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1. 发明授权

US06878645B2 Method for manufacturing silicon wafer 有权
标题翻译：硅晶片制造方法
公开(公告)号：US06878645B2
公开(公告)日：2005-04-12
申请号：US10332576
申请日：2001-07-06
申请人： Norihiro Kobayashi , Shoji Akiyama , Masaro Tamatsuka , Masaru Shinomiya , Yuichi Matsumoto
发明人： Norihiro Kobayashi , Shoji Akiyama , Masaro Tamatsuka , Masaru Shinomiya , Yuichi Matsumoto
IPC分类号： H01L21/205 , H01L21/322 , H01L21/324 , H01L21/26 , H01L21/42 , H01L21/477
CPC分类号： H01L21/3247 , H01L21/3225 , H01L21/324
摘要： Provided is a process for manufacturing a silicon wafer employing heat treatment which is applied on the silicon wafer in inert gas atmosphere represented by Ar annealing to annihilate Grown-in defects in a surface layer region of the silicon wafer as well as to cause no degradation of haze and micro-roughness on a surface thereof. In a process for manufacturing a silicon wafer having a step of heat treating the silicon wafer in inert gas atmosphere, using a purge box with which the silicon wafer heat treated in the inert gas atmosphere can be unloaded to outside a reaction tube of a heat treatment furnace without being put into contact with the open air, the purge box is filled with mixed gas of nitrogen and oxygen or 100% oxygen gas, and the heat treated silicon wafer is unloaded into the purge box.
摘要翻译：提供一种使用热处理制造硅晶片的方法，该硅晶片在由Ar退火表示的惰性气体气氛中施加在硅晶片上，以消除硅晶片的表面层区域中的生长缺陷，并且不会导致在其表面上的雾度和微观粗糙度。在制造具有在惰性气体气氛中对硅晶片进行热处理的步骤的硅晶片的制造方法中，使用在惰性气体气氛中进行了热处理的硅晶片能够在热处理反应管外排出的清洗箱在不与露天接触的情况下，将氮气和氧气或100％氧气的混合气体充满净化箱，将热处理后的硅晶片卸载到净化箱中。

2. 发明授权

US06413310B1 Method for producing silicon single crystal wafer and silicon single crystal wafer 失效
标题翻译：硅单晶晶片和硅单晶晶片的制造方法
公开(公告)号：US06413310B1
公开(公告)日：2002-07-02
申请号：US09529869
申请日：2000-04-20
申请人： Masaro Tamatsuka , Norihiro Kobayashi , Shoji Akiyama , Masaru Shinomiya
发明人： Masaro Tamatsuka , Norihiro Kobayashi , Shoji Akiyama , Masaru Shinomiya
IPC分类号： C21D100
CPC分类号： C30B29/06 , C30B33/02 , H01L21/3225 , Y10S117/906 , Y10T428/12674
摘要： Silicon single crystal wafers for semiconductor devices of high quality are obtained with high productivity by effectively reducing or eliminating grown-in defects in surface layers of silicon single crystal wafers produced by the CZ method. The present invention provides a method for producing a silicon single crystal wafer, which comprises growing a silicon single crystal ingot by the Czochralski method, slicing the single crystal ingot into a wafer, subjecting the wafer to a heat treatment at a temperature of 1100-1300° C. for 1 minute or more under a non-oxidative atmosphere, and successively subjecting the wafer to a heat treatment at a temperature of 700-1300° C. for 1 minute or more under an oxidative atmosphere without cooling the wafer to a temperature lower than 700° C. The present invention also provides a CZ silicon single crystal wafer, wherein density of COPs having a size of 0.09 &mgr;m or more in a surface layer having a thickness of up to 5 &mgr;m from a surface is 1.3 COPs/cm2 or less, and density of COPs having a size of 0.09 &mgr;m or more in a bulk portion other than the surface layer is larger than the density of COPs of the surface layer.
摘要翻译：通过有效地减少或消除由CZ方法生产的硅单晶晶片的表面层中的生长缺陷，以高生产率获得高质量的半导体器件的硅单晶晶片。本发明提供了一种硅单晶晶片的制造方法，其包括通过切克劳斯基法（Czochralski method）生长硅单晶锭，将单晶锭切割成晶片，使晶片在1100-1300℃的温度下进行热处理在非氧化性气氛下保持1分钟以上，并且在氧化气氛下依次使晶片在700-1300℃的温度下进行1分钟以上的热处理，而不将晶片冷却至温度本发明还提供了一种CZ硅单晶晶片，其中表面层中具有0.09μm或更大的厚度的COP的密度从表面至多为5μm的浓度为1.3个COPs / cm 2 在表面层以外的本体部分中，具有0.09μm以上的尺寸的COP的密度大于表层的COP的密度。

