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1. 发明授权

US07462857B2 Memory device including resistance-changing function body 失效
标题翻译：记忆体包括电阻变化功能体
公开(公告)号：US07462857B2
公开(公告)日：2008-12-09
申请号：US10528052
申请日：2003-09-18
申请人： Nobutoshi Arai , Hiroshi Iwata , Seizo Kakimoto
发明人： Nobutoshi Arai , Hiroshi Iwata , Seizo Kakimoto
IPC分类号： H01L29/02
CPC分类号： H01L29/8615 , G11C13/0004 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/10 , H01L45/1206 , H01L45/1226 , H01L45/1233 , H01L45/14 , H01L45/1608 , Y10S438/90
摘要： A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage to between the first electrode and the second electrode. The first substance makes an electrical barrier against the second substance. With this constitution, by applying a specified voltage to between the first electrode and the second electrode, the electrical resistance can be changed depending on a state of the particles made of the second substance. Also, by virtue of a simple structure, a resistance-changing function body of small size is provided with low cost.
摘要翻译：电阻变化功能体包括由第一物质制成的物体，介于第一电极和第二电极之间，以及多个由第二物质制成的颗粒并且布置在物体内，使得第一电极和第二电极之间的电阻在第一电极和第二电极之间施加指定电压之前和之后改变第二电极。第一物质对第二物质产生电阻。利用这种结构，通过在第一电极和第二电极之间施加规定的电压，可以根据由第二物质制成的粒子的状态来改变电阻。另外，由于结构简单，所以以低成本提供小尺寸的电阻变化功能体。

2. 发明授权

US07879704B2 Memory function body, particle forming method therefor and, memory device, semiconductor device, and electronic equipment having the memory function body 有权
标题翻译：记忆功能体及其形成粒子的方法，以及存储器件，半导体器件和具有记忆功能体的电子设备
公开(公告)号：US07879704B2
公开(公告)日：2011-02-01
申请号：US11674529
申请日：2007-02-13
申请人： Nobutoshi Arai , Hiroshi Iwata , Seizo Kakimoto
发明人： Nobutoshi Arai , Hiroshi Iwata , Seizo Kakimoto
IPC分类号： H01L21/425
CPC分类号： B82Y10/00 , H01L21/28273 , H01L29/42332
摘要： A memory function body has a medium interposed between a first conductor (e.g., a conductive substrate) and a second conductor (e.g., an electrode) and consisting of a first material (e.g., silicon oxide or silicon nitride). The medium contains particles. Each particle is covered with a second material (e.g., silver oxide) and formed of a third material (e.g., silver). The second material functions as a barrier against passage of electric charges, and the third material has a function of retaining electric charges. The third material is introduced into the medium by, for example, a negative ion implantation method.
摘要翻译：记忆功能体具有介于第一导体（例如，导电基板）和第二导体（例如电极）之间并由第一材料（例如氧化硅或氮化硅）组成的介质。介质含有颗粒。每个颗粒被第二材料（例如氧化银）覆盖并由第三种材料（例如银）形成。第二材料用作阻止电荷通过的屏障，第三材料具有保持电荷的功能。第三种材料通过例如负离子注入法引入介质中。

3. 发明授权

US07187043B2 Memory function body, particle forming method therefor and, memory device, semiconductor device, and electronic equipment having the memory function body 失效
标题翻译：记忆功能体及其形成粒子的方法，以及存储器件，半导体器件和具有记忆功能体的电子设备
公开(公告)号：US07187043B2
公开(公告)日：2007-03-06
申请号：US10796963
申请日：2004-03-11
申请人： Nobutoshi Arai , Hiroshi Iwata , Seizo Kakimoto
发明人： Nobutoshi Arai , Hiroshi Iwata , Seizo Kakimoto
IPC分类号： H01L21/8238
CPC分类号： B82Y10/00 , H01L21/28273 , H01L29/42332
摘要： A memory function body has a medium interposed between a first conductor (e.g., a conductive substrate) and a second conductor (e.g., an electrode) and consisting of a first material (e.g., silicon oxide or silicon nitride). The medium contains particles. Each particle is covered with a second material (e.g., silver oxide) and formed of a third material (e.g., silver). The second material functions as a barrier against passage of electric charges, and the third material has a function of retaining electric charges. The third material is introduced into the medium by, for example, a negative ion implantation method.
摘要翻译：记忆功能体具有介于第一导体（例如，导电基板）和第二导体（例如电极）之间并由第一材料（例如氧化硅或氮化硅）组成的介质。介质含有颗粒。每个颗粒被第二材料（例如氧化银）覆盖并由第三种材料（例如银）形成。第二材料用作阻止电荷通过的屏障，第三材料具有保持电荷的功能。第三种材料通过例如负离子注入法引入介质中。

