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1. 发明申请

US20190006552A1 METHOD OF MANUFACTURING PATTERNED SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
公开(公告)号：US20190006552A1
公开(公告)日：2019-01-03
申请号：US16020663
申请日：2018-06-27
申请人： NICHIA CORPORATION
发明人： Yuki KANAGAWA , Kei MURAKAMI
IPC分类号： H01L33/00 , H01L21/033 , H01L33/36
CPC分类号： H01L33/007 , G03F1/50 , G03F1/54 , G03F7/70475 , H01L21/0332 , H01L21/0337 , H01L33/36
摘要： A method of manufacturing a patterned substrate includes: providing an exposure mask, the exposure mask comprising: a plurality of inner light-shielding portions arranged in a lattice, a light-transmissive portion integrally connecting regions surrounding the plurality of inner light-shielding portions, and an outer light-shielding portion surrounding the light-transmissive portion; performing a plurality of exposures of a photoresist layer disposed on a substrate in a step-and-repeat-manner using the exposure mask, so as to form a plurality of inner projected parts corresponding to the inner light-shielding portions, the inner projected parts being aligned in a lattice as a whole; developing the photoresist layer on which the plurality of exposures have been performed; and etching the substrate using the developed photoresist layer as a mask; wherein, in the step of performing the plurality of exposures, a region corresponding to the light-transmissive portion formed by a predetermined one of the exposures and a region corresponding to the light-transmissive portion formed by another one of the exposures do not overlap each other on shortest straight lines connecting outermost inner projected parts formed by the predetermined exposure and respective inner projected parts formed by the another exposure that are located closest to the outermost inner projected parts of the predetermined exposure, while portions of the region corresponding to the light-transmissive portion formed by the predetermined exposure and portions of the region corresponding to the light-transmissive portion formed by the another exposure overlap each other in places other than the shortest straight lines.

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