3. 发明授权

US07011717B2 Method for heat treatment of silicon wafers and silicon wafer 有权
标题翻译：硅晶片和硅晶片的热处理方法
公开(公告)号：US07011717B2
公开(公告)日：2006-03-14
申请号：US10929480
申请日：2004-08-31
申请人： Norihiro Kobayashi , Shoji Akiyama , Yuuichi Matsumoto , Masaro Tamatsuka
发明人： Norihiro Kobayashi , Shoji Akiyama , Yuuichi Matsumoto , Masaro Tamatsuka
IPC分类号： H01L31/036
CPC分类号： H01L21/3225 , Y10S438/913 , Y10S438/935 , Y10S438/955 , Y10S438/974
摘要： According to the present invention, there are provided a method for heat treatment of silicon wafers wherein a silicon wafer is subjected to a heat treatment at a temperature of from 1000° C. to the melting point of silicon in an inert gas atmosphere, and temperature decreasing in the heat treatment is performed in an atmosphere containing 1–60% by volume of hydrogen, a method for heat treatment of silicon wafers under a reducing atmosphere containing hydrogen by using a rapid heating and rapid cooling apparatus, wherein temperature decreasing rate from the maximum temperature in the heat treatment to 700° C. is controlled to be 20° C./sec or less, and a silicon wafer which has a crystal defect density of 1.0×104 defects/cm3 or more in a wafer bulk portion, a crystal defect density of 1.0×104 defects/cm3 or less in a wafer surface layer of a depth of 0.5 μm from the surface, a crystal defect density of 0.15 defects/cm2 or less on a wafer surface and surface roughness of 1.0 nm or less in terms of the P-V value. By these, crystal defects in wafer surface layers can be reduced by a simple method with a small amount of hydrogen used without degrading microroughness of wafers.
摘要翻译：根据本发明，提供了一种硅晶片的热处理方法，其中硅晶片在惰性气体气氛中在1000℃至硅熔点下进行热处理，温度热处理的降低在含有1-60体积％的氢气的气氛中进行，通过使用快速加热和快速冷却装置在含氢气的还原气氛下热处理硅晶片的方法，其中从控制到700℃的热处理的最高温度为20℃/秒以下，晶体缺陷密度为1.0×4×4×缺陷/ cm 2的硅晶片在晶片本体部分中> 3 <或更多，在深度的晶片表面层中的晶体缺陷密度为1.0×4×4×3/3或更小 0.5μm以下的晶体缺陷密度为0.15个/ cm 2以下在P-V值方面为1.0nm以下的表面粗糙度。通过这些，可以通过使用少量氢气的简单方法来降低晶片表面层中的晶体缺陷，而不降低晶片的微观粗糙度。

