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1. 发明申请

US20090098486A1 COMPOSITION FOR FORMING LOWER LAYER FILM AND PATTERN FORMING METHOD 有权
标题翻译：用于形成下层薄膜和图案形成方法的组合物
公开(公告)号：US20090098486A1
公开(公告)日：2009-04-16
申请号：US12282599
申请日：2007-03-14
申请人： Nakaatsu Yoshimura , Yousuke Konno , Hikaru Sugita , Junichi Takahashi
发明人： Nakaatsu Yoshimura , Yousuke Konno , Hikaru Sugita , Junichi Takahashi
IPC分类号： G03F7/004 , C08G61/12 , G03F7/20
CPC分类号： G03F7/091 , G03F7/094 , G03F7/11 , Y10S430/106
摘要： A composition for forming a lower layer film comprises a polymer (A) having a naphthalene derivative structural unit shown by the following formula (1), wherein R1 represents a hydroxyl group and the like, X represents a substitutable alkylene group having 1 to 20 carbon atoms and the like, n represents 0 to 6, m represents 1 to 8, and n+m represents an integer from 1 to 8, provided that two or more R1s may be the same or different and two or more Xs may be the same or different.
摘要翻译：用于形成下层膜的组合物包括具有如下式（1）所示的萘衍生物结构单元的聚合物（A），其中R1表示羟基等，X表示具有1〜20碳的可取代亚烷基原子等，n表示0〜6，m表示1〜8，n + m表示1〜8的整数，条件是两个以上的R 1可以相同或不同，两个以上的X可以相同或不同。

2. 发明授权

US07749681B2 Composition for forming lower layer film and pattern forming method 有权
标题翻译：用于形成下层膜的组合物和图案形成方法
公开(公告)号：US07749681B2
公开(公告)日：2010-07-06
申请号：US12282599
申请日：2007-03-14
申请人： Nakaatsu Yoshimura , Yousuke Konno , Hikaru Sugita , Junichi Takahashi
发明人： Nakaatsu Yoshimura , Yousuke Konno , Hikaru Sugita , Junichi Takahashi
IPC分类号： G03F7/00 , G03F7/004 , G03F7/11
CPC分类号： G03F7/091 , G03F7/094 , G03F7/11 , Y10S430/106
摘要： A composition for forming a lower layer film comprises a polymer (A) having a naphthalene derivative structural unit shown by the following formula (1), wherein R1 represents a hydroxyl group and the like, X represents a substitutable alkylene group having 1 to 20 carbon atoms and the like, n represents 0 to 6, m represents 1 to 8, and n+m represents an integer from 1 to 8, provided that two or more R1s may be the same or different and two or more Xs may be the same or different.
摘要翻译：用于形成下层膜的组合物包括具有如下式（1）所示的萘衍生物结构单元的聚合物（A），其中R1表示羟基等，X表示具有1〜20碳的可取代亚烷基原子等，n表示0〜6，m表示1〜8，n + m表示1〜8的整数，条件是两个以上的R 1可以相同或不同，两个以上的X可以相同或不同。

3. 发明申请

US20130004900A1 METHOD FOR FORMING RESIST UNDER LAYER FILM, PATTERN FORMING METHOD AND COMPOSITION FOR RESIST UNDER LAYER FILM 有权
标题翻译：层状薄膜成膜方法，图案形成方法及层状薄膜电阻组合
公开(公告)号：US20130004900A1
公开(公告)日：2013-01-03
申请号：US13609373
申请日：2012-09-11
申请人： Yousuke Konno , Nakaatsu Yoshimura , Fumihiro Toyokawa , Hikaru Sugita
发明人： Yousuke Konno , Nakaatsu Yoshimura , Fumihiro Toyokawa , Hikaru Sugita
IPC分类号： B05D7/24 , C09D5/00 , B05D3/10 , G03F7/20
CPC分类号： G03F7/091 , G03F7/168
摘要： A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film.
摘要翻译：形成抗蚀剂下层膜的方法包括提供在待加工的基材上形成抗蚀剂下层膜的组合物。该组合物包括溶剂和杯芳烃化合物或杯芳烃化合物的衍生物。将该组合物设定为氧含量为1体积％以上的氧化气氛，形成抗蚀剂层下膜。

