专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07875946B2 Semiconductor photodetector that causes avalanche multiplication to occur only at photodetector portion located at central portion of mesa structure 有权
标题翻译：导致雪崩乘法仅在位于台面结构的中心部分的光电检测器部分的半导体光电检测器
公开(公告)号：US07875946B2
公开(公告)日：2011-01-25
申请号：US11259196
申请日：2005-10-27
申请人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
发明人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
IPC分类号： H01L31/107
CPC分类号： H01L31/1864 , H01L31/0232 , H01L31/02327 , H01L31/035281 , H01L31/107 , H01L31/1075
摘要： In order to improve reliability by preventing edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector includes a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.
摘要翻译：为了通过防止具有诸如台面APD的台面结构的半导体光电检测器中的边缘破坏来提高可靠性，半导体光电检测器包括形成在形成在半导体基板上的第一导电类型的第一半导体层上的台面结构，台面结构包括用于吸收光的光吸收层，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩倍增在台面结构的侧面附近的部分的层的厚度比台面结构的中央部的厚度薄。

2. 发明申请

US20060273421A1 Semiconductor photodetector and method for manufacturing the same 有权
标题翻译：半导体光电探测器及其制造方法
公开(公告)号：US20060273421A1
公开(公告)日：2006-12-07
申请号：US11259196
申请日：2005-10-27
申请人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
发明人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
IPC分类号： H01L31/107
CPC分类号： H01L31/1864 , H01L31/0232 , H01L31/02327 , H01L31/035281 , H01L31/107 , H01L31/1075
摘要： In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.
摘要翻译：为了通过防止具有诸如台面APD的台面结构的半导体光电探测器中的边缘击穿来提高可靠性，半导体光电检测器包括形成在形成在半导体衬底上的第一导电类型的第一半导体层上的台面结构，台面包括用于吸收光的光吸收层的结构，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩的厚度在台面结构的侧面附近的部分的倍增层比台面结构的中央部分的厚度薄。

3. 发明申请

US20110068428A1 Semiconductor photodetector and method for manufacturing the same 有权
标题翻译：半导体光电探测器及其制造方法
公开(公告)号：US20110068428A1
公开(公告)日：2011-03-24
申请号：US12926484
申请日：2010-11-22
申请人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
发明人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
IPC分类号： H01L31/107 , H01L31/18
CPC分类号： H01L31/1864 , H01L31/0232 , H01L31/02327 , H01L31/035281 , H01L31/107 , H01L31/1075
摘要： In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.
摘要翻译：为了通过防止具有诸如台面APD的台面结构的半导体光电探测器中的边缘击穿来提高可靠性，半导体光电检测器包括形成在形成在半导体衬底上的第一导电类型的第一半导体层上的台面结构，台面包括用于吸收光的光吸收层的结构，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩的厚度在台面结构的侧面附近的部分的倍增层比台面结构的中央部分的厚度薄。

4. 发明授权

US08772896B2 Semiconductor photodetector that causes avalanche multiplication to occur only at photodetector portion located at central portion of mesa structure 有权
标题翻译：导致雪崩乘法仅在位于台面结构的中心部分的光电检测器部分的半导体光电检测器
公开(公告)号：US08772896B2
公开(公告)日：2014-07-08
申请号：US12926484
申请日：2010-11-22
申请人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
发明人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
IPC分类号： H01L31/107
CPC分类号： H01L31/1864 , H01L31/0232 , H01L31/02327 , H01L31/035281 , H01L31/107 , H01L31/1075
摘要： In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector includes a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.
摘要翻译：为了通过防止具有诸如台面APD的台面结构的半导体光电检测器中的边缘破坏来提高可靠性，半导体光电检测器包括形成在形成在半导体基板上的第一导电类型的第一半导体层上的台面结构，台面包括用于吸收光的光吸收层的结构，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩的厚度在台面结构的侧面附近的部分的倍增层比台面结构的中央部分的厚度薄。

