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1. 发明申请

US20100167500A1 METHOD OF RECYCLING AN EPITAXIED DONOR WAFER 审中-公开
标题翻译：回收离子沉淀法的方法
公开(公告)号：US20100167500A1
公开(公告)日：2010-07-01
申请号：US12718804
申请日：2010-03-05
申请人： Nabil Chhaimi , Eric Guiot , Patrick Reynaud , Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Yves-Matthieu Le Vaillant
发明人： Nabil Chhaimi , Eric Guiot , Patrick Reynaud , Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Yves-Matthieu Le Vaillant
IPC分类号： H01L21/78
CPC分类号： H01L21/76254 , H01L21/02032
摘要： A method for forming a semiconductor structure that includes a thin layer of semiconductor material on a receiver wafer is disclosed. The method includes removing a thickness of material from a donor wafer, which comprises a support substrate and an epitaxial layer, for surface preparation and transferring a portion of the epitaxial layer from the donor wafer to the receiver wafer. The thickness removed during the surface preparation is adapted to enable formation of a new semiconductor structure from the remaining epitaxial portion of the donor wafer.
摘要翻译：公开了一种在接收器晶片上形成半导体材料薄层的半导体结构的方法。该方法包括从施主晶片去除材料的厚度，其包括支撑衬底和外延层，用于表面制备并将外延层的一部分从施主晶片转移到接收器晶片。在表面处理期间去除的厚度适于能够从施主晶片的剩余外延部分形成新的半导体结构。

2. 发明申请

US20110008948A1 METHOD FOR TRANSFERRING AN EPITAXIAL LAYER 有权
标题翻译：传输外延层的方法
公开(公告)号：US20110008948A1
公开(公告)日：2011-01-13
申请号：US12528573
申请日：2008-04-15
申请人： Yves-Matthieu Le Vaillant
发明人： Yves-Matthieu Le Vaillant
IPC分类号： H01L21/762
CPC分类号： H01L21/76251 , H01L21/02381 , H01L21/0242 , H01L21/0245 , H01L21/02458 , H01L21/0254 , H01L21/02546 , H01L21/02664 , H01L21/2007
摘要： A method for producing an epitaxial layer. First, a structure is fabricated by: formation of an intermediate layer on a donor substrate; and formation of the epitaxial layer on the intermediate layer by epitaxy; with the melting temperature of the intermediate layer being lower than the melting temperature of the epitaxial layer; and then a detachment step for transferring the epitaxial layer from the donor substrate. The detachment step includes applying at least one thermal treatment performed at a temperature of between the melting temperature of the intermediate layer and the melting temperature of the epitaxial layer.
摘要翻译：一种外延层的制造方法。首先，通过以下步骤制造结构：在施主衬底上形成中间层; 以及通过外延在中间层上形成外延层; 其中间层的熔融温度低于外延层的熔融温度; 然后用于从施主衬底转移外延层的分离步骤。分离步骤包括在中间层的熔融温度和外延层的熔融温度之间的温度下进行至少一种热处理。

3. 发明授权

US07465646B2 Methods for fabricating a wafer structure having a strained silicon utility layer 有权
标题翻译：用于制造具有应变硅实用层的晶片结构的方法
公开(公告)号：US07465646B2
公开(公告)日：2008-12-16
申请号：US11080936
申请日：2005-03-14
申请人： Yves-Matthieu Le Vaillant
发明人： Yves-Matthieu Le Vaillant
IPC分类号： H01L21/30
CPC分类号： H01L21/02032 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/02658 , H01L21/02664
摘要： Methods for fabricating a wafer structure having a strained silicon utility layer are described. In an embodiment, the method includes providing a prototype wafer having at least a support substrate and a strained silicon model layer upon the support substrate, and then providing a relaxed silicon-germanium layer on the strained silicon model layer. Next, a strained silicon utility layer is provided on the relaxed silicon-germanium layer to form an intermediate structure. The strained silicon utility layer has substantially the same characteristics as the strained silicon model layer. The method also includes detaching the strained silicon utility layer from the intermediate structure at a predetermined zone of weakness in the relaxed silicon-germanium layer to form a wafer structure having a strained silicon utility layer.
摘要翻译：描述了制造具有应变硅实用层的晶片结构的方法。在一个实施例中，该方法包括提供在支撑衬底上具有至少支撑衬底和应变硅模型层的原型晶片，然后在应变硅模型层上提供松弛的硅 - 锗层。接下来，在松散的硅 - 锗层上提供应变硅实用层以形成中间结构。应变硅实用层具有与应变硅模型层基本相同的特性。该方法还包括在松弛的硅 - 锗层中的预定弱化区域将应变硅应用层从中间结构分离，以形成具有应变硅实用层的晶片结构。