4. 发明授权

US08691496B2 Method for forming resist under layer film, pattern forming method and composition for resist under layer film 有权
标题翻译：用于形成抗蚀剂层下膜的方法，图案形成方法和抗蚀剂下层膜的组合物
公开(公告)号：US08691496B2
公开(公告)日：2014-04-08
申请号：US13609373
申请日：2012-09-11
申请人： Yousuke Konno , Nakaatsu Yoshimura , Fumihiro Toyokawa , Hikaru Sugita
发明人： Yousuke Konno , Nakaatsu Yoshimura , Fumihiro Toyokawa , Hikaru Sugita
IPC分类号： G03F7/004
CPC分类号： G03F7/091 , G03F7/168
摘要： A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film.
摘要翻译：形成抗蚀剂下层膜的方法包括提供在待加工的基材上形成抗蚀剂下层膜的组合物。该组合物包括溶剂和杯芳烃化合物或杯芳烃化合物的衍生物。将该组合物设定为氧含量为1体积％以上的氧化气氛，形成抗蚀剂层下膜。

5. 发明授权

US08288073B2 Pattern forming method 有权
标题翻译：图案形成方法
公开(公告)号：US08288073B2
公开(公告)日：2012-10-16
申请号：US12442702
申请日：2007-09-18
申请人： Yousuke Konno , Nakaatsu Yoshimura , Fumihiro Toyokawa , Hikaru Sugita
发明人： Yousuke Konno , Nakaatsu Yoshimura , Fumihiro Toyokawa , Hikaru Sugita
IPC分类号： G03F7/00 , G03F7/26 , G03F7/40
CPC分类号： G03F7/091 , G03F7/168
摘要： This invention provides a method for resist under layer film formation, which can form a resist under layer film which can function as an anti-reflection film, is excellent in pattern transfer properties and etching resistance, and does not cause bending of a pattern even in the transfer of a fined pattern, and a composition for the resist under layer film for use in the method, and a method for pattern formation. The method for resist under layer film formation comprises the steps of coating a composition for resist under layer film formation (for example, a composition comprising a compound having a phenolic hydroxyl group, a solvent, and an accelerator) onto a substrate to be processed, and treating the formed coating film under an oxidizing atmosphere having an oxygen concentration of not less than 1% by volume and a temperature of 300° C. or higher to form a resist under layer film.
摘要翻译：本发明提供一种抗蚀层下层成膜方法，其可形成可用作抗反射膜的抗蚀剂下层膜，图案转印性能和耐蚀刻性优异，并且不会引起图案的弯曲精细图案的转印和用于该方法的抗蚀剂层下膜的组合物和图案形成方法。抗蚀层下层成膜的方法包括以下步骤：将待层压成膜用组合物（例如，含有酚羟基的化合物，溶剂和促进剂的组合物）涂布在待加工基材上，并在氧浓度不低于1体积％，温度为300℃以上的氧化气氛下处理所形成的涂膜，以形成抗蚀层下层膜。

6. 发明申请

US20100028802A1 METHOD FOR RESIST UNDER LAYER FILM FORMATION, COMPOSITION FOR RESIST UNDER LAYER FILM FOR USE IN THE METHOD, AND METHOD FOR PATTERN FORMATION 有权
标题翻译：层状膜形成时的阻力方法，方法中使用的层膜电阻的组合物，以及用于图案形成的方法
公开(公告)号：US20100028802A1
公开(公告)日：2010-02-04
申请号：US12442702
申请日：2007-09-18
申请人： Yousuke Konno , Nakaatsu Yoshimura , Fumihiro Toyokawa , Hikaru Sugita
发明人： Yousuke Konno , Nakaatsu Yoshimura , Fumihiro Toyokawa , Hikaru Sugita
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/091 , G03F7/168
摘要： This invention provides a method for resist under layer film formation, which can form a resist under layer film which can function as an anti-reflection film, is excellent in pattern transfer properties and etching resistance, and does not cause bending of a pattern even in the transfer of a fined pattern, and a composition for the resist under layer film for use in the method, and a method for pattern formation. The method for resist under layer film formation comprises the steps of coating a composition for resist under layer film formation (for example, a composition comprising a compound having a phenolic hydroxyl group, a solvent, and an accelerator) onto a substrate to be processed, and treating the formed coating film under an oxidizing atmosphere having an oxygen concentration of not less than 1% by volume and a temperature of 300° C. or higher to form a resist under layer film.
摘要翻译：本发明提供一种抗蚀层下层成膜方法，其可形成可用作抗反射膜的抗蚀剂下层膜，图案转印性能和耐蚀刻性优异，并且不会引起图案的弯曲精细图案的转印和用于该方法的抗蚀剂层下膜的组合物和图案形成方法。抗蚀层下层成膜的方法包括以下步骤：将待层压成膜用组合物（例如，含有酚羟基的化合物，溶剂和促进剂的组合物）涂布在待加工基材上，并在氧浓度不低于1体积％，温度为300℃以上的氧化气氛下处理所形成的涂膜，以形成抗蚀层下层膜。

