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1. 发明授权

US06383830B2 Optical component having a chemically etched guide with a ridge structure and its method of manufacture 有权
标题翻译：具有具有脊结构的化学蚀刻导向器的光学部件及其制造方法
公开(公告)号：US06383830B2
公开(公告)日：2002-05-07
申请号：US09789826
申请日：2001-02-22
申请人： Nicolas Bouche , Stéphane Lovisa
发明人： Nicolas Bouche , Stéphane Lovisa
IPC分类号： H01L2100
CPC分类号： G02B6/136 , G02B6/122 , G02B2006/12097 , G02B2006/12119
摘要： The present invention concerns an optical component having at least one guide with a ridge structure obtained by chemical etching on a substrate made of semiconductor material, the ridge having a base and a top face, the guide having an outline with at least one curved section, the tangent at any point on the outline defining the local orientation (&bgr;) of the guide. According to the invention, the width of the base (weff) of the ridge is substantially constant all along the guide and the width of the top face (w) of the ridge varies according to the local orientation (&bgr;) of the guide with respect to the reference crystallographic direction (R) of the substrate.
摘要翻译：本发明涉及一种光学部件，其具有至少一个引导件，该引导件具有通过在由半导体材料制成的基板上进行化学蚀刻获得的脊状结构，所述脊具有基部和顶面，所述引导件具有至少一个弯曲部分的轮廓，轮廓上的任何一点上的切线定义了指南的局部方向（β）。根据本发明，脊的基部的宽度（weff）基本上是恒定的，并且脊的顶面（w）的宽度根据引导件的局部取向（β）而变化，相对于到基板的参考晶体方向（R）。

2. 发明授权

US07805072B2 Wavelength division multiplex optical ring network for transmitting protected signals by local state switching following local interruption detection 有权
标题翻译：波分复用光环网，用于通过本地中断检测后的本地状态切换发送受保护信号
公开(公告)号：US07805072B2
公开(公告)日：2010-09-28
申请号：US10874281
申请日：2004-06-24
申请人： Stéphane Lovisa , Fabio Tassara , Francesco Shiavoni
发明人： Stéphane Lovisa , Fabio Tassara , Francesco Shiavoni
IPC分类号： G02B6/293 , G02B6/26 , H04B10/08
CPC分类号： H04J14/0295 , H04J14/0201 , H04J14/0283 , H04J14/0291
摘要： Wavelength division multiplex ring communication network equipment comprises a first multiplexer connected to a first optical fiber portion dedicated to transporting multiplexed signals and a second multiplexer connected to a second optical fiber portion. The equipment comprises signal protection circuitry connected to the first and second multiplexers and to a terminal which, in the event of local detection of interruption of signal transmission at a first wavelength on the first optical fiber portion, send the signals coming from the terminal to the second multiplexer at a second wavelength so that it communicates them to the second optical fiber portion, and sends to the terminal the signals that are addressed to it and that come from the second optical fiber portion at the second wavelength.
摘要翻译：波分复用环通信网络设备包括连接到专用于传输复用信号的第一光纤部分的第一多路复用器和连接到第二光纤部分的第二多路复用器。该设备包括连接到第一和第二多路复用器的信号保护电路和终端，在本地检测到第一光纤部分处的第一波长的信号传输中断的情况下，将从终端发送的信号发送到第二多路复用器，以使其与第二光纤部分通信，并将第二光纤部分的信号发送给终端，并且来自第二光纤部分的信号。

3. 发明授权

US06807212B2 Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US06807212B2
公开(公告)日：2004-10-19
申请号：US10283133
申请日：2002-10-30
申请人： Mauro Bettiati , Christophe Starck , Stéphane Lovisa
发明人： Mauro Bettiati , Christophe Starck , Stéphane Lovisa
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/2004 , H01S5/305 , H01S5/3409 , H01S5/3432 , H01S2301/18
摘要： The present invention provides a vertical structure semiconductor laser comprising bottom and top cladding layers (1, 2), a light guide (G) superposed on the bottom cladding layer, and a semiconductor active layer (CA). In the invention, the light guide (G) further comprises: a semiconductor bottom guide layer (11) having the following two adjacent bottom parts: an undoped first bottom part (11a) adjacent the central region, and an n-type doped second bottom part (11b) adjacent the bottom cladding layer, a semiconductor top guide layer (12) having the following two adjacent top parts: an undoped first top part (12a) adjacent the central region, and a p-type doped second top part (12b) adjacent the top cladding layer. The first bottom and top parts form a non-doped region (ND) more than 0.5 &mgr;m thick, and the refractive index difference (&Dgr;nopt) between one or each of the cladding layers and the adjacent guide layer is less than 0.02.
摘要翻译：本发明提供了一种垂直结构半导体激光器，其包括叠层在底部包层上的底部和顶部覆层（1,2），导光体（G）和半导体活性层（CA）。在本发明中，导光体（G）还包括：具有以下两个相邻底部的半导体底部引导层（11）：邻近中心区域的未掺杂的第一底部部分（11a），以及n型掺杂的第二底部部分（11b），具有以下两个相邻顶部的半导体顶部引导层（12）：邻近所述中心区域的未掺杂的第一顶部部分（12a）和相邻的p型掺杂的第二顶部部分（12b）第一底部和顶部形成大于0.5μm厚的非掺杂区域（ND），并且一个或每个包覆层和相邻引导层之间的折射率差（Deltanopt）小于 0.02。

4. 发明授权

US06944198B2 Semiconductor optical component 有权
标题翻译：半导体光学元件
公开(公告)号：US06944198B2
公开(公告)日：2005-09-13
申请号：US10309074
申请日：2002-12-04
申请人： Stéphane Lovisa
发明人： Stéphane Lovisa
IPC分类号： H01S5/02 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/00
CPC分类号： H01S5/22 , H01S5/2027 , H01S5/3213 , H01S2301/18
摘要： The laser type semiconductor optical component comprises: a semiconductor material substrate, a bottom cladding layer containing n-type carriers, an active layer forming one of more quantum wells, and a top cladding layer containing p-type carriers. To increase the emission power of the laser without increasing the vertical divergence of the beam, the bottom cladding layer has a higher refractive index than the top cladding layer. The lasers for pumping optical fiber amplifiers.
摘要翻译：激光型半导体光学部件包括：半导体材料基板，包含n型载流子的底部包层，形成多个量子阱中的一个的有源层和包含p型载流子的顶部包层。为了增加激光器的发射功率而不增加光束的垂直发散度，底部包层具有比顶部覆层更高的折射率。用于泵浦光纤放大器的激光器。

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