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    • 1. 发明申请
    • BOLOMETER-TYPE THz-WAVE DETECTOR
    • BOLOMETER型太赫兹波检测器
    • US20080237469A1
    • 2008-10-02
    • US12056631
    • 2008-03-27
    • Naoki OdaSusumu KomiyamaIwao Hosako
    • Naoki OdaSusumu KomiyamaIwao Hosako
    • G01J5/02
    • G01J5/02G01J5/0215G01J5/0235G01J5/024G01J5/046G01J5/08G01J5/0809G01J5/0815G01J5/0837G01J5/20
    • In a bolometer-type THz-wave detector in a micro-bridge structure in which a temperature detecting portion (diaphragm) including a bolometer thin film is supported by a supporting portion in a state suspended from a circuit substrate, a member (dielectric cover) made of a dielectric material for efficiently collecting a THz wave is added to an upper part of the temperature detecting portion, and when a refractive index of the dielectric cover is n, thickness is t, and a wavelength of the THz wave is λ, a setting is made so as to have nt>λ, and a gap between the dielectric cover and the temperature detecting portion is set at integral multiples of λ/2. By this arrangement, an absorption of the THz wave can be improved using a structure and manufacturing method of a bolometer-type infrared detector, and a high-performance bolometer-type THz-wave detector can be manufactured with a high yield.
    • 在微型桥结构中的热辐射计式太赫兹波检测器中,其中包括测辐射热计薄膜的温度检测部分(隔膜)以悬挂于电路基板的状态由支撑部分支撑,构件(电介质盖) 由用于有效地收集太赫兹波的电介质材料添加到温度检测部分的上部,并且当电介质盖的折射率为n时,厚度为t,并且THz波的波长为λ,a 使nt>λ设定,电介质盖和温度检测部之间的间隔设为λ/ 2的整数倍。 通过这种布置,可以使用测辐射热计型红外线检测器的结构和制造方法来改善太赫兹波的吸收,并且可以以高产率制造高性能测辐射热计型THz波检测器。
    • 2. 发明授权
    • Bolometer-type THz-wave detector
    • 测辐射计型太赫兹波检测器
    • US07557349B2
    • 2009-07-07
    • US12056631
    • 2008-03-27
    • Naoki OdaSusumu KomiyamaIwao Hosako
    • Naoki OdaSusumu KomiyamaIwao Hosako
    • G01J5/02
    • G01J5/02G01J5/0215G01J5/0235G01J5/024G01J5/046G01J5/08G01J5/0809G01J5/0815G01J5/0837G01J5/20
    • In a bolometer-type THz-wave detector 1 in a micro-bridge structure in which a temperature detecting portion 14 (diaphragm) including a bolometer thin film 7 is supported by a supporting portion 13 in a state suspended from a circuit substrate, a member (dielectric cover 11) made of a dielectric material for efficiently collecting a THz wave is added to an upper part of the temperature detecting portion 14, and when a refractive index of the dielectric cover 11 is n, thickness is t, and a wavelength of the THz wave is λ, a setting is made so as to have at >λ, and a gap between the dielectric cover 11 and the temperature detecting portion 14 is set at integral multiples of λ/2. By this arrangement, an absorptance of the THz wave can be improved using a structure and manufacturing method of a bolometer-type infrared detector, and a high-performance bolometer-type THz-wave detector can be manufactured with a high yield.
    • 在微电桥结构中的热辐射计式太赫兹波检测器1中,其中包括测辐射热计薄膜7的温度检测部分14(隔膜)以悬挂于电路基板的状态由支撑部分13支撑, 由电介质材料构成的用于高效收集太赫兹波的电介质盖11被添加到温度检测部分14的上部,并且当电介质盖11的折射率为n时,厚度为t,波长为 太赫兹波是λ,设定为>λ,电介质盖11和温度检测部分14之间的间隙被设定为λ/ 2的整数倍。 通过这种布置,可以使用测辐射热计型红外检测器的结构和制造方法来提高太赫兹波的吸收率,并且可以以高产率制造高性能测辐射热计型THz波检测器。
    • 3. 发明申请
    • BOLOMETER-TYPE THZ-WAVE DETECTOR
    • BOLOMETER型THZ波检测器
    • US20080237467A1
    • 2008-10-02
    • US12056569
    • 2008-03-27
    • Naoki OdaSusumu KomiyamaIwao Hosako
    • Naoki OdaSusumu KomiyamaIwao Hosako
    • G01J5/00
    • G01J5/02G01J5/0215G01J5/0235G01J5/024G01J5/046G01J5/08G01J5/0809G01J5/0815G01J5/0837G01J5/20
    • In a micro-bridge structure in which a temperature detecting portion (diaphragm) including a bolometer thin film is supported by a supporting portion in a state floated from a circuit substrate, a reflective film reflecting a THz wave is formed on the circuit substrate, an absorbing film absorbing the THz wave is formed on the temperature detecting portion, and an optical resonance structure is formed by the reflective film and temperature detecting portion. A gap between the reflective film and temperature detecting portion measures approximately ¼ infrared wavelength (e.g., 1.5 to 2.5 μm). Sheet resistance of the temperature detecting portion is set in a range in which an absorptance of the THz wave becomes a predetermined value or above on the basis of the THz wave (approximately 10-100 Ω/sq.). The absorptance of the THz wave is drastically improved while using the structure and manufacturing technique of a bolometer-type infrared detector.
