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1. 发明授权

US11108361B2 Integrated multiple-path power amplifier with interdigitated transistors 有权
公开(公告)号：US11108361B2
公开(公告)日：2021-08-31
申请号：US16541551
申请日：2019-08-15
申请人： NXP USA, Inc.
发明人： Ibrahim Khalil , Hussain Hasanali Ladhani , Humayun Kabir
IPC分类号： H03F3/68 , H03F1/02 , H01L23/66 , H03F1/56 , H03F3/195 , H03F3/21
摘要： A multiple-path amplifier (e.g., a Doherty amplifier) includes first and second amplifier input terminals and an amplifier output terminal integrally-formed with a semiconductor die, and at least two amplifier cells positioned adjacent to each other between the amplifier input terminals and the amplifier output terminal. Each amplifier cell includes first and second transistors (e.g., field effect transistors) integrally-formed with the semiconductor die, where the first and second transistors each include a transistor input (e.g., a gate terminal) and a transistor output (e.g., a drain terminal). The first transistor input is coupled to the first amplifier input terminal, and the second transistor input is coupled to the second amplifier input terminal. A combining node is coupled to the second transistor output and to the amplifier output terminal, and a first phase shift element (e.g., an inductor) is electrically connected between the first transistor output and the combining node.

2. 发明授权

US11430743B1 Transistor with shield system including multilayer shield structure arrangement 有权
公开(公告)号：US11430743B1
公开(公告)日：2022-08-30
申请号：US17223410
申请日：2021-04-06
申请人： NXP USA, Inc.
发明人： Humayun Kabir , Michele Lynn Miera , Charles John Lessard , Ibrahim Khalil
IPC分类号： H01L23/522 , H01L21/768 , H01L23/552 , H01L23/535 , H01L29/78
摘要： A transistor includes a semiconductor substrate having first and second terminals. An interconnect structure, on an upper surface of the substrate, is formed of layers of dielectric material and electrically conductive material. The conductive material includes a first pillar connected with the first terminal, a second pillar connected with the second terminal, and a shield system between the first and second pillars. The shield system includes forked structures formed in at least two conductive layers of the interconnect structure and at least partially surrounding segments of the second pillar. The shield system may additionally include shield traces formed in a first conductive layer positioned between gate fingers and the first pillars and/or the shield system may include shield runners that are located in an electrically conductive layer that is below a topmost electrically conductive layer with the first pillar being connected to a runner in the topmost conductive layer.

3. 发明申请

US20230019549A1 Transistor With Center Fed Gate 有权
公开(公告)号：US20230019549A1
公开(公告)日：2023-01-19
申请号：US17376026
申请日：2021-07-14
申请人： NXP USA, Inc.
发明人： Vikas Shilimkar , Kevin Kim , Daniel Joseph Lamey , Bruce McRae Green , Ibrahim Khalil , Humayun Kabir
IPC分类号： H01L29/417 , H01L29/778 , H01L23/48 , H01L23/00 , H01L29/40
摘要： A transistor includes a source contact connected to a Through-Silicon Via (TSV). A drain contact is connected to a first pad. A gate structure is interposed between the source contact and the drain contact. A second pad is connected to the gate structure, the second pad comprising a first side diametrically opposed to a second side, and a third side interposed therebetween, the source contact proximal to the third side, a first portion of the first side and a second portion of the second side.

4. 发明申请

US20220376060A1 SEMICONDUCTOR DEVICE WITH CONDUCTIVE ELEMENT FORMED OVER DIELECTRIC LAYERS AND METHOD OF FABRICATION THEREFOR 有权
公开(公告)号：US20220376060A1
公开(公告)日：2022-11-24
申请号：US17325995
申请日：2021-05-20
申请人： NXP USA, INC.
发明人： Bernhard Grote , Humayun Kabir , Ibrahim Khalil , Bruce McRae Green
IPC分类号： H01L29/40 , H01L29/20 , H01L29/205 , H01L29/778 , H01L21/76 , H01L21/765 , H01L29/66
摘要： An embodiment of a semiconductor device includes a semiconductor substrate, a first current-carrying electrode, and a second current-carrying electrode formed over the semiconductor, a control electrode formed over the semiconductor substrate between the first current carrying electrode and the second current carrying electrode, and a first dielectric layer disposed over the control electrode, and a second dielectric layer disposed over the first dielectric layer. A first opening is formed in the second dielectric layer, adjacent the control electrode and the second current-carrying electrode, having a first edge laterally adjacent to and nearer the second current-carrying electrode, and a second edge laterally adjacent to and nearer to the control electrode, and a conductive element formed over the first dielectric layer and within the first opening, wherein the portion of the conductive element formed within the first opening forms a first metal-insulator-semiconductor region within the first opening.

5. 发明授权

US10672703B2 Transistor with shield structure, packaged device, and method of fabrication 审中-公开
公开(公告)号：US10672703B2
公开(公告)日：2020-06-02
申请号：US16142713
申请日：2018-09-26
申请人： NXP USA, Inc.
发明人： Vikas Shilimkar , Kevin Kim , Hernan Rueda , Humayun Kabir
IPC分类号： H01L23/522 , H01L23/528 , H01L23/31 , H01L21/56 , H01L27/088 , H01L21/8234
摘要： A transistor includes a semiconductor substrate having an active device region formed therein and an interconnect structure on a first surface of the semiconductor substrate. The interconnect structure is formed of multiple layers of dielectric material and electrically conductive material. Drain and gate runners are formed in the interconnect structure. A shield structure extends above a second surface of the interconnect structure, the shield structure being positioned between the drain and gate runners.

