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1. 发明授权

US08673790B2 Method of manufacturing a semiconductor device, method of cleaning a process vessel, and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法，清洗处理容器的方法以及基板处理装置
公开(公告)号：US08673790B2
公开(公告)日：2014-03-18
申请号：US13155997
申请日：2011-06-08
申请人： Naonori Akae , Yoshiro Hirose , Kotaro Murakami
发明人： Naonori Akae , Yoshiro Hirose , Kotaro Murakami
IPC分类号： H01L21/30
CPC分类号： H01L21/02167 , C23C16/4405 , C23C16/52 , H01L21/0228 , H01L21/31116 , H01L21/32135
摘要： A method of manufacturing a semiconductor device includes supplying a process gas into a process vessel accommodating a substrate to form a thin film on the substrate and supplying a cleaning gas into the process vessel to clean an inside of the process vessel, after the supplying the process gas to form the thin film is performed a predetermined number of times. When cleaning the inside of the process vessel, a fluorine-containing gas, an oxygen-containing gas and a hydrogen-containing gas are supplied as the cleaning gas into the process vessel heated and kept at a pressure less than an atmospheric pressure to remove a deposit including the thin film adhering to the inside of the process vessel through a thermochemical reaction.
摘要翻译：一种制造半导体器件的方法包括：将处理气体供应到容纳衬底的处理容器中，以在衬底上形成薄膜，并在提供过程之后将清洁气体供应到处理容器中以清洁处理容器的内部进行预定次数的形成薄膜的气体。当清洁处理容器的内部时，将含氟气体，含氧气体和含氢气体作为清洁气体供应到加热并保持在低于大气压的压力下的处理容器中以除去通过热化学反应沉积包括附着在处理容器内部的薄膜。

2. 发明授权

US08895457B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US08895457B2
公开(公告)日：2014-11-25
申请号：US13582861
申请日：2011-02-18
申请人： Naonori Akae , Kotaro Murakami , Yoshiro Hirose , Kenji Kameda
发明人： Naonori Akae , Kotaro Murakami , Yoshiro Hirose , Kenji Kameda
IPC分类号： C23C16/34 , C23C16/40 , B08B5/00 , H01L21/31 , C23C16/00 , C23C16/44 , C23C16/30 , C23C16/455 , H01L21/02
CPC分类号： C23C16/4405 , C23C16/30 , C23C16/345 , C23C16/347 , C23C16/402 , C23C16/45531 , H01L21/02126 , H01L21/0228 , Y10S438/905
摘要： To provide a method of manufacturing a semiconductor device, including: forming a thin film different from a silicon oxide film on a substrate by supplying a processing gas into a processing vessel in which the substrate is housed; removing a deposit including the thin film adhered to an inside of the processing vessel by supplying a fluorine-containing gas into the processing vessel after executing forming the thin film prescribed number of times; and forming a silicon oxide film having a prescribed film thickness on the inside of the processing vessel by alternately supplying a silicon-containing gas, and an oxygen-containing gas and a hydrogen-containing gas into the heated processing vessel in which a pressure is set to be less than an atmospheric pressure after removing the deposit.
摘要翻译：提供一种制造半导体器件的方法，包括：通过将处理气体供应到容纳衬底的处理容器中，在衬底上形成与氧化硅膜不同的薄膜; 通过在执行规定次数的薄膜之后，通过在处理容器中供给含氟气体，除去附着在处理容器内部的薄膜的沉积物; 通过在加压处理容器中交替地供给含硅气体和含氧气体和含氢气体，在处理容器的内部形成具有规定膜厚度的氧化硅膜在去除沉积物之后要小于大气压力。

