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1. 发明申请

US20070082493A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20070082493A1
公开(公告)日：2007-04-12
申请号：US11525179
申请日：2006-09-22
申请人： Nobuyasu Nishiyama , Kazuhiro Tomioka , Tokuhisa Ohiwa
发明人： Nobuyasu Nishiyama , Kazuhiro Tomioka , Tokuhisa Ohiwa
IPC分类号： H01L21/311
CPC分类号： H01L21/32136 , H01L21/311 , H01L21/32139 , H01L28/55 , H01L28/65 , H01L29/517 , H01L29/518 , H01L29/78
摘要： A method of manufacturing a semiconductor device, includes forming a sacrifice film on an etching target film, forming an etching mask on the sacrifice film, etching the etching target film using the etching mask as a mask, removing the sacrifice film to allow the etching mask to adhere to the etching target film, and removing the etching mask.
摘要翻译：一种制造半导体器件的方法，包括在蚀刻靶膜上形成牺牲膜，在牺牲膜上形成蚀刻掩模，使用蚀刻掩模作为掩模蚀刻蚀刻目标膜，除去牺牲膜以允许蚀刻掩模粘附到蚀刻目标膜上，并除去蚀刻掩模。

2. 发明授权

US07767582B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07767582B2
公开(公告)日：2010-08-03
申请号：US11525179
申请日：2006-09-22
申请人： Nobuyasu Nishiyama , Kazuhiro Tomioka , Tokuhisa Ohiwa
发明人： Nobuyasu Nishiyama , Kazuhiro Tomioka , Tokuhisa Ohiwa
IPC分类号： H01L21/311
CPC分类号： H01L21/32136 , H01L21/311 , H01L21/32139 , H01L28/55 , H01L28/65 , H01L29/517 , H01L29/518 , H01L29/78
摘要： A method of manufacturing a semiconductor device, includes forming a sacrifice film on an etching target film, forming an etching mask on the sacrifice film, etching the etching target film using the etching mask as a mask, removing the sacrifice film to allow the etching mask to adhere to the etching target film, and removing the etching mask.
摘要翻译：一种制造半导体器件的方法，包括在蚀刻靶膜上形成牺牲膜，在牺牲膜上形成蚀刻掩模，使用蚀刻掩模作为掩模蚀刻蚀刻目标膜，除去牺牲膜以允许蚀刻掩模粘附到蚀刻目标膜上，并除去蚀刻掩模。

3. 发明授权

US08651135B2 Mass flow controller, mass flow controller system, substrate processing device, and gas flow rate adjusting method 失效
标题翻译：质量流量控制器，质量流量控制器系统，基板处理装置和气体流量调节方法
公开(公告)号：US08651135B2
公开(公告)日：2014-02-18
申请号：US13173409
申请日：2011-06-30
申请人： Hideo Eto , Makoto Saito , Nobuyasu Nishiyama
发明人： Hideo Eto , Makoto Saito , Nobuyasu Nishiyama
IPC分类号： F16K31/02
CPC分类号： G05D7/0623 , Y10T137/0368 , Y10T137/7759 , Y10T137/7761 , Y10T137/87314 , Y10T137/87322
摘要： According to one embodiment, a flow rate adjusting unit is disposed on a gas passageway and includes a valve that adjusts the flow rate of a gas and an actuator that controls the displacement amount of the valve. A displacement amount storage unit stores displacement amount information in which a displacement amount of the valve, used when a gas flows into the gas passageway at a flow rate defined according to a process procedure before performing the process procedure, is obtained in advance for each process procedure. A setting circuit acquires the displacement amount corresponding to the process procedure from the displacement amount storage unit, and controls the actuator on the basis of the acquired displacement amount.
摘要翻译：根据一个实施例，流量调节单元设置在气体通道上，并且包括调节气体流量的阀和控制阀的位移量的致动器。位移量存储单元存储位移量信息，其中，在每个处理预先获得在气体流入气体通道期间使用的阀的位移量以根据处理过程之前的处理程序限定的流量的位移量信息程序。设置电路从位移量存储单元获取与处理过程对应的位移量，并基于获取的位移量来控制致动器。

