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1. 发明授权

US5029216A Visual aid for the hearing impaired 失效
标题翻译：听障人士视力辅助
公开(公告)号：US5029216A
公开(公告)日：1991-07-02
申请号：US363807
申请日：1989-06-09
申请人： Murzban D. Jhabvala , Hung C. Lin
发明人： Murzban D. Jhabvala , Hung C. Lin
IPC分类号： G02C11/06 , G09B21/00 , H04R25/00
CPC分类号： H04R25/552 , G02C11/06 , G09B21/009 , H04R25/407
摘要： A multi-channel electronic visual aid device which is able to signal to the user whether sound is coming from the left or right, front or back, or both. For the plurality of channels, which may operate in pairs, the sound is picked up by a respective microphone and amplified and rectified into a DC voltage. The DC voltage is next fed to an analog to digital converter and then to a digital encoder. The binary code from the encoder is coupled into a logic circuit where the binary code is decoded to provide a plurality of output levels which are used to drive an indicator which, in turn, provides a visual indication of the sound level received. The binary codes for each pair of channels are also fed into a digital comparator. The output of the comparator is used to enable the logic circuits of the two channels such that if, for example, the signal coming from the right is louder than that coming from the left, the output of the logic unit of the right channel will be enabled and the corresponding indicator activated, indicating the sound source on the right. An indication of the loudness is also provided. One embodiment of the invention may be carried by the hearing impaired or deaf, as a system, for example, which is embedded into eye glasses or a cap. Another embodiment of the invention may be integrated with a vehicle to give a hearing impaired or deaf driver a warning, with a directional indication, that an emergency vehicle is in the vicinity. In this second embodiment, the emergency vehicle transmits an RF signal which would be used as an enabling signal for the visual aid device to avoid false alarms from traffic and other sound sources in the vicinity of the dirver's vehicle.
摘要翻译：一种多通道电子视觉辅助装置，其能够向用户发出声音是从左还是右，前，后或二者发出。对于可以成对操作的多个通道，声音由相应的麦克风拾取并被放大并整流为直流电压。然后将直流电压馈送到模数转换器，然后馈送到数字编码器。来自编码器的二进制码被耦合到逻辑电路中，其中二进制码被解码以提供多个输出电平，这些输出电平用于驱动指示符，这又指示了所接收的声级的视觉指示。每对通道的二进制码也被馈送到数字比较器。比较器的输出用于使能两个通道的逻辑电路，使得如果例如来自右侧的信号比来自左侧的信号更大，则右声道的逻辑单元的输出将为启用，相应的指示灯激活，指示右侧的声源。还提供了响度的指示。本发明的一个实施例可以由听力受损或耳聋携带，例如作为嵌入眼镜或帽中的系统。本发明的另一个实施例可以与车辆集成，以给予听力受损或聋哑驾驶员带有方向指示的紧急车辆在附近的警告。在该第二实施例中，紧急车辆发送将被用作视觉辅助装置的使能信号的RF信号，以避免来自车辆附近的交通和其他声源的错误警报。

2. 发明授权

US4119996A Complementary DMOS-VMOS integrated circuit structure 失效
标题翻译：互补的DMOS-VMOS集成电路结构
公开(公告)号：US4119996A
公开(公告)日：1978-10-10
申请号：US817413
申请日：1977-07-20
申请人： Murzban D. Jhabvala
发明人： Murzban D. Jhabvala
IPC分类号： H01L21/336 , H01L21/8238 , H01L27/092 , H01L29/08 , H01L29/78
CPC分类号： H01L29/7816 , H01L21/823885 , H01L27/0922 , H01L29/66674 , H01L29/7801 , H01L29/0847 , H01L29/0886
摘要： A high speed CMOS formed on a single semiconductor substrate includes a DMOS having an asymmetric channel and a VMOS with a relatively short channel length. The short channel length of the VMOS is achieved by: (1) forming a double diffusion along one edge of a V groove, or (2) ion implanting boron into the apex of the V groove and diffusing a single layer to a relatively deep depth along both edges of the groove.
摘要翻译：形成在单个半导体衬底上的高速CMOS包括具有非对称沟道的DMOS和具有相对短的沟道长度的VMOS。 VMOS的短通道长度通过以下方式实现：（1）沿着V槽的一个边缘形成双重扩散，或者（2）将V离子注入到V槽的顶点中并将单层扩散到相对较深的深度沿着凹槽的两个边缘。

