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1. 发明申请

US20080013221A1 THIN-FILM MAGNETIC HEAD, MAGNETIC HEAD ASSEMBLY, MAGNETIC DISK DRIVE APPARATUS AND METHOD FOR MANUFACTURING THIN-FILM MAGNETIC HEAD 有权
标题翻译：薄膜磁头，磁头组件，磁盘驱动装置及制造薄膜磁头的方法
公开(公告)号：US20080013221A1
公开(公告)日：2008-01-17
申请号：US11760149
申请日：2007-06-08
申请人： Naoki OHTA , Kosuke Tanaka , Takayasu Kanaya , Kazuki Sato , Yasufumi Uno , Tetsuya Kuwashima
发明人： Naoki OHTA , Kosuke Tanaka , Takayasu Kanaya , Kazuki Sato , Yasufumi Uno , Tetsuya Kuwashima
IPC分类号： G11B5/11
CPC分类号： G11B5/31 , B82Y10/00 , B82Y25/00 , G11B5/112 , G11B5/3163 , G11B5/3909 , G11B5/3912 , G11B5/3967 , G11B5/398
摘要： The present invention relates to a thin-film magnetic head which prevents leakage of magnetic fluxes from an edge area of a lower and/or an upper shield layers of a magnetoresistive effect read head element. The thin-film magnetic head have a magnetoresistive effect read head element that includes a lower shield layer, an upper shield layer, a magnetoresistive effect layer, which is formed between the lower shield layer and the upper shield layer, and a lower antiferromagnetic layer which is contacted with the lower shield layer only at an edge area of the lower shield layer.
摘要翻译：本发明涉及一种防止磁通从磁阻效应读头元件的下屏蔽层和/或上屏蔽层的边缘区域泄漏的薄膜磁头。薄膜磁头具有磁阻效应读头元件，其包括形成在下屏蔽层和上屏蔽层之间的下屏蔽层，上屏蔽层，磁阻效应层和下反铁磁层，仅在下屏蔽层的边缘区域与下屏蔽层接触。

2. 发明授权

US08125743B2 Thin-film magnetic head, magnetic head assembly, magnetic disk drive apparatus and method for manufacturing thin-film magnetic head 有权
标题翻译：薄膜磁头，磁头组件，磁盘驱动装置及制造薄膜磁头的方法
公开(公告)号：US08125743B2
公开(公告)日：2012-02-28
申请号：US11760149
申请日：2007-06-08
申请人： Naoki Ohta , Kosuke Tanaka , Takayasu Kanaya , Kazuki Sato , Yasufumi Uno , Tetsuya Kuwashima
发明人： Naoki Ohta , Kosuke Tanaka , Takayasu Kanaya , Kazuki Sato , Yasufumi Uno , Tetsuya Kuwashima
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/31 , B82Y10/00 , B82Y25/00 , G11B5/112 , G11B5/3163 , G11B5/3909 , G11B5/3912 , G11B5/3967 , G11B5/398
摘要： A thin-film magnetic head has a magnetoresistive effect read head element. The magnetoresistive effect read head element includes a lower shield layer, an upper shield layer, and a magnetoresistive effect layer formed between the lower shield layer and the upper shield layer. The magnetoresistive effect read head element also includes a lower antiferromagnetic layer. The lower antiferromagnetic layer is contacted with the lower shield layer only at an edge area of the lower shield layer.
摘要翻译：薄膜磁头具有磁阻效应读头元件。磁阻效应读头元件包括下屏蔽层，上屏蔽层和形成在下屏蔽层和上屏蔽层之间的磁阻效应层。磁阻效应读头元件还包括较低的反铁磁层。下反铁磁层仅在下屏蔽层的边缘区域与下屏蔽层接触。

