专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09460921B2 Nanowire article and processes for making and using same 有权
标题翻译：纳米线的制作和使用过程
公开(公告)号：US09460921B2
公开(公告)日：2016-10-04
申请号：US14679249
申请日：2015-04-06
申请人： NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY , Matthew D. Brubaker , William M. Old
发明人： Kristine A. Bertness , Matthew D. Brubaker , William M. Old
IPC分类号： B82Y35/00 , B82Y40/00 , H01L21/18 , C30B29/40 , H01L21/02
CPC分类号： H01L21/02603 , B82Y10/00 , B82Y35/00 , B82Y40/00 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02642 , H01L29/0665
摘要： A nanowire article includes a substrate; a plurality of nanowires disposed on the substrate, the nanowires comprising a semiconductor nitride, the semiconductor comprising an element selected from group 3 of the periodic table; and a superlattice layer interposed between the substrate and the plurality of gallium nitride nanowires. A process for producing a nanowire article includes disposing a superlattice layer on a substrate; disposing a first buffer layer on the superlattice layer; contacting the first buffer layer with a precursor; and forming a plurality of nanowires from the precursor on the first buffer layer to form the nanowire article, the nanowires comprising a semiconductor nitride, the semiconductor comprising an element selected from group 3 of the periodic table. A process for producing a nanowire article includes nitrogenating a substrate to form a nitrogenated layer on the substrate; contacting the nitrogenated layer with a precursor; and forming a plurality of gallium nitride nanowires from the precursor on the nitrogenated layer to form the nanowire article in an absence of a catalyst, wherein individual gallium nitride nanowires of the plurality of gallium nitride nanowires include a length axis that is substantially perpendicular to the nitrogenated layer.
摘要翻译：纳米线制品包括基材; 设置在所述衬底上的多个纳米线，所述纳米线包括半导体氮化物，所述半导体包括选自周期表第3组的元素; 以及插入在所述基板和所述多个氮化镓纳米线之间的超晶格层。制造纳米线制品的方法包括在基材上设置超晶格层; 在超晶格层上设置第一缓冲层; 使第一缓冲层与前体接触; 以及从所述第一缓冲层上的所述前体形成多个纳米线以形成所述纳米线制品，所述纳米线包含半导体氮化物，所述半导体包含选自周期表第3族的元素。一种纳米线制品的制造方法，包括使基材氮化以在基材上形成氮化层; 使氮化层与前体接触; 以及在不存在催化剂的情况下从所述氮化层上的所述前体形成多个氮化镓纳米线，以在不存在催化剂的情况下形成所述纳米线制品，其中所述多个氮化镓纳米线中的各个氮化镓纳米线包括基本上垂直于所述氮化物层。

2. 发明申请

US20150214050A1 NANOWIRE ARTICLE AND PROCESSES FOR MAKING AND USING SAME 有权
标题翻译：纳米制品和制造和使用它们的方法
公开(公告)号：US20150214050A1
公开(公告)日：2015-07-30
申请号：US14679249
申请日：2015-04-06
申请人： MATTHEW D. BRUBAKER , WILLIAM M. OLD , NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY
发明人： Kristine A. Bertness , Matthew D. Brubaker , William M. Old
IPC分类号： H01L21/02
CPC分类号： H01L21/02603 , B82Y10/00 , B82Y35/00 , B82Y40/00 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02642 , H01L29/0665
摘要： A nanowire article includes a substrate; a plurality of nanowires disposed on the substrate, the nanowires comprising a semiconductor nitride, the semiconductor comprising an element selected from group 3 of the periodic table; and a superlattice layer interposed between the substrate and the plurality of gallium nitride nanowires. A process for producing a nanowire article includes disposing a superlattice layer on a substrate; disposing a first buffer layer on the superlattice layer; contacting the first buffer layer with a precursor; and forming a plurality of nanowires from the precursor on the first buffer layer to form the nanowire article, the nanowires comprising a semiconductor nitride, the semiconductor comprising an element selected from group 3 of the periodic table. A process for producing a nanowire article includes nitrogenating a substrate to form a nitrogenated layer on the substrate; contacting the nitrogenated layer with a precursor; and forming a plurality of gallium nitride nanowires from the precursor on the nitrogenated layer to form the nanowire article in an absence of a catalyst, wherein individual gallium nitride nanowires of the plurality of gallium nitride nanowires include a length axis that is substantially perpendicular to the nitrogenated layer.
摘要翻译：纳米线制品包括基材; 设置在所述衬底上的多个纳米线，所述纳米线包括半导体氮化物，所述半导体包括选自周期表第3组的元素; 以及插入在所述基板和所述多个氮化镓纳米线之间的超晶格层。制造纳米线制品的方法包括在基材上设置超晶格层; 在超晶格层上设置第一缓冲层; 使第一缓冲层与前体接触; 以及从所述第一缓冲层上的所述前体形成多个纳米线以形成所述纳米线制品，所述纳米线包含半导体氮化物，所述半导体包含选自周期表第3族的元素。一种纳米线制品的制造方法，包括使基材氮化以在基材上形成氮化层; 使氮化层与前体接触; 以及在不存在催化剂的情况下从所述氮化层上的所述前体形成多个氮化镓纳米线，以在不存在催化剂的情况下形成所述纳米线制品，其中所述多个氮化镓纳米线中的各个氮化镓纳米线包括基本上垂直于所述氮化物层。

