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1. 发明授权

US5912532A White-light emitting electroluminescent display and fabricating method thereof 失效
标题翻译：白光发光电致发光显示器及其制造方法
公开(公告)号：US5912532A
公开(公告)日：1999-06-15
申请号：US764030
申请日：1996-12-12
申请人： Myung Hwan Oh , Taek Sang Hahn , Yun Hi Lee , Tae Ho Yeom , Dong Ho Kim , Dong Ky Shin , Chun Woo Lee , Seong Jae Jeung
发明人： Myung Hwan Oh , Taek Sang Hahn , Yun Hi Lee , Tae Ho Yeom , Dong Ho Kim , Dong Ky Shin , Chun Woo Lee , Seong Jae Jeung
IPC分类号： H05B33/14 , C09K11/77 , H05B33/12 , H05B33/22 , H05B33/00
CPC分类号： C09K11/7705 , H05B33/12 , H05B33/14 , H05B33/22 , Y02B20/181
摘要： An improved white-lite emitting electroluminescent display capable of emitting a light having a red, blue, and green wave length in a single material and having a buffer layer of Si.sub.x N.sub.y between a dielectric layer of BaTa.sub.2 O.sub.6 and a light-emitting layer, which includes a substrate; a lower dielectric layer of Bata.sub.2 O.sub.6 formed on a transparent electrode; a light-emitting layer of SrS:Pr,F formed on the lower dielectric layer; a buffer layer of Si.sub.x N.sub.y formed on the light-emitting layer; a upper dielectric layer of BaTa.sub.2 O.sub.6 formed on the buffer layer; and an upper electrode formed on the upper dielectric layer, and further includes the steps of a first step which forms a lower electrode on a substrate; a second step which forms a light-emitting layer of SrS:Pr.F on a lower dielectric layer; a third step which forms a buffer layer of Si.sub.x N.sub.y on the light-emitting layer; a fourth step which forms a upper dielectric layer of BaTa.sub.2 O.sub.6 on the buffer layer; and a fifth step which deposits an aluminum electrode on the upper dielectric layer.
摘要翻译：一种改进的白色发光电致发光显示器，其能够在单一材料中发射具有红色，蓝色和绿色波长的光，并且在BaTa 2 O 6的介电层和发光层之间具有SixNy的缓冲层，其包括基质; 形成在透明电极上的Bata2O6的下介电层; 形成在下介电层上的SrS：Pr，F的发光层; 形成在发光层上的SixNy缓冲层; 形成在缓冲层上的BaTa2O6的上电介质层; 以及形成在所述上电介质层上的上电极，还包括在基板上形成下电极的第一步骤的步骤; 在下电介质层上形成SrS:PrF的发光层的第二步骤; 在发光层上形成SixNy缓冲层的第三步骤; 第四步，在缓冲层上形成BaTa2O6的上电介质层; 以及在上电介质层上沉积铝电极的第五步骤。

2. 发明授权

US5955835A White-light emitting electroluminescent display device and manufacturing method thereof 失效
标题翻译：白光发光电致发光显示装置及其制造方法
公开(公告)号：US5955835A
公开(公告)日：1999-09-21
申请号：US764792
申请日：1996-12-12
申请人： Myung Hwan Oh , Task Sang Hahn , Yun Hi Lee , Seong Jae Jeung , Young Dae Ju , Jin Ho Sunwoo
发明人： Myung Hwan Oh , Task Sang Hahn , Yun Hi Lee , Seong Jae Jeung , Young Dae Ju , Jin Ho Sunwoo
IPC分类号： H05B33/14 , C09K11/77 , H05B33/22
CPC分类号： C09K11/7702 , H05B33/14 , H05B33/22 , Y02B20/181
摘要： An improved white-light emitting electroluminescent display device and a manufacturing method thereof capable of advantageously generating a light having a red, blue, and green wave lengths within a unique material, which includes a substrate; a lower electrode disposed on the substrate; a first dielectric layer disposed on the lower electrode; a ZnS:Pr,Mn light-emitting layer disposed on the first dielectric layer; a second dielectric layer; and an upper electrode disposed on the second dielectric layer. In addition, a fabrication method thereof includes the steps of forming a first dielectric layer on an upper electrode; forming a light-emitting layer on the first dielectric layer by depositing a ZnS:Pr,Mn luminescent material made of Pr of 1.4.about.0.5 mol % and Mn of 0.1.about.0.01 mol % on a ZnS host material; forming a second dielectric layer on the light-emitting layer; and forming a lower electrode on the second dielectric layer.
摘要翻译：一种改进的白光发光电致发光显示装置及其制造方法，其能够有利地在包含基板的独特材料内产生具有红色，蓝色和绿色波长的光; 设置在所述基板上的下电极; 设置在下电极上的第一电介质层; 设置在所述第一电介质层上的ZnS：Pr，Mn发光层; 第二电介质层; 以及设置在所述第二电介质层上的上电极。此外，其制造方法包括以下步骤：在上电极上形成第一电介质层; 通过在ZnS主体材料上沉积由1.4DIFFERENCE 0.5mol％的Pr和0.1％0.01mol％的Mn制成的ZnS：Pr，Mn发光材料，在第一介电层上形成发光层; 在所述发光层上形成第二电介质层; 以及在所述第二电介质层上形成下电极。

