会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • STORING DATA IN DUMMY PIXELS IN AN IMAGE SENSOR
    • 在图像传感器中存储数字图像
    • US20110315853A1
    • 2011-12-29
    • US13159540
    • 2011-06-14
    • Kwang Jun CHOTae Woo KIM
    • Kwang Jun CHOTae Woo KIM
    • H01L27/146
    • H01L27/14605H01L27/14643H04N5/3696H04N5/3745
    • An image sensor includes a dummy pixel array with at least one dummy pixel, a pixel array with a plurality of main pixels, and a data processing unit configured to process a signal provided from the main pixels. The dummy pixel includes: a first switch having a first terminal receiving a first voltage and a second terminal coupled to a floating node; a second switch having a first terminal receiving a second voltage; a third switch coupled between a second terminal of the second switch and the floating node; and a driving element configured to drive a first terminal thereof according to a voltage level applied to the floating node.
    • 图像传感器包括具有至少一个虚拟像素的虚拟像素阵列,具有多个主像素的像素阵列以及被配置为处理从主像素提供的信号的数据处理单元。 伪像素包括:第一开关,具有接收第一电压的第一端子和耦合到浮动节点的第二端子; 第二开关,具有接收第二电压的第一端子; 耦合在所述第二开关的第二端子和所述浮动节点之间的第三开关; 以及驱动元件,其被配置为根据施加到所述浮动节点的电压电平来驱动其第一端子。
    • 5. 发明申请
    • SEMICONDUCTOR DEVICE HAVING A NONSALICIDE REGION AND METHOD OF FABRICATING THE SAME
    • 具有非杀菌剂区域的半导体器件及其制造方法
    • US20080017935A1
    • 2008-01-24
    • US11776713
    • 2007-07-12
    • Tae Woo KIM
    • Tae Woo KIM
    • H01L29/94H01L21/311
    • H01L21/823418H01L21/823443
    • A method of forming a nonsalicide region in a semiconductor device includes depositing silicon oxide and photoresist on a semiconductor substrate to form a salicide prevention layer and a photoresist layer, respectively, patterning the photoresist layer using a photolithography process to partition the salicide prevention layer into a nonsalicide region and a silicide region, reacting a nitrogen gas of a plasma state to the nonsalicide region, depositing metal on the substrate having the nonsalicide region to form a metal layer, removing the metal layer on the nonsalicide region using etchant. The nonsalicide region is formed with a nitric oxide layer when reacting a nitrogen gas of a plasma state, thereby preventing the formation of undercuts during wet etch process.
    • 在半导体器件中形成非硅化物区域的方法包括在半导体衬底上沉积氧化硅和光致抗蚀剂以分别形成防硅化物层和光致抗蚀剂层,使用光刻工艺对光致抗蚀剂层进行图案化以将防自杀剂层分成 非杀钝剂区域和硅化物区域,使等离子体状态的氮气与非剥离剂区域反应,在具有非杀皮剂区域的衬底上沉积金属以形成金属层,使用蚀刻剂除去非杀硅剂区域上的金属层。 当等离子体状态的氮气反应时,非杀钝剂区域形成有一氧化氮层,从而防止在湿蚀刻工艺期间形成底切部分。