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    • 2. 发明授权
    • Photomask and pattern forming method used in a thermal flow process and semiconductor integrated circuit fabricated using the thermal flow process
    • 用于热流程的光掩模和图案形成方法以及使用热流程制造的半导体集成电路
    • US06864021B2
    • 2005-03-08
    • US10341160
    • 2003-01-13
    • Haruo IwasakiShinji IshidaTsuyoshi Yoshii
    • Haruo IwasakiShinji IshidaTsuyoshi Yoshii
    • G03F1/00G03F1/68G03F1/70G03F7/20G03F7/40H01L21/027H01L21/28H01L21/311G03F9/00
    • G03F7/40G03F1/00H01L21/31144
    • The invention relates to a photomask for use in a thermal flow process in which: a photomask is prepared in which a plurality of exposure openings are formed; a resist is applied to the surface of a layer of a semiconductor integrated circuit that is to undergo processing; this resist is patterned by an exposure process through the photomask to form a plurality of openings in the resist that correspond to each of the exposure openings; and the patterned resist is then heated to cause each of the openings to shrink; wherein at least a portion of exposure openings among the plurality of exposure openings are formed in shapes that compensate for anisotropic deformation that occurs in the openings when the patterned resist is heated to cause each of the openings to shrink. Since the openings that are formed in the resist are provided in advance with shapes that compensate for the deformation that occurs when the openings shrink, these openings attain the proper shape after undergoing shrinking and deformation.
    • 本发明涉及一种用于热流程的光掩模,其中:准备形成多个曝光孔的光掩模; 将抗蚀剂施加到要进行处理的半导体集成电路的层的表面上; 该抗蚀剂通过曝光工艺通过光掩模进行图案化以在抗蚀剂中形成与每个曝光开口相对应的多个开口; 然后加热图案化的抗蚀剂以使每个开口收缩; 其中所述多个曝光开口中的所述曝光开口的至少一部分形成为补偿当所述图案化抗蚀剂被加热以使每个所述开口收缩时在所述开口中发生的各向异性变形的形状。 由于在抗蚀剂中形成的开口预先设置有补偿当开口收缩时发生的变形的形状,所以这些开口在经历收缩和变形之后达到适当的形状。
    • 3. 发明授权
    • Photomask and pattern forming method used in a thermal flow process and semiconductor integrated circuit fabricated using the thermal flow process
    • 用于热流程的光掩模和图案形成方法以及使用热流程制造的半导体集成电路
    • US06566041B2
    • 2003-05-20
    • US09757841
    • 2001-01-10
    • Haruo IwasakiShinji IshidaTsuyoshi Yoshii
    • Haruo IwasakiShinji IshidaTsuyoshi Yoshii
    • G03F740
    • G03F7/40G03F1/00H01L21/31144
    • The invention relates to a photomask for use in a thermal flow process in which: a photomask is prepared in which a plurality of exposure openings are formed; a resist is applied to the surface of a layer of a semiconductor integrated circuit that is to undergo processing; this resist is patterned by an exposure process through the photomask to form a plurality of openings in the resist that correspond to each of the exposure openings; and the patterned resist is then heated to cause each of the openings to shrink; wherein at least a portion of exposure openings among the plurality of exposure openings are formed in shapes that compensate for anisotropic deformation that occurs in the openings when the patterned resist is heated to cause each of the openings to shrink. Since the openings that are formed in the resist are provided in advance with shapes that compensate for the deformation that occurs when the openings shrink, these openings attain the proper shape after undergoing shrinking and deformation.
    • 本发明涉及一种用于热流程的光掩模,其中:准备形成多个曝光孔的光掩模; 将抗蚀剂施加到要进行处理的半导体集成电路的层的表面上; 该抗蚀剂通过曝光工艺通过光掩模进行图案化以在抗蚀剂中形成与每个曝光开口相对应的多个开口; 然后加热图案化的抗蚀剂以使每个开口收缩; 其中所述多个曝光开口中的所述曝光开口的至少一部分形成为补偿当所述图案化抗蚀剂被加热以使每个所述开口收缩时在所述开口中发生的各向异性变形的形状。 由于在抗蚀剂中形成的开口预先设置有补偿当开口收缩时发生的变形的形状,所以这些开口在经历收缩和变形之后达到适当的形状。
    • 8. 发明授权
    • Method for forming a pattern on a chemical sensitization photoresist
    • 在化学增感光致抗蚀剂上形成图案的方法
    • US06210868B1
    • 2001-04-03
    • US09187855
    • 1998-11-06
    • Tsuyoshi Yoshii
    • Tsuyoshi Yoshii
    • G03F740
    • G03F7/40Y10S430/146
    • A method for forming a fine pattern on a chemical sensitization photoresist includes the consecutive steps of exposing a photoresist film with KrF excimer laser, developing the exposed photoresist film to form a photoresist pattern, separating protective group from the photoresist pattern, and heating the photoresist film to make the photoresist pattern to have a swelling property, thereby reshaping the openings in the photoresist pattern while reducing the size of the openings. The method achieves a finer pattern in a design rule of 0.30 to 0.18 &mgr;m without degradation of the shape.
    • 用于在化学增感光致抗蚀剂上形成精细图案的方法包括用KrF准分子激光器曝光光致抗蚀剂膜的步骤,显影曝光的光致抗蚀剂膜以形成光刻胶图案,将保护基与光致抗蚀剂图案分离,以及加热光致抗蚀剂膜 以使光致抗蚀剂图案具有溶胀特性,从而在减小开口尺寸的同时重塑光致抗蚀剂图案中的开口。 该方法在0.30至0.18μm的设计规则中实现更细的图案,而不会使形状退化。