区和第二导电类型的第二杂质区; 在所述半导体衬底的表面上形成构成所述电荷转移部的传输门，所述电荷转移部在所述第二导电类型的所述第二杂质区上延伸; 通过离子注入形成构成传感器部分的第一导电类型的电荷累积区域; 并且通过离子注入形成具有比第二导电类型的第二杂质区更高的杂质浓度的第二导电类型的第一杂质区。

4. 发明申请

US20100321616A1 IMAGING DEVICE, ELECTRIC CHARGE READOUT METHOD, AND IMAGING APPARATUS 失效
标题翻译：成像装置，电费读出方法和成像装置
公开(公告)号：US20100321616A1
公开(公告)日：2010-12-23
申请号：US12794351
申请日：2010-06-04
申请人： Sanghoon Ha , Hiroaki Ishiwata
发明人： Sanghoon Ha , Hiroaki Ishiwata
IPC分类号： G02F1/1335 , G01R19/00
CPC分类号： H04N9/045 , H01L27/14603 , H01L27/14621 , H01L27/14645 , H01L27/14685 , H01L27/14689 , H04N2209/046
摘要： An imaging device includes: first green pixels; and second green pixels adjacent to the respective first green pixels in a first direction, which is the direction in which electric charge accumulated in the pixels is read, wherein the dimension of the first and second green pixels in a second direction perpendicular to the first direction is twice the dimension of the first and second green pixels in the first direction.
摘要翻译：成像装置包括：第一绿色像素; 以及与第一方向相邻的第二绿色像素，其中第一方向是读取在像素中累积的电荷的方向，其中第一和第二绿色像素在垂直于第一方向的第二方向上的尺寸是第一方向上的第一和第二绿色像素的尺寸的两倍。

5. 发明授权

US08786740B2 Imaging device, electric charge readout method, and imaging apparatus 失效
标题翻译：成像装置，电荷读出方法和成像装置
公开(公告)号：US08786740B2
公开(公告)日：2014-07-22
申请号：US12794351
申请日：2010-06-04
申请人： Sanghoon Ha , Hiroaki Ishiwata
发明人： Sanghoon Ha , Hiroaki Ishiwata
IPC分类号： H04N3/14
CPC分类号： H04N9/045 , H01L27/14603 , H01L27/14621 , H01L27/14645 , H01L27/14685 , H01L27/14689 , H04N2209/046
摘要： An imaging device includes: first green pixels; and second green pixels adjacent to the respective first green pixels in a first direction, which is the direction in which electric charge accumulated in the pixels is read, wherein the dimension of the first and second green pixels in a second direction perpendicular to the first direction is twice the dimension of the first and second green pixels in the first direction.
摘要翻译：成像装置包括：第一绿色像素; 以及与第一方向相邻的第二绿色像素，其中第一方向是读取在像素中累积的电荷的方向，其中第一和第二绿色像素在垂直于第一方向的第二方向上的尺寸是第一方向上的第一和第二绿色像素的尺寸的两倍。

6. 发明授权

US08446498B2 Solid-state imaging device, manufacturing method thereof, and camera with alternately arranged pixel combinations 有权
标题翻译：固态成像装置及其制造方法以及具有交替排列的像素组合的照相机
公开(公告)号：US08446498B2
公开(公告)日：2013-05-21
申请号：US12834571
申请日：2010-07-12
申请人： Hiroaki Ishiwata , Sanghoon Ha
发明人： Hiroaki Ishiwata , Sanghoon Ha
IPC分类号： H04N5/335 , H04N3/14 , H04N9/04 , H01L31/0232
CPC分类号： H01L27/14621 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/14625 , H01L27/14627 , H01L27/14645 , H01L27/14685 , H04N5/374 , H04N5/3745 , H04N5/378 , H04N9/045 , H04N2209/045
摘要： A solid-state imaging device includes: photodiodes formed for pixels arranged on a light sensing surface of a semiconductor substrate; a signal reading unit formed on the semiconductor substrate to read a signal charge or a voltage; an insulating film formed on the semiconductor substrate and including optical waveguides; color filters formed on the insulating film; and on-chip lenses formed on the color filters. The first and second pixel combinations are alternately arranged both in the horizontal and vertical directions, the first pixel combination having a layout in which two green pixels are arranged both in the horizontal and vertical directions and a total of four pixels are arranged, the second pixel combination having a layout in which two pixels are arranged both in the horizontal and vertical directions, a total of four pixels are arranged, and two red pixels and two blue pixels are arranged cater cornered.
摘要翻译：固态成像装置包括：形成用于设置在半导体衬底的感光表面上的像素的光电二极管; 信号读取单元，形成在所述半导体基板上以读取信号电荷或电压; 形成在半导体衬底上并包括光波导的绝缘膜; 在绝缘膜上形成滤色片; 以及形成在滤色片上的片上透镜。第一和第二像素组合在水平和垂直方向上交替地布置，第一像素组合具有在水平和垂直方向上布置两个绿色像素的布局，并且布置总共四个像素，第二像素具有两个像素在水平和垂直方向上布置的布局的组合，总共排列了四个像素，并且两个红色像素和两个蓝色像素被布置。

