专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08068328B2 Nanolithographic method of manufacturing an embedded passive device for a microelectronic application, and microelectronic device containing same 有权
标题翻译：制造用于微电子应用的嵌入式无源器件的纳米光刻方法，以及包含其的微电子器件
公开(公告)号：US08068328B2
公开(公告)日：2011-11-29
申请号：US12047277
申请日：2008-03-12
申请人： Nachiket R. Raravikar , Rahul Panat
发明人： Nachiket R. Raravikar , Rahul Panat
IPC分类号： H01G4/228
CPC分类号： H01G4/228 , H01C17/075 , H01G4/306 , H01G4/33 , H01G13/00 , H01L27/016 , H01L28/40 , H05K1/16 , H05K1/162 , H05K1/167
摘要： A method of manufacturing an embedded passive device for a microelectronic application comprises steps of providing a substrate (110, 210, 310), nanolithographically forming a first section (121, 221, 321) of the embedded passive device over the substrate, and nanolithographically forming subsequent sections (122, 222, 322) the embedded passive device adjacent to the first section. The resulting embedded passive device may contain features less than approximately 100 nm in size.
摘要翻译：一种制造用于微电子应用的嵌入式无源器件的方法包括以下步骤：在衬底上以纳刻方式形成嵌入式无源器件的第一部分（121,221,321），以及纳米光刻形成的衬底（110,210,310）随后的部分（122,222,322）与第一部分相邻的嵌入式无源器件。所产生的嵌入式无源器件可能包含尺寸小于约100nm的特征。

2. 发明授权

US08724290B2 Nanolithographic method of manufacturing an embedded passive device for a microelectronic application, and microelectronic device containing same 有权
标题翻译：制造用于微电子应用的嵌入式无源器件的纳米光刻方法，以及包含其的微电子器件
公开(公告)号：US08724290B2
公开(公告)日：2014-05-13
申请号：US13292235
申请日：2011-11-09
申请人： Nachiket R. Raravikar , Rahul Panat
发明人： Nachiket R. Raravikar , Rahul Panat
IPC分类号： H01G4/228
CPC分类号： H01G4/228 , H01C17/075 , H01G4/306 , H01G4/33 , H01G13/00 , H01L27/016 , H01L28/40 , H05K1/16 , H05K1/162 , H05K1/167
摘要： A method of manufacturing an embedded passive device for a microelectronic application comprises steps of providing a substrate (110, 210, 310), nanolithographically forming a first section (121, 221, 321) of the embedded passive device over the substrate, and nanolithographically forming subsequent sections (122, 222, 322) the embedded passive device adjacent to the first section. The resulting embedded passive device may contain features less than approximately 100 nm in size.
摘要翻译：一种制造用于微电子应用的嵌入式无源器件的方法包括以下步骤：在衬底上以纳刻方式形成嵌入式无源器件的第一部分（121,221,321），以及纳米光刻形成的衬底（110,210,310）随后的部分（122,222,322）与第一部分相邻的嵌入式无源器件。所产生的嵌入式无源器件可能包含尺寸小于约100nm的特征。

3. 发明申请

US20090231777A1 NANOLITHOGRAPHIC METHOD OF MANUFACTURING AN EMBEDDED PASSIVE DEVICE FOR A MICROELECTRONIC APPLICATION, AND MICROELECTRONIC DEVICE CONTAINING SAME 有权
标题翻译：用于微电子应用的嵌入式被动器件的制造方法和包含其的微电子器件
公开(公告)号：US20090231777A1
公开(公告)日：2009-09-17
申请号：US12047277
申请日：2008-03-12
申请人： Nachiket R. Raravikar , Rahul Panat
发明人： Nachiket R. Raravikar , Rahul Panat
IPC分类号： H01G4/005 , H01G4/00
CPC分类号： H01G4/228 , H01C17/075 , H01G4/306 , H01G4/33 , H01G13/00 , H01L27/016 , H01L28/40 , H05K1/16 , H05K1/162 , H05K1/167
摘要： A method of manufacturing an embedded passive device for a microelectronic application comprises steps of providing a substrate (110, 210, 310), nanolithographically forming a first section (121, 221, 321) of the embedded passive device over the substrate, and nanolithographically forming subsequent sections (122, 222, 322) the embedded passive device adjacent to the first section. The resulting embedded passive device may contain features less than approximately 100 nm in size.
摘要翻译：一种制造用于微电子应用的嵌入式无源器件的方法包括以下步骤：在衬底上以纳刻方式形成嵌入式无源器件的第一部分（121,221,321），以及纳米光刻形成的衬底（110,210,310）随后的部分（122,222,322）与第一部分相邻的嵌入式无源器件。所产生的嵌入式无源器件可能包含尺寸小于约100nm的特征。