3. 发明授权

US5814528A Fabrication method of semiconductor test piece 失效
标题翻译：半导体测试片的制作方法
公开(公告)号：US5814528A
公开(公告)日：1998-09-29
申请号：US729064
申请日：1996-10-10
申请人： Byeong Kwon Ju , Myung Hwan Oh , Yun Hi Lee , Nam Yang Lee , Keun Ha Koh , Dong Ky Shin
发明人： Byeong Kwon Ju , Myung Hwan Oh , Yun Hi Lee , Nam Yang Lee , Keun Ha Koh , Dong Ky Shin
IPC分类号： H01L21/66 , H01L21/02 , H01L21/304
CPC分类号： H01L22/24 , H01L22/12
摘要： A fabrication method for a test piece for observing non-contact regions in a pair of bonded semiconductor substrates includes thinning one substrate of a pair of bonded semiconductor substrates, grade-polishing the thinned semiconductor substrate and the bonded semiconductor substrates to have a predetermined graded angle relative their bonded surfaces, and dry-etching an area around the bonded surfaces of the grade-polished semiconductor substrates to reveal faults. With the thusly fabricated test piece, micro non-contact regions can be simply observed and crystal faults existing on the bonded surfaces as well as in the micro non-contact regions can be easily detected.
摘要翻译：用于观察一对键合半导体衬底中的非接触区域的测试件的制造方法包括：使一对键合半导体衬底的一个衬底变薄，对该薄化的半导体衬底和接合的半导体衬底进行等级抛光以具有预定的渐变角相对它们的粘合表面，并且干蚀刻在抛光后的半导体衬底的接合表面周围的区域以显示故障。利用如此制造的试片，可以简单地观察微非接触区域，并且可以容易地检测存在于接合表面以及微非接触区域中的晶体缺陷。

4. 发明授权

US6121066A Method for fabricating a field emission display 失效
标题翻译：制造场致发射显示器的方法
公开(公告)号：US6121066A
公开(公告)日：2000-09-19
申请号：US648844
申请日：1996-05-15
申请人： Byeong Kwon Ju , Myung Hwan Oh , Yun Hi Lee
发明人： Byeong Kwon Ju , Myung Hwan Oh , Yun Hi Lee
IPC分类号： H01J9/02 , H01L21/00
CPC分类号： H01J9/025
摘要： A field emission display and a method for fabricating the same are disclosed. The method includes the steps of: forming a silicon mold; growing a diamond on the silicon mold, to form a diamond tip; forming a conductive layer on the diamond tip; bonding a first substrate to the conductive layer; removing the silicon mold; forming a gate insulating layer and gate electrode on the diamond tip; and etching the gate electrode and gate insulating layer to expose an electron emission portion of the tip, and thereby form a gate hole. By doing so, the operation voltage is reduced, compared with the diode-type display, and high-responsibility field emission display can be realized by applying (-) or (+) voltage to the gate electrode.
摘要翻译：公开了一种场致发射显示器及其制造方法。该方法包括以下步骤：形成硅模具; 在硅模上生长金刚石，形成金刚石尖端; 在金刚石尖端上形成导电层; 将第一衬底接合到所述导电层; 去除硅模具; 在金刚石尖端上形成栅极绝缘层和栅电极; 并且蚀刻栅电极和栅极绝缘层以暴露尖端的电子发射部分，从而形成栅极孔。通过这样做，与二极管型显示器相比，操作电压降低，并且可以通过向栅电极施加（ - ）或（+）电压来实现高责任场发射显示。

