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1. 发明申请

US20080058577A1 Process for destruction of halogenated organic compounds in solids 有权
标题翻译：在固体中破坏卤代有机化合物的方法
公开(公告)号：US20080058577A1
公开(公告)日：2008-03-06
申请号：US11823855
申请日：2007-06-27
申请人： Ian Wylie , Nicola Dominelli , Keith Lee
发明人： Ian Wylie , Nicola Dominelli , Keith Lee
IPC分类号： A62D3/34 , B01J8/00
CPC分类号： A62D3/34 , A62D2101/22
摘要： The invention provides processes for decontamination of organic halides in asphalt-containing wastes, such as PCBs in asphaltic potting compounds. The processes may use hydrocarbon solvents to dissolve the asphaltic waste, and an alkali metal reactant, such as a sodium dispersion, to destroy the organic halides in the dissolved mixture.
摘要翻译：本发明提供了在含沥青的废物（例如沥青混合料中的多氯联苯）中去除有机卤化物的方法。这些方法可以使用烃溶剂来溶解沥青废物，以及碱金属反应物，例如钠分散体，以破坏溶解的混合物中的有机卤化物。

2. 发明申请

US20050233463A1 Method and device for the detection of SF6 decomposition products 审中-公开
标题翻译：检测SF6分解产物的方法和装置
公开(公告)号：US20050233463A1
公开(公告)日：2005-10-20
申请号：US11103583
申请日：2005-04-12
申请人： Nicola Dominelli , Ian Wylie , Keith Lee
发明人： Nicola Dominelli , Ian Wylie , Keith Lee
IPC分类号： G01N27/00 , G01N21/76 , G01N31/10 , G01N33/00 , G01N33/22 , H02B13/055
CPC分类号： G01N33/0042 , Y02A50/248 , Y10T436/18
摘要： This invention is in the field of gas detection for sulphur hexafluoride (SF6) gas decomposition products, particularly for the detection of thionyl fluoride (SOF2) and sulphur dioxide (SO2). The invention relates to a novel portable handheld instrument that can readily detect SOF2, SF4 and SO2 in SF6 gas filled electrical equipment and in air. An apparatus for detecting SF6 decomposition products comprising: (a) an inlet for receiving SF6 gas containing SOF2 or SF4; (b) A chamber connected to the inlet and containing a catalyst which converts SOF2 or SF4 into SO2; and (c) an SO2 detector connected downstream of the chamber.
摘要翻译：本发明涉及六氟化硫（SF 6）气体分解产物的气体检测领域，特别是用于检测亚硫酰氟（SOF 2 H 2）和二氧化硫（SO 2 ）。本发明涉及一种新颖的便携式手持式仪器，其可容易地检测到SF 6中的SOF 2，SF 4和SO 2 2 （b）连接到入口并包含将SOF 2或SF 4转化成SO 2的催化剂的室; 和（c）连接在室的下游的SO 2检测器。

3. 发明授权

US08561702B2 Hot fluid recovery of heavy oil with steam and carbon dioxide 有权
标题翻译：重油与蒸汽和二氧化碳的热流体回收
公开(公告)号：US08561702B2
公开(公告)日：2013-10-22
申请号：US12526392
申请日：2008-02-11
申请人： Ian Wylie , L. Allan McGuire , David L. Hagen , Gary D. Ginter
发明人： Ian Wylie , L. Allan McGuire , David L. Hagen , Gary D. Ginter
IPC分类号： E21B36/00
CPC分类号： E21B43/24
摘要： Combustion gases with relatively high levels of carbon dioxide (CO2), steam, and/or hot water, may be used to improve recovery of heavy hydrocarbons from geologic formations and/or from surface mined materials. These gases reduce the viscosity and/or increase hydrocarbon extraction rates through improvements in thermal efficiency and/or higher rates of heat delivery for a given combustor an capital investment. Such high water/CO2 content combustion gases can be formed by adding water to combustion gases formed by burning fuel. The pressure to inject the combustion gases and extract heavy hydrocarbons may be provided by diverting high pressure expanded gases from wet combustion in a gas turbine, or by reducing the pressure drop across a turbine and using the expanded hot gases for extraction.
摘要翻译：可以使用具有相对高水平的二氧化碳（CO 2），蒸汽和/或热水的燃烧气体来改善地质构造和/或来自表面开采材料的重质烃的回收。这些气体通过改善热效率和/或给定燃烧器的热输送速率来降低粘度和/或提高碳氢化合物的提取率。这种高水/二氧化碳含量的燃烧气体可以通过向燃烧燃料形成的燃烧气体中加入水而形成。注入燃烧气体并提取重质烃的压力可以通过将高压膨胀气体从燃气轮机中的湿式燃烧转移，或者通过减小涡轮机两端的压降和使用膨胀的热气体进行提取而提供。

