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1. 发明授权

US11493776B2 Polarization multiplexed optical transmitter circuit and polarization multi/demultiplexed optical transceiver circuit 有权
公开(公告)号：US11493776B2
公开(公告)日：2022-11-08
申请号：US17311955
申请日：2019-12-24
申请人： Nippon Telegraph and Telephone Corporation
发明人： Yusuke Nasu , Manabu Oguma , Shogo Yamanaka , Makoto Jizodo
IPC分类号： H04J14/06 , G02B27/28 , G02F1/295 , H04B10/40
摘要： A polarization multiplex optical transmitter circuit can provide compensation for the transmission PDL while reducing decrease in transmission power. The polarization multiplex optical transmitter circuit includes a beam divider circuit configured to divide light outputted from a light source, optical phase shifters provided in at least one of two waveguides connected to output terminals of the beam divider circuit, a light wave synthesizer circuit connected to the two waveguides, first and second optical transmitters coupled to two output terminals of the light wave synthesizer circuit, a polarization multiplexer configured to synthesize two output polarized waves from the first and second optical transmitters, and a polarization rotator provided between the first and second optical transmitters and the polarization multiplexer and coupled to at least one of the first and second optical transmitters.

2. 发明授权

US10146099B2 Optical modulator 有权
公开(公告)号：US10146099B2
公开(公告)日：2018-12-04
申请号：US15528874
申请日：2015-12-08
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： Ken Tsuzuki , Shin Kamei , Makoto Jizodo
IPC分类号： G02F1/225 , G02F1/21
摘要： The present invention provides an optical modulator including a substrate and a phase modulation portion on the substrate. The phase modulation portion includes an optical waveguide comprised of a first clad layer, a semiconductor layer that is laminated on the first clad layer and has a refraction index higher than the first clad layer and a second clad layer that is laminated on the semiconductor layer and has a refraction index lower than the semiconductor layer, a first traveling wave electrode, and a second traveling wave electrode. The semiconductor layer includes a rib that is formed in the optical waveguide in an optical axis direction and is a core of the optical waveguide, a first slab that is formed in the optical axis direction in one side of the rib, a second slab that is formed in the optical axis direction in the other side of the rib, a third slab that is formed in the first slab in the optical axis direction at the opposite side to the rib, and a fourth slab that is formed in the second slab in the optical axis direction at the opposite side to the rib. The first slab is formed to be thinner than the rib and the third slab, and the second slab is formed to be thinner than the rib and the fourth slab.

3. 发明授权

US11982839B2 Optical 90 degree hybrid circuit 有权
公开(公告)号：US11982839B2
公开(公告)日：2024-05-14
申请号：US17442026
申请日：2020-04-16
申请人： Nippon Telegraph and Telephone Corporation
发明人： Makoto Jizodo , Manabu Oguma , Yusuke Nasu , Yuichiro Ikuma
IPC分类号： G02B6/125 , H01P5/22 , H04B10/61
CPC分类号： G02B6/125 , H01P5/227 , H04B10/61
摘要： To provide an optical 90-degree hybrid formed of a silicon waveguide capable of suppressing an optical loss and a phase error, and facilitating electronic packaging and optical packaging. In the optical 90-degree hybrid circuit including two optical branching units facing each other and two optical coupling units facing away from each other, four arm waveguides are arranged including bent waveguides each of which guides an output light of the optical branching unit to the optical coupling unit, and is formed in a curved shape.

4. 发明授权

US10720543B2 Photodetector 有权
公开(公告)号：US10720543B2
公开(公告)日：2020-07-21
申请号：US15751795
申请日：2016-08-28
申请人： Nippon Telegraph and Telephone Corporation
发明人： Hiroshi Fukuda , Shin Kamei , Ken Tsuzuki , Makoto Jizodo , Kiyofumi Kikuchi
IPC分类号： H01L31/102 , H01L31/105 , H01L31/0224 , H01L31/0352 , H01L31/028 , H01L31/0232 , H01L31/0264
摘要： A germanium photodetector which reduces a dark current without degradation of a photocurrent includes: a silicon substrate; a lower clad layer formed on the silicon substrate; a core layer formed on the lower clad layer; a p-type silicon slab formed in a part of the core layer and doped with a p-type impurity ion; p++ silicon electrode sections that are highly-doped with a p-type impurity and act as an electrode; and germanium layers which absorb light. The germanium photodetector further includes an upper clad layer, an n-type germanium region doped with an n-type impurity above the germanium layer, and an electrode. According to the present invention, two germanium layers are provided on the p-type silicon slab so as to miniaturize the area of the surface of the individual germanium layer in contact with the p-type silicon slab, so that the dark current due to threading dislocation can be reduced.

