专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130082699A1 Magnatoresistive Sensing Component and Agnatoresistive Sensing Device 有权
标题翻译：磁阻电感元件和电阻传感器
公开(公告)号：US20130082699A1
公开(公告)日：2013-04-04
申请号：US13625009
申请日：2012-09-24
申请人： Nai-Chung Fu , Kuang-Ching Chen , Fu-Tai Liou
发明人： Nai-Chung Fu , Kuang-Ching Chen , Fu-Tai Liou
IPC分类号： G01R33/09
CPC分类号： G01R33/096 , G01R33/0011 , G01R33/0206 , G01R33/09
摘要： A magnetoresistive sensing component includes a strip of horizontal magnetoresistive layer, a conductive part and a first magnetic-field-sensing layer. The strip of horizontal magnetoresistive layer is disposed above a surface of a substrate and has a first side and a second side opposite the first side along its extending direction. The conductive part is disposed above or below the horizontal magnetoresistive layer and electrically coupled to the horizontal magnetoresistive layer. The conductive part and the horizontal magnetoresistive layer together form at least an electrical current path. The first magnetic-field-sensing layer is not parallel to the surface of the substrate and magnetically coupled to the horizontal magnetoresistive layer at the first side of the horizontal magnetoresistive layer.
摘要翻译：磁阻感测部件包括水平磁阻层条，导电部分和第一磁场感测层。水平磁阻层的条带设置在基板的表面上方，并且沿其延伸方向具有与第一侧相对的第一侧和第二侧。导电部分设置在水平磁阻层的上方或下方，并电耦合到水平磁阻层。导电部分和水平磁阻层一起形成至少一个电流路径。第一磁场感测层不平行于衬底的表面并且磁耦合到水平磁阻层的第一侧处的水平磁阻层。

2. 发明授权

US08749232B2 Magnatoresistive sensing component and agnatoresistive sensing device 有权
标题翻译：磁阻电感传感元件和电阻传感器
公开(公告)号：US08749232B2
公开(公告)日：2014-06-10
申请号：US13625009
申请日：2012-09-24
申请人： Nai-Chung Fu , Kuang-Ching Chen , Fu-Tai Liou
发明人： Nai-Chung Fu , Kuang-Ching Chen , Fu-Tai Liou
IPC分类号： G01R33/02
CPC分类号： G01R33/096 , G01R33/0011 , G01R33/0206 , G01R33/09
摘要： A magnetoresistive sensing component includes a strip of horizontal magnetoresistive layer, a conductive part and a first magnetic-field-sensing layer. The strip of horizontal magnetoresistive layer is disposed above a surface of a substrate and has a first side and a second side opposite the first side along its extending direction. The conductive part is disposed above or below the horizontal magnetoresistive layer and electrically coupled to the horizontal magnetoresistive layer. The conductive part and the horizontal magnetoresistive layer together form at least an electrical current path. The first magnetic-field-sensing layer is not parallel to the surface of the substrate and magnetically coupled to the horizontal magnetoresistive layer at the first side of the horizontal magnetoresistive layer.
摘要翻译：磁阻感测部件包括水平磁阻层条，导电部分和第一磁场感测层。水平磁阻层的条带设置在基板的表面上方，并且沿其延伸方向具有与第一侧相对的第一侧和第二侧。导电部分设置在水平磁阻层的上方或下方，并电耦合到水平磁阻层。导电部分和水平磁阻层一起形成至少一个电流路径。第一磁场感测层不平行于衬底的表面并且磁耦合到水平磁阻层的第一侧处的水平磁阻层。

3. 发明授权

US08629519B2 Tunneling magnetoresistance sensor 失效
标题翻译：隧道磁阻传感器
公开(公告)号：US08629519B2
公开(公告)日：2014-01-14
申请号：US13333951
申请日：2011-12-21
申请人： Chien-Min Lee , Kuang-Ching Chen , Fu-Tai Liou
发明人： Chien-Min Lee , Kuang-Ching Chen , Fu-Tai Liou
IPC分类号： H01L29/82
CPC分类号： H01L43/02 , G01R33/098 , H01F10/3254 , H01L27/22
摘要： A tunneling magnetoresistance sensor including a substrate, an insulating layer, a tunneling magnetoresistance component and an electrode array is provided. The insulating layer is disposed on the substrate. The tunneling magnetoresistance component is embedded in the insulating layer. The electrode array is formed in a single metal layer and disposed in the insulating layer either below or above the TMR component. The electrode array includes a number of separate electrodes. The electrodes are electrically connected to the tunneling magnetoresistance component to form a current-in-plane tunneling conduction mode. The tunneling magnetoresistance sensor in this configuration can be manufactured with a reduced cost and maintain the high performance at the same time.
摘要翻译：提供了包括基板，绝缘层，隧道磁阻部件和电极阵列的隧道式磁阻传感器。绝缘层设置在基板上。隧道磁阻分量嵌入在绝缘层中。电极阵列形成在单个金属层中，并且设置在TMR部件的下方或上方的绝缘层中。电极阵列包括多个单独的电极。电极电连接到隧道磁阻分量以形成电流 - 平面隧穿传导模式。这种结构中的隧道磁阻传感器可以以降低的成本制造并且同时保持高性能。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式