4. 发明授权

US08232559B2 Controlling diamond film surfaces and layering 有权
公开(公告)号：US08232559B2
公开(公告)日：2012-07-31
申请号：US13018252
申请日：2011-01-31
申请人： Charles West , John Carlisle , James Netzel , Ian Wylie , Neil Kane
发明人： Charles West , John Carlisle , James Netzel , Ian Wylie , Neil Kane
IPC分类号： H01L29/15
CPC分类号： H01L29/1602 , B81C1/0015 , H01L21/02527 , H01L21/02595 , H01L21/30625 , H01L21/3105
摘要： A method comprising: providing at least one first diamond film comprising polycrystalline diamond, e.g., nanocrystalline or ultrananocrystalline diamond, disposed on a substrate, wherein the first diamond film comprises a surface comprising diamond asperities and having a first diamond film thickness, removing asperities from the first diamond film to form a second diamond film having a second diamond film thickness, wherein the second thickness is either substantially the same as the first thickness, or the second thickness is about 100 nm or less thinner than the first diamond film thickness, optionally patterning the second diamond film to expose substrate regions and, optionally, depositing semiconductor material on the exposed substrate regions, and depositing a solid layer on the second diamond film to form a first layered structure. Applications include for example dielectric isolation in the semiconductor industry, as well as surface acoustic wave devices, scanning probe microscope, and atomic force microscope devices.

5. 发明申请

US20110186942A1 CONTROLLING DIAMOND FILM SURFACES AND LAYERING 有权
标题翻译：控制金刚石薄膜表面和层
公开(公告)号：US20110186942A1
公开(公告)日：2011-08-04
申请号：US13018252
申请日：2011-01-31
申请人： Charles West , John Carlisle , James Netzel , Ian Wylie , Neil Kane
发明人： Charles West , John Carlisle , James Netzel , Ian Wylie , Neil Kane
IPC分类号： H01L27/12 , H01L29/66 , B82Y15/00 , B82Y99/00
CPC分类号： H01L29/1602 , B81C1/0015 , H01L21/02527 , H01L21/02595 , H01L21/30625 , H01L21/3105
摘要： A method comprising: providing at least one first diamond film comprising polycrystalline diamond, e.g., nanocrystalline or ultrananocrystalline diamond, disposed on a substrate, wherein the first diamond film comprises a surface comprising diamond asperities and having a first diamond film thickness, removing asperities from the first diamond film to form a second diamond film having a second diamond film thickness, wherein the second thickness is either substantially the same as the first thickness, or the second thickness is about 100 nm or less thinner than the first diamond film thickness, optionally patterning the second diamond film to expose substrate regions and, optionally, depositing semiconductor material on the exposed substrate regions, and depositing a solid layer on the second diamond film to form a first layered structure. Applications include for example dielectric isolation in the semiconductor industry, as well as surface acoustic wave devices, scanning probe microscope, and atomic force microscope devices.
摘要翻译：一种方法，包括：提供至少一个第一金刚石膜，其包括设置在基底上的多晶金刚石，例如纳米晶体或超微晶金刚石，其中所述第一金刚石膜包括包含金刚石凹凸并具有第一金刚石膜厚度的表面，第一金刚石膜以形成具有第二金刚石膜厚度的第二金刚石膜，其中所述第二厚度或者与所述第一厚度基本相同，或者所述第二厚度比所述第一金刚石膜厚度薄约100nm或更薄，所述第二金刚石膜暴露衬底区域和任选地在所述暴露的衬底区域上沉积半导体材料，以及在所述第二金刚石膜上沉积固体层以形成第一层状结构。应用包括例如半导体工业中的介电隔离以及表面声波器件，扫描探针显微镜和原子力显微镜器件。