4. 发明授权

US10086432B2 Three dimensional sub-mm wavelength sub-THz frequency antennas on flexible and UV-curable dielectric using printed electronic metal traces 有权
公开(公告)号：US10086432B2
公开(公告)日：2018-10-02
申请号：US14964635
申请日：2015-12-10
申请人： Rahul Panat , Deuk Hyoun Heo
发明人： Rahul Panat , Deuk Hyoun Heo
IPC分类号： H01P11/00 , B22F3/105 , B22F1/00 , G06F1/16 , H01F27/24 , H01F27/28 , H01F41/02 , H01F41/04 , H05K1/02 , H05K1/03 , H05K3/14 , H05K3/22 , H05K3/46 , B22F7/08 , B29C70/88 , B33Y80/00 , H05K1/09 , B33Y10/00 , B33Y50/02 , H01G4/12 , H05K3/12
摘要： Novel methods for micro-additive manufacturing three dimensional sub-millimeter components are disclosed herein. The methods can include dispensing a dielectric at positions on a substrate so as to provide dielectric structures having an aspect ratio of up to 1:20. The methods can also include in-situ curing of the dielectric structure upon dispensing of the dielectric wherein the dispensing and curing steps provide for three dimensional configurations. Direct printing a metal nanoparticle solution on the dielectric to create conductive traces and thereafter sintering the printed nanoparticle solution so as to cure the conductive traces enables three dimensional conductive (antenna) elements having a length and width scale of down to 1 μm.

5. 发明授权

US09627320B2 Nanowires coated on traces in electronic devices 有权
公开(公告)号：US09627320B2
公开(公告)日：2017-04-18
申请号：US13976008
申请日：2011-12-23
申请人： Rahul Panat , Bhanu Jaiswal
发明人： Rahul Panat , Bhanu Jaiswal
IPC分类号： H01L23/485 , H01L23/532 , B82Y30/00 , H01L21/02 , H01L29/06 , H01L23/498 , H01L21/768
CPC分类号： H01L23/53238 , B82Y30/00 , H01L21/02491 , H01L21/02494 , H01L21/02554 , H01L21/02603 , H01L21/02628 , H01L21/76834 , H01L21/7685 , H01L23/49866 , H01L29/0673 , H01L2924/0002 , H01L2924/00
摘要： Methods and devices including the formation of a layer of nanowires on wiring line traces are described. One device comprises a first dielectric layer and a plurality of traces on the first dielectric layer, the traces comprising Cu. The traces include a layer of ZnO nanowires positioned thereon. A second dielectric layer is positioned on the first dielectric layer and on the traces, wherein the second dielectric layer is in direct contact with the ZnO nanowires. Other embodiments are described and claimed.

6. 发明申请

US20120050940A1 NANOLITHOGRAPHIC METHOD OF MANUFACTURING AN EMBEDDED PASSIVE DEVICE FOR A MICROELECTRONIC APPLICATION, AND MICROELECTRONIC DEVICE CONTAINING SAME 有权
标题翻译：用于微电子应用的嵌入式被动器件的制造方法和包含其的微电子器件
公开(公告)号：US20120050940A1
公开(公告)日：2012-03-01
申请号：US13292235
申请日：2011-11-09
申请人： Nachiket Raravikar , Rahul Panat
发明人： Nachiket Raravikar , Rahul Panat
IPC分类号： H01G4/06
CPC分类号： H01G4/228 , H01C17/075 , H01G4/306 , H01G4/33 , H01G13/00 , H01L27/016 , H01L28/40 , H05K1/16 , H05K1/162 , H05K1/167
摘要： A method of manufacturing an embedded passive device for a microelectronic application comprises steps of providing a substrate (110, 210, 310), nanolithographically forming a first section (121, 221, 321) of the embedded passive device over the substrate, and nanolithographically forming subsequent sections (122, 222, 322) the embedded passive device adjacent to the first section. The resulting embedded passive device may contain features less than approximately 100 nm in size.
摘要翻译：一种制造用于微电子应用的嵌入式无源器件的方法包括以下步骤：在衬底上以纳刻方式形成嵌入式无源器件的第一部分（121,221,321），以及纳米光刻形成的衬底（110,210,310）随后的部分（122,222,322）与第一部分相邻的嵌入式无源器件。所产生的嵌入式无源器件可能包含尺寸小于约100nm的特征。

