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1. 发明授权

US4516049A Multi-layer acoustic surface wave device having minimal delay time temperature coefficient 失效
标题翻译：具有最小延迟时间温度系数的多层声表面波器件
公开(公告)号：US4516049A
公开(公告)日：1985-05-07
申请号：US536926
申请日：1983-09-28
申请人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuyoshi Sugai
发明人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuyoshi Sugai
IPC分类号： H03H9/145 , H03H3/08 , H03H9/02 , H03H9/25 , H03H9/42
CPC分类号： H03H9/02834 , H03H9/02574
摘要： An acoustic surface wave device includes a substrate made of an elastic material, a multilayer structure disposed on a surface of the substrate and having a silicon dioxide layer and an aluminum nitride layer superimposed on each other, and electrodes having predetermined configurations formed on the multilayer structure. The main component of the elastic material is a silicon monocrystal, whose temperature coefficient of delay time for acoustic surface waves is positive, and the piezo-electric axis of the aluminum nitride is either perpendicular or parallel to the surface of the substrate, with a negative delay coefficient, counteracting that of the substrate.
摘要翻译：声表面波装置包括由弹性材料制成的基板，设置在基板的表面上并具有彼此重叠的二氧化硅层和氮化铝层的多层结构，以及形成在多层结构上的具有预定构造的电极。弹性材料的主要成分是硅单晶，其声表面波的延迟时间的温度系数为正，氮化铝的压电轴线垂直于或平行于衬底的表面，负极延迟系数，抵消衬底的延迟系数。

2. 发明授权

US4511816A Surface acoustic wave device using an elastic substrate and an aluminum nitride piezoelectric film 失效
标题翻译：使用弹性基板和氮化铝压电膜的声表面波装置
公开(公告)号：US4511816A
公开(公告)日：1985-04-16
申请号：US473410
申请日：1983-03-09
申请人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuyoshi Sugai
发明人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuyoshi Sugai
IPC分类号： H03H3/08 , H03H9/02 , H03H9/44
CPC分类号： H03H9/02834 , H03H9/02574
摘要： A surface acoustic wave device comprises an elastic substrate having a major surface with a given crystal orientation and having a positive temperature coefficient of delay (TCD), and AlN film deposited on the elastic substrate so that piezoelectric axis of the AlN film has a predetermined direction with respect to the major surface of the elastic substrate having a negative TCD, and electrodes provided on the AlN film or between the elastic substrate and the AlN film.
摘要翻译：表面声波装置包括具有给定晶体取向的主表面并且具有正温度系数延迟（TCD）的弹性基板和沉积在弹性基板上的AlN膜，使得AlN膜的压电轴线具有预定方向相对于具有负TCD的弹性基板的主表面，以及设置在AlN膜上或弹性基板和AlN膜之间的电极。

3. 发明授权

US06222300B1 Communication system using a surface acoustic wave-matched filter 失效
标题翻译：通信系统采用表面声波匹配滤波器
公开(公告)号：US06222300B1
公开(公告)日：2001-04-24
申请号：US09435190
申请日：1999-11-05
申请人： Kazuo Tsubouchi , Hiroaki Sasaki , Kazuyoshi Sugai , Kazuma Soeta , Tomohiko Shibata
发明人： Kazuo Tsubouchi , Hiroaki Sasaki , Kazuyoshi Sugai , Kazuma Soeta , Tomohiko Shibata
IPC分类号： H01L4108
CPC分类号： H04B1/70712
摘要： A spectrum diffusion signal including data representing a center frequency of an acoustic surface filter in a transmitter side is transmitted with its carrier-frequency being swept. When a receiver side receives a modulation signal, a spectrum diffusion signal including data representing a center frequency of an acoustic surface filter in a receiver side is transmitted on the carrier-frequency equal to the center frequency of the surface acoustic wave matched filter in the transmitter side included in the modulation signal. Thereafter, the transmitter side transmits spectrum diffusion signals having the carrier-frequency equal to the center frequency of the surface acoustic wave matched filter in the receiver side included in the modulation signal.
摘要翻译：包括表示发送机侧的声表面滤波器的中心频率的数据的频谱扩散信号以扫频的载波频率被发送。当接收机侧接收到调制信号时，包括表示接收机侧的声表面滤波器的中心频率的数据的频谱扩散信号在与发射机中的声表面波匹配滤波器的中心频率相等的载波频率上被发送包括在调制信号中。此后，发送机侧发送具有与包含在调制信号中的接收机侧的声表面波匹配滤波器的中心频率相等的载波频率的频谱扩散信号。