3. 发明授权

US07978438B2 Thin-film magnetic head with shield layer profile having obtuse or rounded corners, magnetic head assembly, magnetic disk drive apparatus and manufacturing method of thin-film magnetic head 有权
标题翻译：具有钝角或圆角的屏蔽层轮廓的薄膜磁头，磁头组件，磁盘驱动装置和薄膜磁头的制造方法
公开(公告)号：US07978438B2
公开(公告)日：2011-07-12
申请号：US11774912
申请日：2007-07-09
申请人： Naoki Ohta , Kosuke Tanaka , Takayasu Kanaya , Kazuki Sato , Yasufumi Uno , Tetsuya Kuwashima
发明人： Naoki Ohta , Kosuke Tanaka , Takayasu Kanaya , Kazuki Sato , Yasufumi Uno , Tetsuya Kuwashima
IPC分类号： G11B5/39
CPC分类号： G11B5/3967 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3909 , G11B5/3912 , G11B2005/3996
摘要： A thin-film magnetic head provided with at least one MR read head element includes a lower shield layer, an upper shield layer, and an MR layer formed between the lower shield layer and the upper shield layer. A profile of the upper shield layer, appeared at an ABS, has obtuse or rounded upper corners at end edges of the upper shield layer along a track-width direction.
摘要翻译：设置有至少一个MR读取头元件的薄膜磁头包括下屏蔽层，上屏蔽层和形成在下屏蔽层和上屏蔽层之间的MR层。出现在ABS处的上屏蔽层的轮廓在沿着轨道宽度方向的上屏蔽层的端部边缘处具有钝角或圆形的上角。

4. 发明授权

US07933099B2 Thin-film magnetic head having electric lapping guide and method of making the same 有权
标题翻译：具有电动研磨导轨的薄膜磁头及其制造方法
公开(公告)号：US07933099B2
公开(公告)日：2011-04-26
申请号：US11783719
申请日：2007-04-11
申请人： Naoki Ohta , Tetsuya Kuwashima , Kazuki Sato , Kosuke Tanaka
发明人： Naoki Ohta , Tetsuya Kuwashima , Kazuki Sato , Kosuke Tanaka
IPC分类号： G11B5/33 , G11B5/39
CPC分类号： G11B5/3166 , G11B5/3169 , G11B5/3173 , G11B5/3903
摘要： A magnetic head having precisely controlled MR height has a slider substrate and a magnetic head part provided on the slider substrate. The magnetic head part includes, seeing from a medium-opposing surface side, a magnetism detecting element; an upper magnetic shield layer arranged on the magnetism detecting element; an electrode layer separated in a track width direction from the upper magnetic shield layer; and a conductor layer, arranged closer to the slider substrate than are the upper magnetic shield layer and electrode layer, extending in the track width direction so as to be in contact with the upper magnetic shield layer and electrode layer and forming a part of the medium-opposing surface.
摘要翻译：具有精确控制的MR高度的磁头具有滑块基板和设置在滑块基板上的磁头部。磁头部分包括从介质相对表面侧观察磁性检测元件; 布置在磁检测元件上的上磁屏蔽层; 沿着磁道宽度方向从上磁屏蔽层分离的电极层; 以及布置在比上磁屏蔽层和电极层更靠近滑块基板的导体层，其在磁道宽度方向上延伸以与上磁屏蔽层和电极层接触并形成介质的一部分表面。

5. 发明申请

US20080253033A1 Thin-film magnetic head having electric lapping guide and method of making the same 有权
标题翻译：具有电动研磨导轨的薄膜磁头及其制造方法
公开(公告)号：US20080253033A1
公开(公告)日：2008-10-16
申请号：US11783719
申请日：2007-04-11
申请人： Naoki Ohta , Tetsuya Kuwashima , Kazuki Sato , Kosuke Tanaka
发明人： Naoki Ohta , Tetsuya Kuwashima , Kazuki Sato , Kosuke Tanaka
IPC分类号： G11B5/33
CPC分类号： G11B5/3166 , G11B5/3169 , G11B5/3173 , G11B5/3903
摘要： A magnetic head in which the size of MR height is controlled precisely, a head gimbal assembly and a hard disk drive which are mounted with such a magnetic head, and a method of making a magnetic head in which the size of MR height is controlled precisely.The magnetic head in accordance with the present invention is a magnetic head comprising a slider substrate and a magnetic head part provided on the slider substrate; wherein the magnetic head part comprises, seeing from a medium-opposing surface side, a magnetism detecting element; an upper magnetic shield layer arranged on the magnetism detecting element; an electrode layer separated in a track width direction from the upper magnetic shield layer; and a conductor layer, arranged closer to the slider substrate than are the upper magnetic shield layer and electrode layer, extending in the track width direction so as to be in contact with the upper magnetic shield layer and electrode layer and forming a part of the medium-opposing surface.
摘要翻译：高精度地控制MR高度的磁头，安装有这种磁头的磁头万向架组件和硬盘驱动器以及制造磁头的方法，其中MR高度的尺寸被精确地控制。根据本发明的磁头是包括滑块基板和设置在滑块基板上的磁头部分的磁头; 其中所述磁头部分包括从介质相对表面侧观察磁性检测元件; 布置在磁检测元件上的上磁屏蔽层; 沿着磁道宽度方向从上磁屏蔽层分离的电极层; 以及布置在比上磁屏蔽层和电极层更靠近滑块基板的导体层，其在磁道宽度方向上延伸以与上磁屏蔽层和电极层接触并形成介质的一部分表面。

