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    • 3. 发明授权
    • Plasma addressed liquid crystal display device and method for fabricating the same
    • 等离子体寻址液晶显示装置及其制造方法
    • US06577356B2
    • 2003-06-10
    • US09730743
    • 2000-12-07
    • Noriaki OnishiAya Miyazaki
    • Noriaki OnishiAya Miyazaki
    • G02F1133
    • G02F1/13334G02F1/1337G02F2201/086
    • The liquid crystal display (LCD) device of the invention includes: a substrate; a dielectric layer; a liquid crystal layer sandwiched by the substrate and the dielectric layer; a plurality of stripe-shaped electrodes formed on a surface of the substrate facing the liquid crystal layer to extend in parallel with a first direction; and a plurality of stripe-shaped plasma channels formed to face the plurality of electrodes with the liquid crystal layer and the dielectric layer therebetween to extend in parallel with a second direction different from the first direction. The dielectric layer or an alignment layer formed on a surface of the dielectric layer facing the liquid crystal layer selectively attenuates ultraviolet rays emitted from the plasma channels.
    • 本发明的液晶显示(LCD)装置包括:基板; 电介质层; 夹在基板和电介质层之间的液晶层; 多个条形电极,形成在所述基板的面向所述液晶层的表面上,以与第一方向平行地延伸; 以及多个条形等离子体通道,其形成为与液晶层和介电层面对多个电极,以与第一方向不同的第二方向平行延伸。 形成在面向液晶层的电介质层的表面上的介电层或取向层选择性地衰减从等离子体通道发射的紫外线。
    • 6. 发明授权
    • Verification method for nonvolatile semiconductor memory device
    • 非易失性半导体存储器件的验证方法
    • US07760552B2
    • 2010-07-20
    • US11729216
    • 2007-03-28
    • Hiroyuki MiyakeMitsuaki OsameAya Miyazaki
    • Hiroyuki MiyakeMitsuaki OsameAya Miyazaki
    • G11C11/34
    • G11C16/3436G11C16/26
    • The present invention provides nonvolatile semiconductor memory devices which operate with low power consumption. In a nonvolatile semiconductor memory device, a plurality of nonvolatile memory elements are connected in series. The plurality of nonvolatile memory elements include a semiconductor layer including a channel forming region and a control gate provided to overlap with the channel forming region. Operations of write, erase, a first read, and a second read in a verify operation of data to the nonvolatile memory elements, are conducted by changing voltage to the control gates of the nonvolatile memory elements. The second read in the verify operation after erase operation is conducted by changing only one of a potential of the control gate of a nonvolatile memory element which are selected from the plurality of nonvolatile memory elements, and as the potential, a potential different from a potential of the first read is used.
    • 本发明提供了以低功耗工作的非易失性半导体存储器件。 在非易失性半导体存储器件中,多个非易失性存储器元件串联连接。 多个非易失性存储元件包括包括沟道形成区域的半导体层和设置成与沟道形成区域重叠的控制栅极。 通过将电压改变为非易失性存储器元件的控制栅极来进行对非易失性存储器元件的数据的验证操作的写入,擦除,第一读取和第二次读取操作。 在擦除操作之后的验证操作中的第二次读取是通过仅改变从多个非易失性存储元件中选择的非易失性存储元件的控制栅极的电位中的一个,并且作为电势,与电位不同的电位 的第一次读取被使用。
    • 8. 发明授权
    • Liquid crystal display device and method for producing the same
    • 液晶显示装置及其制造方法
    • US5644371A
    • 1997-07-01
    • US434487
    • 1995-05-04
    • Mitsuhiro KodenAya MiyazakiTokihiko Shinomiya
    • Mitsuhiro KodenAya MiyazakiTokihiko Shinomiya
    • G02F1/1335G02F1/1339G02F1/141
    • G02F1/141G02F1/13394
    • A liquid crystal display device includes a ferroelectric liquid crystal layer. The ferroelectric liquid crystal molecules have pretilt directions defined by first direction vectors obtained by orthogonally projecting first imaginary vectors to each surface of a pair of substrates. The first imaginary vectors are parallel to the liquid crystal molecules in the ferroelectric liquid crystal layer in the vicinity of the substrates and directed away from each surface of the pair of substrates toward a center portion of the ferroelectric liquid crystal layer in its thickness direction. The ferroelectric liquid crystal layer has a chevron layered structure. A bending direction of the smectic layers is the same direction as the first direction vector obtained by orthogonally projecting a second imaginary vector to the substrates. The second imaginary vector is parallel to the smectic layers and is included in the same plane with the first imaginary vector and is directed away from the substrates toward the center of the ferroelectric liquid crystal layer. Walls made of insulating non-liquid crystal material are formed between the pair of substrates in a direction perpendicular to the surfaces of the pair of substrates and a light-shielding film is formed on either one of the substrates so that light does not pass through portions of the ferroelectric liquid crystal in a vicinity of a downstream side of the walls along the pretilt direction.