7. 发明申请

US20160172741A1 THREE DIMENSIONAL SUB-MM WAVELENGTH SUB-THZ FREQUENCY ANTENNAS ON FLEXIBLE AND UV-CURABLE DIELECTRIC USING PRINTED ELECTRONIC METAL TRACES 审中-公开
标题翻译：使用印刷电子金属丝的柔性和紫外线固化介质上的三维亚毫米波长亚兹兹频率天线
公开(公告)号：US20160172741A1
公开(公告)日：2016-06-16
申请号：US14964635
申请日：2015-12-10
申请人： Rahul Panat , Deuk Hyoun Heo
发明人： Rahul Panat , Deuk Hyoun Heo
IPC分类号： H01P11/00
CPC分类号： B22F3/1055 , B22F1/0044 , B22F7/08 , B22F2003/1058 , B22F2999/00 , B29C70/882 , B33Y10/00 , B33Y50/02 , B33Y80/00 , G06F1/163 , H01F27/24 , H01F27/2804 , H01F41/0206 , H01F41/046 , H01G4/1218 , H01P11/001 , H05K1/028 , H05K1/0283 , H05K1/0284 , H05K1/0296 , H05K1/0313 , H05K1/0393 , H05K1/09 , H05K1/097 , H05K3/1241 , H05K3/14 , H05K3/22 , H05K3/4644 , H05K2201/0162 , H05K2201/10098 , H05K2203/0126 , Y10T29/49016 , Y10T29/49124 , Y10T29/49155 , B22F1/0018 , B22F3/008
摘要： Novel methods for micro-additive manufacturing three dimensional sub-millimeter components are disclosed herein. The methods can include dispensing a dielectric at positions on a substrate so as to provide dielectric structures having an aspect ratio of up to 1:20. The methods can also include in-situ curing of the dielectric structure upon dispensing of the dielectric wherein the dispensing and curing steps provide for three dimensional configurations. Direct printing a metal nanoparticle solution on the dielectric to create conductive traces and thereafter sintering the printed nanoparticle solution so as to cure the conductive traces enables three dimensional conductive (antenna) elements having a length and width scale of down to 1 μm.
摘要翻译：本文公开了微添加剂制造三维亚毫米部件的新方法。所述方法可以包括在基板上的位置处分配电介质，以便提供具有高达1:20的纵横比的电介质结构。所述方法还可以包括在分配电介质时电介质结构的原位固化，其中分配和固化步骤提供三维构型。在电介质上直接印刷金属纳米颗粒溶液以产生导电迹线，然后烧结印刷的纳米颗粒溶液以固化导电迹线，使能够具有至少1μm的长度和宽度尺度的三维导电（天线）元件。

8. 发明授权

US09846276B2 Low-cost fiber optic sensor for large strains 有权
公开(公告)号：US09846276B2
公开(公告)日：2017-12-19
申请号：US15098891
申请日：2016-04-14
申请人： Rahul Panat , Lei Li
发明人： Rahul Panat , Lei Li
IPC分类号： G01L1/24 , G02B6/02 , G01B11/16 , G02B5/18
CPC分类号： G02B6/02142 , G01B11/18 , G02B5/1847 , G02B6/02066 , G02B6/02071 , G02B6/02095 , G02B6/021 , G02B6/02123 , G02B6/02152 , G02B6/0229 , G02B6/02395 , G02B2006/02161
摘要： A fiber grating device of low cost and arbitrary length is formed on a portion of a portion or the entirety of a highly elastic fiber optic core having a low Young's modulus of elasticity by causing elongation of the fiber optic core and forming or depositing a hard skin or cladding on the elongated fiber optic core. When the stress is then released, the hard skin or cladding buckles (including elastic or plastic deformation or both) to form wrinkles at the interface of the fiber optic core and the hard skin or cladding which are oriented circumferentially and highly uniform in height and spacing which can be varied at will by choice of materials, stretching, and thickness and composition of the cladding. Since the elastic elongation of the fiber optic core portion may be 200% or greater, an unprecedented measurement range is provided.

9. 发明申请

US20160305771A1 LOW-COST FIBER OPTIC SENSOR FOR LARGE STRAINS 有权
标题翻译：用于大型应变的低成本光纤传感器
公开(公告)号：US20160305771A1
公开(公告)日：2016-10-20
申请号：US15098891
申请日：2016-04-14
申请人： Rahul Panat , Lei Li
发明人： Rahul Panat , Lei Li
IPC分类号： G01B11/16 , G02B6/02
CPC分类号： G02B6/02142 , G01B11/18 , G02B5/1847 , G02B6/02066 , G02B6/02071 , G02B6/02095 , G02B6/021 , G02B6/02123 , G02B6/02152 , G02B6/0229 , G02B6/02395 , G02B2006/02161
摘要： A fiber grating device of low cost and arbitrary length is formed on a portion of a portion or the entirety of a highly elastic fiber optic core having a low Young's modulus of elasticity by causing elongation of the fiber optic core and forming or depositing a hard skin or cladding on the elongated fiber optic core. When the stress is then released, the hard skin or cladding buckles (including elastic or plastic deformation or both) to form wrinkles at the interface of the fiber optic core and the hard skin or cladding which are oriented circumferentially and highly uniform in height and spacing which can be varied at will by choice of materials, stretching, and thickness and composition of the cladding. Since the elastic elongation of the fiber optic core portion may be 200% or greater, an unprecedented measurement range is provided.
摘要翻译：低成本和任意长度的光纤光栅装置通过引起光纤芯的伸长并形成或沉积硬皮来形成具有低杨氏弹性模量的高弹性光纤芯的一部分或全部的一部分或在细长光纤芯上包覆。当应力被释放时，硬质皮肤或包覆层（包括弹性或塑性变形或两者）在光纤芯和硬皮或包层的界面处形成褶皱，其在高度和间隔上周向定向且高度均匀其可以随意地通过材料的选择，拉伸以及包层的厚度和组成而变化。由于光纤芯部的弹性伸长率可以为200％以上，因此提供前所未有的测量范围。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式