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1. 发明授权

US5366914A Vertical power MOSFET structure having reduced cell area 失效
标题翻译：垂直功率MOSFET结构具有减小的单元面积
公开(公告)号：US5366914A
公开(公告)日：1994-11-22
申请号：US11151
申请日：1993-01-29
申请人： Nobumitsu Takahashi , Mitsuasa Takahashi , Hitoshi Kubota
发明人： Nobumitsu Takahashi , Mitsuasa Takahashi , Hitoshi Kubota
IPC分类号： H01L21/336 , H01L29/45 , H01L29/78 , H01L21/265
CPC分类号： H01L29/7802 , H01L29/7813 , H01L29/41766 , H01L29/456
摘要： In a vertical power field effect transistor, a side surface of a gate electrode is covered with a side oxide film, and a groove is formed in self-alignment with the side oxide film to extend from a surface area of a silicon substrate between a pair of adjacent gate electrodes, to reach a base region. A tungsten film is filled into the groove thus formed, and a source electrode-is formed in contact with the tungsten film within the groove.
摘要翻译：在垂直功率场效应晶体管中，栅电极的侧面被侧面氧化膜覆盖，并且形成与侧氧化膜自对准的沟槽，以从一对硅衬底的表面区域延伸的相邻栅电极到达基区。将钨膜填充到如此形成的槽中，并且形成与沟槽内的钨膜接触的源电极。

2. 发明授权

US5313088A Vertical field effect transistor with diffused protection diode 失效
标题翻译：具有扩散保护二极管的垂直场效应晶体管
公开(公告)号：US5313088A
公开(公告)日：1994-05-17
申请号：US762208
申请日：1991-09-19
申请人： Nobumitsu Takahashi , Mitsuasa Takahashi
发明人： Nobumitsu Takahashi , Mitsuasa Takahashi
IPC分类号： H01L27/02 , H01L29/10 , H01L29/423 , H01L29/78 , H01L29/34
CPC分类号： H01L29/7811 , H01L27/0255 , H01L29/7805 , H01L2224/05624 , H01L2224/85424 , H01L29/0619 , H01L29/0638 , H01L29/0696 , H01L29/1095 , H01L29/42368 , H01L2924/00014 , H01L2924/01014 , H01L2924/1305 , H01L2924/13091
摘要： A vertical field effect transistor of the structure having a gate pad and a gate finger, includes a semiconductor substrate of a first conduction type, and a first diffusion region of a second conduction type opposite to the first conduction type, formed in a principal surface of the substrate under the gate pad and the gate finger. A second diffusion region of the second conduction type is formed in the principal surface of the substrate and electrically connected to a source electrode so as to form a protection diode between the substrate and the second diffusion region. The second diffusion region is separated from the first diffusion region.
摘要翻译：具有栅极焊盘和栅极指状的结构的垂直场效应晶体管包括：第一导电类型的半导体衬底和与第一导电类型相反的第二导电类型的第一扩散区域，栅极衬底和栅极指。第二导电类型的第二扩散区形成在基板的主表面上并与源电极电连接，从而在基板和第二扩散区之间形成保护二极管。第二扩散区域与第一扩散区域分离。

3. 发明授权

US07614758B2 Backlight for color liquid crystal display apparatus 有权
标题翻译：背光用于彩色液晶显示装置
公开(公告)号：US07614758B2
公开(公告)日：2009-11-10
申请号：US11566130
申请日：2006-12-01
申请人： Mitsuasa Takahashi
发明人： Mitsuasa Takahashi
IPC分类号： G01D11/28
CPC分类号： G02B6/0076 , G02B6/0068 , G02B6/0073 , G02F1/133603 , G02F1/133621 , G02F2203/34
摘要： A backlight for a color liquid crystal display apparatus includes a first light-guide plate; a first incidence part for receiving light of a first primary color in a first area on a first lateral surface of the first light-guide plate; a second incidence part for receiving light of a second primary color light in a second area on a second lateral surface that is opposite to the first lateral surface of the first light-guide plate; and a third incidence part for receiving light of a third primary color in a third area on a rear surface of the first light-guide plate. The number of superposition steps is thereby reduced, light-guide plates can easily be superposed onto an LCD panel with high accuracy, and a lightweight and inexpensive backlight for a color liquid crystal display apparatus can be obtained.
摘要翻译：彩色液晶显示装置的背光源包括：第一导光板; 用于在第一导光板的第一侧表面上的第一区域中接收第一基色的光的第一入射部分; 第二入射部分，用于在与第一导光板的第一侧表面相对的第二侧表面上的第二区域中接收第二原色光的光; 以及第三入射部分，用于在第一导光板的后表面上的第三区域中接收第三原色光。由此，能够将导光板容易地以高精度重叠在LCD面板上，从而可以减少重叠台数，能够获得彩色液晶显示装置的轻便且廉价的背光源。

