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1. 发明授权

US11082025B2 Joined body of piezoelectric material substrate and support substrate 有权
公开(公告)号：US11082025B2
公开(公告)日：2021-08-03
申请号：US17096199
申请日：2020-11-12
申请人： NGK INSULATORS, LTD.
发明人： Yuji Hori , Tatsuro Takagaki
IPC分类号： H03H9/02 , H01L41/312 , H03H3/08 , H03H9/25
摘要： A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and the piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. The bonding layer includes a void extending from the piezoelectric material substrate to the supporting substrate.

2. 外观设计

USD849422S1 Composite substrate for acoustic wave device 有权
公开(公告)号：USD849422S1
公开(公告)日：2019-05-28
申请号：US29581281
申请日：2016-10-18
申请人： NGK INSULATORS, LTD.
设计人： Tomoyoshi Tai , Yuji Hori

3. 发明申请

US20190036000A1 Composite Substrate and Method of Producing the Same 审中-公开
公开(公告)号：US20190036000A1
公开(公告)日：2019-01-31
申请号：US16148448
申请日：2018-10-01
申请人： NGK INSULATORS, LTD. , NGK CERAMIC DEVICE CO., LTD.
发明人： Tomoyoshi Tai , Yuji Hori , Takahiro Yamadera , Ryosuke Hattori , Kengo Suzuki
IPC分类号： H01L41/08 , H03H9/02 , H01L41/312 , H01L41/277
摘要： In the composite substrate, the piezoelectric substrate and the support substrate are bonded by direct bonding using an ion beam. One surface of the piezoelectric substrate is a negatively-polarized surface and another surface of the piezoelectric substrate is a positively-polarized surface. An etching rate at which the negatively-polarized surface is etched with a strong acid may be higher than an etching rate at which the positively-polarized surface is etched with the strong acid. The positively-polarized surface of the piezoelectric substrate is directly bonded to the support substrate. The negatively-polarized surface of the piezoelectric substrate may be etched with the strong acid.

4. 发明授权

US09917246B2 Composite substrate, production method thereof, and acoustic wave device 有权
公开(公告)号：US09917246B2
公开(公告)日：2018-03-13
申请号：US14737655
申请日：2015-06-12
申请人： NGK INSULATORS, LTD.
发明人： Yuji Hori , Tomoyoshi Tai , Mitsuo Ikejiri
IPC分类号： B44C1/22 , H01L41/332 , H01L21/321 , H03H3/08 , H03H9/02 , H01L41/337 , H01L41/312 , H01L41/107
CPC分类号： H01L41/332 , H01L21/3212 , H01L41/107 , H01L41/312 , H01L41/337 , H03H3/08 , H03H9/02574 , Y10T428/21
摘要： A composite substrate production method of the invention includes (a) a step of mirror polishing a substrate stack having a diameter of 4 inch or more, the substrate stack including a piezoelectric substrate and a support substrate bonded to each other, the mirror polishing being performed on the piezoelectric substrate side until the thickness of the piezoelectric substrate reaches 3 μm or less; (b) a step of creating data of the distribution of the thickness of the mirror-polished piezoelectric substrate; and (c) a step of performing machining with an ion beam machine based on the data of the thickness distribution so as to produce a composite substrate have some special technical features.

5. 发明申请

US20160133823A1 COMPOSITE SUBSTRATE AND METHOD OF PRODUCING THE SAME 审中-公开
标题翻译：复合基材及其制造方法
公开(公告)号：US20160133823A1
公开(公告)日：2016-05-12
申请号：US15001501
申请日：2016-01-20
申请人： NGK INSULATORS, LTD. , NGK CERAMIC DEVICE CO., LTD.
发明人： Tomoyoshi Tai , Yuji Hori , Takahiro Yamadera , Ryosuke Hattori , Kengo Suzuki
IPC分类号： H01L41/08 , H01L41/277
CPC分类号： H01L41/081 , H01L41/277 , H01L41/312 , H03H3/10 , H03H9/02574 , H03H9/02834
摘要： In the composite substrate 10, the piezoelectric substrate 12 and the support substrate 14 are bonded by direct bonding using an ion beam. One surface of the piezoelectric substrate 12 is a negatively-polarized surface 12a and another surface of the piezoelectric substrate 12 is a positively-polarized surface 12b. An etching rate at which the negatively-polarized surface 12a is etched with a strong acid may be higher than an etching rate at which the positively-polarized surface 12b is etched with the strong acid. The positively-polarized surface 12b of the piezoelectric substrate 12 is directly bonded to the support substrate 14. The negatively-polarized surface 12a of the piezoelectric substrate 12 may be etched with the strong acid.
摘要翻译：在复合基板10中，通过使用离子束的直接接合将压电基板12和支撑基板14接合。压电基板12的一个表面是负极化表面12a，压电基板12的另一个表面是正极化表面12b。用强酸蚀刻负极化表面12a的蚀刻速率可以高于用强酸蚀刻正极化表面12b的蚀刻速率。压电基板12的正极化面12b直接接合到支撑基板14上。压电基板12的负极化表面12a可以用强酸蚀刻。