7. 发明申请

US20110251323A1 COMPOSITION FOR FORMING RESIST LOWER LAYER FILM 有权
标题翻译：用于形成较低层膜的组合物
公开(公告)号：US20110251323A1
公开(公告)日：2011-10-13
申请号：US12599694
申请日：2008-05-21
申请人： Nakaatsu Yoshimura , Yousuke Konno
发明人： Nakaatsu Yoshimura , Yousuke Konno
IPC分类号： C08K5/101
CPC分类号： G03F7/094 , H01L21/31144 , H01L21/76808
摘要： A composition for forming a resist lower layer film, which contains (A) a resin, (B) a butyl ether group-containing crosslinking agent and (C) a solvent.
摘要翻译：含有（A）树脂，（B）含有丁基醚基团的交联剂和（C）溶剂的形成抗蚀剂下层膜的组合物。

8. 发明授权

US08663905B2 Pattern-forming method 有权
标题翻译：图案形成方法
公开(公告)号：US08663905B2
公开(公告)日：2014-03-04
申请号：US12515061
申请日：2007-11-19
申请人： Nakaatsu Yoshimura , Yousuke Konno
发明人： Nakaatsu Yoshimura , Yousuke Konno
IPC分类号： G03F7/20 , G03F7/30 , G03F7/36
CPC分类号： G03F7/095 , G03F7/11
摘要： A resist under layer film-forming composition comprises (A) an aminated fullerene having at least one amino group bonded to a fullerene skeleton, and (B) a solvent. The composition exhibits excellent etching resistance, causes an under layer film pattern to bend only with difficulty in a dry etching process, and can transfer a resist pattern faithfully onto a substrate to be processed with high reproducibility.
摘要翻译：抗蚀层下层成膜组合物包含（A）具有至少一个与富勒烯骨架结合的氨基的胺化富勒烯和（B）溶剂。该组合物表现出优异的耐蚀刻性，使得底层膜图案难以弯曲，并且可以将抗蚀剂图案忠实地转印到待加工的基板上，具有高再现性。

9. 发明授权

US08334338B2 Composition for forming resist lower layer film 有权
标题翻译：用于形成抗蚀剂下层膜的组合物
公开(公告)号：US08334338B2
公开(公告)日：2012-12-18
申请号：US12599694
申请日：2008-05-21
申请人： Nakaatsu Yoshimura , Yousuke Konno
发明人： Nakaatsu Yoshimura , Yousuke Konno
IPC分类号： A61K9/16 , C08K5/10
CPC分类号： G03F7/094 , H01L21/31144 , H01L21/76808
摘要： A composition for forming a resist lower layer film, which contains (A) a resin, (B) a butyl ether group-containing crosslinking agent and (C) a solvent.
摘要翻译：含有（A）树脂，（B）含有丁基醚基团的交联剂和（C）溶剂的形成抗蚀剂下层膜的组合物。

10. 发明申请

US20100081082A1 COMPOSITION FOR RESIST UNDER LAYER FILM FORMATION AND METHOD FOR PATTERN FORMATION 有权
标题翻译：层状膜形成时的抗性组合物和形成图案的方法
公开(公告)号：US20100081082A1
公开(公告)日：2010-04-01
申请号：US12515061
申请日：2007-11-19
申请人： Nakaatsu Yoshimura , Yousuke Konno
发明人： Nakaatsu Yoshimura , Yousuke Konno
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/095 , G03F7/11
摘要： A resist under layer film-forming composition comprises (A) an aminated fullerene having at least one amino group bonded to a fullerene skeleton, and (B) a solvent. The composition exhibits excellent etching resistance, causes an under layer film pattern to bend only with difficulty in a dry etching process, and can transfer a resist pattern faithfully onto a substrate to be processed with high reproducibility.
摘要翻译：抗蚀层下层成膜组合物包含（A）具有至少一个与富勒烯骨架结合的氨基的胺化富勒烯和（B）溶剂。该组合物表现出优异的耐蚀刻性，使得底层膜图案难以弯曲，并且可以将抗蚀剂图案忠实地转印到待加工的基板上，具有高再现性。

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