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1. 发明申请

US20130015466A1 EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：用于半导体器件和半导体器件的外延衬底
公开(公告)号：US20130015466A1
公开(公告)日：2013-01-17
申请号：US13623308
申请日：2012-09-20
申请人： NGK Insulators, Ltd.
发明人： Makoto MIYOSHI , Mikiya ICHIMURA , Tomohiko SUGIYAMA , Mitsuhiro TANAKA
IPC分类号： H01L29/20
CPC分类号： H01L29/7786 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L29/201 , H01L29/34 , H01L29/475 , H01L29/66068 , H01L29/66462
摘要： Provided is an epitaxial substrate for a semiconductor device, which has excellent schottky contact characteristics that are stable over time. The epitaxial substrate for a semiconductor device includes a base substrate, a channel layer formed of a first group III nitride containing at least Ga and having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1), and a barrier layer formed of a second group III nitride containing at least In and Al and having a composition of Inx2Aly2Gaz2N (x2+y2+z2=1), wherein the barrier layer has tensile strains in an in-plane direction, and pits are formed on a surface of the barrier layer at a surface density of 5×107/cm2 or more and 1×109/cm2 or less.
摘要翻译：提供了一种半导体器件的外延衬底，其具有优异的随时间稳定的肖特基接触特性。用于半导体器件的外延衬底包括基底，由至少含有Ga的第一III族氮化物形成的沟道层，并且具有Inx1Ally1Gaz1N（x1 + y1 + z1 = 1）的组成，以及由第二至少包含In和Al并且具有Inx2Aly2Gaz2N（x2 + y2 + z2 = 1）的组成的III族氮化物，其中阻挡层在面内方向上具有拉伸应变，并且在阻挡层的表面上形成凹坑表面密度为5×10 7 / cm 2以上且1×10 9 / cm 2以下。

2. 发明申请

US20130134439A1 EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT, PN JUNCTION DIODE, AND METHOD FOR MANUFACTURING AN EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT 有权
标题翻译：用于半导体元件的外延衬底，半导体元件，PN结二极管及其制造用于半导体元件的外延衬底的方法
公开(公告)号：US20130134439A1
公开(公告)日：2013-05-30
申请号：US13746879
申请日：2013-01-22
申请人： NGK Insulators, Ltd.
发明人： Makoto MIYOSHI , Tomohiko SUGIYAMA , Mikiya ICHIMURA , Mitsuhiro TANAKA
IPC分类号： H01L29/778 , H01L21/02 , H01L29/20
CPC分类号： H01L29/778 , C30B23/025 , C30B25/183 , C30B29/403 , H01L21/02104 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L29/2003 , H01L29/66204 , H01L29/66462 , H01L29/7786 , H01L29/861
摘要： Provided is an epitaxial substrate for use in a semiconductor element, having excellent characteristics and capable of suitably suppressing diffusion of elements from a cap layer. An epitaxial substrate for use in a semiconductor element, in which a group of group-III nitride layers are laminated on a base substrate such that a (0001) crystal plane of the group of group-III nitride layers is substantially in parallel with a substrate surface of the base substrate, includes: a channel layer made of a first group-III nitride having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1, z1>0); a barrier layer made of a second group-III nitride having a composition of Inx2Aly2N (x2+y2=1, x2>0, y2>0); an anti-diffusion layer made of AlN and having a thickness of 3 nm or more; and a cap layer made of a third group-III nitride having a composition of Inx3Aly3Gaz3N (x3+y3+z3=1, z3>0).
摘要翻译：提供一种用于半导体元件的外延衬底，具有优异的特性并且能够适当地抑制元件从盖层的扩散。一种用于半导体元件的外延衬底，其中一组III族氮化物层被层叠在基底衬底上，使得III族氮化物层组的（0001）晶面基本上与衬底平行基底基板的表面包括：由具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1，z1> 0）的组成的第一III族氮化物制成的沟道层; 由具有Inx2Aly2N（x2 + y2 = 1，x2> 0，y2> 0）的组成的第二III族氮化物制成的阻挡层; 由AlN制成的厚度为3nm以上的防扩散层，和由具有In x3Ally3Gaz3N（x3 + y3 + z3 = 1，z3> 0）的组成的第三III族氮化物制成的覆盖层。