6. 发明申请

US20060273871A1 Carbon nanotube-based electronic switch 失效
标题翻译：基于碳纳米管的电子开关
公开(公告)号：US20060273871A1
公开(公告)日：2006-12-07
申请号：US11084287
申请日：2005-03-18
申请人： Heinz Busta , Ian Wylie , Gary Snider
发明人： Heinz Busta , Ian Wylie , Gary Snider
IPC分类号： H01H51/22
CPC分类号： H01H1/0094 , Y10S977/709 , Y10S977/731 , Y10S977/743 , Y10S977/745 , Y10S977/932
摘要： An improved microelectromechanical switch assembly comprises a linearly movable switch rod constrained via a switch bearing, the switch rod being actuated by electrostatic deflection. Movement of the switch rod to one end of its travel puts the switch assembly in a closed state while movement of the switch rod to the other end of its travel puts the switch assembly in an open state. In an embodiment of the invention, one or both of the switch rod and the switch bearing are fabricated of a carbon nanotube. The improved microelectromechanical switch assembly provides low insertion loss and long lifetime in an embodiment of the invention.
摘要翻译：改进的微机电开关组件包括通过开关轴承限制的线性可移动开关杆，开关杆由静电偏转致动。开关杆移动到其行程的一端时，开关组件处于关闭状态，而开关杆移动到其行程的另一端则使开关组件处于打开状态。在本发明的一个实施例中，开关杆和开关轴承中的一个或两个由碳纳米管制成。改进的微机电开关组件在本发明的实施例中提供低插入损耗和长寿命。

7. 发明授权

US06853048B1 Bipolar transistor having an isolation structure located under the base, emitter and collector and a method of manufacture thereof 失效
标题翻译：具有位于基极，发射极和集电极之下的隔离结构的双极晶体管及其制造方法
公开(公告)号：US06853048B1
公开(公告)日：2005-02-08
申请号：US09637496
申请日：2000-08-11
申请人： Ian Wylie
发明人： Ian Wylie
IPC分类号： H01L21/331 , H01L27/06 , H01L29/06 , H01L29/417 , H01L29/735 , H01L29/00 , H01L27/082
CPC分类号： H01L29/6625 , H01L27/0623 , H01L29/0649 , H01L29/0692 , H01L29/41708 , H01L29/735
摘要： The present invention provides a bipolar transistor and a method of manufacture thereof. The bipolar transistor includes a dielectric region located in a semiconductor substrate and a collector located in the semiconductor substrate and at least partially over the dielectric region. The bipolar transistor device further includes a base located over and in contact with the dielectric region and at least partially about the collector and an emitter located over and in contact with the dielectric region and adjacent the base.
摘要翻译：本发明提供一种双极晶体管及其制造方法。双极晶体管包括位于半导体衬底中的电介质区域和位于半导体衬底中且至少部分地位于电介质区域上的集电极。双极晶体管器件还包括位于电介质区域上方且与电介质区域接触并且至少部分地围绕集电极的基极和位于电介质区域上方并与电介质区域相邻并邻近基极的发射极。

8. 发明授权

US08227350B2 Controlling diamond film surfaces and layering 有权
标题翻译：控制金刚石薄膜表面和分层
公开(公告)号：US08227350B2
公开(公告)日：2012-07-24
申请号：US12348240
申请日：2009-01-02
申请人： Charles West , John Carlisle , James Netzel , Ian Wylie , Neil Kane
发明人： Charles West , John Carlisle , James Netzel , Ian Wylie , Neil Kane
IPC分类号： H01L21/304
CPC分类号： H01L29/1602 , B81C1/0015 , H01L21/02527 , H01L21/02595 , H01L21/30625 , H01L21/3105
摘要： A method comprising: providing at least one first diamond film comprising polycrystalline diamond, e.g., nanocrystalline or ultrananocrystalline diamond, disposed on a substrate, wherein the first diamond film comprises a surface comprising diamond asperities and having a first diamond film thickness, removing asperities from the first diamond film to form a second diamond film having a second diamond film thickness, wherein the second thickness is either substantially the same as the first thickness, or the second thickness is about 100 nm or less thinner than the first diamond film thickness, optionally patterning the second diamond film to expose substrate regions and, optionally, depositing semiconductor material on the exposed substrate regions, and depositing a solid layer on the second diamond film to form a first layered structure. Applications include for example dielectric isolation in the semiconductor industry, as well as surface acoustic wave devices, scanning probe microscope, and atomic force microscope devices.
摘要翻译：一种方法，包括：提供至少一个第一金刚石膜，其包括设置在基底上的多晶金刚石，例如纳米晶体或超微晶金刚石，其中所述第一金刚石膜包括包含金刚石凹凸并具有第一金刚石膜厚度的表面，第一金刚石膜以形成具有第二金刚石膜厚度的第二金刚石膜，其中所述第二厚度或者与所述第一厚度基本相同，或者所述第二厚度比所述第一金刚石膜厚度薄约100nm或更薄，所述第二金刚石膜暴露衬底区域和任选地在所述暴露的衬底区域上沉积半导体材料，以及在所述第二金刚石膜上沉积固体层以形成第一层状结构。应用包括例如半导体工业中的介电隔离以及表面声波器件，扫描探针显微镜和原子力显微镜器件。