3. 发明授权

US4272302A Method of making V-MOS field effect transistors utilizing a two-step anisotropic etching and ion implantation 失效
标题翻译：使用两步各向异性蚀刻和离子注入制造V-MOS场效应晶体管的方法
公开(公告)号：US4272302A
公开(公告)日：1981-06-09
申请号：US072727
申请日：1979-09-05
申请人： Murzban D. Jhabvala
发明人： Murzban D. Jhabvala
IPC分类号： H01L21/306 , H01L21/336 , H01L29/08 , H01L29/423 , H01L21/265
CPC分类号： H01L29/0847 , H01L21/30608 , H01L29/66621 , H01L29/78
摘要： A method of making V-MOS field effect transistors is disclosed wherein a masking layer is first formed over a surface of a crystalline substrate. An aperture is then formed in the masking layer to expose the surface of the substrate. An anisotropic etchant is applied to the exposed surface so that a groove having a decreasing width within increasing depth is formed. However, the etch is not allowed to go to completion with the result that a partially formed V-shaped groove is formed. Ions are accelerated through the aperture for implantation in the crystalline substrate in the lower portion of the partially formed V-shaped groove. Thereafter, an anisotropic etchant is reapplied to the partially formed V-shaped groove, and the etch is allowed to go to completion.
摘要翻译：公开了一种制造V-MOS场效应晶体管的方法，其中首先在晶体衬底的表面上形成掩模层。然后在掩模层中形成孔，以露出衬底的表面。将各向异性蚀刻剂施加到暴露表面，使得形成具有增加深度的宽度减小的凹槽。然而，不允许蚀刻完成，结果形成部分形成的V形槽。离子通过用于植入部分形成的V形槽的下部中的结晶衬底的孔径被加速。此后，将各向异性蚀刻剂重新应用于部分形成的V形凹槽，并允许蚀刻完成。

4. 发明授权

US4709252A Integrated photo-responsive metal oxide semiconductor circuit 失效
标题翻译：集成的光响应金属氧化物半导体电路
公开(公告)号：US4709252A
公开(公告)日：1987-11-24
申请号：US399074
申请日：1982-07-16
申请人： Murzban D. Jhabvala , David R. Dargo , John C. Lyons
发明人： Murzban D. Jhabvala , David R. Dargo , John C. Lyons
IPC分类号： H01L27/14 , H01L27/146 , H01L31/10 , H01L29/161 , H01L29/78
CPC分类号： H01L27/14669
摘要： An infrared photo-responsive element (R.sub.D) is monolithically integrated into a source follower circuit of a metal oxide semiconductor device (10) by depositing a layer of a lead chalcogenide as a photo-resistive element forming an ohmic bridge between two metallization strips (26, 28) serving as electrodes of the circuit. Voltage from the circuit varies in response to illumination of the layer by infrared radiation.
摘要翻译：红外光响应元件（RD）通过在两个金属化条（26）之间沉积形成欧姆桥的光电阻元件的铅层硫族化物层，将金属氧化物半导体器件（10）的源极跟随器电路单片集成，28）用作电路的电极。来自电路的电压根据红外辐射对层的照射而变化。

5. 发明授权

US4308868A Implantable electrical device 失效
标题翻译：可植入电气设备
公开(公告)号：US4308868A
公开(公告)日：1982-01-05
申请号：US153246
申请日：1980-05-27
申请人： Murzban D. Jhabvala
发明人： Murzban D. Jhabvala
IPC分类号： A61N1/32 , A61N1/372
CPC分类号： A61N1/372 , A61N1/326
摘要： A fully implantable and self-contained device is disclosed composed of a flexible electrode array 10 for surrounding damaged nerves and a signal generator 12 for driving the electrode array with periodic electrical impulses of nanoampere magnitude to induce regeneration of the damaged nerves.
摘要翻译：公开了一种完全可植入和独立的装置，其由用于包围受损神经的柔性电极阵列10和用于驱动具有纳秒级的周期性电脉冲驱动电极阵列的信号发生器12以引起受损神经的再生。

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