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1. 发明申请

US20100009539A1 CERIUM OXIDE POWDER, METHOD FOR PREPARING THE SAME, AND CMP SLURRY COMPRISING THE SAME 有权
标题翻译：氧化铝粉末，其制备方法和包括其的CMP浆料
公开(公告)号：US20100009539A1
公开(公告)日：2010-01-14
申请号：US12309694
申请日：2007-07-26
申请人： Myoung Hwan Oh , Seung Beom Cho , Jun Seok Nho , Jong Pil Kim , Jang Yul Kim
发明人： Myoung Hwan Oh , Seung Beom Cho , Jun Seok Nho , Jong Pil Kim , Jang Yul Kim
IPC分类号： H01L21/465 , C09K13/00 , C01F17/00
CPC分类号： H01L21/31053 , B24B37/044 , B82Y30/00 , C01F17/0043 , C01P2002/72 , C01P2002/76 , C01P2004/03 , C01P2004/22 , C01P2004/51 , C01P2004/62 , C01P2004/64 , C09G1/02 , C09K3/1463 , H01L21/76229
摘要： Disclosed is cerium oxide powder for a CMP abrasive, which can improve polishing selectivity of a silicon oxide layer to a silicon nitride layer and/or within-wafer non-uniformity (WIWNU) during chemical mechanical polishing in a semiconductor fabricating process. More particularly, the cerium oxide powder is obtained by using cerium carbonate having a hexagonal crystal structure as a precursor. Also, CMP slurry comprising the cerium oxide powder as an abrasive, and a shallow trench isolation method for a semiconductor device using the CMP slurry as polishing slurry are disclosed.
摘要翻译：公开了用于CMP研磨剂的氧化铈粉末，其可以在半导体制造工艺中的化学机械抛光期间改善氧化硅层对氮化硅层的抛光选择性和/或晶片内不均匀性（WIWNU）。更具体地说，通过使用具有六方晶系结构的碳酸铈作为前体来获得二氧化铈粉末。此外，公开了包含作为研磨剂的氧化铈粉末的CMP浆料和使用CMP浆料作为研磨浆料的半导体器件的浅沟槽隔离方法。

2. 发明授权

US08361419B2 Cerium carbonate powder, method for preparing the same, cerium oxide powder made therefrom, method for preparing the same, and CMP slurry comprising the same 有权
标题翻译：碳酸铈粉末，其制备方法，由其制成的氧化铈粉末，其制备方法以及包含其的CMP浆料
公开(公告)号：US08361419B2
公开(公告)日：2013-01-29
申请号：US12591227
申请日：2009-11-12
申请人： Myoung Hwan Oh , Jun Seok Nho , Jong Pil Kim , Jang Yul Kim , Seung Beom Cho
发明人： Myoung Hwan Oh , Jun Seok Nho , Jong Pil Kim , Jang Yul Kim , Seung Beom Cho
IPC分类号： C01F17/00
CPC分类号： C01F17/0043 , C01F17/005 , C01P2002/72 , C01P2004/03 , C01P2004/61 , C01P2004/62 , C01P2006/80
摘要： Disclosed is a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a carbonate precursor solution to cause precipitation, wherein at least one solvent used in the cerium precursor solution and the carbonate precursor solution is an organic solvent. Cerium carbonate powder obtained from the method, cerium oxide powder obtained from the cerium carbonate powder, a method for preparing the cerium oxide powder, and CMP slurry comprising the cerium oxide powder are also disclosed. The method for preparing cerium carbonate using an organic solvent, allows the resultant cerium carbonate powder to have a size and shape controllable from the initial nucleation step. Additionally, it is possible to easily control the size and shape of cerium oxide powder obtained from the cerium carbonate powder.
摘要翻译：公开了一种通过将铈前体溶液与碳酸酯前体溶液混合以制备沉淀来制备碳酸铈粉末的方法，其中用于铈前体溶液和碳酸酯前体溶液中的至少一种溶剂是有机溶剂。还公开了从该方法得到的碳酸铈粉末，由碳酸铈粉末得到的氧化铈粉末，氧化铈粉末的制备方法和含有氧化铈粉末的CMP浆料。使用有机溶剂制备碳酸铈的方法允许所得的碳酸铈粉末具有从初始成核步骤可控的尺寸和形状。此外，可以容易地控制由碳酸铈粉末获得的氧化铈粉末的尺寸和形状。

