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    • 2. 发明授权
    • AlN sintered body having high thermal conductivity and a method of
fabricating the same
    • 具有高导热性的AlN烧结体及其制造方法
    • US4847221A
    • 1989-07-11
    • US142818
    • 1988-01-11
    • Akihiro HoriguchiFumio UenoMitsuo KasoriYoshiko SatoMasaru HayashiHiroshi EndoKazuo ShinozakiAkihiko Tsuge
    • Akihiro HoriguchiFumio UenoMitsuo KasoriYoshiko SatoMasaru HayashiHiroshi EndoKazuo ShinozakiAkihiko Tsuge
    • C04B35/581
    • C04B35/581
    • According to the present invention, there is provided an aluminum nitride sintered body having a high thermal conductivity and essentially consisting of a AlN single-phase, containing 0.01 to 8,000 ppm of rare earth elements and less than 2,000 ppm of oxygen. According to the present invention, there is provided a method of fabricating an aluminum nitride sintered body having a high thermal conductivity and essentially consisting of AlN single-phase, containing 0.01 to 8,000 ppm of rare earth elements and less than 2,000 ppm of oxygen, wherein a molded body prepared by mixing and molding an aluminum nitride power having less than 7 wt % of oxygen and an average particle size of 0.05 to 5 .mu.m and with rare earth compounds of 0.01 to 15 wt % of based on rare earth elements content, or a sintered AlN body containing oxide grain boundary phases of 0.01 to 15 wt % of rare earth elements and 0.01 to 20 wt % of oxygen and (rare earth element)--Al--O compounds phases and/or (rare earth element)--O compounds phases, is fired in a reducing atmosphere at a temperature of 1,550 to 2,050.degree. C. for 4 hours or more.
    • 根据本发明,提供了一种具有高导热性且基本上由含有0.01至8,000ppm的稀土元素和小于2,000ppm的氧的AlN单相组成的氮化铝烧结体。 根据本发明,提供一种制造具有高导热性且基本由AlN单相组成的氮化铝烧结体的方法,该AlN单相含有0.01至8,000ppm的稀土元素和小于2,000ppm的氧,其中 通过将少于7重量%的氧和平均粒径为0.05〜5μm的氮化铝粉末和基于稀土元素含量为0.01〜15重量%的稀土类化合物混合成型而制备的成型体, 或含有0.01〜15重量%的稀土元素和0.01〜20重量%的氧和(稀土元素)-Al-O化合物相和/或(稀土元素)-Oi的氧化物晶界相的烧结AlN体 化合物相在1550〜2050℃的温度下在还原气氛中烧成4小时以上。
    • 6. 发明授权
    • Aluminum nitride sintered body and process for producing the same
    • 氮化铝烧结体及其制造方法
    • US4746637A
    • 1988-05-24
    • US760772
    • 1985-07-31
    • Mituo KasoriKazuo ShinozakiKazuo AnzaiAkihiko Tsuge
    • Mituo KasoriKazuo ShinozakiKazuo AnzaiAkihiko Tsuge
    • C04B35/581C04B35/58
    • C04B35/581
    • Disclosed are an aluminum nitride sintered body comprising aluminum nitride, rare earth element-aluminum compounds and alkaline earth metal-aluminum compounds, and a process for producing an aluminum nitride sintered body, which comprises adding to aluminum nitride powder:(a) powder of at least one compound selected from the group consisting of rare earth element oxides, rare earth element fluorides and compounds capable of being converted into these oxides or fluorides by calcination, and(b) powder of at least one compound selected from the group consisting of alkaline earth metal oxides, alkali earth metal fluorides and compounds capable of being converted into these oxides or fluorides by calcination, in a total amount of 0.01 to 20 wt % as calculated on the weight of the oxides or the fluorides, and then molding and sintering the resultant mixture.