4. 发明授权

US07476470B2 Method for manufacturing thin film semiconductor device and method for forming resist pattern thereof 有权
标题翻译：薄膜半导体器件的制造方法及其形成抗蚀剂图案的方法
公开(公告)号：US07476470B2
公开(公告)日：2009-01-13
申请号：US10987772
申请日：2004-11-12
申请人： Mitsuasa Takahashi
发明人： Mitsuasa Takahashi
IPC分类号： G03F1/00
CPC分类号： H01L29/6675 , H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a thin film semiconductor device is provided which is capable of achieving simplification of manufacturing processes and of improving alignment accuracy without using a plurality of alignment masks. An alignment pattern is formed by using a resist layer having a plurality of regions each having a different film thickness corresponding to each of a plurality of patterns produced using a halftone mask having a halftone exposure region as a photomask and by forming a light transmitting portion to be an aperture pattern and by etching an underlying silicon layer. By having an underlying silicon layer exposed and implanting ions into an entire resist layer, only a main pattern region is doped with the ions.
摘要翻译：提供一种制造薄膜半导体器件的方法，其能够在不使用多个对准掩模的情况下实现制造工艺的简化和提高对准精度。通过使用具有多个区域的抗蚀剂层形成对准图案，所述抗蚀剂层具有对应于使用具有半色调曝光区域的半色调掩模制造的多个图案中的每一个作为光掩模，并且通过形成透光部分作为孔径图案，并通过蚀刻下面的硅层。通过使底层硅层暴露并将离子注入到整个抗蚀剂层中，只有主图案区域掺杂有离子。

5. 发明申请

US20070109435A1 Light-receiving circuit 有权
标题翻译：光接收电路
公开(公告)号：US20070109435A1
公开(公告)日：2007-05-17
申请号：US11588348
申请日：2006-10-27
申请人： Mitsuasa Takahashi
发明人： Mitsuasa Takahashi
IPC分类号： H04N5/335 , H04N3/14
CPC分类号： H04N5/374 , H01L27/14609 , H01L27/14692
摘要： A light-receiving circuit is provided which is capable of reducing component counts, improving light-receiving accuracy and increasing a dynamic range of an amount of received light. The light-receiving circuit includes a photodiode made of thin films formed on an insulating substrate, a transferring TFT (Thin Film Transistor) to transfer charges induced by the photodiode according to input light, a charge accumulating capacitor to accumulate transferred charges, and a reading TFT to transfer charges accumulated in the charge accumulating capacitor to a charge reading signal line.
摘要翻译：提供一种光接收电路，其能够减少分量计数，提高光接收精度并增加接收光量的动态范围。光接收电路包括由绝缘基板上形成的薄膜构成的光电二极管，转移TFT（薄膜晶体管），用于根据输入光传输由光电二极管感应的电荷，积累电荷以积累转移的电荷，以及读数 TFT将电荷累积电容器中累积的电荷转移到电荷读取信号线。

6. 发明申请

US20070095148A1 Pressure sensor 有权
标题翻译：压力传感器
公开(公告)号：US20070095148A1
公开(公告)日：2007-05-03
申请号：US11586512
申请日：2006-10-26
申请人： Mitsuasa Takahashi
发明人： Mitsuasa Takahashi
IPC分类号： G01L9/00
CPC分类号： G01L9/0072 , G01D21/02 , G01L19/0092 , G01P15/125 , G01P2015/0828
摘要： A lower capacitive electrode and a capacitive electrode of an opposite substrate are provided to mutually facing surfaces of a TFT substrate and the opposite substrate, respectively; and a seal member is provided to the peripheral part of both substrates. The seal member creates a predetermined gap between the substrates, and the surrounded space is sealed by the seal member. A pressure sensor measures pressure applied to the substrates based on variations in capacitance between the lower capacitive electrode and the facing-substrate capacitive electrode. An acceleration sensor is incorporated into the TFT substrate within the pressure sensor. The presence of the acceleration sensor inside the pressure sensor thereby eliminates the need for a separate pressure sensor and acceleration sensor, and allows a pressure sensor that improves the moisture resistance of the acceleration sensor to be provided.
摘要翻译：相对基板的下电容电极和电容电极分别设置在TFT基板和相对基板的相互面对的表面上; 并且将密封构件设置到两个基板的周边部分。密封构件在基板之间产生预定的间隙，并且被密封构件密封被包围的空间。压力传感器基于下电容电极和面对基板电容电极之间的电容变化来测量施加到基板的压力。加速度传感器被并入压力传感器内的TFT基板中。压力传感器内的加速度传感器的存在因此消除了对单独的压力传感器和加速度传感器的需要，并且允许提供提高加速度传感器的耐湿性的压力传感器。

7. 发明申请

US20050089771A1 Method for manufacturing thin film semiconductor device and method for forming resist pattern thereof 有权
公开(公告)号：US20050089771A1
公开(公告)日：2005-04-28
申请号：US10987772
申请日：2004-11-12
申请人： Mitsuasa Takahashi
发明人： Mitsuasa Takahashi
IPC分类号： G03F7/20 , H01L21/027 , H01L21/336 , H01L23/544 , H01L29/786 , G03C5/00 , G03F9/00
CPC分类号： H01L29/6675 , H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a thin film semiconductor device is provided which is capable of achieving simplification of manufacturing processes and of improving alignment accuracy without using a plurality of alignment masks. An alignment pattern is formed by using a resist layer having a plurality of regions each having a different film thickness corresponding to each of a plurality of patterns produced using a halftone mask having a halftone exposure region as a photomask and by forming a light transmitting portion to be an aperture pattern and by etching an underlying silicon layer. By having an underlying silicon layer exposed and implanting ions into an entire resist layer, only a main pattern region is doped with the ions.