4. 发明申请

US20070262353A1 Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070262353A1
公开(公告)日：2007-11-15
申请号：US11790517
申请日：2007-04-26
申请人： Nobuyasu Nishiyama , Katsunori Yahashi
发明人： Nobuyasu Nishiyama , Katsunori Yahashi
IPC分类号： H01L29/76 , H01L29/745
CPC分类号： H01L29/785 , H01L29/66818 , H01L29/78687
摘要： A semiconductor device according to an embodiment of the present invention includes: a square pole-shaped channel portion made from a first semiconductor layer formed on a substrate, and surrounded with four side faces; a gate electrode formed on a first side face of the channel portion, and a second side face of the channel portion opposite to the first side face through respective gate insulating films; a source region having a conductivity type different from that of the channel portion and being formed on a third side face of the channel portion, the source region including a second semiconductor layer having a lattice constant different from that of the first semiconductor layer and being formed directly on the substrate; and a drain region having a conductivity type different from that of the channel portion and being formed on a fourth side face of the channel portion opposite to the third side face, the drain region including the second semiconductor layer being formed directly on the substrate.
摘要翻译：根据本发明的实施例的半导体器件包括：由形成在衬底上并被四个侧面包围的第一半导体层制成的方形极形沟道部分; 形成在所述沟道部分的第一侧面上的栅极电极和通过各个栅极绝缘膜的所述沟道部分与所述第一侧面相对的第二侧面; 源极区，其具有不同于沟道部分的导电类型并形成在沟道部分的第三侧面上的源极区，源极区包括具有与第一半导体层的晶格常数不同的晶格常数的第二半导体层，并形成直接在基材上; 以及漏极区，其具有与沟道部分不同的导电类型，并且形成在与第三侧面相对的沟道部分的第四侧面上，包括第二半导体层的漏极区域直接形成在衬底上。

5. 发明授权

US08760053B2 Power supply control device, plasma processing device, and plasma processing method 有权
标题翻译：电源控制装置，等离子体处理装置和等离子体处理方法
公开(公告)号：US08760053B2
公开(公告)日：2014-06-24
申请号：US13198356
申请日：2011-08-04
申请人： Hideo Eto , Nobuyasu Nishiyama , Makoto Saito , Keiji Suzuki
发明人： Hideo Eto , Nobuyasu Nishiyama , Makoto Saito , Keiji Suzuki
IPC分类号： H05B31/26 , H03H7/38
CPC分类号： H01J37/32091 , H01J37/32183 , H01J37/32935
摘要： According to one embodiment, a power supply control device of a plasma processing device having a plasma generation unit which generates plasma in a process chamber. The power supply control device includes a radio frequency power supply, a storage unit, and a matching circuit. The radio frequency power supply supplies a power to the plasma generation unit. The storage unit stores matching information including a first matching value, a second process condition, and a third matching value. The first matching value corresponds to process information of a first process condition. The second matching value corresponds to process information of a second process condition. The third matching value corresponds to process information of a transient state where the first process condition is being switched to the second process condition. The matching circuit matches impedances based on the matching information.
摘要翻译：根据一个实施例，一种具有在处理室中产生等离子体的等离子体产生单元的等离子体处理装置的电源控制装置。电源控制装置包括射频电源，存储单元和匹配电路。射频电源为等离子体发生单元供电。存储单元存储包括第一匹配值，第二处理条件和第三匹配值的匹配信息。第一匹配值对应于第一处理条件的处理信息。第二匹配值对应于第二处理条件的处理信息。第三匹配值对应于将第一处理条件切换到第二处理条件的过渡状态的处理信息。匹配电路根据匹配信息匹配阻抗。