5. 发明授权

US06943422B2 Semiconductor photodetecting device and method for fabricating the same 有权
标题翻译：半导体光电检测装置及其制造方法
公开(公告)号：US06943422B2
公开(公告)日：2005-09-13
申请号：US10624553
申请日：2003-07-23
申请人： Nami Yasuoka , Haruhiko Kuwatsuka , Akito Kuramata
发明人： Nami Yasuoka , Haruhiko Kuwatsuka , Akito Kuramata
IPC分类号： G02B6/122 , G02B6/13 , G02B6/132 , G02B6/42 , H01L21/00 , H01L31/0232 , H01L31/075 , H01L31/10
CPC分类号： G02B6/132 , G02B6/1228 , G02B6/4204 , H01L31/02327
摘要： A semiconductor photodetecting device including a PIN photodiode formed on an SI-InP substrate; a buried optical waveguide portion formed on the SI-InP substrate and including the film thickness continuously increased toward the PIN photodiode and an InP clad layer covering the upper surface and the side surface of the InGaAsP core layer; and a ridge-shaped connection optical waveguide portion formed on the SI-InP substrate between the PIN photodiode and the buried optical waveguide portion and including the InGaAsP core layer and the InP clad layer selectively covering only the upper surface of the InGaAsP core layer.
摘要翻译：一种半导体光电检测器件，包括形成在SI-InP衬底上的PIN光电二极管; 形成在SI-InP衬底上的掩埋光波导部分，其包括朝向PIN光电二极管连续增加的膜厚度和覆盖InGaAsP芯层的上表面和侧表面的InP覆盖层; 以及形成在PIN光电二极管和掩埋光波导部分之间的SI-InP衬底上并包括InGaAsP芯层和InP覆盖层的脊形连接光波导部分，其仅选择性地仅覆盖InGaAsP芯层的上表面。

6. 发明授权

US4984032A Semiconductor photodiode 失效
标题翻译：半导体光电二极管
公开(公告)号：US4984032A
公开(公告)日：1991-01-08
申请号：US297391
申请日：1989-01-17
申请人： Shuichi Miura , Takashi Mikawa , Haruhiko Kuwatsuka , Nami Yasuoka
发明人： Shuichi Miura , Takashi Mikawa , Haruhiko Kuwatsuka , Nami Yasuoka
IPC分类号： H01L31/0304 , H01L31/107
CPC分类号： H01L31/03042 , H01L31/03046 , H01L31/1075 , Y02E10/544
摘要： An APD includes a substrate formed of n.sup.+ -type Al.sub.x Ga.sub.1-x Sb or Al.sub.x Ga.sub.1-x Sb.sub.y As.sub.1-y semiconductor, whose aluminum content ratio x is typically within a range from 0.1 to 0.3. A light absorbing layer is formed of an-type GaSb semiconductor on the substrate. An avalanche multiplication layer is formed of n-type Al.sub.x Ga.sub.1-x Sb or Al.sub.x Ga.sub.1-x Sb.sub.y As.sub.1-y semiconduct, whose aluminum content ratio x is from 0.02 to 0.1, typically 0.065, so that an ionization rate ratio of positive and negative carriers is essentially maximized by a resonant impact ionization phenomenon. A p.sup.+ -region is formed as a surface layer of n-type Al.sub.x Ga.sub.1-x Sb or Al.sub.x Ga.sub.1-x Sb.sub.y As.sub.1-y semiconductor on the avalanche multiplication layer or directly in the avalanche multiplication layer so as to form a pn junction. Electrodes are formed on the p-type region and the substrate so as to apply a bias voltage to the APD. A light to be detected is injected through the substrate via an opening in the substrate electrode, while producing no carriers therein, into the light absorbing layer. The avalanche multiplication layer generates resonant impact ionization with only the positive carriers from the light absorbing layer, so that low noise and fast operation of the APD is achieved. Furthermore, the APD structure of the invention allows for easy design of an APD.

7. 发明授权

US07507600B2 Semiconductor photodetecting device and method for fabricating the same 有权
标题翻译：半导体光电检测装置及其制造方法
公开(公告)号：US07507600B2
公开(公告)日：2009-03-24
申请号：US11180689
申请日：2005-07-14
申请人： Nami Yasuoka , Haruhiko Kuwatsuka , Akito Kuramata
发明人： Nami Yasuoka , Haruhiko Kuwatsuka , Akito Kuramata
IPC分类号： H01L21/00
CPC分类号： G02B6/132 , G02B6/1228 , G02B6/4204 , H01L31/02327
摘要： A semiconductor photodetecting device including a PIN photodiode formed on an SI-InP substrate; a buried optical waveguide portion formed on the SI-InP substrate and including the film thickness continuously increased toward the PIN photodiode and an InP clad layer covering the upper surface and the side surface of the InGaAsP core layer; and a ridge-shaped connection optical waveguide portion formed on the SI-InP substrate between the PIN photodiode and the buried optical waveguide portion and including the InGaAsP core layer and the InP clad layer selectively covering only the upper surface of the InGaAsP core layer.
摘要翻译：一种半导体光电检测器件，包括形成在SI-InP衬底上的PIN光电二极管; 形成在SI-InP衬底上的掩埋光波导部分，其包括朝向PIN光电二极管连续增加的膜厚度和覆盖InGaAsP芯层的上表面和侧表面的InP覆盖层; 以及形成在PIN光电二极管和掩埋光波导部分之间的SI-InP衬底上并包括InGaAsP芯层和InP覆盖层的脊形连接光波导部分，其仅选择性地仅覆盖InGaAsP芯层的上表面。

