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1. 发明授权

US08536028B1 Self alignment and assembly fabrication method for stacking multiple material layers 有权
标题翻译：用于堆叠多个材料层的自对准和组装制造方法
公开(公告)号：US08536028B1
公开(公告)日：2013-09-17
申请号：US13738979
申请日：2013-01-10
申请人： National Tsing Hua University
发明人： Ming-Chang Lee , Chih-Kuo Tseng , Zhong-Da Tian
IPC分类号： H01L21/31
CPC分类号： H01L21/02455 , H01L21/02381 , H01L21/0242 , H01L21/0245 , H01L21/02488 , H01L21/02505 , H01L21/02532 , H01L21/02538 , H01L21/02658 , H01L33/007
摘要： The present invention relates to a self alignment and assembly fabrication method for stacking multiple material layers, wherein a variety of homogeneous/heterogeneous materials can be stacked on a substrate by this self alignment and assembly fabrication method, without using any epitaxial buffer layers or gradient buffer layers; Moreover, these stacked materials can be single crystal, polycrystalline or non-crystalline phase materials. So that, by applying this self alignment and assembly fabrication method to fabricate a multi-layer device, not only the material cost can be effectively reduced, but the wafer alignment problem existing in the conventional wafer bonding process can also be solved. In addition, in the present invention, rapid melting growth (RMG) is used for growing the multiple crystallized materials laterally and rapidly from the substrate surface by liquid phase epitaxy, therefore the thermal budget can be largely reduced when fabricating the multi-layer device.
摘要翻译：本发明涉及一种用于堆叠多个材料层的自对准和组装制造方法，其中可以通过该自对准和组装制造方法将各种均质/异质材料堆叠在衬底上，而不使用任何外延缓冲层或梯度缓冲液层; 此外，这些堆叠材料可以是单晶，多晶或非晶相材料。因此，通过应用该自对准和组装制造方法来制造多层器件，不仅可以有效地降低材料成本，而且可以解决传统晶片接合工艺中存在的晶片对准问题。此外，在本发明中，快速熔融生长（RMG）用于通过液相外延从基板表面横向和快速地生长多个结晶材料，因此在制造多层器件时可以大大减少热预算。

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