6. 发明申请

US20120227830A1 PRESSURE CONTROLLING APPARATUS 有权
标题翻译：压力控制装置
公开(公告)号：US20120227830A1
公开(公告)日：2012-09-13
申请号：US13416349
申请日：2012-03-09
申请人： Hideo Eto , Makoto Saito , Nobuyasu Nishiyama
发明人： Hideo Eto , Makoto Saito , Nobuyasu Nishiyama
IPC分类号： F16K17/00
CPC分类号： H01L21/67253 , G05D16/202 , Y10T137/1624 , Y10T137/7761 , Y10T137/87917 , Y10T137/87925
摘要： According to one embodiment, there is provided pressure controlling apparatus including a detecting unit, an exhaust pipe, a regulating valve, and a pressure controlling unit. The regulating valve includes a valve port, a changing unit, and a slide valve. The valve port is communicated with the exhaust pipe. The changing unit changes a shape of the valve port to a different shape whose center is located near the central axis of the exhaust pipe. The slide valve regulates an opening degree of the valve port changed by the changing unit. The pressure controlling unit controls changing of a shape of the valve port by the changing unit and regulation of an opening degree of the valve port by the slide valve.
摘要翻译：根据一个实施例，提供了一种压力控制装置，包括检测单元，排气管，调节阀和压力控制单元。调节阀包括阀口，更换单元和滑阀。阀口与排气管连通。改变单元将阀口的形状改变成其中心位于排气管的中心轴线附近的不同形状。滑阀调节由改变单元改变的阀口的开度。压力控制单元通过改变单元控制阀口的形状的变化，并且通过滑阀调节阀口的开度。

7. 发明申请

US20120038277A1 POWER SUPPLY CONTROL DEVICE, PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING METHOD 有权
标题翻译：电源控制装置，等离子体处理装置和等离子体处理方法
公开(公告)号：US20120038277A1
公开(公告)日：2012-02-16
申请号：US13198356
申请日：2011-08-04
申请人： Hideo ETO , Nobuyasu Nishiyama , Makoto Saito , Keiji Suzuki
发明人： Hideo ETO , Nobuyasu Nishiyama , Makoto Saito , Keiji Suzuki
IPC分类号： H05B31/02 , H01L21/3065
CPC分类号： H01J37/32091 , H01J37/32183 , H01J37/32935
摘要： According to one embodiment, a power supply control device of a plasma processing device having a plasma generation unit which generates plasma in a process chamber. The power supply control device includes a radio frequency power supply, a storage unit, and a matching circuit. The radio frequency power supply supplies a power to the plasma generation unit. The storage unit stores matching information including a first matching value, a second process condition, and a third matching value. The first matching value corresponds to process information of a first process condition. The second matching value corresponds to process information of a second process condition. The third matching value corresponds to process information of a transient state where the first process condition is being switched to the second process condition. The matching circuit matches impedances based on the matching information.
摘要翻译：根据一个实施例，一种具有在处理室中产生等离子体的等离子体产生单元的等离子体处理装置的电源控制装置。电源控制装置包括射频电源，存储单元和匹配电路。射频电源为等离子体发生单元供电。存储单元存储包括第一匹配值，第二处理条件和第三匹配值的匹配信息。第一匹配值对应于第一处理条件的处理信息。第二匹配值对应于第二处理条件的处理信息。第三匹配值对应于将第一处理条件切换到第二处理条件的过渡状态的处理信息。匹配电路根据匹配信息匹配阻抗。

8. 发明授权

US08036036B2 Semiconductor device and a manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08036036B2
公开(公告)日：2011-10-11
申请号：US12574438
申请日：2009-10-06
申请人： Nobuyasu Nishiyama
发明人： Nobuyasu Nishiyama
IPC分类号： G11C16/04
CPC分类号： H01L27/105 , H01L27/0207 , H01L27/1052 , H01L27/112 , H01L27/11286 , H01L27/115 , H01L27/11524
摘要： A semiconductor device includes at least two adjacent memory cell blocks, each of the memory cell blocks having a plurality of memory cell units, each of memory cell units having a plurality of electrically reprogrammable and erasable memory cells connected in series, a plurality of cell gates for selecting the plurality of memory cells within the two adjacent memory cell blocks, each of the plurality of cell gates being formed with roughly rectangular closed loops or roughly U shaped open loops, each of the loops being connected to a corresponding cell of the memory cells in a corresponding memory cell unit of the plurality of memory cell units within one of the two adjacent memory cell blocks and being connected to a corresponding memory cell of the memory cells in a corresponding memory cell unit of the plurality of memory cell units within the other memory cell block of the two adjacent memory cell blocks and a plurality of pairs of first and second selection gates for selecting the memory cell block, the plurality of cell gates being located between one pair of the first and second selection gates within a corresponding block of the memory cell block.
摘要翻译：半导体器件包括至少两个相邻的存储器单元块，每个存储器单元块具有多个存储单元单元，每个存储单元单元具有串联连接的多个电可重新编程和可擦除存储单元，多个单元门为了选择两个相邻的存储单元块内的多个存储器单元，多个单元栅极中的每一个形成有大致矩形的闭环或大致U形的开环，每个循环连接到存储单元的相应单元在两个相邻存储单元块之一内的多个存储单元单元的相应存储单元单元中，并连接到另一个存储单元块内的多个存储单元单元的相应存储单元单元中的存储单元的对应存储单元两个相邻的存储单元块的存储单元块和用于选择th的多对第一和第二选择门 e个存储器单元块，所述多个单元栅极位于所述存储单元块的对应块内的一对第一和第二选择栅极之间。