6. 发明申请

US20150091416A1 Composite Substrate, Piezoelectric Device, and Method for Manufacturing Composite Substrate 有权
标题翻译：复合基板，压电元件及复合基板制造方法
公开(公告)号：US20150091416A1
公开(公告)日：2015-04-02
申请号：US14565902
申请日：2014-12-10
申请人： NGK INSULATORS, LTD.
发明人： Yuji Hori , Tomoyoshi Tai , Akira Hamajima , Toshinao Nakahara
IPC分类号： H01L41/08 , H01L41/22
CPC分类号： H01L41/0805 , H01L41/22 , H03H3/08 , H03H9/02574 , Y10T428/2495
摘要： A composite substrate 10 includes a piezoelectric substrate 12 and a support layer 14 bonded to the piezoelectric substrate 12. The support layer 14 is made of a material having no crystalline anisotropy in a bonded surface thereof and has a smaller thickness than the piezoelectric substrate 12. The piezoelectric substrate 12 and the support layer 14 are bonded together with an adhesive layer 16 therebetween. The composite substrate 10 has a total thickness of 180 μm or less. The base thickness ratio Tr=t2/(t1+t2) is 0.1 to 0.4, where t1 is the thickness of the piezoelectric substrate 12, and t2 is the thickness of the support layer 14. The thickness t1 is 100 μm or less. The thickness t2 is 50 μm or less.
摘要翻译：复合基板10包括压电基板12和与压电基板12接合的支撑层14.支撑层14由在其接合表面上不具有结晶各向异性的材料制成，并且具有比压电基板12更小的厚度。压电基板12和支撑层14之间粘合层16粘合在一起。复合基板10的总厚度为180μm以下。基底厚度比Tr = t2 /（t1 + t2）为0.1〜0.4，其中t1为压电基板12的厚度，t2为支撑层14的厚度。厚度t1为100μm以下。厚度t2为50μm以下。

7. 发明授权

US08981531B2 Composite wafer and method for manufacturing the same 有权
标题翻译：复合晶片及其制造方法
公开(公告)号：US08981531B2
公开(公告)日：2015-03-17
申请号：US14164915
申请日：2014-01-27
申请人： NGK Insulators, Ltd.
发明人： Yasunori Iwasaki , Akiyoshi Ide , Yuji Hori , Tomoyoshi Tai , Sugio Miyazawa
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L29/06 , H01L21/02002 , H01L21/2007 , H01L21/762 , H01L21/76251
摘要： A composite wafer 10 includes a supporting substrate 12 and a semiconductor substrate 14 which are bonded to each other by direct bonding. The supporting substrate 12 is a translucent alumina substrate with an alumina purity of 99% or more. The linear transmittance of the supporting substrate 12 at the visible light range is 40% or less. Furthermore, the total light transmittance from the front at a wavelength of 200 to 250 nm of the supporting substrate 12 is 60% or more. The average crystal grain size of the supporting substrate 12 is 10 to 35 μm. The semiconductor substrate 14 is a single crystal silicon substrate. Such a composite wafer 10 has insulation performance and thermal conduction comparable to those of a SOS wafer, can be manufactured at low cost, and can be easily made to have a large diameter.
摘要翻译：复合晶片10包括通过直接接合彼此接合的支撑基板12和半导体基板14。支撑基板12是氧化铝纯度为99％以上的半透明氧化铝基板。支撑基板12在可见光范围的线性透射率为40％以下。此外，从支撑基板12的200〜250nm的波长的前方的总透光率为60％以上。支撑基板12的平均结晶粒径为10〜35μm。半导体衬底14是单晶硅衬底。这种复合晶片10具有与SOS晶片相当的绝缘性能和热传导性，可以低成本地制造，并且可以容易地制成具有大直径。