    • 液晶显示装置包括铁电液晶层。 铁电液晶分子具有通过将第一虚数向量正交地投影到一对基板的每个表面而获得的第一方向向量限定的预倾斜方向。 第一虚数矢量与基板附近的铁电液晶层中的液晶分子平行,并且在一对基板的各表面朝着铁电液晶层的厚度方向的中心部分。 铁电液晶层具有V形层状结构。 近晶层的弯曲方向与通过将第二假想矢量正交地投影到基板而获得的第一方向矢量相同。 第二假想矢量与近晶层平行,并且与第一假想矢量包含在同一平面中,并且朝向铁电液晶层的中心远离衬底。 由绝缘非液晶材料构成的壁在垂直于一对基板的表面的方向上形成在一对基板之间,并且在任一个基板上形成遮光膜,使得光不通过部分 的铁电液晶沿着预倾斜方向在壁的下游侧附近。
    • 9. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07737442B2
    • 2010-06-15
    • US11474933
    • 2006-06-27
    • Shunpei YamazakiMasayuki SakakuraAya Miyazaki
    • Shunpei YamazakiMasayuki SakakuraAya Miyazaki
    • H01L27/146
    • H01L29/42384H01L27/124H01L27/1288H01L29/78621H01L2924/0002H01L2924/00
    • A semiconductor device of the present invention has a first conductive layer, a second conductive layer, an insulating layer which is formed between the first conductive layer and the second conductive layer and which has a contact hole, and a third conductive layer which is connected to the first conductive layer and the second conductive layer and of which at least a part of an end portion is formed inside the contact hole. Near a contact hole where the second conductive layer is connected to the third conductive layer, the third conductive layer does not overlap with the second conductive layer with the first insulating layer interposed therebetween and an end portion of the third conductive layer is not formed over the first insulating layer. This allows suppression of depression and projection of the third conductive layer.
    • 本发明的半导体器件具有:第一导电层,第二导电层,形成在第一导电层和第二导电层之间并具有接触孔的绝缘层;以及第三导电层,其与 第一导电层和第二导电层,并且其中至少一部分端部形成在接触孔内。 在第二导电层连接到第三导电层的接触孔附近,第三导电层不与第二导电层重叠,其中第一绝缘层被插入,并且第三导电层的端部不形成在 第一绝缘层。 这允许抑制第三导电层的凹陷和投影。
    • 10. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20080073647A1
    • 2008-03-27
    • US11898749
    • 2007-09-14
    • Ryo ArasawaAya MiyazakiShigeharu MonoeShunpei Yamazaki
    • Ryo ArasawaAya MiyazakiShigeharu MonoeShunpei Yamazaki
    • H01L29/04H01L29/786
    • H01L27/1266H01L27/124H01L29/78603H01L29/78606
    • An object is to provide a semiconductor device in which damages of an element such as a transistor are reduced even when physical force such as bending is externally applied to generate stress in the semiconductor device. A semiconductor device includes a semiconductor film including a channel formation region and an impurity region, which is provided over a substrate, a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween, a first interlayer insulating film provided to cover the first conductive film, a second conductive film provided over the first interlayer insulating film so as to overlap with at least part of the impurity region, a second interlayer insulating film provided over the second conductive film, and a third conductive film provided over the second interlayer insulating film so as to be electrically connected to the impurity region through an opening.
    • 本发明的目的是提供一种半导体器件,其中即使当外部施加诸如弯曲的物理力在半导体器件中产生应力时,诸如晶体管的元件的损伤也减小。 半导体器件包括:设置在基板上的沟道形成区域和杂质区域的半导体膜,设置在沟道形成区域上的栅极绝缘膜之间的第一导电膜,设置成覆盖的第一层间绝缘膜 所述第一导电膜,设置在所述第一层间绝缘膜上以与所述杂质区的至少一部分重叠的第二导电膜,设置在所述第二导电膜上的第二层间绝缘膜,以及设置在所述第二导电膜上的第二导电膜 层间绝缘膜,以通过开口与杂质区电连接。