3. 发明申请

US20130026488A1 EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE 失效
标题翻译：外延基板和制造外延基板的方法
公开(公告)号：US20130026488A1
公开(公告)日：2013-01-31
申请号：US13644651
申请日：2012-10-04
申请人： NGK Insulators, Ltd.
发明人： Makoto MIYOSHI , Shigeaki SUMIYA , Mikiya ICHIMURA , Sota MAEHARA , Mitsuhiro TANAKA
IPC分类号： H01L29/205 , H01L21/20
CPC分类号： H01L29/155 , C30B25/183 , C30B29/403 , H01L21/02381 , H01L21/02458 , H01L21/02494 , H01L21/02507 , H01L21/02516 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L29/045 , H01L29/1075 , H01L29/2003 , H01L29/7786 , H01L29/872
摘要： Provided is a crack-free epitaxial substrate having excellent breakdown voltage properties in which a silicon substrate is used as a base substrate thereof. The epitaxial substrate includes: a (111) single crystal Si substrate and a buffer layer including a plurality of composition modulation layers each formed of a first composition layer made of AlN and a second composition layer made of AlxGa1-xN (0≦x x(n) is satisfied, where n represents the number of laminations of each of the first and the second composition layer, and x(i) represents the value of x in i-th one of the second composition layers as counted from the base substrate side. Each of the second composition layers is formed so as to be in a coherent state relative to the first composition layer.
摘要翻译：本发明提供一种无硅外延基板，其具有优良的击穿电压特性，其中使用硅基板作为其基底。外延衬底包括：（111）单晶Si衬底和包括多个组成调制层的缓冲层，每个组成调制层由由AlN制成的第一组成层和由Al x Ga 1-x N（0＆amp; ）交替层压。 x（1）≥x（2）≥的关系。。。 ≧x（n-1）≥x（n）和x（1）> x（n），其中n表示第一和第二组合物层中的每一个的叠层数，x（i）从基底侧计数的第i组合物层中的第i个的x值。每个第二组合物层相对于第一组合物层形成为相干状态。

4. 发明申请

US20130119437A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20130119437A1
公开(公告)日：2013-05-16
申请号：US13713318
申请日：2012-12-13
申请人： NGK Insulators, Ltd.
发明人： Makoto MIYOSHI , Yoshitaka KURAOKA
IPC分类号： H01L29/267
CPC分类号： H01L29/267 , H01L29/2003 , H01L29/861 , H01L29/872
摘要： A semiconductor device having small leakage current and high breakdown voltage during reverse blocking, small on-state resistance and large output current at forward conduction, short reverse recovery time at shutoff, and high peak surge current value is provided. An n-type layer is made of a group-III nitride, and a p-type layer is made of a group-IV semiconductor material having a smaller band gap than the group-III nitride. The energy level at the top of the valence band of the n-type layer is lower than the energy level at the top of the valence band of the p-type layer, so that a P-N junction semiconductor device satisfying the above requirements is obtained. Further, a combined structure of P-N junction and Schottky junction by additionally providing an anode electrode to be in Schottky contact with the n-type layer also achieves the effect of decreasing voltage at the rising edge of current resulting from the Schottky junction.
摘要翻译：提供了在反向阻断时具有小的漏电流和高击穿电压的半导体器件，小导通状态电阻和正向导通时的大输出电流，关断时的反向恢复时间短以及高峰值浪涌电流值。 n型层由III族氮化物制成，p型层由具有比III族氮化物更小的带隙的IV族半导体材料制成。 n型层的价带顶部的能级低于p型层的价带顶部的能级，从而获得满足上述要求的P-N结半导体器件。此外，通过额外提供与n型层肖特基接触的阳极电极，P-N结和肖特基结的组合结构也实现了在肖特基结的电流上升沿降低电压的效果。