8. 发明申请

US20050272180A1 Semiconductor photodetecting device and method for fabricating the same 有权
公开(公告)号：US20050272180A1
公开(公告)日：2005-12-08
申请号：US11180689
申请日：2005-07-14
申请人： Nami Yasuoka , Haruhiko Kuwatsuka , Akito Kuramata
发明人： Nami Yasuoka , Haruhiko Kuwatsuka , Akito Kuramata
IPC分类号： G02B6/122 , G02B6/13 , G02B6/132 , G02B6/42 , H01L21/00 , H01L31/0232 , H01L31/075 , H01L31/10
CPC分类号： G02B6/132 , G02B6/1228 , G02B6/4204 , H01L31/02327
摘要： A semiconductor photodetecting device including a PIN photodiode formed on an SI—InP substrate; a buried optical waveguide portion formed on the SI—InP substrate and including the film thickness continuously increased toward the PIN photodiode and an InP clad layer covering the upper surface and the side surface of the InGaAsP core layer; and a ridge-shaped connection optical waveguide portion formed on the SI—InP substrate between the PIN photodiode and the buried optical waveguide portion and including the InGaAsP core layer and the InP clad layer selectively covering only the upper surface of the InGaAsP core layer.

9. 发明申请

US20100090196A1 Optical semiconductor device and manufacturing method of the same 有权
标题翻译：光半导体器件及其制造方法
公开(公告)号：US20100090196A1
公开(公告)日：2010-04-15
申请号：US12654016
申请日：2009-12-08
申请人： Nami Yasuoka , Kenichi Kawaguchi
发明人： Nami Yasuoka , Kenichi Kawaguchi
IPC分类号： H01L29/66
CPC分类号： H01L31/18 , B82Y20/00 , H01L31/0352 , H01L31/035236
摘要： A side barrier is provided between columnar dots each constituted by directly stacking respective quantum dots in seven or more layers. Out of respective side barrier layers composing the side barrier, each of the lower side barrier layers (four layers of the undermost layer to the fourth layer from the bottom) is formed as a first side barrier layer into which a tensile strain is introduced, and each of the upper side barrier layers (three layers of the fifth Layer to the uppermost layer from the bottom) is formed as a second side barrier layer which has no strain.
摘要翻译：在通过以7层或更多层直接层叠各量子点构成的柱状点之间设置有侧壁。在构成侧壁的各个侧壁阻挡层中，形成作为施加拉伸应变的第一侧阻挡层，下侧阻挡层（从底部的最下层到第四层的四层）每个上侧阻挡层（从第五层到底层的最上层三层）被形成为没有应变的第二侧阻挡层。

10. 发明申请

US20070194299A1 Optical semiconductor device and manufacturing method of the same 有权
标题翻译：光半导体器件及其制造方法
公开(公告)号：US20070194299A1
公开(公告)日：2007-08-23
申请号：US11444420
申请日：2006-06-01
申请人： Nami Yasuoka , Kenichi Kawaguchi
发明人： Nami Yasuoka , Kenichi Kawaguchi
IPC分类号： H01L31/00
CPC分类号： H01L31/18 , B82Y20/00 , H01L31/0352 , H01L31/035236
摘要： A side barrier is provided between columnar dots each constituted by directly stacking respective quantum dots in seven or more layers. Out of respective side barrier layers composing the side barrier, each of the lower side barrier layers (four layers of the undermost layer to the fourth layer from the bottom) is formed as a first side barrier layer into which a tensile strain is introduced, and each of the upper side barrier layers (three layers of the fifth layer to the uppermost layer from the bottom) is formed as a second side barrier layer which has no strain.
摘要翻译：在通过以7层或更多层直接层叠各量子点构成的柱状点之间设置有侧壁。在构成侧壁的各个侧壁阻挡层中，形成作为施加拉伸应变的第一侧阻挡层，下侧阻挡层（从底部的最下层到第四层的四层）每个上侧阻挡层（从第五层到底层的最上层的三层）形成为不具有应变的第二侧面阻挡层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式