4. 发明授权

US06670261B2 Production method for annealed wafer 有权
标题翻译：退火晶圆的生产方法
公开(公告)号：US06670261B2
公开(公告)日：2003-12-30
申请号：US09979717
申请日：2001-11-28
申请人： Shoji Akiyama , Norihiro Kobayashi , Masaro Tamatsuka , Takatoshi Nagoya
发明人： Shoji Akiyama , Norihiro Kobayashi , Masaro Tamatsuka , Takatoshi Nagoya
IPC分类号： H01L21425
CPC分类号： H01L21/324 , H01L21/02052 , H01L21/3225 , Y10S438/906
摘要： There is provided a manufacturing process for an annealed wafer capable of reducing boron contamination occurring while annealing is performed in a state where a wafer surface after cleaning is exposed to a gas in Ar atmosphere to suppress a change in resistivity due to an increase in a boron concentration in the vicinity of the wafer surface after annealing and manufacture an annealed wafer in which a difference in a boron concentration between a surface layer portion thereof and a bulk portion thereof is essentially not a problem even if a silicon wafer having a comparative low boron concentration (1×1016 atoms/cm3 or less) is used as the annealed wafer. The manufacturing process for an annealed wafer comprises: cleaning a silicon wafer; and loading the silicon wafer into a heat treatment furnace to heat-treat the silicon wafer in an Ar atmosphere, wherein an aqueous solution including hydrofluoric acid is used as a final cleaning liquid in the cleaning.
摘要翻译：提供了一种用于退火晶片的制造方法，其能够在将清洁后的晶片表面暴露于Ar气氛中的气体的状态下进行退火的同时进行退火，以抑制由于硼的增加导致的电阻率变化退火后的晶片表面附近的浓度，制造退火晶片，其中表面层部分和其主体部分之间的硼浓度差异基本上不成问题，即使具有比较低的硼浓度的硅晶片（1×10 16原子/ cm 3以下）用作退火晶片。退火晶片的制造方法包括：清洗硅晶片; 并将硅晶片加载到热处理炉中以在Ar气氛中对硅晶片进行加热处理，其中使用包含氢氟酸的水溶液作为清洗中的最终清洗液。

5. 发明申请

US20050025691A1 Method for heat treatment of silicon wafers and silicon wafer 有权
标题翻译：硅晶片和硅晶片的热处理方法
公开(公告)号：US20050025691A1
公开(公告)日：2005-02-03
申请号：US10929480
申请日：2004-08-31
申请人： Norihiro Kobayashi , Shoji Akiyama , Yuuichi Matsumoto , Masaro Tamatsuka
发明人： Norihiro Kobayashi , Shoji Akiyama , Yuuichi Matsumoto , Masaro Tamatsuka
IPC分类号： H01L21/322 , C01B33/02
CPC分类号： H01L21/3225 , Y10S438/913 , Y10S438/935 , Y10S438/955 , Y10S438/974
摘要： According to the present invention, there are provided a method for heat treatment of silicon wafers wherein a silicon wafer is subjected to a heat treatment at a temperature of from 1000° C. to the melting point of silicon in an inert gas atmosphere, and temperature decreasing in the heat treatment is performed in an atmosphere containing 1-60% by volume of hydrogen, a method for heat treatment of silicon wafers under a reducing atmosphere containing hydrogen by using a rapid heating and rapid cooling apparatus, wherein temperature decreasing rate from the maximum temperature in the heat treatment to 700° C. is controlled to be 20° C./sec or less, and a silicon wafer which has a crystal defect density of 1.0×104 defects/cm3 or more in a wafer bulk portion, a crystal defect density of 1.0×104 defects/cm3 or less in a wafer surface layer of a depth of 0.5 μm from the surface, a crystal defect density of 0.15 defects/cm2 or less on a wafer surface and surface roughness of 1.0 nm or less in terms of the P-V value. By these, crystal defects in wafer surface layers can be reduced by a simple method with a small amount of hydrogen used without degrading microroughness of wafers.
摘要翻译：根据本发明，提供了一种硅晶片的热处理方法，其中硅晶片在惰性气体气氛中在1000℃至硅熔点下进行热处理，温度热处理的降低在含有1-60体积％的氢气的气氛中进行，通过使用快速加热和快速冷却装置在含氢气的还原气氛下热处理硅晶片的方法，其中从在700℃的热处理中的最高温度被控制在20℃/秒以下，并且在a的情况下，晶体缺陷密度为1.0×10 4缺陷/ cm 3以上的硅晶片晶片本体部分，表面0.5μm深的晶片表面层中的晶体缺陷密度为1.0×10 4缺陷/ cm 3或更小，晶体缺陷密度为0.15缺陷/ cm 2或较少在晶圆表面和表面粗糙度1 在P-V值方面为0.0nm以下。通过这些，可以通过使用少量氢气的简单方法来降低晶片表面层中的晶体缺陷，而不降低晶片的微观粗糙度。

