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1. 发明申请

US20080185569A1 PHASE CHANGE RANDOM ACCESS MEMORIES INCLUDING A WORD LINE FORMED OF A METAL MATERIAL AND METHODS OF FORMING THE SAME 审中-公开
标题翻译：相位变化随机访问记忆，包括形成金属材料的字线及其形成方法
公开(公告)号：US20080185569A1
公开(公告)日：2008-08-07
申请号：US12023474
申请日：2008-01-31
申请人： Myung-jin Park , Young-tae Kim , Keun-ho Lee
发明人： Myung-jin Park , Young-tae Kim , Keun-ho Lee
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： H01L45/144 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/126
摘要： A phase change memory includes a word line disposed on a semiconductor substrate and a cell diode that physically contacts the semiconductor substrate and a corresponding word line. The word line may be formed of a metal, such as tungsten. Accordingly, no metal contact is included and the word line formed of metal is in contact with the cell diode.
摘要翻译：相变存储器包括设置在半导体衬底上的字线和物理接触半导体衬底的单元二极管和相应的字线。字线可以由诸如钨的金属形成。因此，不包括金属接触，并且由金属形成的字线与电池二极管接触。

2. 发明授权

US07042001B2 Phase change memory devices including memory elements having variable cross-sectional areas 失效
标题翻译：相变存储器件包括具有可变横截面积的存储元件
公开(公告)号：US07042001B2
公开(公告)日：2006-05-09
申请号：US11017594
申请日：2004-12-20
申请人： Young-tae Kim , Young-nam Hwang , Tai-kyung Kim , Won-young Chung , Keun-ho Lee
发明人： Young-tae Kim , Young-nam Hwang , Tai-kyung Kim , Won-young Chung , Keun-ho Lee
IPC分类号： H01L47/00 , H01L29/04
CPC分类号： H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/144
摘要： A phase-change memory device may include first and second spaced apart conductive electrodes, and a phase-change memory element coupled between the first and second conductive electrodes. More particularly, a first portion of the phase-change memory element may have a first cross-sectional area along a current path between the first and second conductive electrodes, and a second portion of the phase-change memory element may have a second cross-sectional area along the current path between the first and second conductive electrodes. Moreover, the first and second cross-sectional areas may be different.
摘要翻译：相变存储器件可以包括第一和第二间隔开的导电电极，以及耦合在第一和第二导电电极之间的相变存储元件。更具体地，相变存储元件的第一部分可以具有沿着第一和第二导电电极之间的电流路径的第一横截面积，并且相变存储元件的第二部分可以具有第二横截面积，沿着第一和第二导电电极之间的电流路径的截面积。此外，第一和第二横截面积可以不同。

3. 发明申请

US20050167645A1 Phase change memory devices including memory elements having variable cross-sectional areas 失效
标题翻译：相变存储器件包括具有可变横截面积的存储元件
公开(公告)号：US20050167645A1
公开(公告)日：2005-08-04
申请号：US11017594
申请日：2004-12-20
申请人： Young-tae Kim , Young-nam Hwang , Tai-kyung Kim , Won-young Chung , Keun-ho Lee
发明人： Young-tae Kim , Young-nam Hwang , Tai-kyung Kim , Won-young Chung , Keun-ho Lee
IPC分类号： H01L27/108 , H01L29/02 , H01L45/00
CPC分类号： H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/144
摘要： A phase-change memory device may include first and second spaced apart conductive electrodes, and a phase-change memory element coupled between the first and second conductive electrodes. More particularly, a first portion of the phase-change memory element may have a first cross-sectional area along a current path between the first and second conductive electrodes, and a second portion of the phase-change memory element may have a second cross-sectional area along the current path between the first and second conductive electrodes. Moreover, the first and second cross-sectional areas may be different.
摘要翻译：相变存储器件可以包括第一和第二间隔开的导电电极，以及耦合在第一和第二导电电极之间的相变存储元件。更具体地，相变存储元件的第一部分可以具有沿着第一和第二导电电极之间的电流路径的第一横截面积，并且相变存储元件的第二部分可以具有第二横截面积，沿着第一和第二导电电极之间的电流路径的截面积。此外，第一和第二横截面积可以不同。