4. 发明授权

US07740735B2 Tools and methods for disuniting semiconductor wafers 有权
标题翻译：用于分离半导体晶片的工具和方法
公开(公告)号：US07740735B2
公开(公告)日：2010-06-22
申请号：US11567417
申请日：2006-12-06
申请人： Sebastien Kerdiles , Yves-Matthieu Le Vaillant
发明人： Sebastien Kerdiles , Yves-Matthieu Le Vaillant
IPC分类号： B32B38/10
CPC分类号： H01L21/68707 , G01N19/04 , H01L21/67092 , Y10S156/943 , Y10T29/53683 , Y10T83/0267 , Y10T156/1132 , Y10T156/1168 , Y10T156/1978 , Y10T156/1983
摘要： A tool and method for disuniting two wafers, wherein at least one of the wafers is used in fabricating substrates for microelectronics, optoelectronics, or optics. The method includes the steps of temporarily affixing two gripper members to respective opposite faces of the wafers; and sufficiently displacing one of the gripper members relative to the other for inducing controlled flexing in at least one of the members and for exerting a force close to one edge of the wafers to assist in disuniting the wafers. If desired, the bonding energy between two wafers can be determined by measuring the force exerted during the displacement step or measuring the separation of the wafers while performing the disuniting operation.
摘要翻译：一种用于分离两个晶片的工具和方法，其中至少一个晶片用于制造用于微电子学，光电子学或光学器件的衬底。该方法包括以下步骤：将两个夹持件暂时固定到晶片的各个相对面上; 并且相对于另一个充分地移动夹持构件中的一个，用于在至少一个构件中引起受控的弯曲并且用于施加接近晶片的一个边缘的力以帮助使晶片脱离。如果需要，可以通过测量在位移步骤期间施加的力或在执行分离操作时测量晶片的分离来确定两个晶片之间的结合能。

5. 发明申请

US20060081847A1 Methods for fabricating a wafer structure having a strained silicon utility layer 有权
标题翻译：用于制造具有应变硅实用层的晶片结构的方法
公开(公告)号：US20060081847A1
公开(公告)日：2006-04-20
申请号：US11080936
申请日：2005-03-14
申请人： Yves-Matthieu Le Vaillant
发明人： Yves-Matthieu Le Vaillant
IPC分类号： H01L29/30 , H01L21/20
CPC分类号： H01L21/02032 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/02658 , H01L21/02664
摘要： Methods for fabricating a wafer structure having a strained silicon utility layer are described. In an embodiment, the method includes providing a prototype wafer having at least a support substrate and a strained silicon model layer upon the support substrate, and then providing a relaxed silicon-germanium layer on the strained silicon model layer. Next, a strained silicon utility layer is provided on the relaxed silicon-germanium layer to form an intermediate structure. The strained silicon utility layer has substantially the same characteristics as the strained silicon model layer. The method also includes detaching the strained silicon utility layer from the intermediate structure at a predetermined zone of weakness in the relaxed silicon-germanium layer to form a wafer structure having a strained silicon utility layer.
摘要翻译：描述了制造具有应变硅实用层的晶片结构的方法。在一个实施例中，该方法包括提供在支撑衬底上具有至少支撑衬底和应变硅模型层的原型晶片，然后在应变硅模型层上提供松弛的硅 - 锗层。接下来，在松散的硅 - 锗层上提供应变硅实用层以形成中间结构。应变硅实用层具有与应变硅模型层基本相同的特性。该方法还包括在松弛的硅 - 锗层中的预定弱化区域将应变硅应用层从中间结构分离，以形成具有应变硅实用层的晶片结构。