6. 发明授权

US06809015B2 Method for heat treatment of silicon wafers and silicon wafer 有权
标题翻译：硅晶片和硅晶片的热处理方法
公开(公告)号：US06809015B2
公开(公告)日：2004-10-26
申请号：US10338726
申请日：2003-01-09
申请人： Norihiro Kobayashi , Shoji Akiyama , Yuuichi Matsumoto , Masaro Tamatsuka
发明人： Norihiro Kobayashi , Shoji Akiyama , Yuuichi Matsumoto , Masaro Tamatsuka
IPC分类号： H01L2124
CPC分类号： H01L21/3225 , Y10S438/913 , Y10S438/935 , Y10S438/955 , Y10S438/974
摘要： According to the present invention, there are provided a method for heat treatment of silicon wafers wherein a silicon wafer is subjected to a heat treatment at a temperature of from 1000° C. to the melting point of silicon in an inert gas atmosphere, and temperature decreasing in the heat treatment is performed in an atmosphere containing 1-60% by volume of hydrogen, a method for heat treatment of silicon wafers under a reducing atmosphere containing hydrogen by using a rapid heating and rapid cooling apparatus, wherein temperature decreasing rate from the maximum temperature in the heat treatment to 700° C. is controlled to be 20° C./sec or less, and a silicon wafer which has a crystal defect density of 1.0×104 defects/cm3 or more in a wafer bulk portion, a crystal defect density of 1.0×104 defects/cm3 or less in a wafer surface layer of a depth of 0.5 &mgr;m from the surface, a crystal defect density of 0.15 defects/cm2 or less on a wafer surface and surface roughness of 1.0 nm or less in terms of the P-V value. By these, crystal defects in wafer surface layers can be reduced by a simple method with a small amount of hydrogen used without degrading microroughness of wafers.
摘要翻译：根据本发明，提供了一种硅晶片的热处理方法，其中硅晶片在惰性气体气氛中在1000℃至硅熔点下进行热处理，温度热处理的降低在含有1-60体积％的氢气的气氛中进行，通过使用快速加热和快速冷却装置在含氢气的还原气氛下热处理硅晶片的方法，其中从在700℃的热处理中的最高温度被控制在20℃/秒以下，并且在a的情况下，晶体缺陷密度为1.0×10 4缺陷/ cm 3以上的硅晶片晶片本体部分，表面0.5μm深的晶片表面层中的晶体缺陷密度为1.0×10 4缺陷/ cm 3或更小，晶体缺陷密度为0.15缺陷/ cm 2或较少在晶圆表面和表面粗糙度1 在P-V值方面为0.0nm以下。通过这些，可以通过使用少量氢气的简单方法来降低晶片表面层中的晶体缺陷，而不降低晶片的微观粗糙度。