5. 发明授权

US5966588A Field emission display device fabrication method 失效
标题翻译：场发射显示装置的制造方法
公开(公告)号：US5966588A
公开(公告)日：1999-10-12
申请号：US627533
申请日：1996-04-04
申请人： Byeong Kwon Ju , Myung Hwan Oh , Yun Hi Lee , Nam Yang Lee
发明人： Byeong Kwon Ju , Myung Hwan Oh , Yun Hi Lee , Nam Yang Lee
IPC分类号： H01J17/04 , H01J9/02 , H01L21/00 , H01J1/16 , H01J9/04 , H01L21/4763
CPC分类号： H01J9/025 , Y10S438/978
摘要： An improved field emission display device fabrication method which adopts both a silicon wafer direct bonding method and a mold method so as to fabricate an improved field emission display device, which includes the steps of a first step which forms a tip array by a molding method; and a second step which bonds the tip array to a second semiconductor substrate.
摘要翻译：一种改进的场致发射显示器件制造方法，其采用硅晶片直接接合方法和模具方法，以制造改进的场致发射显示器件，其包括通过模制方法形成尖端阵列的第一步骤的步骤; 以及将尖端阵列结合到第二半导体衬底的第二步骤。

6. 发明授权

US5977703A Field emission display device 失效
标题翻译：场致发射显示装置
公开(公告)号：US5977703A
公开(公告)日：1999-11-02
申请号：US648845
申请日：1996-05-15
申请人： Byeong Kwon Ju , Myung Hwan Oh , Yun Hi Lee
发明人： Byeong Kwon Ju , Myung Hwan Oh , Yun Hi Lee
IPC分类号： H01J1/304 , H01J29/04
CPC分类号： H01J1/3042 , H01J2329/00
摘要： A field emission display device and a fabrication method thereof, by which a vacuum sealing can be simple, and electric and optical characteristics between pixels can be improved by achieving a device package by means of a junction between substrates in vacuum without a spacer, which includes a semiconductor substrate having a groove having a predetermined depth; an n-well formed on the semiconductor substrate under the bottom of the groove; an emitter formed on the n-well; an insulation film formed on a portion of the semiconductor substrate, in which the groove is not formed; a transparent electrode bonded to the upper portion of the insulation film; a light emitting layer arranged on the upper portion of the emitter and formed within the transparent electrode; and a glass substrate formed on the transparent electrode.
摘要翻译：一种场致发射显示装置及其制造方法，其中真空密封可以简单，并且可以通过在没有间隔件的真空中通过基板之间的接合实现器件封装来提高像素之间的电和光学特性，其包括半导体衬底，具有具有预定深度的凹槽; 在沟槽底部的半导体衬底上形成的n阱; 在n阱上形成的发射极; 形成在半导体衬底的不形成沟槽的部分上的绝缘膜; 连接到绝缘膜的上部的透明电极; 发光层，配置在发光体的上部并形成在透明电极内; 以及形成在透明电极上的玻璃基板。

7. 发明授权

US5853795A Luminant for field emission display fabricated through physical vapor deposition and method for fabricating the same 失效
标题翻译：用于通过物理气相沉积制造的场致发射显示器的发光体及其制造方法
公开(公告)号：US5853795A
公开(公告)日：1998-12-29
申请号：US647525
申请日：1996-05-15
申请人： Myung Hwan Oh , Yun Hi Lee , Byeong Kwon Ju , Man Ho Song
发明人： Myung Hwan Oh , Yun Hi Lee , Byeong Kwon Ju , Man Ho Song
IPC分类号： H01J17/49 , C23C14/06 , B05D5/06 , C23C14/00
CPC分类号： C23C14/0688
摘要： A method for fabricating a luminant for a field emission display fabricated through PVD is disclosed. The method includes the steps of: forming a ZnO:Zn luminescent thin film on a glass substrate through PVD; and forming a conductive thin film on the ZnO:Zn luminescent thin film, to thereby change the luminescence threshold, brightness and luminescent color suitable for the operation characteristics of the emitter in a predetermined range, by controlling the thickness of the luminescent layer, temperature and ambient of heat treatment of the luminant.
摘要翻译：公开了一种通过PVD制造用于场致发射显示器的发光体的方法。该方法包括以下步骤：通过PVD在玻璃基板上形成ZnO：Zn发光薄膜; 在ZnO:Zn发光薄膜上形成导电薄膜，通过控制发光层的厚度，温度和温度等，将适合发射体的工作特性的发光阈值，亮度和发光颜色改变为规定范围发光体的热处理环境。