4. 发明授权

US5200664A Surface acoustic wave device 失效
标题翻译：表面声波设备
公开(公告)号：US5200664A
公开(公告)日：1993-04-06
申请号：US727557
申请日：1991-07-09
申请人： Kazuyoshi Sugai
发明人： Kazuyoshi Sugai
IPC分类号： H03H9/145 , H03H9/02 , H03H9/64 , H04B1/71 , H04J13/00
CPC分类号： H03H9/02976
摘要： In a surface acoustic wave device for removing narrow band signals, detection sensitivity is significantly improved by disposing a group of metal strip arrays on the side opposite to output transducers with respect to input transducers on the surface of a piezo-electric film and connecting a group of diode arrays with this group of metal strip arrays.
摘要翻译：在用于去除窄带信号的声表面波装置中，通过在压电薄膜表面上相对于输入变换器在与输出换能器相对的一侧设置一组金属带阵列并连接组的二极管阵列与这组金属条阵列。

5. 发明授权

US5281882A Surface acoustic wave element 失效
标题翻译：表面声波元件
公开(公告)号：US5281882A
公开(公告)日：1994-01-25
申请号：US878561
申请日：1992-05-05
申请人： Kazuyoshi Sugai
发明人： Kazuyoshi Sugai
IPC分类号： H03H9/25 , H03H9/02 , H03H9/05 , H01L41/08
CPC分类号： H03H9/0542 , H03H9/02566 , H03H9/02574 , H03H9/02976
摘要： A GaAs piezoelectric semiconductor thin film in the form of an epitaxial film is provided on a Si substrate 1, and an input transducer 3 and an output transducer 4 for input and output of a surface acoustic wave are provided on the film. A surface acoustic wave element, thus arranged, has a sound characteristic superior to that of a single crystalline GaAs substrate and permits the use of an electromechanical coupling coefficient larger than that of the single crystalline GaAs. Thus the element copes with a much higher sound velocity of SAWs.
摘要翻译：在Si衬底1上设置外延膜形式的GaAs压电半导体薄膜，并且在膜上设置用于输入和输出声表面波的输入变换器3和输出变换器4。这样布置的表面声波元件具有优于单晶GaAs衬底的声音特性，并且允许使用大于单晶GaAs的机电耦合系数。因此，该元件可以处理更高的声速的SAW。

6. 发明授权

US5075652A Wide band surface acoustic wave filter having constant thickness piezoelectric layer and divergent transducers 失效
标题翻译：宽带声表面波滤波器具有恒定厚度的压电层和发散换能器
公开(公告)号：US5075652A
公开(公告)日：1991-12-24
申请号：US370196
申请日：1989-06-22
申请人： Kazuyoshi Sugai
发明人： Kazuyoshi Sugai
IPC分类号： H03H3/08 , H03H9/02 , H03H9/145
CPC分类号： H03H9/14558 , H03H9/02566 , H03H9/14547 , H03H9/14517
摘要： In a wide band surface acoustic wave filter having a multilayered structure, in which an elastic substrate and a piezoelectric thin film are combined, transducers are so constructed that the period of electrodes thereof varies in the direction perpendicular to the propagation direction of the surface acoustic wave.
摘要翻译：在组合有弹性基板和压电薄膜的多层结构的宽带声表面波滤波器中，换能器被构造成使其电极的周期在与声表面波的传播方向垂直的方向上变化。

7. 发明授权

US5196720A Narrow band interference signal removing device 失效
标题翻译：窄带干扰信号去除装置
公开(公告)号：US5196720A
公开(公告)日：1993-03-23
申请号：US521142
申请日：1990-05-08
申请人： Kazuyoshi Sugai , Katsuyuki Omori
发明人： Kazuyoshi Sugai , Katsuyuki Omori
IPC分类号： H03H9/02
CPC分类号： H03H9/02566
摘要： A narrow band interference signal removing device uses first diode arrays and second diode arrays both provided in propagation paths of surface acoustic waves in order for the first diode arrays to detect the signal magnitude of a surface acoustic wave propagating in an opposite direction to obtain information on the spectrum magnitude of an input signal and responsively control a bias to the second diode arrays.
摘要翻译：窄带干扰信号去除装置使用在表面声波的传播路径中提供的第一二极管阵列和第二二极管阵列，以便第一二极管阵列检测在相反方向传播的声表面波的信号幅度，以获得关于输入信号的频谱幅度并且响应地控制对第二二极管阵列的偏置。