6. 发明授权

US11387169B2 Transistor with I/O ports in an active area of the transistor 有权
公开(公告)号：US11387169B2
公开(公告)日：2022-07-12
申请号：US16984286
申请日：2020-08-04
申请人： NXP USA, Inc.
发明人： Ibrahim Khalil , Kevin Kim , Humayun Kabir
IPC分类号： H01L23/482 , H01L23/48 , H01L23/00
摘要： A semiconductor device includes an active region formed in a substrate. The active region includes input fingers, output fingers, and common fingers disposed within the substrate and oriented substantially parallel to one another. An input port is electrically connected to the input fingers and an output port is electrically connected to the output fingers. A common region is electrically connected to the common fingers. At least one of the input and output ports is positioned within the active region between the input, output, and common fingers. The common region is interposed between a pair of the common fingers such that the common fingers of the pair are spaced apart by a gap, and at least one of the input and output ports is position in the gap.

7. 发明申请

US20200098683A1 TRANSISTOR WITH SHIELD STRUCTURE, PACKAGED DEVICE, AND METHOD OF FABRICATION 审中-公开
公开(公告)号：US20200098683A1
公开(公告)日：2020-03-26
申请号：US16142713
申请日：2018-09-26
申请人： NXP USA, Inc.
发明人： Vikas Shilimkar , Kevin Kim , Hernan Rueda , Humayun Kabir
IPC分类号： H01L23/522 , H01L23/528 , H01L23/31 , H01L21/8234 , H01L21/56 , H01L27/088
摘要： A transistor includes a semiconductor substrate having an active device region formed therein and an interconnect structure on a first surface of the semiconductor substrate. The interconnect structure is formed of multiple layers of dielectric material and electrically conductive material. Drain and gate runners are formed in the interconnect structure. A shield structure extends above a second surface of the interconnect structure, the shield structure being positioned between the drain and gate runners.

8. 发明授权

US11430874B2 Semiconductor device with a crossing region 有权
公开(公告)号：US11430874B2
公开(公告)日：2022-08-30
申请号：US17123939
申请日：2020-12-16
申请人： NXP USA, INC.
发明人： Humayun Kabir , Ibrahim Khalil
IPC分类号： H01L29/06 , H01L29/417 , H01L29/78 , H01L23/66
摘要： A semiconductor device includes a semiconductor substrate, a first current-carrying electrode, a second current-carrying electrode, a first control electrode disposed between the first current-carrying electrode and the second current-carrying electrode, a third current-carrying electrode electrically coupled to the first current-carrying electrode, and a fourth current-carrying electrode adjacent the third current-carrying electrode. The third current-carrying electrode and the fourth current-carrying electrode are configured to support current flow from the third current-carrying electrode to the fourth current-carrying electrode parallel to a second direction. The fourth current-carrying element is electrically coupled to the second current-carrying electrode and a second control electrode. The second control electrode is electrically coupled to the first control electrode. A first crossing region is electrically coupled to the first control electrode and a second crossing region is electrically coupled to the fourth current-carrying electrode, wherein the second crossing region crosses a portion of the first crossing region.

9. 发明申请

US20220190126A1 SEMICONDUCTOR DEVICE WITH A CROSSING REGION 有权
公开(公告)号：US20220190126A1
公开(公告)日：2022-06-16
申请号：US17123939
申请日：2020-12-16
申请人： NXP USA, INC.
发明人： Humayun Kabir , Ibrahim Khalil
IPC分类号： H01L29/417 , H01L23/66 , H01L29/78 , H01L29/06
摘要： A semiconductor device includes a semiconductor substrate, a first current-carrying electrode, a second current-carrying electrode, a first control electrode disposed between the first current-carrying electrode and the second current-carrying electrode, a third current-carrying electrode electrically coupled to the first current-carrying electrode, and a fourth current-carrying electrode adjacent the third current-carrying electrode. The third current-carrying electrode and the fourth current-carrying electrode are configured to support current flow from the third current-carrying electrode to the fourth current-carrying electrode parallel to a second direction. The fourth current-carrying element is electrically coupled to the second current-carrying electrode and a second control electrode. The second control electrode is electrically coupled to the first control electrode. A first crossing region is electrically coupled to the first control electrode and a second crossing region is electrically coupled to the fourth current-carrying electrode, wherein the second crossing region crosses a portion of the first crossing region.

10. 发明申请

US20220013451A1 COMPACT TRANSISTOR UTILIZING SHIELD STRUCTURE ARRANGEMENT 有权
公开(公告)号：US20220013451A1
公开(公告)日：2022-01-13
申请号：US17448709
申请日：2021-09-24
申请人： NXP USA, Inc.
发明人： Vikas Shilimkar , Kevin Kim , Charles John Lessard , Humayun Kabir
IPC分类号： H01L23/522 , H01L23/528
摘要： A transistor includes a semiconductor substrate having a first terminal and a second terminal. An interconnect structure is formed on an upper surface of the semiconductor substrate, the interconnect structure being formed of multiple layers of dielectric material and electrically conductive material. The electrically conductive material of the interconnect structure includes a pillar in electrical contact with the first terminal, a first runner electrically connected to the pillar, a tap interconnect in electrical contact with the second terminal, a second runner electrically connected to the tap interconnect, a shield structure positioned between the pillar and the tap interconnect, and a shield runner electrically connected to the shield structure, the shield runner overlying the second runner in a direction perpendicular to the upper surface of the semiconductor substrate.

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