9. 发明申请

US20100151645A1 Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20100151645A1
公开(公告)日：2010-06-17
申请号：US12656767
申请日：2010-02-16
申请人： Nobuyasu Nishiyama , Katsunori Yahashi
发明人： Nobuyasu Nishiyama , Katsunori Yahashi
IPC分类号： H01L21/336
CPC分类号： H01L29/785 , H01L29/66818 , H01L29/78687
摘要： A semiconductor device according to an embodiment of the present invention includes: a square pole-shaped channel portion made from a first semiconductor layer formed on a substrate, and surrounded with four side faces; a gate electrode formed on a first side face of the channel portion, and a second side face of the channel portion opposite to the first side face through respective gate insulating films; a source region having a conductivity type different from that of the channel portion and being formed on a third side face of the channel portion, the source region including a second semiconductor layer having a lattice constant different from that of the first semiconductor layer and being formed directly on the substrate; and a drain region having a conductivity type different from that of the channel portion and being formed on a fourth side face of the channel portion opposite to the third side face, the drain region including the second semiconductor layer being formed directly on the substrate.
摘要翻译：根据本发明的实施例的半导体器件包括：由形成在衬底上并被四个侧面包围的第一半导体层制成的方形极形沟道部分; 形成在所述沟道部分的第一侧面上的栅极电极和通过各个栅极绝缘膜的所述沟道部分与所述第一侧面相对的第二侧面; 源极区，其具有不同于沟道部分的导电类型并形成在沟道部分的第三侧面上的源极区，源极区包括具有与第一半导体层的晶格常数不同的晶格常数的第二半导体层，并形成直接在基材上; 以及漏极区，其具有与沟道部分不同的导电类型，并且形成在与第三侧面相对的沟道部分的第四侧面上，包括第二半导体层的漏极区域直接形成在衬底上。

10. 发明申请

US20120000887A1 PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20120000887A1
公开(公告)日：2012-01-05
申请号：US13171990
申请日：2011-06-29
申请人： Hideo Eto , Makoto Saito , Keiji Suzuki , Nobuyasu Nishiyama
发明人： Hideo Eto , Makoto Saito , Keiji Suzuki , Nobuyasu Nishiyama
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： H01J37/321 , H01J37/32183 , H01J37/32935
摘要： According to one embodiment, there is provided a plasma treatment apparatus including an electrode, a first power supply circuit, a plasma generating unit, a second power supply circuit, a sensing unit, and a control unit. The electrode is arranged inside a treatment chamber. On the electrode, a substrate to be treated is placed. The first power supply circuit supplies power to the electrode. The plasma generating unit generates plasma in a space separated from the electrode inside the treatment chamber. The second power supply circuit supplies power to the plasma generating unit. The sensing unit senses a parameter output from the first power supply circuit. The control unit controls power supplied from the second power supply circuit so that the parameter sensed by the sensing unit becomes close to or substantially equal to a target value.
摘要翻译：根据一个实施例，提供了一种等离子体处理装置，其包括电极，第一电源电路，等离子体产生单元，第二电源电路，感测单元和控制单元。电极设置在处理室内。在电极上放置待处理的基板。第一电源电路为电极供电。等离子体生成单元在与处理室内部的电极分离的空间中产生等离子体。第二电源电路向等离子体发生单元供电。感测单元感测从第一电源电路输出的参数。控制单元控制从第二电源电路提供的电力，使得由感测单元感测的参数变得接近或基本上等于目标值。

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