4. 发明申请

US20060154432A1 Variable resistance functional body and its manufacturing method 失效
标题翻译：可变电阻功能体及其制造方法
公开(公告)号：US20060154432A1
公开(公告)日：2006-07-13
申请号：US10528052
申请日：2003-09-18
申请人： Nobutoshi Arai , Hiroshi Iwata , Seizo Kakimoto
发明人： Nobutoshi Arai , Hiroshi Iwata , Seizo Kakimoto
IPC分类号： H01L29/768
CPC分类号： H01L29/8615 , G11C13/0004 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/10 , H01L45/1206 , H01L45/1226 , H01L45/1233 , H01L45/14 , H01L45/1608 , Y10S438/90
摘要： A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage to between the first electrode and the second electrode. The first substance makes an electrical barrier against the second substance. With this constitution, by applying a specified voltage to between the first electrode and the second electrode, the electrical resistance can be changed depending on a state of the particles made of the second substance. Also, by virtue of a simple structure, a resistance-changing function body of small size is provided with low cost.
摘要翻译：电阻变化功能体包括由第一物质制成的物体，介于第一电极和第二电极之间，以及多个由第二物质制成的颗粒并且布置在物体内，使得第一电极和第二电极之间的电阻在第一电极和第二电极之间施加指定电压之前和之后改变第二电极。第一物质对第二物质产生电阻。利用这种结构，通过在第一电极和第二电极之间施加规定的电压，可以根据由第二物质制成的粒子的状态来改变电阻。另外，由于结构简单，所以以低成本提供小尺寸的电阻变化功能体。

5. 发明授权

US07074676B2 Memory film, method of manufacturing the memory film, memory element, semiconductor storage device, semiconductor integrated circuit, and portable electronic equipment 失效
标题翻译：存储膜，制造存储膜的方法，存储元件，半导体存储器件，半导体集成电路和便携式电子设备
公开(公告)号：US07074676B2
公开(公告)日：2006-07-11
申请号：US10468738
申请日：2002-02-13
申请人： Hiroshi Iwata , Akihide Shibata , Nobutoshi Arai , Takayuki Ogura , Kouichirou Adachi , Seizo Kakimoto , Yukio Yasuda , Shigeaki Zaima , Akira Sakai
发明人： Hiroshi Iwata , Akihide Shibata , Nobutoshi Arai , Takayuki Ogura , Kouichirou Adachi , Seizo Kakimoto , Yukio Yasuda , Shigeaki Zaima , Akira Sakai
IPC分类号： H01L21/8247 , H01L29/788
CPC分类号： B82Y10/00 , H01L21/28273 , H01L27/115 , H01L29/42332 , Y10S438/962
摘要： A memory film operable at a low voltage and a method of manufacturing the memory film; the method, comprising the steps of forming a first insulation film (112) on a semiconductor substrate (111) forming a first electrode, forming a first conductor film (113) on the first insulation film (112), forming a second insulation film (112B) on the surface of the first conductor film (113), forming a third insulation film containing conductor particulates (114, 115) on the second insulation film (112B), and forming a second conductor film forming a second electrode on the third insulation film.
摘要翻译：以低电压工作的记忆膜和制造该记忆膜的方法; 该方法包括以下步骤：在形成第一电极的半导体衬底（111）上形成第一绝缘膜（112），在第一绝缘膜（112）上形成第一导体膜（113），形成第二绝缘膜（ 112B），在第二绝缘膜（112B）上形成包含导体微粒（114,115）的第三绝缘膜，并在第二绝缘膜（112B）上形成第二导电膜，形成第二电极第三绝缘膜。