8. 发明申请

US20140210317A1 Composite Substrate 有权
标题翻译：复合基材
公开(公告)号：US20140210317A1
公开(公告)日：2014-07-31
申请号：US14228452
申请日：2014-03-28
申请人： NGK CERAMIC DEVICE CO., LTD. , NGK INSULATORS, LTD.
发明人： Tomoyoshi Tai , Yasunori Iwasaki , Yuji Hori , Takahiro Yamadera , Ryosuke Hattori , Kengo Suzuki
IPC分类号： H01L41/083 , H01L41/053
CPC分类号： H01L41/0838 , H01L41/053 , H01L41/312 , H03H9/02574
摘要： A composite substrate according to the present invention includes a piezoelectric substrate that is a single-crystal lithium tantalate or lithium niobate substrate, a support substrate that is a single-crystal silicon substrate, and an amorphous layer joining together the piezoelectric substrate and the support substrate. The amorphous layer contains 3 to 14 atomic percent of argon. The amorphous layer includes, in order from the piezoelectric substrate toward the composite substrate, a first layer, a second layer, and a third layer. The first layer contains a larger amount of a constituent element (such as tantalum) of the piezoelectric substrate than the second and third layers. The third layer contains a larger amount of a constituent element (silicon) of the support substrate than the first and second layers. The second layer contains a larger amount of argon than the first and third layers.
摘要翻译：根据本发明的复合基板包括：单晶钽酸锂或铌酸锂基板的压电基板，作为单晶硅基板的支撑基板和将压电基板和支撑基板接合在一起的非晶层。无定形层含有3〜14原子％的氩。从压电基板向复合基板依次包括第一层，第二层和第三层。第一层包含比第二和第三层更大量的压电基片的构成元件（例如钽）。第三层包含比第一层和第二层更大量的支撑衬底的构成元素（硅）。第二层含有比第一和第三层更大量的氩。

9. 发明授权

US11239405B2 Method of producing a composite substrate 有权
公开(公告)号：US11239405B2
公开(公告)日：2022-02-01
申请号：US16148448
申请日：2018-10-01
申请人： NGK INSULATORS, LTD. , NGK CERAMIC DEVICE CO., LTD.
发明人： Tomoyoshi Tai , Yuji Hori , Takahiro Yamadera , Ryosuke Hattori , Kengo Suzuki
IPC分类号： H01L41/08 , H03H3/10 , H03H9/02 , H01L41/312 , H01L41/332 , H01L41/277 , H01L41/311 , H01L41/25 , H03H3/04
摘要： Described herein is a method of bonding a piezoelectric substrate to a support substrate to form a composite substrate. The piezoelectric substrate has one surface which is positively polarized, and a second surface which is negatively polarized. The method described herein includes the steps of bonding the positively polarized surface of the piezoelectric substrate to one surface of the support substrate by a direct bonding method.

10. 发明授权

US10964882B2 Bonding method 有权
公开(公告)号：US10964882B2
公开(公告)日：2021-03-30
申请号：US16135689
申请日：2018-09-19
申请人： NGK INSULATORS, LTD.
发明人： Tomoyoshi Tai , Yuji Hori , Keiichiro Asai , Takashi Yoshino , Masashi Goto , Masahiko Namerikawa
IPC分类号： H01L41/313 , H01L41/187 , H03H3/08 , H01L41/39 , H01L41/337 , H03H9/25 , H03H9/02 , H03H9/05 , H03H9/145 , H03H9/17 , H01L23/00 , C08J5/18 , H01L51/56 , C09J7/35
摘要： A bonding layer 3 is formed over a piezoelectric material substrate, and the bonding layer is made of one or more materials selected from the group consisting of silicon nitride, aluminum nitride, alumina, tantalum pentoxide, mullite, niobium pentoxide and titanium oxide. A neutralized beam is irradiated onto a surface of the bonding layer and a surface of a supporting body to activate the surface of the bonding layer and the surface of the supporting body. The surface of the bonding layer and the surface of the supporting body are bonded by direct bonding.

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