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1. 发明申请

US20060105175A1 Near-infrared shield and display front plate 失效
标题翻译：近红外线屏蔽和显示屏前面板
公开(公告)号：US20060105175A1
公开(公告)日：2006-05-18
申请号：US11280344
申请日：2005-11-17
申请人： Noriaki Otani , Yuji Yamashita , Teruhisa Miyata , Tetsuya Taki
发明人： Noriaki Otani , Yuji Yamashita , Teruhisa Miyata , Tetsuya Taki
IPC分类号： F21V9/04 , B32B9/04
CPC分类号： H01J11/44 , G02B5/282 , H01J11/10 , H01J2211/448 , Y10T428/31504
摘要： A near-infrared shield according to the present invention includes a base and a near-infrared absorption layer disposed on one main surface of the base. When the near-infrared shield is irradiated from the near-infrared absorption layer side with xenon light having a wavelength of 380 nm to 1200 nm at an illuminance of 60 W/m2 (an energy density in a range of 300 nm to 400 nm) for 16 hours under a condition of BPT of 63° C. and a relative humidity of 50%, chromaticity changes Δx, Δy of transmitted light, which are shown in a chromaticity diagram of a CIE1931XYZ color system, are 0.005 or less respectively. The near-infrared shield has an excellent near-infrared shielding property and an excellent light resistance, and its near-infrared absorptivity does not deteriorate even after long-term storage.
摘要翻译：根据本发明的近红外屏蔽包括设置在基座的一个主表面上的基座和近红外线吸收层。当从近红外线吸收层侧照射具有380nm至1200nm波长的氙灯的近红外屏蔽以60W / m 2的照度（a 范围为300nm至400nm）在BPT为63℃，相对湿度为50％的条件下，色度变化为Deltax，透射光的Deltay，CIE1931XYZ色彩系统的色度图中示出了16小时分别为0.005以下。近红外线屏蔽具有优异的近红外屏蔽性和优异的耐光性，并且其近红外吸收性即使在长期储存后也不会劣化。

2. 发明授权

US07662490B2 Near-infrared shield and display front plate 失效
标题翻译：近红外线屏蔽和显示屏前面板
公开(公告)号：US07662490B2
公开(公告)日：2010-02-16
申请号：US11280344
申请日：2005-11-17
申请人： Noriaki Otani , Yuji Yamashita , Teruhisa Miyata , Tetsuya Taki
发明人： Noriaki Otani , Yuji Yamashita , Teruhisa Miyata , Tetsuya Taki
IPC分类号： B32B9/00 , G03C1/735
CPC分类号： H01J11/44 , G02B5/282 , H01J11/10 , H01J2211/448 , Y10T428/31504
摘要： A near-infrared shield according to the present invention includes a base and a near-infrared absorption layer disposed on one main surface of the base. When the near-infrared shield is irradiated from the near-infrared absorption layer side with xenon light having a wavelength of 380 nm to 1200 nm at an illuminance of 60 W/m2 (an energy density in a range of 300 nm to 400 nm) for 16 hours under a condition of BPT of 63° C. and a relative humidity of 50%, chromaticity changes Δx, Δy of transmitted light, which are shown in a chromaticity diagram of a CIE1931XYZ color system, are 0.005 or less respectively. The near-infrared shield has an excellent near-infrared shielding property and an excellent light resistance, and its near-infrared absorptivity does not deteriorate even after long-term storage.
摘要翻译：根据本发明的近红外屏蔽包括设置在基座的一个主表面上的基座和近红外线吸收层。当以60W / m 2的照度（能量密度为300nm〜400nm）的波长为380nm〜1200nm的氙光从近红外线吸收层侧照射近红外线屏蔽时，在BPT为63℃，相对湿度为50％的条件下，在CIE1931XYZ色系的色度图中示出的色度变化Δttax，透射光的Deltay分别为0.005以下，16小时。近红外线屏蔽具有优异的近红外屏蔽性和优异的耐光性，并且其近红外吸收性即使在长期储存后也不会劣化。

3. 发明授权

US09123528B2 Composite substrate, semiconductor chip having a composite substrate and method for producing composite substrates and semiconductor chips 有权
标题翻译：复合基板，具有复合基板的半导体芯片以及复合基板和半导体芯片的制造方法
公开(公告)号：US09123528B2
公开(公告)日：2015-09-01
申请号：US13883730
申请日：2011-12-16
申请人： Johannes Baur , Berthold Hahn , Karl Engl , Ann-Kathrin Haerle , Jakob Johannes Haerle , Johanna Magdalena Haerle , Joachim Hertkorn , Tetsuya Taki
发明人： Johannes Baur , Berthold Hahn , Karl Engl , Volker Haerle , Joachim Hertkorn , Tetsuya Taki
IPC分类号： H01L29/02 , H01L21/78 , H01L21/02 , H01L33/00 , H01L33/08
CPC分类号： H01L33/32 , H01L21/02612 , H01L21/78 , H01L24/73 , H01L29/02 , H01L33/0079 , H01L33/08 , H01L33/46 , H01L33/507 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2224/73265 , H01L2924/00012 , H01L2924/00014
摘要： A composite substrate has a carrier and a utility layer. The utility layer is attached to the carrier by means of a dielectric bonding layer and the carrier contains a radiation conversion material. Other embodiments relate to a semiconductor chip having such a composite substrate, a method for producing a composite substrate and a method for producing a semiconductor chip with a composite substrate.
摘要翻译：复合衬底具有载体和效用层。实用层通过介电粘合层附着到载体上，载体包含辐射转换材料。其他实施方式涉及具有这种复合基板的半导体芯片，复合基板的制造方法以及具有复合基板的半导体芯片的制造方法。