5. 发明申请

US20180335365A1 SILICON OPTICAL CIRCUIT 审中-公开
公开(公告)号：US20180335365A1
公开(公告)日：2018-11-22
申请号：US15776027
申请日：2016-11-17
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： Shin Kamei , Makoto Jizodo , Kotaro Takeda , Hiroshi Fukuda
IPC分类号： G01M11/00 , G02B6/124 , G02B6/122 , G02B6/12
CPC分类号： G01M11/33 , G02B6/12007 , G02B6/122 , G02B6/1228 , G02B6/124 , G02B6/125 , G02B6/13 , G02B2006/12061 , G02B2006/12107 , G02B2006/12138 , G02B2006/12147 , G02B2006/12164
摘要： The visual detection of a silicon optical circuit in a conventional technique depends on sensory decision by a human who visually conducts checking, and there has been limitation in completely detecting small flaws. The optical circuit of the present invention includes, in addition to an optical circuit that implements desired functions, an optical waveguide for flaw detection which surrounds the entire optical circuit and which is sufficiently proximate to the optical waveguide of the optical circuit and grating couplers connected to the optical waveguide for detection. Based on the transmission characteristic measurement of the optical waveguide for detection using the grating couplers, a flaw within each chip can be efficiently discovered in the state of a wafer before being cut into chips. A flaw can also be discovered hierarchically by providing individual optical waveguides for detection for respective chips and by further forming one common optical waveguide for detection over the plurality of chips.

6. 发明授权

US10193653B2 Polarization multiplexing optical transmission circuit and polarization multiplexing optical transmission and reception circuit 有权
公开(公告)号：US10193653B2
公开(公告)日：2019-01-29
申请号：US15564269
申请日：2016-04-12
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： Shin Kamei , Makoto Jizodo , Hiroshi Fukuda , Kiyofumi Kikuchi , Ken Tsuzuki
IPC分类号： H04J14/06 , H01S5/022 , H04B10/516 , H04J14/00 , H04J14/04
摘要： A one chip-integrated digital coherent polarization multiplexing optical transmission and reception circuit with optimal optical power distribution between sending and receiving is provided by using an optical power splitter having a branching ratio of a lower asymmetry property so that the unbalanced loss depending on the polarization path can be compensated. A polarization multiplexing optical transmission and reception circuit includes a polarization multiplexing optical transmission circuit, including: the first optical power splitter for branching the optical power of continuous light outputted from a light source; one polarization optical modulation circuit at the side of a path having a higher loss connected to one output of the first optical power splitter; the second optical power splitter connected to the other output of the first optical power splitter; and the other polarization optical modulation circuit connected to one output of the second optical power splitter.

7. 发明授权

US10190941B2 Silicon optical circuit for flaw detection in an optical circuit element 有权
公开(公告)号：US10190941B2
公开(公告)日：2019-01-29
申请号：US15776027
申请日：2016-11-17
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： Shin Kamei , Makoto Jizodo , Kotaro Takeda , Hiroshi Fukuda
IPC分类号： G01M11/00 , G02B6/124 , G02B6/122 , G02B6/12
摘要： The visual detection of a silicon optical circuit in a conventional technique depends on sensory decision by a human who visually conducts checking, and there has been limitation in completely detecting small flaws. The optical circuit of the present invention includes, in addition to an optical circuit that implements desired functions, an optical waveguide for flaw detection which surrounds the entire optical circuit and which is sufficiently proximate to the optical waveguide of the optical circuit and grating couplers connected to the optical waveguide for detection. Based on the transmission characteristic measurement of the optical waveguide for detection using the grating couplers, a flaw within each chip can be efficiently discovered in the state of a wafer before being cut into chips. A flaw can also be discovered hierarchically by providing individual optical waveguides for detection for respective chips and by further forming one common optical waveguide for detection over the plurality of chips.