3. 发明授权

US07736530B2 CMP slurry and method for polishing semiconductor wafer using the same 有权
标题翻译： CMP浆料和使用其的抛光半导体晶片的方法
公开(公告)号：US07736530B2
公开(公告)日：2010-06-15
申请号：US11657051
申请日：2007-01-24
申请人： Seung Beom Cho , Jong Pil Kim , Jun Seok Nho , Myoung Hwan Oh , Jang Yul Kim
发明人： Seung Beom Cho , Jong Pil Kim , Jun Seok Nho , Myoung Hwan Oh , Jang Yul Kim
IPC分类号： C09K13/04
CPC分类号： C09G1/02 , H01L21/3212
摘要： Disclosed is a CMP slurry in which a compound having a weight-average molecular weight of 30-500 and containing a hydroxyl group (OH), a carboxyl group (COOH), or both, is added to a CMP slurry comprising abrasive particles and water and having a first viscosity, so that the CMP slurry is controlled to have a second viscosity 5-30% lower than the first viscosity. Also disclosed is a method for polishing a semiconductor wafer using the CMP slurry. According to the disclosed invention, the agglomerated particle size of abrasive particles in the CMP slurry can be reduced, while the viscosity of the CMP slurry can be reduced and the global planarity of wafers upon polishing can be improved. Thus, the CMP slurry can be advantageously used in processes for manufacturing semiconductor devices requiring fine patterns and can improve the reliability and production of semiconductor devices through the use thereof in semiconductor processes.
摘要翻译：公开了一种CMP浆料，其中将包含重均分子量为30-500并含有羟基（OH），羧基（COOH）或二者）的化合物加入到包含磨料颗粒和水的CMP浆料中并且具有第一粘度，使得CMP浆料被控制为具有比第一粘度低5-30％的第二粘度。还公开了使用CMP浆料来研磨半导体晶片的方法。根据所公开的发明，可以减少CMP浆料中的磨料颗粒的聚集粒度，同时可以减少CMP浆料的粘度，并且可以提高抛光时晶片的全局平面性。因此，CMP浆料可以有利地用于制造需要精细图案的半导体器件的工艺中，并且可以通过其在半导体工艺中的使用来提高半导体器件的可靠性和生产。