4. 发明申请

US20110316028A1 Optoelectronic Semiconductor Component 有权
标题翻译：光电半导体元件
公开(公告)号：US20110316028A1
公开(公告)日：2011-12-29
申请号：US13124707
申请日：2009-09-16
申请人： Martin Strassburg , Lutz Hoeppel , Matthias Peter , Ulrich Zehnder , Tetsuya Taki , Andreas Leber , Rainer Butendeich , Thomas Bauer
发明人： Martin Strassburg , Lutz Hoeppel , Matthias Peter , Ulrich Zehnder , Tetsuya Taki , Andreas Leber , Rainer Butendeich , Thomas Bauer
IPC分类号： H01L33/60
CPC分类号： H01L33/40 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor component comprising a semiconductor layer sequence (3) based on a nitride compound semiconductor and containing an n-doped region (4), a p-doped region (8) and an active zone (5) arranged between the n-doped region (4) and the p-doped region (8) is specified. The p-doped region (8) comprises a p-type contact layer (7) composed of InxAlyGa1-x-yN where 0≦x≦1, 0≦y≦1 and x+y≦1. The p-type contact layer (7) adjoins a connection layer (9) composed of a metal, a metal alloy or a transparent conductive oxide, wherein the p-type contact layer (7) has first domains (1) having a Ga-face orientation and second domains (2) having an N-face orientation at an interface with the connection layer (9).
摘要翻译：一种光电子半导体部件，包括基于氮化物化合物半导体的半导体层序列（3），并且包含n掺杂区域（4），p掺杂区域（8）和有源区域（5）区域（4）和p掺杂区域（8）。 p掺杂区域（8）包括由In x Al y Ga 1-x-y N组成的p型接触层（7），其中0和nlE; x和nlE; 1,0和nlE; y和nlE; 1和x + y和nlE; 1。 p型接触层（7）与由金属，金属合金或透明导电氧化物构成的连接层（9）相邻，其中p型接触层（7）具有第一畴（1）面取向和在与连接层（9）的界面处具有N面取向的第二域（2）。

5. 发明授权

US07190001B2 GaN based semiconductor light emitting device and method of making the same 失效
标题翻译： GaN基半导体发光器件及其制造方法
公开(公告)号：US07190001B2
公开(公告)日：2007-03-13
申请号：US10926398
申请日：2004-08-26
申请人： Tetsuya Taki
发明人： Tetsuya Taki
IPC分类号： H01L27/15
CPC分类号： H01L33/32 , H01L33/18 , H01L33/24
摘要： A GaN based semiconductor light emitting device has: an active layer disposed between an n-type layer and a p-type layer; and a polycrystalline nitride based semiconductor uneven layer disposed between the n-type layer and the active layer. The active layer is formed uneven according to the uneven form of the polycrystalline nitride based semiconductor uneven layer.
摘要翻译： GaN基半导体发光器件具有：设置在n型层和p型层之间的有源层; 以及设置在n型层和有源层之间的多晶氮化物基半导体不均匀层。有源层根据多晶氮化物基半导体不均匀层的不均匀形状而形成为不均匀的。

6. 发明申请

US20050076828A1 Process for fabrication of III nitride-based compound semiconductors 审中-公开
标题翻译：制备III族氮化物基化合物半导体的方法
公开(公告)号：US20050076828A1
公开(公告)日：2005-04-14
申请号：US10924260
申请日：2004-08-24
申请人： Tetsuya Taki , Yasuhisa Ushida , Kazuki Nishijima
发明人： Tetsuya Taki , Yasuhisa Ushida , Kazuki Nishijima
IPC分类号： C30B23/00 , C30B25/00 , C30B25/02 , C30B25/14 , C30B28/12 , C30B28/14 , C30B29/40 , H01L21/205 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/32 , H01L33/40
CPC分类号： C30B29/40 , C30B25/02 , C30B25/14
摘要： A process for the fabrication of a III nitride-based compound semiconductor includes a first crystal growth step for growing a semiconductor layer A made of a III nitride-based compound semiconductor on a crystal growth surface, and a second crystal growth step for growing a semiconductor layer B made of a III nitride-based compound semiconductor on the semiconductor layer A in which a lateral crystal growth rate of the semiconductor layer A in the first crystal growth step is lower than a lateral crystal growth rate of the semiconductor layer B in the second crystal growth step.
摘要翻译：一种用于制造III族氮化物基化合物半导体的方法包括用于在晶体生长表面上生长由III族氮化物基化合物半导体制成的半导体层A的第一晶体生长步骤和用于生长半导体的第二晶体生长步骤在第一晶体生长步骤中半导体层A的横向晶体生长速率低于第二晶体生长步骤中的半导体层B的横向晶体生长速率的半导体层A上由III族氮化物基化合物半导体制成的层B 晶体生长步骤。