    • 在从电路基板浮起的状态下,由支撑部支承包含测辐射热计薄膜的温度检测部(隔膜)的微桥结构中,在电路基板上形成反射太赫兹波的反射膜, 在温度检测部分上形成吸收太赫兹波的吸收膜,并且通过反射膜和温度检测部分形成光学共振结构。 反射膜和温度检测部之间的间隙测量近似1/4红外波长(例如,1.5至2.5μm)。 温度检测部的薄片电阻设定在基于太赫兹波(约10-100Ω/ sq。)的太赫兹波的吸收率成为规定值以上的范围内。 使用测辐射热计型红外探测器的结构和制造技术,太赫兹波的吸收率大大提高。
    • 4. 发明授权
    • Bolometer-type THz-wave detector
    • 测辐射计型太赫兹波检测器
    • US07741604B2
    • 2010-06-22
    • US12056569
    • 2008-03-27
    • Naoki OdaSusumu KomiyamaIwao Hosako
    • Naoki OdaSusumu KomiyamaIwao Hosako
    • G01J5/00
    • G01J5/02G01J5/0215G01J5/0235G01J5/024G01J5/046G01J5/08G01J5/0809G01J5/0815G01J5/0837G01J5/20
    • In a micro-bridge structure in which a temperature detecting portion 14 (diaphragm) including a bolometer thin film 7 is supported by a supporting portion 13 in a state floated from a circuit substrate 2, a reflective film 3 reflecting a THz wave is formed on the circuit substrate 2, an absorbing film 11 absorbing the THz wave is formed on the temperature detecting portion 14, and an optical resonance structure is formed by the reflective film 3 and the temperature detecting portion 14. And a gap between the reflective film 3 and the temperature detecting portion 14 is set approximately ¼ of a wavelength of an infrared ray on the basis of the wavelength of the infrared ray (in a range of approximately 1.5 to 2.5 μm, for example), and a sheet resistance of the temperature detecting portion 14 is set in a range in which an absorptance of the THz wave becomes a predetermined value or above on the basis of the THz wave (in a range of approximately 10 to 100 Ω/sq.). By this arrangement, the absorptance of the THz wave is drastically improved while using the structure and manufacturing technique of a bolometer-type infrared detector.
    • 在从电路基板2浮起的状态下,由支撑部13支撑包括测辐射热计薄膜7的温度检测部14(隔膜)的微桥结构中,形成反射太赫兹波的反射膜3, 电路基板2,吸收THz波的吸收膜11形成在温度检测部分14上,并且由反射膜3和温度检测部分14形成光学共振结构。反射膜3和 基于红外线的波长(例如约1.5〜2.5μm的范围),将温度检测部14设定为红外线的波长的近似1/4,并且温度检测部14的薄层电阻 14设定在THz波的吸收率基于THz波(约10〜100Ω·平方)的范围内成为规定值以上的范围。 通过这种布置,在使用测辐射热计型红外探测器的结构和制造技术的同时,太赫兹波的吸收率得到显着提高。
    • 10. 发明授权
    • Infrared focusing device
    • 红外聚焦装置
    • US07391564B2
    • 2008-06-24
    • US10519078
    • 2003-04-22
    • Susumu KomiyamaKenji Ikushima
    • Susumu KomiyamaKenji Ikushima
    • G02B13/14
    • G01Q60/22
    • An infrared light condensing apparatus that focuses an infrared light of several tens microns in wavelength at a microfine area of submicron or less and also a near-field from a microfine area of submicron or less, and permits a scanning image to be obtained. It includes a solid immersion lens including a medium of high index of refraction for coupling an incident light or an outgoing light to an antenna, a measured specimen disposed on a base plane of the solid immersion lens, an antenna disposed away from the base plane at a distance ¼ of an effective wavelength of the light for causing the light to geometrically resonate therewith, a rod-like conductive probe having a sharply point end projecting from the antenna, and a position control means such as a triaxial XYZ mechanical stage for controlling the position of the probe with the intermediary of a cantilever.
    • 一种红外聚光装置,其聚焦在亚微米以下的微细亚微米以下的微细区域的波长为几十微米的红外光,也可以从亚微米以下的微细亚区域接近近场,可以获得扫描图像。 它包括固体浸没透镜,其包括用于将入射光或出射光耦合到天线的高折射率介质,设置在固体浸没透镜的基面上的测量样本,远离基面的天线 用于使光与其几何谐振的光的有效波长的距离¼,具有从天线突出的尖锐点的棒状导电探针,以及诸如三轴XYZ机械台的位置控制装置,用于控制 探头与悬臂中间位置。