8. 发明申请

US20090151371A1 POWER SAVING TYPE COMPRESSOR AND REFRIGERATOR WITH THE SAME AND METHOD FOR CONTROLLING THE SAME 审中-公开
标题翻译：节能型压缩机及其制冷机及其控制方法
公开(公告)号：US20090151371A1
公开(公告)日：2009-06-18
申请号：US12089137
申请日：2006-09-06
申请人： Sang Joon Eum , Yun Hi Lee , Yeon Woo Kim , Seoung Min Kang , Jea Young Choi , Jeong Ho Lee , Bum Dong Sa , Chang Gyu Kim , Jae Hun Lee
发明人： Sang Joon Eum , Yun Hi Lee , Yeon Woo Kim , Seoung Min Kang , Jea Young Choi , Jeong Ho Lee , Bum Dong Sa , Chang Gyu Kim , Jae Hun Lee
IPC分类号： F25B49/00 , H02P1/42
CPC分类号： H02P1/445 , F04B49/06 , H02P25/04 , H02P25/18
摘要： The present invention relates to a compressor (5) and a refrigerator with the same, and more particularly, to a power saving type compressor which can prevent unnecessary consumption of a current for the compressor to have high energy efficiency, and a refrigerator with the same and a method for controlling the same, wherein the power saving type compressor includes a main winding and a sub-winding respectively having a main terminal (R) and a sub-terminal(s) main winding and a sub-winding being connected with a common terminal to each other, and a PTC switching unit between a PTC unit connected to the sub-terminal for increasing a starting torque in operation of the compressor and the main terminal, for making selective switching on/off of a power input to the PTC unit.
摘要翻译：压缩机及其制冷机技术领域本发明涉及一种压缩机（5）及其制冷机，更具体地说，涉及能够防止不必要地消耗压缩机的电流而具有高能量效率的节能型压缩机，以及具有该压缩机的冰箱及其控制方法，其中所述省电型压缩机包括分别具有主端子（R）和副端子主绕组的主绕组和次级绕组，以及与副端子公共端子，以及连接到副端子的PTC单元之间的PTC切换单元，用于增加在压缩机和主端子的运行中的起动转矩，用于选择性地切换到输入到PTC的功率的接通/断开单元。

9. 发明授权

US06833558B2 Parallel and selective growth method of carbon nanotube on the substrates for electronic-spintronic device applications 失效
标题翻译：用于电子自旋电子器件应用的基板上的碳纳米管的平行和选择性生长方法
公开(公告)号：US06833558B2
公开(公告)日：2004-12-21
申请号：US09933833
申请日：2001-08-22
申请人： Yun Hi Lee , Byeong Kwon Ju , Yoon Taek Jang
发明人： Yun Hi Lee , Byeong Kwon Ju , Yoon Taek Jang
IPC分类号： D01F912
CPC分类号： H01L51/0595 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/08 , C23C16/04 , C23C16/26 , C30B25/00 , C30B25/02 , C30B29/605 , D01F9/12 , H01L51/0048 , H01L51/0504 , Y10S977/842
摘要： A selective and parallel growth method of carbon nanotube for electronic-spintronic device applications which directly grows a carbon nanotube on a wanted position toward a horizontal direction comprises the steps of: forming an insulating film on a board; forming fine patterns of catalyst metal layer including a contact electrode pad on the insulating film, forming a growth barrier layer for preventing vertical growth on upper part of the catalyst metal layer; and directly growing the carbon nanotube between the catalyst patterns.
摘要翻译：用于电子自旋电子器件应用的碳纳米管的选择性和平行生长方法，其直接在期望位置朝向水平方向生长碳纳米管，包括以下步骤：在板上形成绝缘膜; 在绝缘膜上形成包括接触电极焊盘的催化剂金属层的精细图案，形成用于防止催化剂金属层上部垂直生长的生长阻挡层; 并在催化剂图案之间直接生长碳纳米管。

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