3. 发明申请

US20130017685A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：US20130017685A1
公开(公告)日：2013-01-17
申请号：US13582861
申请日：2011-02-18
申请人： Naonori Akae , Kotaro Murakami , Yoshiro Hirose , Kenji Kameda
发明人： Naonori Akae , Kotaro Murakami , Yoshiro Hirose , Kenji Kameda
IPC分类号： H01L21/316 , H01L21/311
CPC分类号： C23C16/4405 , C23C16/30 , C23C16/345 , C23C16/347 , C23C16/402 , C23C16/45531 , H01L21/02126 , H01L21/0228 , Y10S438/905
摘要： To provide a method of manufacturing a semiconductor device, including: forming a thin film different from a silicon oxide film on a substrate by supplying a processing gas into a processing vessel in which the substrate is housed; removing a deposit including the thin film adhered to an inside of the processing vessel by supplying a fluorine-containing gas into the processing vessel after executing forming the thin film prescribed number of times; and forming a silicon oxide film having a prescribed film thickness on the inside of the processing vessel by alternately supplying a silicon-containing gas, and an oxygen-containing gas and a hydrogen-containing gas into the heated processing vessel in which a pressure is set to be less than an atmospheric pressure after removing the deposit.
摘要翻译：提供一种制造半导体器件的方法，包括：通过将处理气体供应到容纳衬底的处理容器中，在衬底上形成与氧化硅膜不同的薄膜; 通过在执行规定次数的薄膜之后，通过在处理容器中供给含氟气体，除去附着在处理容器内部的薄膜的沉积物; 通过在加压处理容器中交替地供给含硅气体和含氧气体和含氢气体，在处理容器的内部形成具有规定膜厚度的氧化硅膜在去除沉积物之后要小于大气压力。

4. 发明申请

US20060235076A1 Medicinal composition for treating infection with drug-resistant staphylococcus aureus 审中-公开
标题翻译：用于治疗耐药性金黄色葡萄球菌感染的药物组合物
公开(公告)号：US20060235076A1
公开(公告)日：2006-10-19
申请号：US10543336
申请日：2004-01-28
申请人： Tomihiko Higuchi , Hirofumi Shibata , Yoichi Sato , Nobuhisa Takaishi , Kazuyoshi Kawazoe , Kotaro Murakami
发明人： Tomihiko Higuchi , Hirofumi Shibata , Yoichi Sato , Nobuhisa Takaishi , Kazuyoshi Kawazoe , Kotaro Murakami
IPC分类号： A61K31/235
CPC分类号： A61K31/546 , A61K31/235 , A61K31/353 , A61K31/43 , A61K31/431 , A61K31/545 , A61K36/48 , A61K2300/00
摘要： The invention relates to a therapy of an infection with a drug resistant bacterium wherein a characteristic of multivalent phenol derivatives and/or extracts from “Tara” which enhance the activity of β-lactam antibiotics on the drug resistant bacteria is utilized. Specifically, the invention relates to an enhancer of β-lactam antibiotics comprising a multivalent phenol derivative or its pharmaceutically acceptable salt, a pharmaceutical composition comprising a β-lactam antibiotic and a multivalent phenol derivative and/or extract from “Tara” for the therapy of an infection with a drug resistant bacterium, a disinfectant for the same, and a functional food comprising a multivalent phenol derivative and/or extract from “Tara”.
摘要翻译：本发明涉及一种耐药细菌感染的治疗方法，其中利用了增强β-内酰胺抗生素对耐药细菌活性的“塔拉”多价酚衍生物和/或提取物的特征。具体地，本发明涉及包含多价酚衍生物或其药学上可接受的盐的β-内酰胺抗生素增强剂，包含β-内酰胺抗生素和多价酚衍生物的药物组合物和/或“塔拉”用于治疗耐药细菌感染，其消毒剂，以及包含多价酚衍生物和/或“塔拉”提取物的功能性食品。