7. 发明授权

US06573159B1 Method for thermally annealing silicon wafer and silicon wafer 有权
标题翻译：硅晶片和硅晶片的热退火方法
公开(公告)号：US06573159B1
公开(公告)日：2003-06-03
申请号：US09622203
申请日：2000-08-14
申请人： Norihiro Kobayashi , Shoji Akiyama , Yuuichi Matsumoto , Masaro Tamatsuka
发明人： Norihiro Kobayashi , Shoji Akiyama , Yuuichi Matsumoto , Masaro Tamatsuka
IPC分类号： H01L2124
CPC分类号： H01L21/3225 , Y10S438/913 , Y10S438/935 , Y10S438/955 , Y10S438/974
摘要： According to the present invention, there are provided a method for heat treatment of silicon wafers wherein a silicon wafer is subjected to a heat treatment at a temperature of from 1000° C. to the melting point of silicon in an inert gas atmosphere, and temperature decreasing in the heat treatment is performed in an atmosphere containing 1-60% by volume of hydrogen, a method for heat treatment of silicon wafers under a reducing atmosphere containing hydrogen by using a rapid heating and rapid cooling apparatus, wherein temperature decreasing rate from the maximum temperature in the heat treatment to 700° C. is controlled to be 20° C./sec or less, and a silicon wafer which has a crystal defect density of 1.0×104 defects/cm3 or more in a wafer bulk portion, a crystal defect density of 1.0×104 defects/cm3 or less in a wafer surface layer of a depth of 0.5 &mgr;m from the surface, a crystal defect density of 0.15 defects/cm2 or less on a wafer surface and surface roughness of 1.0 nm or less in terms of the P-V value. By these, crystal defects in wafer surface layers can be reduced by a simple method with a small amount of hydrogen used without degrading microroughness of wafers.
摘要翻译：根据本发明，提供了一种硅晶片的热处理方法，其中硅晶片在惰性气体气氛中在1000℃至硅熔点下进行热处理，温度热处理的降低在含有1-60体积％的氢气的气氛中进行，通过使用快速加热和快速冷却装置在含氢气的还原气氛下热处理硅晶片的方法，其中从控制到700℃的热处理的最高温度为20℃/秒以下，在晶片本体部分中的晶体缺陷密度为1.0×10 4个/ cm 3以上的硅晶片，晶体表面0.5μm深的晶片表面层的缺陷密度为1.0×10 4个/ cm3以下，晶片表面的晶体缺陷密度为0.15个/ cm 2以下，表面粗糙度为1.0nm或l 在P-V值方面。通过这些，可以通过使用少量氢气的简单方法来降低晶片表面层中的晶体缺陷，而不降低晶片的微观粗糙度。

8. 发明授权

US06680260B2 Method of producing a bonded wafer and the bonded wafer 失效
标题翻译：制造接合晶片和接合晶片的方法
公开(公告)号：US06680260B2
公开(公告)日：2004-01-20
申请号：US10244412
申请日：2002-09-17
申请人： Shoji Akiyama , Masaro Tamatsuka
发明人： Shoji Akiyama , Masaro Tamatsuka
IPC分类号： H01L2131
CPC分类号： H01L21/76251
摘要： There is provided a method of producing a bonded SOI wafer wherein a silicon single crystal ingot is grown according to Czochralski method, the single crystal ingot is then sliced to produce a silicon single crystal wafer, the silicon single crystal wafer is subjected to heat treatment in a non-oxidizing atmosphere at a temperature of 1100° C. to 1300° C. for one minute or more and continuously to a heat treatment in an oxidizing atmosphere at a temperature of 700° C. to 1300° C. for one minute or more without cooling the wafer to a temperature less than 700° C. to provide a silicon single crystal wafer wherein a silicon oxide film is formed on the surface, and the resultant wafer is used as the bond wafer, and a bonded SOI wafer produced by the method. There can be provided a SOI wafer that has a SOI layer having few crystal defects, good surface roughness and high quality in high productivity, in high yield and with low cost.
摘要翻译：提供一种制造按照Czochralski法生长硅单晶锭的接合SOI晶片的方法，然后将单晶锭切片以制造硅单晶晶片，将硅单晶晶片进行热处理在1100℃〜1300℃的温度下进行1分钟以上的非氧化性气氛，并在700℃〜1300℃的温度下在氧化气氛中持续热处理1分钟，或更没有将晶片冷却到低于700℃的温度，以提供其中在表面上形成氧化硅膜的硅单晶晶片，并且将所得晶片用作接合晶片，以及通过以下方式制造的键合SOI晶片：方法。可以提供SOI晶片，其SOI结晶缺陷少，表面粗糙度高，生产率高，成品率高，成本低。