6. 发明授权

US07057859B2 Magneto-resistive device with reduced susceptibility to ion beam damage 失效
标题翻译：具有降低的离子束损伤敏感性的磁阻器件
公开(公告)号：US07057859B2
公开(公告)日：2006-06-06
申请号：US10600444
申请日：2003-06-23
申请人： Takeo Kagami , Kazuki Sato , Takayasu Kanaya , Shunji Saruki , Tetsuya Kuwashima
发明人： Takeo Kagami , Kazuki Sato , Takayasu Kanaya , Shunji Saruki , Tetsuya Kuwashima
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3106 , G11B5/313 , G11B5/3133 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996
摘要： A magneto-resistive device is improved in characteristics by removing a surface oxide film to reduce the resistance and reducing an ion beam damage. The magneto-resistive device has a magneto-resistive layer which comprises a tunnel barrier layer, an underlying pinned layer, and an overlying free layer. A non-magnetic layer is formed on the free layer for protection. A composite-layer film comprised of an insulating layer and a damage reducing layer is formed in contact with an effective region which is effectively involved in detection of magnetism in the magneto-resistive layer without overlapping with the effective region. The damage reducing layer is made of a material which includes at least one element, the atomic weight of which is larger than that of silicon. The insulating layer and damage reducing layer do not constitute a magnetic domain control layer for applying a biasing magnetic field to the free layer.
摘要翻译：通过去除表面氧化膜以降低电阻并减少离子束损伤，改善了磁阻元件的特性。磁阻装置具有磁阻层，其包括隧道阻挡层，下面的被钉扎层和上覆自由层。在自由层上形成非磁性层以进行保护。形成与绝缘层和损伤减少层组成的复合层膜与有效区域接触，该有效区域有效地涉及磁阻层中的磁性检测，而不与有效区域重叠。损伤减少层由包括至少一种元素的材料制成，其原子量大于硅的原子量。绝缘层和损伤降低层不构成用于向自由层施加偏置磁场的磁畴控制层。

7. 发明授权

US07672087B2 Magnetoresistive effect element having bias layer with internal stress controlled 有权
标题翻译：具有内部应力控制的偏置层的磁阻效应元件
公开(公告)号：US07672087B2
公开(公告)日：2010-03-02
申请号：US11691653
申请日：2007-03-27
申请人： Takayasu Kanaya , Katsuki Kurihara , Tetsuya Kuwashima
发明人： Takayasu Kanaya , Katsuki Kurihara , Tetsuya Kuwashima
IPC分类号： G11B5/39
CPC分类号： G11B5/3967 , B82Y25/00 , G01R33/093 , G11B5/3932
摘要： Provided is an MR effect element in which the magnetization of the pinned layer is stably fixed even after going through high temperature process. The MR effect element comprises: a non-magnetic intermediate layer; a pinned layer and a free layer stacked so as to sandwich the non-magnetic intermediate layer; an antiferromagnetic layer stacked to have a surface contact with the pinned layer, for fixing a magnetization of the pinned layer to a direction in-plane of the pinned layer and perpendicular to a track width direction; and hard bias layers provided on both sides in the track width direction of the free layer, for applying a bias field to the free layer, a product λS×σ of a saturation magnetostriction constant λS of the pinned layer and an internal stress σ on a cross-section perpendicular to a layer surface of the hard bias layer being negative.
摘要翻译：提供了一种MR效应元件，其中即使在经过高温处理之后，被钉扎层的磁化也被稳定地固定。 MR效应元件包括：非磁性中间层; 被钉扎层和层叠有非磁性中间层的自由层; 层叠以与被钉扎层表面接触的反铁磁层，用于将钉扎层的磁化固定到被钉扎层的平面内并垂直于轨道宽度方向; 以及设置在自由层的轨道宽度方向两侧的用于向自由层施加偏置场的硬偏压层，产品λS×＆sgr; 的钉扎层的饱和磁致伸缩常数λS和内部应力＆sgr; 在垂直于硬偏压层的层表面的横截面为负。