4. 发明授权

US07524475B2 Cerium oxide powder for one-component CMP slurry, preparation method thereof, one-component CMP slurry composition comprising the same, and method of shallow trench isolation using the slurry 有权
标题翻译：用于单组分CMP浆料的氧化铈粉末，其制备方法，包含其的单组分CMP浆料组合物以及使用该浆料的浅沟槽隔离方法
公开(公告)号：US07524475B2
公开(公告)日：2009-04-28
申请号：US11514309
申请日：2006-09-01
申请人： Seung Beom Cho , Jun Seok Nho , Dong Mok Shin , Jong Pil Kim , Myoung Hwan Oh , Jang Yul Kim , Eun Mi Choi , Min Jin Ko
发明人： Seung Beom Cho , Jun Seok Nho , Dong Mok Shin , Jong Pil Kim , Myoung Hwan Oh , Jang Yul Kim , Eun Mi Choi , Min Jin Ko
IPC分类号： B01J23/10 , B22F9/00 , B24B1/00 , C01F17/00 , C09G1/02
CPC分类号： C09K3/1463 , B82Y30/00 , C01F17/0043 , C01P2002/60 , C01P2002/72 , C01P2004/03 , C01P2004/62 , C01P2004/64 , C01P2006/12 , C01P2006/17
摘要： A cerium oxide powder for one-component CMP slurry, which has a specific surface area of 5 m2/g or more, and a ratio of volume fraction of pores with a diameter of 3 nm or more to that of pores with a diameter less than 3 nm of 8:2˜2:8, is disclosed. A method for preparing the same, a one-component CMP slurry comprising the same as an abrasive material, and a method of shallow trench isolation using the one-component CMP slurry are also disclosed. The CMP slurry causes no precipitation of the cerium oxide powder even if it is provided as a one-component CMP slurry, because the CMP slurry uses, as an abrasive material, cerium oxide powder that is obtained via a low-temperature calcination step, optionally a pulverization step, and a high-temperature calcination step and has a high pore fraction and low strength.
摘要翻译：具有比表面积为5m 2 / g以上的单组分CMP浆料的氧化铈粉末，直径为3nm以上的孔的体积分率与直径小于 3nm为8：2〜2：8。还公开了一种其制备方法，包含其作为研磨材料的单组分CMP浆料，以及使用单组分CMP浆料的浅沟槽隔离方法。由于CMP浆料使用通过低温煅烧步骤得到的氧化铈粉末，因此CMP浆料不会由于作为单组分CMP浆料而被提供，因此不会沉淀氧化铈粉末粉碎步骤和高温煅烧步骤，并且具有高孔隙率和低强度。

5. 发明授权

US08372303B2 Cerium oxide powder, method for preparing the same, and CMP slurry comprising the same 有权
公开(公告)号：US08372303B2
公开(公告)日：2013-02-12
申请号：US12309694
申请日：2007-07-26
申请人： Myoung Hwan Oh , Seung Beom Cho , Jun Seok Nho , Jong Pil Kim , Jang Yul Kim
发明人： Myoung Hwan Oh , Seung Beom Cho , Jun Seok Nho , Jong Pil Kim , Jang Yul Kim
IPC分类号： C09K13/00 , C03C15/00
CPC分类号： H01L21/31053 , B24B37/044 , B82Y30/00 , C01F17/0043 , C01P2002/72 , C01P2002/76 , C01P2004/03 , C01P2004/22 , C01P2004/51 , C01P2004/62 , C01P2004/64 , C09G1/02 , C09K3/1463 , H01L21/76229
摘要： Disclosed is cerium oxide powder for a CMP abrasive, which can improve polishing selectivity of a silicon oxide layer to a silicon nitride layer and/or within-wafer non-uniformity (WIWNU) during chemical mechanical polishing in a semiconductor fabricating process. More particularly, the cerium oxide powder is obtained by using cerium carbonate having a hexagonal crystal structure as a precursor. Also, CMP slurry comprising the cerium oxide powder as an abrasive, and a shallow trench isolation method for a semiconductor device using the CMP slurry as polishing slurry are disclosed.