6. 发明申请

US20070093039A1 TOOLS AND METHODS FOR DISUNITING SEMICONDUCTOR WAFERS 有权
标题翻译：用于散射半导体波长的工具和方法
公开(公告)号：US20070093039A1
公开(公告)日：2007-04-26
申请号：US11567417
申请日：2006-12-06
申请人： Sebastien Kerdiles , Yves-Matthieu Le Vaillant
发明人： Sebastien Kerdiles , Yves-Matthieu Le Vaillant
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46
CPC分类号： H01L21/68707 , G01N19/04 , H01L21/67092 , Y10S156/943 , Y10T29/53683 , Y10T83/0267 , Y10T156/1132 , Y10T156/1168 , Y10T156/1978 , Y10T156/1983
摘要： A tool and method for disuniting two wafers, wherein at least one of the wafers is used in fabricating substrates for microelectronics, optoelectronics, or optics. The method includes the steps of temporarily affixing two gripper members to respective opposite faces of the wafers; and sufficiently displacing one of the gripper members relative to the other for inducing controlled flexing in at least one of the members and for exerting a force close to one edge of the wafers to assist in disuniting the wafers. If desired, the bonding energy between two wafers can be determined by measuring the force exerted during the displacement step or measuring the separation of the wafers while performing the disuniting operation.
摘要翻译：一种用于分离两个晶片的工具和方法，其中至少一个晶片用于制造用于微电子学，光电子学或光学器件的衬底。该方法包括以下步骤：将两个夹持件暂时固定到晶片的各个相对面上; 并且相对于另一个充分地移动夹持构件中的一个，用于在至少一个构件中引起受控的弯曲并且用于施加接近晶片的一个边缘的力以帮助使晶片脱离。如果需要，可以通过测量在位移步骤期间施加的力或在执行分离操作时测量晶片的分离来确定两个晶片之间的结合能。

7. 发明授权

US07981768B2 Method for transferring an epitaxial layer 有权
标题翻译：转移外延层的方法
公开(公告)号：US07981768B2
公开(公告)日：2011-07-19
申请号：US12528573
申请日：2008-04-15
申请人： Yves-Matthieu Le Vaillant
发明人： Yves-Matthieu Le Vaillant
IPC分类号： H01L21/30
CPC分类号： H01L21/76251 , H01L21/02381 , H01L21/0242 , H01L21/0245 , H01L21/02458 , H01L21/0254 , H01L21/02546 , H01L21/02664 , H01L21/2007
摘要： A method for producing an epitaxial layer. First, a structure is fabricated by: formation of an intermediate layer on a donor substrate; and formation of the epitaxial layer on the intermediate layer by epitaxy; with the melting temperature of the intermediate layer being lower than the melting temperature of the epitaxial layer; and then a detachment step for transferring the epitaxial layer from the donor substrate. The detachment step includes applying at least one thermal treatment performed at a temperature of between the melting temperature of the intermediate layer and the melting temperature of the epitaxial layer.
摘要翻译：一种外延层的制造方法。首先，通过以下步骤制造结构：在施主衬底上形成中间层; 以及通过外延在中间层上形成外延层; 其中间层的熔融温度低于外延层的熔融温度; 然后用于从施主衬底转移外延层的分离步骤。分离步骤包括在中间层的熔融温度和外延层的熔融温度之间的温度下进行至少一种热处理。

8. 发明申请

US20110094668A1 SUBSTRATE WITH DETERMINATE THERMAL EXPANSION COEFFICIENT 审中-公开
标题翻译：具有确定热膨胀系数的基板
公开(公告)号：US20110094668A1
公开(公告)日：2011-04-28
申请号：US12983543
申请日：2011-01-03
申请人： Yves-Matthieu Le Vaillant
发明人： Yves-Matthieu Le Vaillant
IPC分类号： B32B38/10 , C30B25/02 , C30B23/02
CPC分类号： H01L21/76254 , C30B25/18
摘要： A process for reducing defects during formation of a transfer layer on a composite support having a central layer with a first thermal expansion coefficient. The method includes providing the composite support with at least one pair of lateral layers about the central layer, with the layers of each pair having second thermal expansion coefficients and thicknesses that are substantially identical to one another to thus provide the composite support with an overall thermal expansion coefficient that is sufficiently close to that of the transfer layer; conducting crystalline growth of the transfer layer on a growth substrate; bonding the transfer layer to the composite support; and removing the growth substrate to provide the transfer layer on the composite support without generating an excessive number of defects in the transfer layer due to the matching of the overall thermal expansion coefficients of the composite substrate and transfer layer.
摘要翻译：一种在具有第一热膨胀系数的中心层的复合载体上形成转移层期间减少缺陷的方法。该方法包括为复合载体提供围绕中心层的至少一对横向层，每对层具有彼此基本相同的第二热膨胀系数和厚度，从而为复合载体提供整体热膨胀系数足够接近转印层的膨胀系数; 在生长衬底上进行转移层的结晶生长; 将转移层粘合到复合载体上; 并且除去生长衬底以在复合衬底上提供转印层，而不会由于复合衬底和转印层的总热膨胀系数的匹配而在转印层中产生过多的缺陷。