5. 发明申请

US20130026486A1 EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE 审中-公开
标题翻译：外延基板和制造外延基板的方法
公开(公告)号：US20130026486A1
公开(公告)日：2013-01-31
申请号：US13633375
申请日：2012-10-02
申请人： NGK Insulators, Ltd.
发明人： Makoto MIYOSHI , Shigeaki SUMIYA , Mikiya ICHIMURA , Sota MAEHARA , Mitsuhiro TANAKA
IPC分类号： H01L29/205 , H01L21/20
CPC分类号： H01L29/872 , C30B25/183 , C30B29/403 , H01L21/02381 , H01L21/02458 , H01L21/02494 , H01L21/02507 , H01L21/02516 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L29/1075 , H01L29/155 , H01L29/2003 , H01L29/7786
摘要： Provided is a crack-free epitaxial substrate having excellent breakdown voltage properties in which a silicon substrate is used as a base substrate thereof. The epitaxial substrate includes: a (111) single crystal Si substrate and a buffer layer including a composition modulation layer that is formed of a first composition layer made of AlN and a second composition layer made of AlxGa1-xN (0≦x x(n) is satisfied, where n represents the number of laminations of each of the first and the second composition layer (n is a natural number equal to or greater than two), and x(i) represents the value of x in i-th one of the second composition layers as counted from the base substrate side, to thereby cause a compressive strain to exist such that the compressive strain increases in a portion more distant from the base substrate.
摘要翻译：本发明提供一种无硅外延基板，其具有优良的击穿电压特性，其中使用硅基板作为其基底。外延衬底包括：（111）单晶Si衬底和包括由AlN制成的第一组成层和由Al x Ga 1-x N（0＆lt; 1; x 1）制成的第二组成层形成的组成调制层的缓冲层; 交替层压。 x（1）≥x（2）≥的关系。。。 ≧x（n-1）≥x（n）和x（1）> x（n），其中n表示第一和第二组合物层中的每一个的叠层数（n是等于或大于2），并且x（i）表示从基底侧计数的第i组合物层中的x的值，从而导致压缩应变存在，使得压缩应变在部分比基底更远。

6. 发明申请

US20130181327A1 EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 有权
标题翻译：用于半导体器件的外延衬底，用于制造用于半导体器件的外延衬底的方法和半导体器件
公开(公告)号：US20130181327A1
公开(公告)日：2013-07-18
申请号：US13789993
申请日：2013-03-08
申请人： NGK INSULATORS, LTD.
发明人： Makoto MIYOSHI , Mikiya ICHIMURA , Sota MAEHARA , Mitsuhiro TANAKA
IPC分类号： H01L29/06 , H01L21/02
CPC分类号： H01L29/0661 , C23C16/303 , C30B23/025 , C30B25/183 , C30B29/403 , H01L21/02365 , H01L21/02381 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/02494 , H01L21/02507 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L29/155 , H01L29/2003
摘要： Provided is a crack-free epitaxial substrate having a small amount of dislocations in which a silicon substrate is used as a base substrate. An epitaxial substrate includes a substrate made of (111) single crystal silicon and a base layer group in which a plurality of base layers are laminated. Each of the plurality of base layers includes a first group-III nitride layer made of AlN and a second group-III nitride layer made of AlyyGazzN formed on the first group-III nitride layer. The first group-III nitride layer has many crystal defects. An interface between the first and second group-III nitride layers is a three-dimensional concavo-convex surface. In the base layer other than the base layer formed immediately above the base substrate, the first group-III nitride layer has a thickness of 50 nm or more and 100 nm or less and the second group-III nitride layer satisfies 0≦yy≦0.2.
摘要翻译：本发明提供一种具有少量位错的无裂纹的外延衬底，其中使用硅衬底作为基底。外延衬底包括由（111）单晶硅制成的衬底和层叠有多个基底层的基底层组。多个基层中的每一个包括由AlN制成的第一III族氮化物层和形成在第一III族氮化物层上的由AllyGazzN制成的第二III族氮化物层。第一III族氮化物层具有许多晶体缺陷。第一和第二III族氮化物层之间的界面是三维凹凸表面。在基底层正上方形成的基底层以外的基底层中，第一III族氮化物层的厚度为50nm以上且100nm以下，第二III族氮化物层满足0≤yy≤0.2 。

