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1. 发明授权

US5068706A Semiconductor device with fuse function 失效
标题翻译：具有保险丝功能的半导体器件
公开(公告)号：US5068706A
公开(公告)日：1991-11-26
申请号：US478536
申请日：1990-02-12
申请人： Naomasa Sugita , Yoshiharu Yotumoto , Kouji Moriguchi , Toshinobu Sekiba
发明人： Naomasa Sugita , Yoshiharu Yotumoto , Kouji Moriguchi , Toshinobu Sekiba
IPC分类号： H01L25/07 , H01H85/02 , H01H85/06 , H01H85/08 , H01H85/11 , H01H85/17 , H01H85/20 , H01H85/46 , H01L23/28 , H01L23/62
CPC分类号： H01L23/62 , H01H2085/0283 , H01L2924/0002
摘要： A semiconductor device includes a radiation plate, first and second conductive patterns formed on one surface of the radiation plate, a first semiconductor element fixed on and connected to the first conductive pattern, a second semiconductor element fixed on and connected to the second conductive pattern, a conductive member for connecting the first and second semiconductor elements to each other, a first external terminal electrically connected to the first conductive pattern, a second external terminal electrically connected to the second conductive pattern, a third external terminal electrically connected to the conductive member, and an outer casing, which is filled with epoxy resin, for enclosing the semiconductor elements and the first to third external terminals. Part of each of the first to third external terminals is exposed to an exterior of the casing. At least one of the conductive member, first external terminal, second external terminal, and third external terminal includes a hollow fuse.

2. 发明授权

US4943842A Semiconductor device with fuse function 失效
标题翻译：带保险丝功能的半导体器件
公开(公告)号：US4943842A
公开(公告)日：1990-07-24
申请号：US166002
申请日：1988-03-09
申请人： Naomasa Sugita , Yoshiharu Yotumoto , Kouji Moriguchi , Toshinobu Sekiba
发明人： Naomasa Sugita , Yoshiharu Yotumoto , Kouji Moriguchi , Toshinobu Sekiba
IPC分类号： H01L25/07 , H01H85/02 , H01H85/06 , H01H85/08 , H01H85/11 , H01H85/17 , H01H85/20 , H01H85/46 , H01L23/28 , H01L23/62
CPC分类号： H01L23/62 , H01H2085/0283 , H01L2924/0002
摘要： A semiconductor device includes a radiation plate, first and second conductive patterns formed on one surface of the radiation plate, a first semiconductor element fixed on and connected to the first conductive pattern, a second semiconductor element fixed on and connected to the second conductive pattern, a conductive member for connecting the first and second semiconductor elements to each other, a first external terminal electrically connected to the first conductive pattern, a second external terminal electrically connected to the second conductive pattern, a third external terminal electrically connected to the conductive member, and an outer casing, which is filled wiht epoxy resin, for enclosing the semiconductor elements and the first to third external terminals. Part of each of the first to third external terminals is exposed to an exterior of the casing. At least one of the conductive member, first external terminal, second external terminal, and third external terminal includes a hollow fuse.

3. 发明授权

US5017976A Semiconductor device having intermediate layer for pinching off conductive path during reverse bias application 失效
标题翻译：具有用于在反偏压施加期间夹断导电路径的中间层的半导体器件
公开(公告)号：US5017976A
公开(公告)日：1991-05-21
申请号：US443333
申请日：1989-11-30
申请人： Naomasa Sugita
发明人： Naomasa Sugita
IPC分类号： H01L29/47 , H01L29/861 , H01L29/872
CPC分类号： H01L29/872
摘要： A semiconductor device comprising a semiconductor substrate having two major surfaces a cathode electrode film formed on the first major surface of the substrate, and an anode electrode film formed on the second major surface of the substrate. The substrate is formed of an N.sup.+ -type layer formed on the cathode electrode film, an N.sup.- -type layer formed on the N.sup.+ -type layer, and N.sup.-- -type layer formed on the N.sup.- -type layer and having an impurity concentration lower than that of the N.sup.- -type layer, and an N.sup.- -type layer interposed between the N.sup.-- -type layer and the anode electrode film. The device further comprises a plurality of P.sup.+ -type areas formed in the second major surface of the substrate, contacting the anode electrode film and extending through the N.sup.- -type layer and the N.sup.-- -type layer into the N.sup.- -type layer. When a forward bias is applied to the device, a current flows from the anode electrode film, passes through the N.sup.- -, N.sup.-- -, N.sup.- - and the N.sup.+ -type layers, and flows out of the cathode electrode film. When a reverse bias is applied to the device, the depletion layer formed around the junction between each P.sup.+ -type area and the N.sup.-- -type layer extends, and joins with the similar depletion layers, thereby pinching off the current path. As a result, the reverse leakage current is reduced.

4. 发明授权

US5148241A Method of manufacturing a Schottky diode device 失效
标题翻译：制造肖特基二极管器件的方法
公开(公告)号：US5148241A
公开(公告)日：1992-09-15
申请号：US626460
申请日：1990-12-12
申请人： Naomasa Sugita
发明人： Naomasa Sugita
IPC分类号： H01L29/861 , H01L21/329 , H01L23/482 , H01L29/47 , H01L29/872
CPC分类号： H01L29/66143 , H01L23/4827 , H01L29/872 , H01L2224/04026 , H01L2924/12032 , Y10S257/91
摘要： A Schottky diode device can be fabricated by forming a positive resist layer on an insulating layer formed on N type substrate, and patterning the resist layer. The pattern in the resist includes (i) a first isolation region-defining annular open pattern defining therewithin a device-forming region having a predetermined size, (ii) a second isolation region-defining open pattern dividing the device-forming region into a plurality of unit regions each having a maximum size defined to be 500 .mu.m or less, and (iii) a plurality of individual openings having a size of 1 .mu.m or less and arranged at a predetermined pitch in each of the unit regions. The patterned resist is used to pattern the insulating layer, and P type impurity regions including individual regions are formed using the patterned insulating layer as a mask. After removing the insulating layer, a barrier metal is formed forms Schottky barrier diodes with the individual P type impurity regions and connect them in parallel.

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