6. 发明授权

US07030456B2 Resistance-changing function body, memory element, manufacturing method therefor, memory device, semiconductor device and electronic equipment 失效
标题翻译：电阻变化功能体，存储元件，其制造方法，存储器件，半导体器件和电子设备
公开(公告)号：US07030456B2
公开(公告)日：2006-04-18
申请号：US10797137
申请日：2004-03-11
申请人： Nobutoshi Arai , Hiroshi Iwata , Seizo Kakimoto
发明人： Nobutoshi Arai , Hiroshi Iwata , Seizo Kakimoto
IPC分类号： H01L29/00
CPC分类号： G11C13/0069 , G11C17/16 , G11C2013/009 , G11C2213/71 , H01L27/101 , H01L27/112 , H01L27/11213
摘要： A memory function body 113, which includes a plurality of silver particles 103 covered with silver oxide 104, is interposed between a first electrode 300 and a second electrode 411. A magnitude of a current through the memory function body 113 changes on applying a prescribed voltage between the first electrode 300 and the second electrode 411, and a storage state is discriminated according to the magnitude of the current. The silver particles 103, which capture electric charges, are covered with the silver oxide 104 that serves as a barrier against the passage of electric charges, and therefore, the memory function body 113 can stably retain electric charges at the normal temperature.
摘要翻译：记录功能体113包括被氧化银104覆盖的多个银颗粒103，介于第一电极300和第二电极411之间。通过存储功能体113的电流的大小在第一电极300和第二电极411之间施加规定的电压而变化，并且根据电流的大小区分存储状态。捕获电荷的银颗粒103被作为阻止电荷通过的屏障的氧化银104覆盖，因此，记忆功能体113能够在常温下稳定地保持电荷。

7. 发明授权

US07851777B2 Memory device including resistance-changing function body 有权
标题翻译：记忆体包括电阻变化功能体
公开(公告)号：US07851777B2
公开(公告)日：2010-12-14
申请号：US12271837
申请日：2008-11-14
申请人： Nobutoshi Arai , Hiroshi Iwata , Seizo Kakimoto
发明人： Nobutoshi Arai , Hiroshi Iwata , Seizo Kakimoto
IPC分类号： H01L29/02
CPC分类号： H01L29/8615 , G11C13/0004 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/10 , H01L45/1206 , H01L45/1226 , H01L45/1233 , H01L45/14 , H01L45/1608 , Y10S438/90
摘要： A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage to between the first electrode and the second electrode. The first substance makes an electrical barrier against the second substance. With this constitution, by applying a specified voltage to between the first electrode and the second electrode, the electrical resistance can be changed depending on a state of the particles made of the second substance. Also, by virtue of a simple structure, a resistance-changing function body of small size is provided with low cost.
摘要翻译：电阻变化功能体包括由第一物质制成的物体，介于第一电极和第二电极之间，以及多个由第二物质制成的颗粒并且布置在物体内，使得第一电极和第二电极之间的电阻在第一电极和第二电极之间施加指定电压之前和之后改变第二电极。第一物质对第二物质产生电阻。利用这种结构，通过在第一电极和第二电极之间施加规定的电压，可以根据由第二物质制成的粒子的状态来改变电阻。另外，由于结构简单，所以以低成本提供小尺寸的电阻变化功能体。