7. 发明申请

US20130092953A1 EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE 有权
标题翻译：外延基板和制造外延基板的方法
公开(公告)号：US20130092953A1
公开(公告)日：2013-04-18
申请号：US13705554
申请日：2012-12-05
申请人： NGK Insulators, Ltd.
发明人： Makoto MIYOSHI , Shigeaki SUMIYA , Mikiya ICHIMURA , Sota MAEHARA , Mitsuhiro TANAKA
IPC分类号： H01L29/20 , H01L21/02
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L29/1029 , H01L29/155 , H01L29/7787
摘要： Provided is a crack-free epitaxial substrate having a small amount of warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes: a (111) single crystal Si substrate and a buffer layer formed of a plurality of lamination units being continuously laminated. The lamination unit includes: a composition modulation layer formed of a first and a second unit layer having different compositions being alternately and repeatedly laminated such that a compressive strain exists therein; a termination layer formed on an uppermost portion of the composition modulation layer, the termination layer acting to maintain the compressive strain existing in the composition modulation layer; and a strain reinforcing layer formed on the termination layer, the strain reinforcing layer acting to enhance the compressive strain existing in the composition modulation layer.
摘要翻译：提供了具有少量翘曲的无裂纹外延基板，其中使用硅基板作为基底。外延衬底包括：（111）单晶Si衬底和由多个层压单元形成的缓冲层，其被连续层压。层压单元包括：由具有不同组成的第一单元层和第二单元层形成的组成调制层，其交替重复层压，使其中存在压缩应变; 形成在所述组合物调制层的最上部的终止层，所述终止层用于保持存在于所述组成调制层中的压缩应变; 以及在所述端接层上形成的应变增强层，所述应变增强层用于增强存在于所述组成调制层中的压缩应变。

8. 发明申请

US20130168734A1 EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：用于半导体器件的外延衬底，半导体器件，制造用于半导体器件的外延衬底的方法，以及制造半导体器件的方法
公开(公告)号：US20130168734A1
公开(公告)日：2013-07-04
申请号：US13772704
申请日：2013-02-21
申请人： NGK Insulators, Ltd.
发明人： Makoto MIYOSHI , Mikiya ICHIMURA , Mitsuhiro TANAKA
IPC分类号： H01L29/778 , H01L29/66
CPC分类号： H01L29/778 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/205 , H01L29/66431 , H01L29/66462 , H01L29/7786 , H01L29/7787
摘要： Provided is a semiconductor device of normally-off operation type having a low on-resistance. An epitaxial substrate for it includes: a base substrate; a channel layer made of a first group-III nitride having a composition of Inx1Aly1Gaz1N at least containing Al and Ga and x1=0 and 0≦y1≦0.3; and a barrier layer made of a second group-III nitride having a composition of Inx2Aly2Gaz2N at least containing In and Al. The composition of the second group-III nitride is, in a ternary phase diagram for InN, AlN, and GaN, in a certain range that is determined in accordance with the composition of the first group-III nitride. The barrier layer has a thickness of 3 nm or less. A low-crystallinity insulating layer is further formed on the barrier layer. The low-crystallinity insulating layer is made of silicon nitride and has a thickness of 3 nm or less.
摘要翻译：提供具有低导通电阻的常关操作型半导体器件。其外延衬底包括：基底; 至少包含Al和Ga以及x1 = 0和0 @ y1 @ 0.3的具有Inx1Aly1Gaz1N组成的第一III族氮化物的沟道层; 以及由具有至少含有In和Al的In x Al 2 Al 2 Ga 2 N 3的组成的第二III族氮化物制成的阻挡层。在根据第一III族氮化物的组成确定的一定范围内，InN，AlN和GaN的三元相图中的第二III族氮化物的组成。阻挡层的厚度为3nm以下。在阻挡层上进一步形成低结晶度绝缘层。低结晶度绝缘层由氮化硅制成，厚度为3nm以下。