6. 发明申请

US20100133466A1 Cerium carbonate powder, method for preparing the same, cerium oxide powder made therefrom, method for preparing the same, and CMP slurry comprising the same 有权
标题翻译：碳酸铈粉末，其制备方法，由其制成的氧化铈粉末，其制备方法以及包含其的CMP浆料
公开(公告)号：US20100133466A1
公开(公告)日：2010-06-03
申请号：US12591227
申请日：2009-11-12
申请人： Myoung Hwan Oh , Jun Seok Nho , Jong Pil Kim , Jang Yul Kim , Seung Beom Cho
发明人： Myoung Hwan Oh , Jun Seok Nho , Jong Pil Kim , Jang Yul Kim , Seung Beom Cho
IPC分类号： C01F17/00 , C09K13/00 , C01B31/24
CPC分类号： C01F17/0043 , C01F17/005 , C01P2002/72 , C01P2004/03 , C01P2004/61 , C01P2004/62 , C01P2006/80
摘要： Disclosed is a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a carbonate precursor solution to cause precipitation, wherein at least one solvent used in the cerium precursor solution and the carbonate precursor solution is an organic solvent. Cerium carbonate powder obtained from the method, cerium oxide powder obtained from the cerium carbonate powder, a method for preparing the cerium oxide powder, and CMP slurry comprising the cerium oxide powder are also disclosed. The method for preparing cerium carbonate using an organic solvent, allows the resultant cerium carbonate powder to have a size and shape controllable from the initial nucleation step. Additionally, it is possible to easily control the size and shape of cerium oxide powder obtained from the cerium carbonate powder.
摘要翻译：公开了一种通过将铈前体溶液与碳酸酯前体溶液混合以制备沉淀来制备碳酸铈粉末的方法，其中用于铈前体溶液和碳酸酯前体溶液中的至少一种溶剂是有机溶剂。还公开了从该方法得到的碳酸铈粉末，由碳酸铈粉末得到的氧化铈粉末，氧化铈粉末的制备方法和含有氧化铈粉末的CMP浆料。使用有机溶剂制备碳酸铈的方法允许所得的碳酸铈粉末具有从初始成核步骤可控的尺寸和形状。此外，可以容易地控制由碳酸铈粉末获得的氧化铈粉末的尺寸和形状。

7. 发明授权

US07682584B2 Cerium carbonate powder, cerium oxide powder, method for preparing the same, and CMP slurry comprising the same 有权
标题翻译：碳酸铈粉末，氧化铈粉末，其制备方法和包含该碳酸钙的CMP浆料
公开(公告)号：US07682584B2
公开(公告)日：2010-03-23
申请号：US11598100
申请日：2006-11-13
申请人： Myoung Hwan Oh , Jun Seok Nho , Jong Pil Kim , Jang Yul Kim , Seung Beom Cho
发明人： Myoung Hwan Oh , Jun Seok Nho , Jong Pil Kim , Jang Yul Kim , Seung Beom Cho
IPC分类号： C01F17/00
CPC分类号： C01F17/005 , B82Y30/00 , C01F17/0043 , C01P2002/60 , C01P2002/76 , C01P2004/03 , C01P2004/54 , C01P2004/62 , C01P2004/64 , C09K3/1409 , C09K3/1463
摘要： Method of preparing cerium carbonate powder by mixing a cerium precursor solution with a carbonate precursor solution and subjecting the mixture solution to a precipitation reaction, wherein the concentration of cerium in the cerium precursor solution ranges from 1M to 10M, the molar concentration ratio of the cerium precursor to the carbonate precursor ranges from 1:1 to 1:7, and the cerium precursor solution contains at least one additive selected from the group consisting of carbonate compounds, acrylic compounds, and sulfate ion-containing compounds. The cerium carbonate powder has an orthorhombic crystal structure, a particle size of 0.05 to 1 μm, and an aspect ratio of 1 to 5. Moreover, disclosed are cerium oxide powder prepared from said cerium carbonate powder as a precursor, a preparation method thereof, and a CMP slurry containing said cerium oxide powder as an abrasive.
摘要翻译：通过将铈前体溶液与碳酸盐前体溶液混合并使混合溶液进行沉淀反应制备碳酸铈粉末的方法，其中铈前体溶液中铈的浓度范围为1M至10M，铈的摩尔浓度比碳酸酯前体的前体的范围为1:1至1:7，并且铈前体溶液含有至少一种选自碳酸酯化合物，丙烯酸化合物和含硫酸根离子的化合物的添加剂。碳酸铈粉末具有正交晶体结构，粒径为0.05〜1μm，长径比为1〜5。此外，作为前体的碳酸铈粉末制备的氧化铈粉末，其制备方法，和含有所述氧化铈粉末作为研磨剂的CMP浆料。

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