7. 发明授权

US09373747B2 Method for producing an optoelectronic component 有权
标题翻译：光电子元件的制造方法
公开(公告)号：US09373747B2
公开(公告)日：2016-06-21
申请号：US14344573
申请日：2012-09-12
申请人： Joachim Hertkorn , Tetsuya Taki , Karl Engl , Johannes Baur , Berthold Hahn , Volker Haerle , Ann-Kathrin Haerle , Jakob Johannes Haerle , Johanna Magdalena Haerle
发明人： Joachim Hertkorn , Tetsuya Taki , Karl Engl , Johannes Baur , Berthold Hahn , Volker Haerle
IPC分类号： H01L33/00 , H01L21/762 , H01L33/06 , H01L33/12 , H01L33/32
CPC分类号： H01L33/0079 , H01L21/76254 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/32
摘要： A method for producing an optoelectronic component is provided. A transfer layer, containing InxGa1-xN with 0 x, is grown onto the previously grown transfer layer, ions are implanted into the further transfer layer to form a separation zone, a further carrier substrate is applied, and the further transfer layer is separated by way of heat treatment. Subsequently, a semiconductor layer sequence, containing an active layer, is grown onto the surface of the further transfer layer facing away from the further carrier substrate.
摘要翻译：提供了一种制造光电子元件的方法。将含有0 x的InyGa1-yN的另一转印层生长到预先生长的转印层上，将离子注入到另外的转印层中以形成分离区，施加另外的载体衬底，并且通过热处理分离进一步的转印层。随后，将含有活性层的半导体层序列生长到背离另外的载体衬底的另一转印层的表面上。

8. 发明授权

US09012885B2 Light-emitting semiconductor chip 有权
标题翻译：发光半导体芯片
公开(公告)号：US09012885B2
公开(公告)日：2015-04-21
申请号：US13518809
申请日：2010-12-27
申请人： Matthias Peter , Tobias Meyer , Alexander Walter , Tetsuya Taki , Juergen Off , Rainer Butendeich , Joachim Hertkorn
发明人： Matthias Peter , Tobias Meyer , Alexander Walter , Tetsuya Taki , Juergen Off , Rainer Butendeich , Joachim Hertkorn
IPC分类号： H01L29/06 , H01L33/14 , H01L33/04 , H01L33/06 , H01L33/22 , H01L33/38
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/04 , H01L33/14 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/382 , H01L2224/16225 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.
摘要翻译：半导体芯片包括具有半导体层序列的半导体本体。用于产生辐射的有源区域布置在n导电多层结构和p导电半导体层之间。掺杂分布形成在包括至少一个掺杂峰的n导电多层结构中。

9. 发明申请

US20120298964A1 Light-Emitting Semiconductor Chip 有权
标题翻译：发光半导体芯片
公开(公告)号：US20120298964A1
公开(公告)日：2012-11-29
申请号：US13518809
申请日：2010-12-27
申请人： Matthias Peter , Tobias Meyer , Alexander Walter , Tetsuya Taki , Juergen Off , Rainer Butendeich , Joachim Hertkorn
发明人： Matthias Peter , Tobias Meyer , Alexander Walter , Tetsuya Taki , Juergen Off , Rainer Butendeich , Joachim Hertkorn
IPC分类号： H01L29/15 , H01L29/06
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/04 , H01L33/14 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/382 , H01L2224/16225 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.
摘要翻译：半导体芯片包括具有半导体层序列的半导体本体。用于产生辐射的有源区域布置在n导电多层结构和p导电半导体层之间。掺杂分布形成在包括至少一个掺杂峰的n导电多层结构中。

10. 发明申请

US20070241353A1 Group III intride semiconductor light emitting element 有权
标题翻译： III族包覆半导体发光元件
公开(公告)号：US20070241353A1
公开(公告)日：2007-10-18
申请号：US11783110
申请日：2007-04-05
申请人： Tetsuya Taki
发明人： Tetsuya Taki
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/34333
摘要： A group III nitride semiconductor light emitting element, comprising having a light emitting layer with a multiquantum well structure formed of a group III nitride semiconductor. The light emitting layer has plural well layers, and the plural well layers are formed to coincide in emission wavelength with each other.
摘要翻译：一种III族氮化物半导体发光元件，包括具有由III族氮化物半导体形成的多量子阱结构的发光层。发光层具有多个阱层，并且多个阱层形成为发射波长彼此一致。

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