    • 公开了一种包含氮化铝,稀土元素 - 铝化合物和碱土金属 - 铝化合物的氮化铝烧结体,以及一种制造氮化铝烧结体的方法,其包括向氮化铝粉末中加入:(a) 选自稀土元素氧化物,稀土元素氟化物和能够通过煅烧转化为这些氧化物或氟化物的化合物中的至少一种化合物,和(b)至少一种选自碱土金属的化合物的粉末 金属氧化物,碱土金属氟化物和能够通过煅烧转化为这些氧化物或氟化物的化合物,其总量按照氧化物或氟化物的重量计算为0.01〜20重量%,然后成型和烧结所得物 混合物。
    • 8. 发明授权
    • Silicon carbide sintered body and method of manufacturing the same
    • 碳化硅烧结体及其制造方法
    • US4853299A
    • 1989-08-01
    • US903141
    • 1986-09-03
    • Toshiaki MizutaniTakeyuki YonezawaHiroshi InoueAkihiko TsugeYoshiyuki Ohnuma
    • Toshiaki MizutaniTakeyuki YonezawaHiroshi InoueAkihiko TsugeYoshiyuki Ohnuma
    • C04B35/565
    • C04B35/565Y10S264/36
    • A silicon carbide sintered body containing not less than 0.03% by weight of boron, a total of not more than 0.3% by weight of metallic element impurities including the boron, not more than 1.0% by weight of free carbon, a total of not more than 0.15% by weight of non-metal impurities other than the free carbon, and the balance essentially consisting of silicon carbide, and having a density of not less 3.10 g/cm.sup.3. The sintered body is manufactured by heating a molding of a mixture containing a silicon carbide powder, a boron-containing sintering assistant, and a carbon-containing oxygen scavenger to a sintering temperature. The molded body is maintained at a temperature lower than the sintering temperature during the heating process until an oxide film covering the silicon carbide powder is substantially removed by the oxygen scavenger, and the molded body is then sintered at the sintering temperature under a non-pressurized condition.
    • 含有不少于0.03重量%的硼,总计不超过0.3重量%的包含硼的金属元素杂质,不超过1.0重量%游离碳的碳化硅烧结体,总计不超过 超过0.15重量%的除游离碳以外的非金属杂质,余量基本上由碳化硅组成,密度不小于3.10g / cm 3。 通过将含有碳化硅粉末,含硼烧结助剂和含碳氧清除剂的混合物的成型加热至烧结温度来制造烧结体。 成型体在加热过程中保持在低于烧结温度的温度,直到氧清除剂基本上除去覆盖碳化硅粉末的氧化膜,然后在未加压的烧结温度下将成型体烧结 条件。
    • 10. 发明授权
    • Method for producing powder of .alpha.-silicon nitride
    • 生产α-氮化硅粉末的方法
    • US4264565A
    • 1981-04-28
    • US121095
    • 1980-02-13
    • Hiroshi InoueKatsutoshi KomeyaAkihiko Tsuge
    • Hiroshi InoueKatsutoshi KomeyaAkihiko Tsuge
    • C01B21/068C04B35/584C01B21/06
    • C04B35/584C01B21/0685C01P2004/61C01P2006/80
    • A method for producing powder of .alpha.-silicon nitride which comprises the steps of:adding 0.3 to 2 parts by weight of powder of carbon and 0.005 to 1 paret by weight of at least one silicon compound selected from the group consisting of Si.sub.3 N.sub.4, SiC and silicon oxide nitride series compounds to one part by weight (as converted to SiO.sub.2) to a liquid silane derivative which produces a precipitate and HCl by hydrolysis and further causes SiO.sub.2 to be grown by the baking of said precipitate, or the precipitate produced by hydrolysis of the liquid silane derivatives;hydrolyzing the resultant mixture, if necessary;washing the mixture to separate a solid component, if necessary; andbaking the solid component for reduction and nitrogenization at a temperature of 1300.degree. to 1500.degree. C. in an atmosphere mainly consisting of a nitrogen gas or a gas of a nitrogen compound.
    • 一种生产α-氮化硅粉末的方法,包括以下步骤:将0.3至2重量份的碳粉和0.005至1重量份的至少一种选自Si 3 N 4,SiC的硅化合物和 氧化硅氮化物系列化合物与1重量份(转化为SiO 2)相对于通过水解产生沉淀物和HCl的液体硅烷衍生物,并且进一步通过焙烧所述沉淀生成SiO 2或通过水解生成的沉淀 液体硅烷衍生物; 如果需要,水解所得混合物; 如果需要,洗涤混合物以分离固体组分; 在1300〜1500℃的温度下,在氮气或氮化合物气体的气氛中焙烧固体成分。