9. 发明授权

US06492682B1 Method of producing a bonded wafer and the bonded wafer 失效
标题翻译：制造接合晶片和接合晶片的方法
公开(公告)号：US06492682B1
公开(公告)日：2002-12-10
申请号：US09830389
申请日：2001-04-26
申请人： Shoji Akiyama , Masaro Tamatsuka
发明人： Shoji Akiyama , Masaro Tamatsuka
IPC分类号： H01L2701
CPC分类号： H01L21/76251
摘要： There is provided a method of producing a bonded SOI wafer wherein a silicon single crystal ingot is grown according to Czochralski method, the single crystal ingot is then sliced to produce a silicon single crystal wafer, the silicon single crystal wafer is subjected to heat treatment in a non-oxidizing atmosphere at a temperature of 1100° C. to 1300° C. for one minute or more and continuously to a heat treatment in an oxidizing atmosphere at a temperature of 700° C. to 1300° C. for one minute or more without cooling the wafer to a temperature less than 700° C. to provide a silicon single crystal wafer wherein a silicon oxide film is formed on the surface, and the resultant wafer is used as the bond wafer, and a bonded SOI wafer produced by the method. There can be provided a SOI wafer that has a SOI layer having few crystal defects, good surface roughness and high quality in high productivity, in high yield and with low cost.
摘要翻译：提供了根据切克劳斯基法生长硅单晶锭的接合SOI晶片的制造方法，然后将单晶锭切片以制造硅单晶晶片，对硅单晶晶片进行热处理在1100℃〜1300℃的温度下进行1分钟以上的非氧化性气氛，并在700℃〜1300℃的温度下在氧化气氛中持续热处理1分钟，或更没有将晶片冷却到低于700℃的温度，以提供其中在表面上形成氧化硅膜的硅单晶晶片，并且将所得晶片用作接合晶片，以及通过以下方式制造的键合SOI晶片：方法。可以提供SOI晶片，其SOI结晶缺陷少，表面粗糙度高，生产率高，成品率高，成本低。

10. 发明授权

US06806199B2 Method for manufacturing silicon mirror wafer, silicon mirror wafer, and heat treatment furnace 失效
标题翻译：硅镜片，硅镜片和热处理炉的制造方法
公开(公告)号：US06806199B2
公开(公告)日：2004-10-19
申请号：US09979084
申请日：2001-11-16
申请人： Norihiro Kobayashi , Shoji Akiyama
发明人： Norihiro Kobayashi , Shoji Akiyama
IPC分类号： H01L21302
CPC分类号： H01L21/3247 , C30B29/06 , C30B33/00
摘要： There are provided a manufacturing process for a mirror finished silicon wafer capable of manufacturing a mirror finished silicon wafer, having an excellent quality in which grown-in crystal defects are annihilated by heat-treating the silicon mirror finished wafer in a heat treatment in a gas atmosphere of high safety at a lower cost without selection of a heat treatment furnace for use in the heat treatment, a mirror finished silicon wafer having an excellent quality, and a heat treatment furnace preferably used in the manufacturing process. In the manufacturing process for a mirror finished silicon wafer comprising the steps of: connecting a reaction tube of a heat treatment furnace to a supply line for a non-oxidative raw material gas via a connection portion; supplying a non-oxidative gas into the reaction tube through the supply line and the connection portion; and heat-treating the mirror finished silicon wafer in the heat treatment furnace in an atmosphere of a non-oxidative gas, wherein a content of impurities in the non-oxidative gas supplied into the reaction tube is 3 ppm or less.
摘要翻译：提供了一种用于制造镜面成品硅晶片的镜面成品硅晶片的制造方法，其具有通过在气体的热处理中热处理硅镜成品晶片而消除生长的晶体缺陷的优良品质没有选择用于热处理的热处理炉，具有优异品质的镜面成品硅晶片，以及优选在制造过程中使用的热处理炉，成本较低的高安全性气氛。在镜面成型硅晶片的制造工序中，包括以下步骤：经由连接部将热处理炉的反应管与非氧化性原料气体的供给管连接; 通过供应管线和连接部分将非氧化性气体供应到反应管中; 在非氧化性气体气氛中，在热处理炉中对镜面成品硅片进行热处理，其中供给反应管的非氧化性气体中的杂质含量为3ppm以下。

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