8. 发明授权

US5237194A Power semiconductor device 失效
标题翻译：功率半导体器件
公开(公告)号：US5237194A
公开(公告)日：1993-08-17
申请号：US690585
申请日：1991-04-24
申请人： Mitsuasa Takahashi
发明人： Mitsuasa Takahashi
IPC分类号： H01L27/02 , H01L27/088
CPC分类号： H01L27/088 , H01L27/0251
摘要： A power semiconductor device is constructed by integrating a DMOS transistor and a lateral MOS transistor on the same semiconductor chip. The lateral MOS transistor is formed within a well with a conductivity type which is the same as the conductivity type of the source region of the DMOS transistor. The gate voltage is monitored at the time of connecting the gate and the drain of the lateral MOS transistor and of driving it at a constant current. When the gate voltage drops below a predetermined value, the driving of the DMOS transistor is stopped. The breakdown of the power semiconductor device due to heating can thus be prevented.
摘要翻译：通过在相同的半导体芯片上集成DMOS晶体管和横向MOS晶体管来构成功率半导体器件。横向MOS晶体管形成在具有与DMOS晶体管的源极区域的导电类型相同的导电类型的阱内。在连接横向MOS晶体管的栅极和漏极之间并以恒定电流驱动栅极电压时，监视栅极电压。当栅极电压下降到预定值以下时，DMOS晶体管的驱动停止。因此可以防止由于加热引起的功率半导体器件的击穿。

9. 发明授权

US07724226B2 Driving circuit and driving method for liquid crystal display panel 失效
标题翻译：液晶显示面板驱动电路及驱动方法
公开(公告)号：US07724226B2
公开(公告)日：2010-05-25
申请号：US11561635
申请日：2006-11-20
申请人： Mitsuasa Takahashi
发明人： Mitsuasa Takahashi
IPC分类号： G09G3/36
CPC分类号： G09G3/3618 , G09G2310/0251 , G09G2310/0275 , G09G2320/0252 , G09G2360/18
摘要： A driving circuit for a LCD (Liquid Crystal Display) panel is provided which is capable of performing overdriving operations in all shades of gray and of obviating the necessity of predetermining a driving pattern based on experimental results. The driving circuit for the LCD panel includes an operational amplifier to a non-inverted input terminal of which a voltage to charge a pixel for current gray level display is applied and to an inverted input of which a voltage for charging a corresponding pixel occurred one field before, a NAND circuit to detect an output state of operational amplifiers, a P-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) to switch operational states from one state in which the operational amplifier operates as a comparator to perform overdriving operations using source voltages to one state in which a pixel to be charged using a gray level voltage.
摘要翻译：提供了一种用于LCD（液晶显示器）面板的驱动电路，其能够执行所有灰度阴影的过驱动操作，并且基于实验结果避免了预先确定驱动模式的必要性。用于LCD面板的驱动电路包括一个运算放大器到一个非反相输入端，该反相输入端施加用于当前灰度级显示的像素的电荷电压，以及一个反相输入，一个相应像素的充电电压发生一个场之前，用于检测运算放大器的输出状态的NAND电路，用于从运算放大器作为比较器运行的一个状态切换运行状态的P沟道MOSFET（使用源极电压进行过驱动）到使用灰度电压的要被充电的像素的一个状态。

10. 发明申请

US20060258080A1 Vertical diode, matrix position sensitive apparatus and manufacturing method of the same 审中-公开
标题翻译：立式二极管，矩阵位置敏感装置及其制造方法
公开(公告)号：US20060258080A1
公开(公告)日：2006-11-16
申请号：US11430896
申请日：2006-05-10
申请人： Mitsuasa Takahashi
发明人： Mitsuasa Takahashi
IPC分类号： H01L21/8238 , H01L23/58
CPC分类号： H01L27/1255 , H01L27/1214 , H01L27/1259
摘要： A vertical diode formed by stacking semiconductor layers includes (1) a lower electrode whose surface is plasma-treated in a gas containing an element which becomes a P-type or N-type conductivity type, and (2) a non-doped semiconductor layer provided on the lower electrode. The P-type or N-type semiconductor area is formed in a contact surface of the non-doped semiconductor layer in contact with the plasma-treated surface of the lower electrode.
摘要翻译：通过堆叠半导体层形成的垂直二极管包括（1）在包含成为P型或N型导电类型的元素的气体中等离子体处理表面的下电极，以及（2）非掺杂半导体层设置在下电极上。 P型或N型半导体区域形成在与下电极的等离子体处理表面接触的非掺杂半导体层的接触表面中。

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