9. 发明申请

US20130043488A1 EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE 有权
标题翻译：外延基板和制造外延基板的方法
公开(公告)号：US20130043488A1
公开(公告)日：2013-02-21
申请号：US13658293
申请日：2012-10-23
申请人： NGK Insulators, Ltd.
发明人： Makoto MIYOSHI , Shigeaki SUMIYA , Mikiya ICHIMURA , Sota MAEHARA , Mitsuhiro TANAKA
IPC分类号： H01L29/205 , H01L21/20
CPC分类号： H01L21/02381 , C30B25/183 , C30B29/403 , H01L21/02458 , H01L21/02494 , H01L21/02507 , H01L21/02516 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L29/045 , H01L29/155 , H01L29/2003 , H01L29/205
摘要： Provided is a crack-free epitaxial substrate having excellent breakdown voltage properties in which a silicon substrate is used as a base. The epitaxial substrate includes a (111) single crystal Si substrate and a buffer layer including a plurality of first lamination units. Each of those units includes a composition modulation layer formed of a first composition layer made of AlN and a second composition layer made of AlxGa1-xN being alternately laminated, and a first intermediate layer made of AlyGa1-yN (0≦y≦1). The relationship of x(1)≧x(2)≧ . . . ≧x(n−1)≧x(n) and x(1)≧x(n) is satisfied, where n represents the number of laminations of each of the first and second composition layers, and x(i) represents the value of x in i-th one of the second composition layers as counted from the base substrate side. The second composition layer is coherent to the first composition layer, and the first intermediate layer is coherent to the composition modulation layer.
摘要翻译：本发明提供一种无硅外延基板，其以硅基板为基体，具有优异的击穿电压特性。外延衬底包括（111）单晶Si衬底和包括多个第一层压单元的缓冲层。这些单元中的每一个包括由AlN制成的第一组合物层和由Al x Ga 1-x N交替层压的第二组合物层和由Al y Ga 1-y N（0＆lt; 1，y＆n 1; 1）制成的第一中间层形成的组成调制层。 x（1）≥x（2）≥的关系。。。 ≧x（n-1）≥X（n）和x（1）≧x（n），其中n表示第一和第二组合物层中的每一个的叠层数，x（i）从基底侧计数的第二组合物层的第i个中的x。第二组合物层与第一组合物层相干，第一中间层与组成调制层相干。

10. 发明申请

US20130020583A1 EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE 审中-公开
标题翻译：外延基板和制造外延基板的方法
公开(公告)号：US20130020583A1
公开(公告)日：2013-01-24
申请号：US13627206
申请日：2012-09-26
申请人： NGK Insulators, Ltd.
发明人： Makoto MIYOSHI , Shigeaki SUMIYA , Mikiya ICHIMURA , Sota MAEHARA , Mitsuhiro TANAKA
IPC分类号： H01L29/205 , H01L21/20 , H01L29/20
CPC分类号： H01L29/045 , C30B25/183 , C30B29/403 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/7787
摘要： Provided is a crack-free epitaxial substrate. The epitaxial substrate includes: a (111) single crystal Si substrate and a buffer layer formed of a first and a second lamination unit being alternately laminated such that each of an uppermost and a lowermost portion of the buffer layer is formed of the first lamination unit. The first lamination unit is formed of a first and a second composition layer having different compositions being alternately laminated so as to increase the thickness of the second composition layer in a portion more distant from the base substrate side, to thereby cause a compressive strain to exist in the first lamination unit such that it increases in a portion more distant from the base substrate. The second lamination unit is formed as an intermediate layer that is substantially strain-free and formed with a thickness of 15 nm or more and 150 nm or less.
摘要翻译：提供了一种无裂纹的外延衬底。外延衬底包括：（111）单晶Si衬底和由第一和第二层压单元形成的缓冲层交替层叠，使得缓冲层的最上部分和最下部分由第一层压单元形成。第一层压单元由具有不同组成的第一和第二组合物层交替层叠形成，以便在远离基底侧的部分增加第二组合物层的厚度，从而导致压应变存在在第一层压单元中使得其在远离基底的部分增加。第二层压单元形成为基本上无应变的中间层，并形成为15nm以上且150nm以下的厚度。

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