5. 发明授权

US08174310B2 Quadrature modulation demodulation circuit 有权
标题翻译：正交调制解调电路
公开(公告)号：US08174310B2
公开(公告)日：2012-05-08
申请号：US12861818
申请日：2010-08-23
申请人： Shingo Sakamoto , Kotaro Murakami
发明人： Shingo Sakamoto , Kotaro Murakami
IPC分类号： H03C1/00 , H03C3/00 , H03D1/00 , H03D3/00
CPC分类号： H04L27/3863
摘要： A quadrature demodulation circuit includes: first to fourth mixers to receive a modulation signal; a phase shifter to supply to the first and third mixers a first local frequency signal, to supply to the second mixer a second local frequency signal having a designated phase difference relative to the first local frequency signal, and to supply to the fourth mixer a third local frequency signal that is an inverse in phase to the second local frequency signal; a first adder to add a signal output from the first mixer and a signal output from the second mixer and to output a first demodulation signal; and a second adder to add a signal output from the third mixer and a signal output from the fourth mixer and to output a second demodulation signal.
摘要翻译：正交解调电路包括：第一至第四混频器，用于接收调制信号; 向所述第一和第三混频器提供第一本地频率信号的移相器，向所述第二混频器提供具有相对于所述第一本地频率信号的指定相位差的第二本地频率信号，以及向所述第四混频器提供第三本地频率信号，与第二本地频率信号相位相反的本地频率信号; 第一加法器，用于将从第一混频器输出的信号和从第二混频器输出的信号相加，并输出第一解调信号; 以及第二加法器，用于将从第三混频器输出的信号和从第四混频器输出的信号相加，并输出第二解调信号。

6. 发明授权

US4482706A Steroid saponins 失效
标题翻译：类固醇皂苷
公开(公告)号：US4482706A
公开(公告)日：1984-11-13
申请号：US491964
申请日：1983-04-20
申请人： Toshiaki Tomimatsu , Kotaro Murakami
发明人： Toshiaki Tomimatsu , Kotaro Murakami
IPC分类号： C07J13/00 , C07J71/00 , C07J17/00
CPC分类号： C07J13/005 , C07J71/0005
摘要： Novel steroid saponin compounds (XR-1) and (XR-2) are extracted from Solanam aculeatissimum, a plant belonging to the Solanum genus, and 16-dehydropregnenolone is obtained by hydrolyzing the said compounds, subjecting the hydrolyzed product to Marker's degradation, and treating the obtained product with aqueous alkali.
摘要翻译： PCT No.PCT / JP82 / 00384 Sec。 371日期：1983年4月20日 102（e）日期1983年4月20日PCT提交1982年9月24日PCT公布。公开号WO83 / 01065 PCT 日期：1983年3月31日。属于茄属的植物Solanam aculeatissimum提取出新的类固醇皂苷化合物（XR-1）和（XR-2），通过水解所述化合物获得16-脱氢孕烯醇酮，水解产物到标记降解，并用碱水处理所得产物。

7. 发明申请

US20110043277A1 QUADRATURE MODULATION DEMODULATION CIRCUIT 有权
标题翻译：二次调制解调电路
公开(公告)号：US20110043277A1
公开(公告)日：2011-02-24
申请号：US12861818
申请日：2010-08-23
申请人： Shingo Sakamoto , Kotaro Murakami
发明人： Shingo Sakamoto , Kotaro Murakami
IPC分类号： H04L27/38
CPC分类号： H04L27/3863
摘要： A quadrature demodulation circuit includes: first to fourth mixers to receive a modulation signal; a phase shifter to supply to the first and third mixers a first local frequency signal, to supply to the second mixer a second local frequency signal having a designated phase difference relative to the first local frequency signal, and to supply to the fourth mixer a third local frequency signal that is an inverse in phase to the second local frequency signal; a first adder to add a signal output from the first mixer and a signal output from the second mixer and to output a first demodulation signal; and a second adder to add a signal output from the third mixer and a signal output from the fourth mixer and to output a second demodulation signal.
摘要翻译：正交解调电路包括：第一至第四混频器，用于接收调制信号; 向所述第一和第三混频器提供第一本地频率信号的移相器，向所述第二混频器提供具有相对于所述第一本地频率信号的指定相位差的第二本地频率信号，以及向所述第四混频器提供第三本地频率信号，与第二本地频率信号相位相反的本地频率信号; 第一加法器，用于将从第一混频器输出的信号和从第二混频器输出的信号相加，并输出第一解调信号; 以及第二加法器，用于将从第三混频器输出的信号和从第四混频器输出的信号相加，并输出第二解调信号。

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