3. 发明授权

US07457708B2 Methods and devices for identifying related ions from chromatographic mass spectral datasets containing overlapping components 有权
标题翻译：用于从含有重叠组分的色谱质谱数据集中鉴定相关离子的方法和装置
公开(公告)号：US07457708B2
公开(公告)日：2008-11-25
申请号：US10603053
申请日：2003-06-24
申请人： Dean R. Thompson , William M. Old , David Lee Gines
发明人： Dean R. Thompson , William M. Old , David Lee Gines
IPC分类号： G06F19/00 , G01N24/00
CPC分类号： G01N33/6848 , G01N30/72 , G01N30/8631 , G06F19/703 , G06F19/707 , H01J49/0036 , Y10T436/24
摘要： Described are techniques for processing data sets produced by analyzing a sample. The input data set is represented as rows of intensities over time for a particular mass to charge (m/z) range. A correlation matrix is produced in which each row of the input data set is correlated with every other row in the input data set. The correlation matrix is clustered or grouped such that those highly correlated m/z ranges are included in the same group. A set of one or more scans is selected for each group representing periods of interest within each group. Using the m/z values included in each cluster, a resultant sample spectra is created for each of the selected scans. The processing techniques may be used to identify parent and related fragment ions in the input data set and as a preprocessor producing resultant sampled spectra used as input to subsequent processing.
摘要翻译：描述了用于处理通过分析样本产生的数据集的技术。输入数据集被表示为对于特定质量进行充电（m / z）范围随时间的强度行。产生相关矩阵，其中输入数据集的每一行与输入数据集中的每隔一行相关。相关矩阵被聚类或分组，使得那些高度相关的m / z范围被包括在同一组中。对于表示每个组内的感兴趣期间的每个组，选择一组或多个扫描。使用每个簇中包含的m / z值，为每个选定的扫描创建一个合成的样本谱。处理技术可用于识别输入数据集中的母体和相关片段离子，并且作为产生用作后续处理的输入的所得采样光谱的预处理器。

4. 发明授权

US07279679B2 Methods and systems for peak detection and quantitation 失效
标题翻译：用于峰检测和定量的方法和系统
公开(公告)号：US07279679B2
公开(公告)日：2007-10-09
申请号：US11145459
申请日：2005-06-02
申请人： William M. Old , Dean R. Thompson
发明人： William M. Old , Dean R. Thompson
IPC分类号： H01J49/44
CPC分类号： G01N33/6848 , G01N30/72 , G01N30/8631 , G06F19/703 , G06F19/707 , H01J49/0036 , Y10T436/24
摘要： Methods, systems and computer readable media for identifying peaks in a three-dimensional mass spectrometry/elution time dataset. The dataset is represented as a matrix of intensity values with column and row positions corresponding to specific elution time and m/z value, respectively. Peaks may be detected using a watershed image segmentation technique. Further provided are methods, systems and recordable media for creating a mask matrix to be overlaid on a large three-dimensional dataset represented as an image matrix, to identify a much smaller portion of the three dimensional dataset of interest, and to greatly reduce the amount of subsequent processing required for processing data of interest. The mask matrix has the same dimension as the image matrix and includes areas corresponding to one or more peaks identified by the watershed segmentation technique.
摘要翻译：用于识别三维质谱/洗脱时间数据集中的峰的方法，系统和计算机可读介质。数据集表示为强度值的矩阵，其列和行位置分别对应于特定的洗脱时间和m / z值。可以使用分水岭图像分割技术来检测峰。还提供了用于创建掩模矩阵以覆盖在表示为图像矩阵的大型三维数据集上的方法，系统和可记录介质，以识别感兴趣的三维数据集的更小部分，并且大大减少处理感兴趣的数据所需的后续处理。掩模矩阵具有与图像矩阵相同的维度，并且包括对应于由分水岭分割技术识别的一个或多个峰值的区域。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式