4. 发明授权

US06472886B2 Method of calculating parasitic capacitance between electrodes of integrated circuits 失效
标题翻译：计算集成电路电极之间寄生电容的方法
公开(公告)号：US06472886B2
公开(公告)日：2002-10-29
申请号：US09814376
申请日：2001-03-21
申请人： Keun-ho Lee
发明人： Keun-ho Lee
IPC分类号： G01R2726
CPC分类号： G01R27/2605
摘要： A method of calculating capacitance between conductive patterns of an integrated circuit (IC) by defining a mesh of nodes in a space between at least two electrodes, calculating the electric potential at each node, and then calculating the parasitic capacitance between the electrodes.
摘要翻译：通过在至少两个电极之间的空间中定义节点的网格，计算每个节点处的电位，然后计算电极之间的寄生电容，来计算集成电路（IC）的导电图案之间的电容的方法。

5. 发明授权

US06862214B2 Phase change memory array 有权
标题翻译：相变存储器阵列
公开(公告)号：US06862214B2
公开(公告)日：2005-03-01
申请号：US10786303
申请日：2004-02-26
申请人： Keun-ho Lee , Chang-sub Lee
发明人： Keun-ho Lee , Chang-sub Lee
IPC分类号： G11C11/40 , G11C11/00 , G11C16/02 , H01L27/24
CPC分类号： G11C13/0004 , G11C13/003 , G11C2213/76 , G11C2213/79 , H01L27/2436 , H01L27/2463 , H01L45/06
摘要： A phase change memory includes a plurality of word lines, a plurality of bits lines intersecting the word lines, and a plurality of memory cells arranged in rows along the word lines and located at corresponding intersection regions of the word lines and bit lines. Each of the memory cells includes a cell transistor having a gate connected to a corresponding word line, and a resistor and a phase change cell connected in series between a drain of the cell transistor and a corresponding bit line. In order to increase a cell drive current, the phase change memory also includes a plurality of auxiliary transistors respectively connected between the drains of the cell transistors of adjacent said memory cells.
摘要翻译：相变存储器包括多个字线，与字线相交的多个位线，以及沿着字线布置成行并位于字线和位线的对应交叉区域的多个存储单元。每个存储单元包括具有连接到对应字线的栅极的单元晶体管，以及串联连接在单元晶体管的漏极和相应位线之间的电阻器和相变单元。为了增加单元驱动电流，相变存储器还包括分别连接在相邻的所述存储单元的单元晶体管的漏极之间的多个辅助晶体管。

6. 发明授权

US06816999B2 Method of extracting interconnection capacitance of semiconductor integrated chip and recording medium for recording the same 有权
标题翻译：提取半导体集成芯片的互连电容和记录介质的方法
公开(公告)号：US06816999B2
公开(公告)日：2004-11-09
申请号：US10266604
申请日：2002-10-09
申请人： Keun-ho Lee
发明人： Keun-ho Lee
IPC分类号： G06F1750
CPC分类号： H01L21/76819 , G06F17/5036 , H01L21/76838 , H01L23/5222 , H01L2924/0002 , H01L2924/00
摘要： A method of extracting the interconnection capacitance of a semiconductor integrated circuit is provided. An interconnection structure composed of a plurality of signal lines and dummy conductive patterns disposed between the signal lines is made into data. Data on interconnection structure primitives, which are made by changing portions of the dummy patterns into high-k dielectric materials is generated based on the interconnection structure data. Capacitance of the interconnection structure is then extracted by inputting data on the interconnection structure primitives to an RC extractor and operating the data. According to this method, extracting interconnection capacitance is easily applied to various types of RC extractors. Moreover, the time required to extract the interconnection capacitance is reduced.
摘要翻译：提供一种提取半导体集成电路的互连电容的方法。将由多个信号线构成的互连结构和设置在信号线之间的虚设导电图案形成数据。基于互连结构数据生成通过将虚拟图案的部分改变为高k电介质材料而制成的互连结构图元上的数据。然后通过将互连结构图元上的数据输入到RC提取器并操作数据来提取互连结构的电容。根据该方法，提取互连电容容易地应用于各种类型的RC提取器。此外，提取互连电容所需的时间减少。

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