8. 发明申请

US20080239582A1 Magnetoresistive Effect Element Having Bias Layer With Internal Stress Controlled 有权
标题翻译：具有内部应力控制的偏置层的磁阻效应元件
公开(公告)号：US20080239582A1
公开(公告)日：2008-10-02
申请号：US11691653
申请日：2007-03-27
申请人： Takayasu Kanaya , Katsuki Kurihara , Tetsuya Kuwashima
发明人： Takayasu Kanaya , Katsuki Kurihara , Tetsuya Kuwashima
IPC分类号： G11B5/33
CPC分类号： G11B5/3967 , B82Y25/00 , G01R33/093 , G11B5/3932
摘要： Provided is an MR effect element in which the magnetization of the pinned layer is stably fixed even after going through high temperature process. The MR effect element comprises: a non-magnetic intermediate layer; a pinned layer and a free layer stacked so as to sandwich the non-magnetic intermediate layer; an antiferromagnetic layer stacked to have a surface contact with the pinned layer, for fixing a magnetization of the pinned layer to a direction in-plane of the pinned layer and perpendicular to a track width direction; and hard bias layers provided on both sides in the track width direction of the free layer, for applying a bias field to the free layer, a product λS×σ of a saturation magnetostriction constant λS of the pinned layer and an internal stress σ on a cross-section perpendicular to a layer surface of the hard bias layer being negative.
摘要翻译：提供了一种MR效应元件，其中即使在经过高温处理之后，被钉扎层的磁化也被稳定地固定。 MR效应元件包括：非磁性中间层; 被钉扎层和层叠有非磁性中间层的自由层; 层叠以与被钉扎层表面接触的反铁磁层，用于将钉扎层的磁化固定到被钉扎层的平面内并垂直于轨道宽度方向; 以及在自由层的轨道宽度方向上设置在两侧的硬偏压层，用于向自由层施加偏置场，饱和磁致伸缩常数λS的乘积λS s 被钉扎层的垂直于硬偏置层的层表面的横截面上的内部应力σ是负的。

9. 发明授权

US06669983B2 Manufacturing method of thin-film magnetic head with magnetoresistive effect element 失效
公开(公告)号：US06669983B2
公开(公告)日：2003-12-30
申请号：US10279125
申请日：2002-10-24
申请人： Takeo Kagami , Naoki Ohta , Tetsuya Kuwashima
发明人： Takeo Kagami , Naoki Ohta , Tetsuya Kuwashima
IPC分类号： B05D512
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B2005/3996
摘要： A manufacturing method of a thin-film magnetic head provided with an MR element includes a step of forming an MR multi-layered structure in which a current flows in a direction perpendicular to surfaces of layers of the MR multi-layered structure, on a lower electrode film, a step of depositing an insulation film on the formed MR multi-layered structure and the lower electrode film, a step of flattening the deposited insulation film until at least upper surface of the MR multi-layered structure is exposed, and a step of forming an upper electrode film on the flattened insulation film and the MR multi-layered structure.

10. 发明授权

US07436633B2 Thin-film magnetic head, head gimbal assembly and hard disk system 有权
标题翻译：薄膜磁头，磁头万向架组件和硬盘系统
公开(公告)号：US07436633B2
公开(公告)日：2008-10-14
申请号：US11205072
申请日：2005-08-17
申请人： Hiroshi Kiyono , Tetsuya Kuwashima , Takeo Kagami , Noriaki Kasahara , Naoki Ohta , Nozomu Hachisuka
发明人： Hiroshi Kiyono , Tetsuya Kuwashima , Takeo Kagami , Noriaki Kasahara , Naoki Ohta , Nozomu Hachisuka
IPC分类号： G11B5/245
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/31 , G11B5/3912 , G11B5/3967 , G11B5/4826 , G11B2005/3996
摘要： A parasitic capacity C4 generated between a slider substrate and the first shield layer with the first insulating layer as a capacity layer is made substantially equal to a parasitic capacity C2 occurring between a lower magnetic layer and the second shield layer with the third insulating layer as a capacity layer. Preferably, a connection is made between the lower magnetic layer and the slider substrate by a resistance of preferably 100 (Ω) or lower. Thus, it is possible to provide a thin-film magnetic head that can hold back deterioration in a reproducing device and the occurrence of errors due to crosstalk between a recording device and the reproducing device and extraneous noises.
摘要翻译：在第一绝缘层作为电容层的滑块基板与第一屏蔽层之间产生的寄生电容C 4大体上等于具有第三绝缘层的下磁层与第二屏蔽层之间的寄生电容C 2 作为容量层。优选地，通过优选100（Ω）或更低的电阻在下磁性层和滑块基板之间形成连接。因此，可以提供能够抑制再现装置中的劣化的薄膜磁头和由于记录装置与再现装置之间的串扰而引起的错误的发生以及无关的噪声。

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