8. 发明授权

US5030930A Surface-acoustic-wave convolver 失效
标题翻译：表面声波卷积器
公开(公告)号：US5030930A
公开(公告)日：1991-07-09
申请号：US376758
申请日：1989-07-07
申请人： Kazuyoshi Sugai
发明人： Kazuyoshi Sugai
IPC分类号： H03H9/72 , G06G7/195 , H03H3/08 , H03H9/02
CPC分类号： H03H9/02976 , G06G7/195
摘要： A strip coupled type convolver includes an aluminum nitride (AlN) layer and a semiconductor layer both provided on a single sapphire substrate, and includes many metal strips extending across a surface wave propagating path on a surface of the AlN piezoelectric layer to transmit a potential on the piezoelectric surface to a Schottky diode array provided on the semiconductor surface to cause a nonlinear interaction.
摘要翻译：带状耦合型卷积器包括在单个蓝宝石衬底上设置的氮化铝（AlN）层和半导体层，并且包括在AlN压电层的表面上延伸穿过表面波传播路径的许多金属条，以将该压电表面设置在半导体表面上以产生非线性相互作用的肖特基二极管阵列。

9. 发明授权

US5028101A Surface-acoustic-wave device and notch filter device having a plurality of diode array channels 失效
标题翻译：具有多个二极管阵列通道的表面声波装置和陷波滤波器装置
公开(公告)号：US5028101A
公开(公告)日：1991-07-02
申请号：US381121
申请日：1989-07-14
申请人： Kazuyoshi Sugai , Osamu Noguchi
发明人： Kazuyoshi Sugai , Osamu Noguchi
IPC分类号： G06G7/195 , H03H9/02 , H03H9/64
CPC分类号： H03H9/02976 , G06G7/195
摘要： A SAW device uses an input and output transducers having different electrode periods, and includes diode arrays provided in a semiconductor layer under a gate electrode between both transducers, so that the device has an excellent efficiency as a notch filter.
摘要翻译： SAW器件使用具有不同电极周期的输入和输出换能器，并且包括设置在两个换能器之间的栅极下的半导体层中的二极管阵列，使得该器件作为陷波滤波器具有优异的效率。

10. 发明授权

US5111100A Surface acoustic wave device and method for fabricating same 失效
标题翻译：表面声波装置及其制造方法
公开(公告)号：US5111100A
公开(公告)日：1992-05-05
申请号：US637058
申请日：1991-01-03
申请人： Osamu Noguchi , Kazuyoshi Sugai
发明人： Osamu Noguchi , Kazuyoshi Sugai
IPC分类号： H03H3/08 , H03H9/02
CPC分类号： H03H3/08 , H03H9/02566
摘要： A surface acoustic wave device is disclosed, by which it is possible to improve characteristics of a system suitable for suppressing narrow frequency band interference, which is useful for a spread spectrum communication system, and to increase the signal intensity at the detecting portion without changing characteristics of the filter portion.In a surface acoustic wave element, in a p conductivity type Si epitaxial layer 2 formed on a p+ conductivity type Si monocrystal substrate 1 the epitaxial layer on the siganl detecting portion is formed so as to be thinner than the other portion by means of a buried layer.In this way, even with a same intensity of the input signal at the transducer, the loss of SAW is reduced and as the result the intensity of the detected signal is increased.By the present invention it is possible to increase the signal intensity at the detecting portion without changing characteristics of the filter portion.
摘要翻译：公开了一种表面声波装置，通过该表面声波装置，可以改善适用于抑制窄频带干扰的系统的特性，这对于扩频通信系统是有用的，并且在不改变特性的情况下增加检测部分处的信号强度的过滤器部分。在表面声波元件中，在p +导电型Si单晶衬底1上形成的p型导电型Si外延层2中，通过掩模层形成siganl检测部分上的外延层比另一部分薄。以这种方式，即使在换能器处具有相同强度的输入信号，SAW的损耗也减小，结果是检测到的信号的强度增加。通过本发明，可以在不改变过滤器部分的特性的情况下增加检测部分处的信号强度。

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