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1. 发明申请

US20170373064A1 HETEROGENEOUSLY INTEGRATED SEMICONDUCTOR DEVICE AND MANUCACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20170373064A1
公开(公告)日：2017-12-28
申请号：US15632391
申请日：2017-06-26
申请人： National Applied Research Laboratories , EPISTAR Corporation
发明人： Shih-Pang Chang , Guang-Li Luo , Szu-Hung Chen , Wen-Kuan Yeh , Jen-Inn Chyi , Meng-Yang Chen , Rong-Ren Lee , Shih-Chang Lee , Ta-Cheng Hsu
IPC分类号： H01L27/092 , H01L21/8238 , H01L29/16 , H01L29/20
CPC分类号： H01L27/0924 , H01L21/823821 , H01L29/16 , H01L29/161 , H01L29/20 , H01L29/66795 , H01L29/7853
摘要： A heterogeneously integrated semiconductor devices includes a base substrate; a Ge-containing film formed on the base substrate; a PMOSFET transistor having a first fin formed on the Ge-containing film; and a NMOSFET transistor having a second fin formed on the Ge-containing film; wherein the PMOSFET transistor and the NMOSFET transistor compose a CMOS transistor, and the first fin comprises Ge-containing material and the second fin comprises a Group III-V compound.

2. 发明申请

US20200303377A1 HETEROGENEOUSLY INTEGRATED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20200303377A1
公开(公告)日：2020-09-24
申请号：US16893348
申请日：2020-06-04
申请人： National Applied Research Laboratories , EPISTAR Corporation
发明人： Shih-Pang Chang , Guang-Li Luo , Szu-Hung Chen , Wen-Kuan Yeh , Jen-Inn Chyi , Meng-Yang Chen , Rong-Ren Lee , Shih-Chang Lee , Ta-Cheng Hsu
IPC分类号： H01L27/092 , H01L29/78 , H01L29/66 , H01L21/8238 , H01L29/16 , H01L29/20
摘要： A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.

3. 发明授权

US10134735B2 Heterogeneously integrated semiconductor device and manufacturing method thereof 有权
公开(公告)号：US10134735B2
公开(公告)日：2018-11-20
申请号：US15632391
申请日：2017-06-26
申请人： National Applied Research Laboratories , EPISTAR Corporation
发明人： Shih-Pang Chang , Guang-Li Luo , Szu-Hung Chen , Wen-Kuan Yeh , Jen-Inn Chyi , Meng-Yang Chen , Rong-Ren Lee , Shih-Chang Lee , Ta-Cheng Hsu
IPC分类号： H01L27/092 , H01L29/20 , H01L29/16 , H01L21/8238
摘要： A heterogeneously integrated semiconductor devices includes a base substrate; a Ge-containing film formed on the base substrate; a PMOSFET transistor having a first fin formed on the Ge-containing film; and a NMOSFET transistor having a second fin formed on the Ge-containing film; wherein the PMOSFET transistor and the NMOSFET transistor compose a CMOS transistor, and the first fin comprises Ge-containing material and the second fin comprises a Group III-V compound.

4. 发明授权

US11515307B2 Heterogeneously integrated semiconductor device and manufacturing method thereof 有权
公开(公告)号：US11515307B2
公开(公告)日：2022-11-29
申请号：US16893348
申请日：2020-06-04
申请人： National Applied Research Laboratories , EPISTAR Corporation
发明人： Shih-Pang Chang , Guang-Li Luo , Szu-Hung Chen , Wen-Kuan Yeh , Jen-Inn Chyi , Meng-Yang Chen , Rong-Ren Lee , Shih-Chang Lee , Ta-Cheng Hsu
IPC分类号： H01L21/8238 , H01L27/092 , H01L29/78 , H01L29/66 , H01L29/16 , H01L29/20 , H01L29/161
摘要： A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.

5. 发明授权

US10727231B2 Heterogeneously integrated semiconductor device and manufacturing method thereof 有权
公开(公告)号：US10727231B2
公开(公告)日：2020-07-28
申请号：US16159541
申请日：2018-10-12
申请人： National Applied Research Laboratories , EPISTAR Corporation
发明人： Shih-Pang Chang , Guang-Li Luo , Szu-Hung Chen , Wen-Kuan Yeh , Jen-Inn Chyi , Meng-Yang Chen , Rong-Ren Lee , Shih-Chang Lee , Ta-Cheng Hsu
IPC分类号： H01L29/16 , H01L29/20 , H01L29/161 , H01L27/092 , H01L29/78 , H01L29/66 , H01L21/8238
摘要： A heterogeneously integrated semiconductor device includes a substrate comprising a first material; a recess formed within the substrate and having a bottom portion with a first width, a top portion with a second width and a middle portion with a third width larger than the first width and the second width; and a first semiconductor layer filled in the bottom portion and including a second material different from the first material.