8. 发明申请

US20170068048A1 POLARIZATION ROTATOR 有权
标题翻译：极化旋转器
公开(公告)号：US20170068048A1
公开(公告)日：2017-03-09
申请号：US15122840
申请日：2015-03-04
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： Shin Kamei , Makoto Jizodo , Hiroshi Fukuda , Kiyofumi Kikuchi
IPC分类号： G02B6/126 , G02B6/28 , G02B6/122 , G02B6/27 , G02B6/14
CPC分类号： G02B6/126 , G02B6/1228 , G02B6/14 , G02B6/2766 , G02B6/2861 , G02B2006/12061 , G02B2006/12097 , G02B2006/12147
摘要： Polarization rotators of conventional techniques require forming a silicon nitride layer, which is not employed in usual fabrication of a silicon waveguide circuit. In order to employ a polarization rotator function in an optical integrated circuit, a process of forming a silicon nitride layer is added just for that purpose. This increases the fabrication time and complicates the fabrication equipment. In a polarization rotator of the present invention, the waveguide width of a center core portion of a polarization converter is made small. Thus, the intensity of an optical wave does not concentrate only at the center core portion and is more influenced by structural asymmetry. With the configuration of the polarization rotator of the present invention, it is possible to efficiently cause polarization conversion with a structure including only a silicon waveguide and no silicon nitride layer or the like formed thereon.
摘要翻译：常规技术的极化旋转器需要形成氮化硅层，其不用于通常制造硅波导电路。为了在光学集成电路中采用偏振旋转器功能，仅为此目的添加形成氮化硅层的工艺。这增加了制造时间并使制造设备复杂化。在本发明的偏振旋转器中，极化转换器的中心芯部的波导宽度变小。因此，光波的强度不仅集中在中心芯部分，而且更受到结构不对称的影响。利用本发明的偏振旋转器的结构，可以通过仅形成硅波导并且不形成氮化硅层等的结构，有效地引起偏振转换。

9. 发明申请

US20180233618A1 PHOTODETECTOR 审中-公开
公开(公告)号：US20180233618A1
公开(公告)日：2018-08-16
申请号：US15751795
申请日：2016-08-28
申请人： Nippon Telegraph and Telephone Corporation
发明人： Hiroshi Fukuda , Shin Kamei , Ken Tsuzuki , Makoto Jizodo , Kiyofumi Kikuchi
IPC分类号： H01L31/102 , H01L31/0224 , H01L31/0264
摘要： A germanium photodetector which reduces a dark current without degradation of a photocurrent includes: a silicon substrate; a lower clad layer formed on the silicon substrate; a core layer formed on the lower clad layer; a p-type silicon slab formed in a part of the core layer and doped with a p-type impurity ion; p++ silicon electrode sections that are highly-doped with a p-type impurity and act as an electrode; and germanium layers which absorb light. The germanium photodetector further includes an upper clad layer, an n-type germanium region doped with an n-type impurity above the germanium layer, and an electrode. According to the present invention, two germanium layers are provided on the p-type silicon slab so as to miniaturize the area of the surface of the individual germanium layer in contact with the p-type silicon slab, so that the dark current due to threading dislocation can be reduced.

10. 发明申请

US20180143376A1 COHERENT OPTICAL MIXER CIRCUIT 审中-公开
公开(公告)号：US20180143376A1
公开(公告)日：2018-05-24
申请号：US15568610
申请日：2016-05-27
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： Shin Kamei , Makoto Jizodo , Hiroshi Fukuda , Kiyofumi Kikuchi , Ken Tsuzuki
IPC分类号： G02B6/125 , G02B6/126 , G02F2/00
CPC分类号： G02B6/125 , G02B6/00 , G02B6/126 , G02B6/2813 , G02F2/00 , G02F2/002 , H04J14/06
摘要： A coherent optical mixer circuit is provided that can measure a phase error without requiring a step of cutting away a delay circuit. Odd-numbered or even-numbered two of four inputs of an 4-input-and-4-output multimode interference circuit are connected to an input mechanism. The four outputs of the multimode interference circuit are all connected to an output mechanism to the exterior. Other two inputs of the multimode interference circuit are connected to two monitor waveguides. One of the monitor waveguide is longer than the other to configure a light delay circuit. The monitor waveguides constituting the light delay circuit are connected to the respective outputs of a 2-branched light splitter. The 2-branched light splitter has an input connected to a monitor light input mechanism from the exterior via a monitor input waveguide.

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