8. 发明申请

US20090085025A1 MEMORY DEVICE INCLUDING RESISTANCE-CHANGING FUNCTION BODY 有权
标题翻译：包括电阻变化功能体的存储器件
公开(公告)号：US20090085025A1
公开(公告)日：2009-04-02
申请号：US12271837
申请日：2008-11-14
申请人： Nobutoshi ARAI , Hiroshi Iwata , Seizo Kakimoto
发明人： Nobutoshi ARAI , Hiroshi Iwata , Seizo Kakimoto
IPC分类号： H01L45/00 , H01L21/265
CPC分类号： H01L29/8615 , G11C13/0004 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/10 , H01L45/1206 , H01L45/1226 , H01L45/1233 , H01L45/14 , H01L45/1608 , Y10S438/90
摘要： A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage to between the first electrode and the second electrode. The first substance makes an electrical barrier against the second substance. With this constitution, by applying a specified voltage to between the first electrode and the second electrode, the electrical resistance can be changed depending on a state of the particles made of the second substance. Also, by virtue of a simple structure, a resistance-changing function body of small size is provided with low cost.
摘要翻译：电阻变化功能体包括由第一物质制成的物体，介于第一电极和第二电极之间，以及多个由第二物质制成的颗粒并且布置在物体内，使得第一电极和第二电极之间的电阻在第一电极和第二电极之间施加指定电压之前和之后改变第二电极。第一物质对第二物质产生电阻。利用这种结构，通过在第一电极和第二电极之间施加规定的电压，可以根据由第二物质制成的粒子的状态来改变电阻。另外，由于结构简单，所以以低成本提供小尺寸的电阻变化功能体。

9. 发明授权

US06291861B1 Semiconductor device and method for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06291861B1
公开(公告)日：2001-09-18
申请号：US09345414
申请日：1999-06-30
申请人： Hiroshi Iwata , Seizo Kakimoto , Masayuki Nakano , Kouichiro Adachi
发明人： Hiroshi Iwata , Seizo Kakimoto , Masayuki Nakano , Kouichiro Adachi
IPC分类号： H01L21336
CPC分类号： H01L29/66772 , H01L21/2257 , H01L27/088 , H01L29/41733 , H01L29/41775 , H01L29/41783 , H01L29/4941 , H01L29/665 , H01L29/66545 , H01L29/6656 , H01L29/66575 , H01L29/78654
摘要： A semiconductor device having a device separation region and an active region includes a gate oxide film, a source/drain region, and an electrode which is electrically coupled to the source/drain region. The active region is in contact with the gate oxide film at a first face, a portion of the source/drain regions being located above the first face. The electrode is in contact with the source/drain region at a second face, the second face constituting an angle with respect to the first face.
摘要翻译：具有器件分离区域和有源区域的半导体器件包括栅极氧化膜，源极/漏极区域和电耦合到源极/漏极区域的电极。有源区在第一面处与栅极氧化膜接触，源/漏区的一部分位于第一面的上方。电极在第二面处与源极/漏极区域接触，第二面部相对于第一面构成一个角度。

10. 发明授权

US07711012B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07711012B2
公开(公告)日：2010-05-04
申请号：US10467808
申请日：2002-02-13
申请人： Hiroshi Iwata , Tomohisa Okuno , Akihide Shibata , Seizo Kakimoto
发明人： Hiroshi Iwata , Tomohisa Okuno , Akihide Shibata , Seizo Kakimoto
IPC分类号： H04J99/00
CPC分类号： H01L27/118 , H01L27/0207 , H01L27/11898
摘要： The yield of a semiconductor device is improved which has a large-scale logic circuit or which has both a logic circuit and a memory. A basic circuit block is provided with an input/output circuit. A transmission line and a branch line connect the input/output circuits so that information can be exchanged through the input/output circuits between one basic circuit block and another basic circuit block. The memory in each basic circuit block or in each input/output circuit can be programmed from the outside to designate the destination of a signal. By thus changing the program in the memory, the transmission destination of a signal can be changed to give various functions efficiently with a limited circuit scale. Moreover, if a basic circuit block fails another basic circuit block substitutes for it to improve the yield drastically.
摘要翻译：改善了具有大规模逻辑电路或具有逻辑电路和存储器的半导体器件的产量。基本电路块设置有输入/输出电路。传输线和分支线连接输入/输出电路，使得可以通过一个基本电路块和另一个基本电路块之间的输入/输出电路来交换信息。每个基本电路块或每个输入/输出电路中的存储器可以从外部编程以指定信号的目的地。通过这样改变存储器中的程序，可以改变信号的发送目的地，以有限的电路规模有效地提供各种功能。此外，如果基本电路块失败，另一个基本电路块代替它可以显着提高产量。

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