6. 发明申请

US20190043862A1 HETEROGENEOUSLY INTEGRATED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20190043862A1
公开(公告)日：2019-02-07
申请号：US16159541
申请日：2018-10-12
申请人： National Applied Research Laboratories , EPISTAR Corporation
发明人： Shih-Pang Chang , Guang-Li Luo , Szu-Hung Chen , Wen-Kuan Yeh , Jen-Inn Chyi , Meng-Yang Chen , Rong-Ren Lee , Shih-Chang Lee , Ta-Cheng Hsu
IPC分类号： H01L27/092 , H01L29/16 , H01L21/8238 , H01L29/20 , H01L29/161
CPC分类号： H01L27/0924 , H01L21/823821 , H01L29/16 , H01L29/161 , H01L29/20 , H01L29/66795 , H01L29/7853
摘要： A heterogeneously integrated semiconductor device includes a substrate comprising a first material; a recess formed within the substrate and having a bottom portion with a first width, a top portion with a second width and a middle portion with a third width larger than the first width and the second width; and a first semiconductor layer filled in the bottom portion and including a second material different from the first material.

7. 发明申请

US20130082238A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20130082238A1
公开(公告)日：2013-04-04
申请号：US13630868
申请日：2012-09-28
申请人： Epistar Corporation
发明人： Min-Hsun Hsieh , Shih-Pang Chang , Hung-Chih Yang , Ta-Cheng Hsu
IPC分类号： H01L33/06 , H01L33/08
CPC分类号： H01L33/06 , H01L33/08 , H01L33/32
摘要： Disclosed is a light-emitting device, comprising: a first multi-quantum well structure comprising a plurality of first well layers and a first barrier layer stacked alternately, wherein the energy gap of the first barrier layer is larger than that of any one of the first well layers; a second multi-quantum well structure comprising a plurality of second well layers and a second barrier layer stacked alternately, wherein the energy gap of the second barrier layer is larger than that of any one of the second well layers; and a third barrier layer disposed between the first multi-quantum well structure and the second multi-quantum well structure, and the third barrier layer connected with the first well layer and the second well layer, wherein the energy gap of the third barrier layer is larger than that of any one of the first well layers and the second well layers, and the thickness of the third barrier layer is larger than that of any one of the first barrier layer and the second barrier layer.
摘要翻译：公开了一种发光器件，包括：第一多量子阱结构，包括交替堆叠的多个第一阱层和第一势垒层，其中第一势垒层的能隙大于第一井层; 第二多量子阱结构，其包括交替堆叠的多个第二阱层和第二势垒层，其中所述第二阻挡层的所述能隙大于所述第二阱层中的任一个的能隙; 以及设置在第一多量子阱结构和第二多量子阱结构之间的第三势垒层，以及与第一阱层和第二阱层连接的第三势垒层，其中第三势垒层的能隙为大于第一阱层和第二阱层中的任一个阱的厚度，并且第三阻挡层的厚度大于第一势垒层和第二势垒层中的任一个的厚度。

8. 发明授权

US08772791B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08772791B2
公开(公告)日：2014-07-08
申请号：US13630868
申请日：2012-09-28
申请人： Epistar Corporation
发明人： Min-Hsun Hsieh , Shih-Pang Chang , Hung-Chih Yang , Ta-Cheng Hsu
IPC分类号： H01L27/15 , H01L33/06 , H01L33/08 , H01L33/32
CPC分类号： H01L33/06 , H01L33/08 , H01L33/32
摘要： Disclosed is a light-emitting device, comprising: a first multi-quantum well structure comprising a plurality of first well layers and a first barrier layer stacked alternately, wherein the energy gap of the first barrier layer is larger than that of any one of the first well layers; a second multi-quantum well structure comprising a plurality of second well layers and a second barrier layer stacked alternately, wherein the energy gap of the second barrier layer is larger than that of any one of the second well layers; and a third barrier layer disposed between the first multi-quantum well structure and the second multi-quantum well structure, and the third barrier layer connected with the first well layer and the second well layer, wherein the energy gap of the third barrier layer is larger than that of any one of the first well layers and the second well layers, and the thickness of the third barrier layer is larger than that of any one of the first barrier layer and the second barrier layer.
摘要翻译：公开了一种发光器件，包括：第一多量子阱结构，包括交替堆叠的多个第一阱层和第一势垒层，其中第一势垒层的能隙大于第一井层; 第二多量子阱结构，其包括交替堆叠的多个第二阱层和第二势垒层，其中所述第二阻挡层的所述能隙大于所述第二阱层中的任一个的能隙; 以及设置在第一多量子阱结构和第二多量子阱结构之间的第三势垒层，以及与第一阱层和第二阱层连接的第三势垒层，其中第三势垒层的能隙为大于第一阱层和第二阱层中的任一个阱的厚度，并且第三阻挡层的厚度大于第一势垒层和第二势垒层中的任一个的厚度。

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