9. 发明授权

US07814975B2 Heavy oil recovery with fluid water and carbon dioxide 有权
标题翻译：用流体水和二氧化碳重油回收
公开(公告)号：US07814975B2
公开(公告)日：2010-10-19
申请号：US12233503
申请日：2008-09-18
申请人： David L. Hagen , Ian Wylie , L. Allan McGuire , Gary Ginter
发明人： David L. Hagen , Ian Wylie , L. Allan McGuire , Gary Ginter
IPC分类号： E21B43/243
CPC分类号： E21B43/24
摘要： Diluted wet combustion forms a hot process fluid or VASTgas including carbon dioxide (CO2) and fluid water which is delivered to geologic formations and/or to surface mined materials to reduce the viscosity and/or increase hydrocarbon extraction. High water and/or CO2 content is achieved by reducing non-aqueous diluent and/or adding or recycling CO2. Power recovered from expanding the VASTgas may be used to pressurize the VASTgas for delivery by partial expansion through a Direct VAST cycle, and/or by diverting compressed oxidant through a parallel thermogenerator in a Diverted VAST cycle. Pressurized VASTgas may be injected into a well within the hydrocarbon formation or with mined material into a heavy hydrocarbon separator vessel to heat, mobilize, solubilize and/or extract heavy hydrocarbons. Light hydrocarbons may be mixed in with the hot process fluid to enhance hydrocarbon mobilization and recovery. Microwaves may further heat the VASTgas and/or hydrocarbon. Sulfur oxidation, calcining limestone and/or recycling may increase CO2. Oxygen enrichment may increase the specific power. VASTgas may be delivered through and back injection wells and/or production wells, and/or between sequential injection wells in alternating and/or paired zigzag formations with multiple wells per VAST combined heat and power recovery system.
摘要翻译：稀释的湿式燃烧形成热过程流体或包含二氧化碳（CO2）和流体水的VAST气体，其被输送到地质层和/或表面开采的材料以降低粘度和/或增加烃提取。通过减少非水稀释剂和/或添加或再循环CO 2来实现高水和/或CO 2含量。通过膨胀VAST气体回收的功率可用于通过直接VAST循环的部分膨胀和/或通过在分流VAST循环中的平行热发生器转移压缩的氧化剂来对VAST气体进行加压以进行递送。加压的VAST气体可以注入到烃地层内的井中或者被注入到重质烃分离器容器中以加热，动员，溶解和/或提取重质烃。轻烃可以与热过程流体混合以增强烃的动员和回收。微波可以进一步加热VAST气体和/或烃。硫氧化，煅烧石灰石和/或回收可能会增加二氧化碳。氧气浓缩可能会增加比功率。 VAST气体可以通过和注入井和/或生产井和/或在交替和/或配对的之字形地层中的顺序注入井之间通过每个VAST组合热和功率回收系统的多个井输送。

10. 发明申请

US20050277365A1 Real time polishing process monitoring 失效
标题翻译：实时抛光过程监控
公开(公告)号：US20050277365A1
公开(公告)日：2005-12-15
申请号：US10867087
申请日：2004-06-14
申请人： Jian Zhang , Ian Wylie
发明人： Jian Zhang , Ian Wylie
IPC分类号： B24B49/10 , B24B49/00
CPC分类号： B24B37/013 , B24B49/10
摘要： A technique for in situ monitoring of polishing processes and other material removal processes employs a quartz crystal nanobalance embedded in a wafer carrier. Material removed from the wafer is deposited upon the surface of the crystal. The resulting frequency shift of the crystal gives an indication of the amount of material removed, allowing determination of an instantaneous removal rate as well as a process endpoint. The deposition on the quartz crystal nanobalance may be controlled by an applied bias. Multiple quartz crystal nanobalances may be used. In a further embodiment of the invention, the quartz crystal nanobalance is used to detect defect-causing events, such as a scratches, during the polishing process.
摘要翻译：用于原位监测抛光工艺和其它材料去除工艺的技术采用嵌入在晶片载体中的石英晶体纳米天平。从晶片去除的材料沉积在晶体的表面上。所得到的晶体频移给出了去除材料量的指示，允许确定瞬时去除速率以及过程终点。可以通过施加的偏压来控制石英晶体纳米空间上的沉积。可以使用多个石英晶体纳米天平。在本发明的另一实施例中，在抛光过程中，使用石英晶体纳米天平来检测缺陷引起的事件，例如刮痕。

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