7. 发明申请

US20110298078A1 METHOD FOR PRODUCTION OF SOLID-STATE IMAGING ELEMENT, SOLID-STATE IMAGING ELEMENT, AND IMAGING APPARATUS 有权
标题翻译：固态成像元件，固态成像元件和成像装置的制造方法
公开(公告)号：US20110298078A1
公开(公告)日：2011-12-08
申请号：US13116539
申请日：2011-05-26
申请人： Sanghoon Ha , Hiroaki Ishiwata
发明人： Sanghoon Ha , Hiroaki Ishiwata
IPC分类号： H01L31/02
CPC分类号： H01L27/14806 , H01L27/14616 , H01L27/14643 , H01L27/14689 , H01L31/03529 , H01L31/103 , H01L31/18 , Y02E10/50
摘要： Disclosed herein is a method for producing a solid-state imaging element which has pixels, each including a sensor section that performs photoelectric conversion and a charge transfer section that transfers charges generated by the sensor section. The method includes: forming an impurity region of the first conduction type and a second impurity region of the second conduction type on the impurity region of the first conduction type by ion implantation by using the same mask; forming on the surface of the semiconductor substrate a transfer gate constituting the charge transfer section which extends over the second impurity region of the second conduction type; forming a charge accumulating region of the first conduction type constituting the sensor section by ion implantation; and forming a first impurity region of the second conduction type, which has a higher impurity concentration than the second impurity region of the second conduction type, by ion implantation.
摘要翻译：本发明公开了一种具有像素的固体摄像元件的制造方法，每个像素包括执行光电转换的传感器部分和传送由传感器部分产生的电荷的电荷转移部分。该方法包括：通过使用相同的掩模通过离子注入在第一导电类型的杂质区上形成第一导电类型的杂质区和第二导电类型的第二杂质区; 在所述半导体衬底的表面上形成构成所述电荷转移部的传输门，所述电荷转移部在所述第二导电类型的所述第二杂质区上延伸; 通过离子注入形成构成传感器部分的第一导电类型的电荷累积区域; 以及通过离子注入形成具有比第二导电类型的第二杂质区更高的杂质浓度的第二导电类型的第一杂质区。

8. 发明授权

US11343451B2 Solid-state imaging device, method of driving the same, and electronic apparatus 有权
公开(公告)号：US11343451B2
公开(公告)日：2022-05-24
申请号：US16849843
申请日：2020-04-15
申请人： Hiroaki Ishiwata , Hideo Kido , Norihiro Kubo , Tetsuya Uchida
发明人： Hiroaki Ishiwata , Hideo Kido , Norihiro Kubo , Tetsuya Uchida
IPC分类号： H04N5/369 , H04N5/3745 , H01L27/146 , H04N5/347
摘要： A solid-state imaging device includes a pixel array unit in which a plurality of imaging pixels configured to generate an image, and a plurality of phase difference detection pixels configured to perform phase difference detection are arranged, each of the plurality of phase difference detection pixels including a plurality of photoelectric conversion units, a plurality of floating diffusions configured to convert charges stored in the plurality of photoelectric conversion units into voltage, and a plurality of amplification transistors configured to amplify the converted voltage in the plurality of floating diffusions.

9. 发明申请

US20200369371A1 SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING THE SAME, AND ELECTRONIC APPARATUS 审中-公开
公开(公告)号：US20200369371A1
公开(公告)日：2020-11-26
申请号：US16849843
申请日：2020-04-15
申请人： Hiroaki Ishiwata , Hideo Kido , Norihiro Kubo , Tetsuya Uchida
发明人： Hiroaki Ishiwata , Hideo Kido , Norihiro Kubo , Tetsuya Uchida
IPC分类号： B64C11/46 , B64C11/00 , B64C27/08 , B64C27/20 , B64C29/00
摘要： A solid-state imaging device includes a pixel array unit in which a plurality of imaging pixels configured to generate an image, and a plurality of phase difference detection pixels configured to perform phase difference detection are arranged, each of the plurality of phase difference detection pixels including a plurality of photoelectric conversion units, a plurality of floating diffusions configured to convert charges stored in the plurality of photoelectric conversion units into voltage, and a plurality of amplification transistors configured to amplify the converted voltage in the plurality of floating diffusions.

10. 发明授权

US06521925B1 Solid-state image sensor 有权
标题翻译：固态图像传感器
公开(公告)号：US06521925B1
公开(公告)日：2003-02-18
申请号：US09537745
申请日：2000-03-30
申请人： Akiko Mori , Hisanori Ihara , Tetsuya Yamaguchi , Hiroaki Ishiwata , Hidetoshi Nozaki
发明人： Akiko Mori , Hisanori Ihara , Tetsuya Yamaguchi , Hiroaki Ishiwata , Hidetoshi Nozaki
IPC分类号： H01L31062
CPC分类号： H01L29/0847 , H01L27/14603 , H01L27/14609 , H01L27/14643 , H01L27/14654 , H01L31/0352
摘要： A solid-state image sensor comprises a photodiode which is provided in a p-type substrate or a p-type well and composed of a first n-type region for storing photoelectrically converted signal charges, a gate electrode provided above the substrate or well so as to be adjacent to one end of the photodiode, and a n-type drain provided at the surface of the substrate or well opposite to the photodiode, with the gate electrode interviewing therebetween. There is provided a second n-type region which is formed so as to be in contact with the upper part of the first n-type region on the gate electrode side and one end of which is formed to self-align with one end of the gate electrode to be part of the photodiode. This construction prevents the short-channel effect of the signal read transistor section and reduces or eradicates the left-over signal charges stored in the photodiode, thereby reducing noise and improving the sensitivity of the sensor.
摘要翻译：固态图像传感器包括设置在p型衬底或p型阱中并由用于存储光电转换的信号电荷的第一n型区域，设置在衬底或阱上方的栅电极组成的光电二极管，与光电二极管的一端相邻，以及设置在基板的表面或与光电二极管相对的阱的n型漏极，门电极与其间进行访问。提供了第二n型区域，其形成为与栅极电极侧上的第一n型区域的上部接触，并且其一端形成为与第一n型区域的一端自对准栅电极成为光电二极管的一部分。这种结构防止信号读取晶体管部分的短沟道效应，并且减少或消除存储在光电二极管中的剩余信号电荷，从而降低噪声并提高传感器的灵敏度。

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