9. 发明申请

US20070166968A1 Process for adjusting the strain on the surface or inside a substrate made of a semiconductor material 有权
标题翻译：用于调节由半导体材料制成的基板表面或内部的应变的方法
公开(公告)号：US20070166968A1
公开(公告)日：2007-07-19
申请号：US11372868
申请日：2006-03-10
申请人： Yves-Matthieu Le Vaillant
发明人： Yves-Matthieu Le Vaillant
IPC分类号： H01L21/04
CPC分类号： H01L29/7842 , H01L21/26506
摘要： This invention relates to a process for adjusting the strain in a strained layer on a substrate. The process steps include identifying one or more regions of the strained layer wherein the strain is to be adjusted; implanting elements into at least one of the regions thus identified in the strained layer; annealing the substrate with the strained layer to a temperature maintained for a sufficiently long time to cure crystalline defects caused by the implantation in the implanted region or regions.
摘要翻译：本发明涉及一种用于调整基底上的应变层中的应变的方法。所述方法步骤包括鉴定所述应变被调节的应变层的一个或多个区域; 将元件植入到由此在应变层中识别的至少一个区域中; 将具有应变层的衬底退火至保持足够长的时间的温度，以固化由注入区域或注入区域引起的结晶缺陷。

10. 发明授权

US07887936B2 Substrate with determinate thermal expansion coefficient 有权
标题翻译：具有确定的热膨胀系数的基体
公开(公告)号：US07887936B2
公开(公告)日：2011-02-15
申请号：US11472663
申请日：2006-06-21
申请人： Yves-Matthieu Le Vaillant
发明人： Yves-Matthieu Le Vaillant
IPC分类号： B32B9/04 , B32B13/04 , B32B9/00 , B32B19/00
CPC分类号： H01L21/76254 , C30B25/18
摘要： A composite support designed to successfully receive a transfer layer made of a crystalline material so that the assembly forms an epitaxy substrate, with the support having a longitudinal plane of symmetry parallel to its principal surfaces and a plurality of layers. The support includes a central first layer having a first thermal expansion coefficient at a specified temperature T and extending transversely on either side of the plane of symmetry and at least one pair of lateral layers. The layers of each pair, one with respect to the other, have arrangements in the composite support that are substantially symmetrical with respect to the plane of symmetry; second thermal expansion coefficients at the temperature T that are substantially identical to one another; and thicknesses that are substantially identical to one another. The layers of the support are made of materials that are chosen in such a way that the composite support has an overall thermal expansion coefficient at the temperature T that is sufficiently close to the thermal expansion coefficient of the material of the transferred layer at the temperature T to avoid generating an excessive number of defects in the transfer layer.
摘要翻译：一种复合支撑件，其被设计成成功地接收由结晶材料制成的转移层，使得所述组件形成外延衬底，所述支撑体具有平行于其主表面的纵向对称平面和多个层。支撑体包括具有在特定温度T下的第一热膨胀系数并在对称平面的任一侧上横向延伸的中心第一层和至少一对横向层。每对的层，一个相对于另一个，在复合载体中具有相对于对称平面基本对称的布置; 在温度T下彼此基本相同的第二热膨胀系数; 和彼此基本相同的厚度。载体层由以下方式选择的材料制成：复合载体在温度T处具有足够接近转移层材料的热膨胀系数的总体热膨胀系数，温度T 以避免在转移层中产生过多的缺陷。

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