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    • 4. 发明申请
    • Copper compound and method for producing copper thin film using the same
    • 铜化合物及其制造方法
    • US20050003086A1
    • 2005-01-06
    • US10881276
    • 2004-06-30
    • Minoru OtaniJun HisadaToyoki Mawatari
    • Minoru OtaniJun HisadaToyoki Mawatari
    • C07F1/08C07F1/00C23C18/08H05K3/40C23C16/00
    • C23C18/08
    • The present invention provides a copper compound having a decomposition temperature in a range of 100° C. to 300° C. and including one unit or a plurality of connected units represented by the following Formula (1): [R1COO]n[NH3]mCuX1p   (1) where n is 1 to 3; m is 1 to 3; p is 0 to 1; n pieces of R1 respectively represent the following Formula (2), CH2X2, CH2X2(CHX2)q, NH2, or H, and may be the same or different from each other, or n is 2 and two pieces of [R1COO] represent together the following Formula (3); R2, R3, and R4 are respectively CH2X2, CH2X2(CHX2)q, NH2, or H; R5 is —(CHX2)r—; X2 is H, OH, or NH2; r is 0 to 4; q is 1 to 4; and X1 is NH4+, H2O, or solvent molecules According to the above configuration, there are provided a copper compound capable of forming a copper thin film required for producing an electronic device or the like safely, inexpensively, and easily, and a method for producing a copper thin film using the copper compound.
    • 本发明提供一种分解温度在100℃至300℃的铜化合物,并且包括由下式(1)表示的一个单元或多个连接单元:[R 1 COO] n [NH 3] mCuX 1 p(1)其中n为1至3; m为1〜3; p为0〜1; n个R 1分别表示下式(2),CH 2 X 2,CH 2 X 2(CHX 2)q,NH 2或H,并且可以彼此相同或不同,或 n为2,两个[R 1 COO]一起表示下式(3)。 R 2,R 3和R 4分别为CH 2 X 2,CH 2 X 2(CHX 2)q,NH 2或H; R 5为 - (CHX 2)r - ; X 2是H,OH或NH 2; r为0〜4; q为1〜4; X 1是NH 4 +,H 2 O或溶剂分子根据上述结构,提供了能够安全,廉价且容易地形成电子器件等制造所需的铜薄膜的铜化合物, 使用铜化合物的铜薄膜的制造方法。