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    • 3. 发明申请
    • Metal halide lamp
    • 金卤灯
    • US20060145625A1
    • 2006-07-06
    • US10536704
    • 2004-09-06
    • Nobuyoshi TakeuchiYoshiharu Nishiura
    • Nobuyoshi TakeuchiYoshiharu Nishiura
    • H01J17/16H01J61/30H01J17/20
    • H01J61/827H01J61/302
    • A metal halide lamp has an arc tube that includes: a pair of electrode structures, each of which has an electrode at a tip; a main tube part made of polycrystalline alumina ceramic, and containing a discharge space in which the electrodes of the electrode structures are located to oppose each other; and a pair of thin tube parts that connect from the main tube part and are sealed by respective sealing members with the electrode structures inserted therein, where 20≦WL≦50, EL/Di≧2.0, and 0.5≦G≦5.0 are satisfied where tube wall loading of the arc tube is WL(W/cm2), a distance between the electrodes is EL(mm), an inner diameter of the main tube part is Di (mm), and a crystal grain diameter of the polycrystalline alumina ceramic is G(μm)
    • 金属卤化物灯具有电弧管,其包括:一对电极结构,每个电极结构具有尖端的电极; 由多晶氧化铝陶瓷制成的主管部分,并且包含其中电极结构的电极彼此相对的放电空间; 以及一对细管部分,其从主管部分连接并且由插入其中的电极结构的相应的密封构件密封,其中20 <= WL <= 50,EL / Di> = 2.0和0.5 <= G < = 5.0,其中电弧管的管壁负载为WL(W / cm 2),电极之间的距离为EL(mm),主管部分的内径为Di mm),多晶氧化铝陶瓷的晶粒直径为G(mum)
    • 8. 发明授权
    • Metal halide lamp with improved lumen value maintenance
    • 具有改善流明值维护的金属卤化物灯
    • US07057350B2
    • 2006-06-06
    • US10839804
    • 2004-05-05
    • Stefaan M. LambrechtsNobuyoshi TakeuchiJakob Maya
    • Stefaan M. LambrechtsNobuyoshi TakeuchiJakob Maya
    • H01J17/20
    • H01J61/827H01J61/125H01J61/302
    • An arc discharge metal halide lamp having a discharge chamber having visible light permeable walls bounding a discharge region supported electrodes in a discharge region spaced apart by a distance Le with an average interior diameter equal to D so they have a selected ratio with D exceeding a minimum value. Ionizable materials are provided in this chamber involving a noble gas, one or more halides, and mercury in an amount sufficiently small so as to result in a relatively low maximum voltage drop between the electrodes during lamp operation for a lamp dissipation sufficient to have the chamber wall loading exceed a minimum value or so as to maintain chamber luminosity above a minimum value for a selected operational duration.
    • 一种电弧放电金属卤化物灯,其具有放电室,该放电室具有将平均内径等于D的间隔开距离为L的放电区域中的放电区域支撑的电极限定在其上, D的选择比例超过最小值。 在该室中设置可离子化材料,该惰性气体包含惰性气体,一种或多种卤化物和足够小量的汞,以便在灯操作期间导致电极之间相对较低的最大电压降,足以具有室 壁载荷超过最小值,以便在所选择的操作持续时间内将室内亮度保持在最小值以上。
    • 9. 发明授权
    • Nonvolatile semiconductor device with a verify function
    • 具有验证功能的非易失性半导体器件
    • US6005805A
    • 1999-12-21
    • US731555
    • 1996-10-16
    • Nobuyoshi Takeuchi
    • Nobuyoshi Takeuchi
    • G11C16/34G11C16/06
    • G11C16/3445G11C16/3436G11C16/3459
    • In a nonvolatile semiconductor memory device, flash memory cells are arranged in rows and columns and the individual memory cells 2nk are connected to word lines WLi and bit lines BLi. Further connected to the individual word lines WLi are verify cells 4n that are verified in place of the memory cells 2nk during the verification of the memory cells 2nk. The memory cells 2nk and verify cells 4n are formed into almost the same EEPROM structure having a floating electrode, except that the gate couple ratio of the verify cells 4n are set smaller than that of the gate couple ratio of the memory cells 2nk. Therefore, as long as electrons are injected sufficiently into these two types of cells, the threshold values of the verify cells 4n are always smaller than those of the memory cells 2nk. Consequently, when it is confirmed that the verify cells 4n have been verified, this means that the memory cells have been verified as well.
    • 在非易失性半导体存储器件中,闪存单元以行和列排列,并且各个存储单元2nk连接到字线WLi和位线BLi。 在存储单元2nk的验证期间,进一步连接到各个字线WLi是验证代替存储器单元2nk的单元4n。 存储单元2nk和验证单元4n形成为具有浮置电极的几乎相同的EEPROM结构,除了验证单元4n的栅极耦合比被设置为小于存储单元2nk的栅极耦合比的栅极耦合比。 因此,只要将电子充分地注入到这两种类型的单元中,则验证单元4n的阈值总是小于存储单元2nk的阈值。 因此,当确认验证单元4n已经被验证时,这意味着也已经验证了存储单元。